GB2054955B - Menolithic integrated cmos circuit - Google Patents

Menolithic integrated cmos circuit

Info

Publication number
GB2054955B
GB2054955B GB8020110A GB8020110A GB2054955B GB 2054955 B GB2054955 B GB 2054955B GB 8020110 A GB8020110 A GB 8020110A GB 8020110 A GB8020110 A GB 8020110A GB 2054955 B GB2054955 B GB 2054955B
Authority
GB
United Kingdom
Prior art keywords
menolithic
cmos circuit
integrated cmos
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8020110A
Other languages
English (en)
Other versions
GB2054955A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of GB2054955A publication Critical patent/GB2054955A/en
Application granted granted Critical
Publication of GB2054955B publication Critical patent/GB2054955B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB8020110A 1979-07-24 1980-06-19 Menolithic integrated cmos circuit Expired GB2054955B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2929869A DE2929869C2 (de) 1979-07-24 1979-07-24 Monolithisch integrierte CMOS-Inverterschaltungsanordnung

Publications (2)

Publication Number Publication Date
GB2054955A GB2054955A (en) 1981-02-18
GB2054955B true GB2054955B (en) 1983-05-11

Family

ID=6076567

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8020110A Expired GB2054955B (en) 1979-07-24 1980-06-19 Menolithic integrated cmos circuit

Country Status (6)

Country Link
JP (1) JPS5618459A (fr)
DE (1) DE2929869C2 (fr)
FR (1) FR2462025A1 (fr)
GB (1) GB2054955B (fr)
IE (1) IE50350B1 (fr)
IT (1) IT1193544B (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177554A (en) * 1981-04-27 1982-11-01 Hitachi Ltd Semiconductor integrated circuit device
EP0166386A3 (fr) * 1984-06-29 1987-08-05 Siemens Aktiengesellschaft Circuit intégré selon la technologie à circuits complémentaires
DE3685169D1 (de) * 1985-08-26 1992-06-11 Siemens Ag Integrierte schaltung in komplementaerer schaltungstechnik mit einem substratvorspannungs-generator und einer schottky-diode.
US11342916B2 (en) 2008-12-23 2022-05-24 Schottky Lsi, Inc. Schottky-CMOS asynchronous logic cells
US8476689B2 (en) 2008-12-23 2013-07-02 Augustine Wei-Chun Chang Super CMOS devices on a microelectronics system
US9853643B2 (en) 2008-12-23 2017-12-26 Schottky Lsi, Inc. Schottky-CMOS asynchronous logic cells
WO2016057973A1 (fr) * 2014-10-10 2016-04-14 Schottky Lsi, Inc. Dispositifs super cmos (scmostm) sur un système microélectronique
US11955476B2 (en) 2008-12-23 2024-04-09 Schottky Lsi, Inc. Super CMOS devices on a microelectronics system

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS568501B2 (fr) * 1973-05-12 1981-02-24
JPS5211880A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS5211885A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS6043666B2 (ja) * 1976-10-18 1985-09-30 株式会社日立製作所 相補形ｍｉｓ半導体装置
JPS53105985A (en) * 1977-02-28 1978-09-14 Nec Corp Conmplementary-type insulating gate field effect transistor

Also Published As

Publication number Publication date
DE2929869A1 (de) 1981-02-19
IT8023632A1 (it) 1982-01-23
JPS5618459A (en) 1981-02-21
FR2462025B1 (fr) 1983-11-18
IE801530L (en) 1981-01-24
IE50350B1 (en) 1986-04-02
IT8023632A0 (it) 1980-07-23
GB2054955A (en) 1981-02-18
FR2462025A1 (fr) 1981-02-06
IT1193544B (it) 1988-07-08
DE2929869C2 (de) 1986-04-30

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Legal Events

Date Code Title Description
727 Application made for amendment of specification (sect. 27/1977)
727A Application for amendment of specification now open to opposition (sect. 27/1977)
727B Case decided by the comptroller ** specification amended (sect. 27/1977)
SP Amendment (slips) printed
PCNP Patent ceased through non-payment of renewal fee