JPS5618459A - Monolithic integrated ccmos circuit - Google Patents

Monolithic integrated ccmos circuit

Info

Publication number
JPS5618459A
JPS5618459A JP9860980A JP9860980A JPS5618459A JP S5618459 A JPS5618459 A JP S5618459A JP 9860980 A JP9860980 A JP 9860980A JP 9860980 A JP9860980 A JP 9860980A JP S5618459 A JPS5618459 A JP S5618459A
Authority
JP
Japan
Prior art keywords
ccmos
circuit
monolithic integrated
monolithic
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9860980A
Other languages
English (en)
Inventor
Giyuntaa Adamu Furitsutsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of JPS5618459A publication Critical patent/JPS5618459A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP9860980A 1979-07-24 1980-07-18 Monolithic integrated ccmos circuit Pending JPS5618459A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2929869A DE2929869C2 (de) 1979-07-24 1979-07-24 Monolithisch integrierte CMOS-Inverterschaltungsanordnung

Publications (1)

Publication Number Publication Date
JPS5618459A true JPS5618459A (en) 1981-02-21

Family

ID=6076567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9860980A Pending JPS5618459A (en) 1979-07-24 1980-07-18 Monolithic integrated ccmos circuit

Country Status (6)

Country Link
JP (1) JPS5618459A (ja)
DE (1) DE2929869C2 (ja)
FR (1) FR2462025A1 (ja)
GB (1) GB2054955B (ja)
IE (1) IE50350B1 (ja)
IT (1) IT1193544B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177554A (en) * 1981-04-27 1982-11-01 Hitachi Ltd Semiconductor integrated circuit device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0166386A3 (de) * 1984-06-29 1987-08-05 Siemens Aktiengesellschaft Integrierte Schaltung in komplementärer Schaltungstechnik
DE3685169D1 (de) * 1985-08-26 1992-06-11 Siemens Ag Integrierte schaltung in komplementaerer schaltungstechnik mit einem substratvorspannungs-generator und einer schottky-diode.
US11342916B2 (en) 2008-12-23 2022-05-24 Schottky Lsi, Inc. Schottky-CMOS asynchronous logic cells
US8476689B2 (en) 2008-12-23 2013-07-02 Augustine Wei-Chun Chang Super CMOS devices on a microelectronics system
US9853643B2 (en) 2008-12-23 2017-12-26 Schottky Lsi, Inc. Schottky-CMOS asynchronous logic cells
WO2016057973A1 (en) * 2014-10-10 2016-04-14 Schottky Lsi, Inc. Super cmos (scmostm) devices on a microelectronic system
US11955476B2 (en) 2008-12-23 2024-04-09 Schottky Lsi, Inc. Super CMOS devices on a microelectronics system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211880A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS5211885A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS5349965A (en) * 1976-10-18 1978-05-06 Hitachi Ltd Complementary mis semiconductor device
JPS53105985A (en) * 1977-02-28 1978-09-14 Nec Corp Conmplementary-type insulating gate field effect transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS568501B2 (ja) * 1973-05-12 1981-02-24

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211880A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS5211885A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS5349965A (en) * 1976-10-18 1978-05-06 Hitachi Ltd Complementary mis semiconductor device
JPS53105985A (en) * 1977-02-28 1978-09-14 Nec Corp Conmplementary-type insulating gate field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177554A (en) * 1981-04-27 1982-11-01 Hitachi Ltd Semiconductor integrated circuit device

Also Published As

Publication number Publication date
GB2054955B (en) 1983-05-11
DE2929869A1 (de) 1981-02-19
IT8023632A1 (it) 1982-01-23
FR2462025B1 (ja) 1983-11-18
IE801530L (en) 1981-01-24
IE50350B1 (en) 1986-04-02
IT8023632A0 (it) 1980-07-23
GB2054955A (en) 1981-02-18
FR2462025A1 (fr) 1981-02-06
IT1193544B (it) 1988-07-08
DE2929869C2 (de) 1986-04-30

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