JPS5618459A - Monolithic integrated ccmos circuit - Google Patents
Monolithic integrated ccmos circuitInfo
- Publication number
- JPS5618459A JPS5618459A JP9860980A JP9860980A JPS5618459A JP S5618459 A JPS5618459 A JP S5618459A JP 9860980 A JP9860980 A JP 9860980A JP 9860980 A JP9860980 A JP 9860980A JP S5618459 A JPS5618459 A JP S5618459A
- Authority
- JP
- Japan
- Prior art keywords
- ccmos
- circuit
- monolithic integrated
- monolithic
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2929869A DE2929869C2 (de) | 1979-07-24 | 1979-07-24 | Monolithisch integrierte CMOS-Inverterschaltungsanordnung |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5618459A true JPS5618459A (en) | 1981-02-21 |
Family
ID=6076567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9860980A Pending JPS5618459A (en) | 1979-07-24 | 1980-07-18 | Monolithic integrated ccmos circuit |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5618459A (ja) |
DE (1) | DE2929869C2 (ja) |
FR (1) | FR2462025A1 (ja) |
GB (1) | GB2054955B (ja) |
IE (1) | IE50350B1 (ja) |
IT (1) | IT1193544B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57177554A (en) * | 1981-04-27 | 1982-11-01 | Hitachi Ltd | Semiconductor integrated circuit device |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0166386A3 (de) * | 1984-06-29 | 1987-08-05 | Siemens Aktiengesellschaft | Integrierte Schaltung in komplementärer Schaltungstechnik |
DE3685169D1 (de) * | 1985-08-26 | 1992-06-11 | Siemens Ag | Integrierte schaltung in komplementaerer schaltungstechnik mit einem substratvorspannungs-generator und einer schottky-diode. |
US11342916B2 (en) | 2008-12-23 | 2022-05-24 | Schottky Lsi, Inc. | Schottky-CMOS asynchronous logic cells |
US8476689B2 (en) | 2008-12-23 | 2013-07-02 | Augustine Wei-Chun Chang | Super CMOS devices on a microelectronics system |
US9853643B2 (en) | 2008-12-23 | 2017-12-26 | Schottky Lsi, Inc. | Schottky-CMOS asynchronous logic cells |
WO2016057973A1 (en) * | 2014-10-10 | 2016-04-14 | Schottky Lsi, Inc. | Super cmos (scmostm) devices on a microelectronic system |
US11955476B2 (en) | 2008-12-23 | 2024-04-09 | Schottky Lsi, Inc. | Super CMOS devices on a microelectronics system |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5211880A (en) * | 1975-07-18 | 1977-01-29 | Toshiba Corp | Semiconductor integrated circuit device |
JPS5211885A (en) * | 1975-07-18 | 1977-01-29 | Toshiba Corp | Semiconductor integrated circuit device |
JPS5349965A (en) * | 1976-10-18 | 1978-05-06 | Hitachi Ltd | Complementary mis semiconductor device |
JPS53105985A (en) * | 1977-02-28 | 1978-09-14 | Nec Corp | Conmplementary-type insulating gate field effect transistor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3673428A (en) * | 1970-09-18 | 1972-06-27 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
JPS568501B2 (ja) * | 1973-05-12 | 1981-02-24 |
-
1979
- 1979-07-24 DE DE2929869A patent/DE2929869C2/de not_active Expired
-
1980
- 1980-06-19 GB GB8020110A patent/GB2054955B/en not_active Expired
- 1980-07-18 JP JP9860980A patent/JPS5618459A/ja active Pending
- 1980-07-23 FR FR8016206A patent/FR2462025A1/fr active Granted
- 1980-07-23 IE IE1530/80A patent/IE50350B1/en unknown
- 1980-07-23 IT IT23632/80A patent/IT1193544B/it active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5211880A (en) * | 1975-07-18 | 1977-01-29 | Toshiba Corp | Semiconductor integrated circuit device |
JPS5211885A (en) * | 1975-07-18 | 1977-01-29 | Toshiba Corp | Semiconductor integrated circuit device |
JPS5349965A (en) * | 1976-10-18 | 1978-05-06 | Hitachi Ltd | Complementary mis semiconductor device |
JPS53105985A (en) * | 1977-02-28 | 1978-09-14 | Nec Corp | Conmplementary-type insulating gate field effect transistor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57177554A (en) * | 1981-04-27 | 1982-11-01 | Hitachi Ltd | Semiconductor integrated circuit device |
Also Published As
Publication number | Publication date |
---|---|
GB2054955B (en) | 1983-05-11 |
DE2929869A1 (de) | 1981-02-19 |
IT8023632A1 (it) | 1982-01-23 |
FR2462025B1 (ja) | 1983-11-18 |
IE801530L (en) | 1981-01-24 |
IE50350B1 (en) | 1986-04-02 |
IT8023632A0 (it) | 1980-07-23 |
GB2054955A (en) | 1981-02-18 |
FR2462025A1 (fr) | 1981-02-06 |
IT1193544B (it) | 1988-07-08 |
DE2929869C2 (de) | 1986-04-30 |
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