HK881A - Method for the low pressure pyrolytic deposition of silicon nitride - Google Patents

Method for the low pressure pyrolytic deposition of silicon nitride

Info

Publication number
HK881A
HK881A HK881A HK881A HK881A HK 881 A HK881 A HK 881A HK 881 A HK881 A HK 881A HK 881 A HK881 A HK 881A HK 881 A HK881 A HK 881A
Authority
HK
Hong Kong
Prior art keywords
silicon nitride
low pressure
pyrolytic deposition
pressure pyrolytic
deposition
Prior art date
Application number
HK881A
Inventor
J B Price
J C Goldman
L D Mcmillan
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of HK881A publication Critical patent/HK881A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
HK881A 1975-11-25 1981-01-15 Method for the low pressure pyrolytic deposition of silicon nitride HK881A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US63501275A 1975-11-25 1975-11-25

Publications (1)

Publication Number Publication Date
HK881A true HK881A (en) 1981-01-23

Family

ID=24546063

Family Applications (1)

Application Number Title Priority Date Filing Date
HK881A HK881A (en) 1975-11-25 1981-01-15 Method for the low pressure pyrolytic deposition of silicon nitride

Country Status (5)

Country Link
JP (1) JPS6010108B2 (en)
DE (1) DE2652449C2 (en)
FR (1) FR2332802A1 (en)
GB (1) GB1518564A (en)
HK (1) HK881A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3118848C2 (en) * 1980-05-12 1983-05-19 Mitsubishi Denki K.K., Tokyo Low pressure coating device
GB2213836B (en) * 1987-12-18 1992-08-26 Gen Electric Co Plc Vacuum deposition process
JPH0248706U (en) * 1988-09-27 1990-04-04
FR2759362B1 (en) * 1997-02-10 1999-03-12 Saint Gobain Vitrage TRANSPARENT SUBSTRATE EQUIPPED WITH AT LEAST ONE THIN LAYER BASED ON SILICON NITRIDE OR OXYNITRIDE AND ITS PROCESS FOR OBTAINING IT
JP2004071970A (en) * 2002-08-08 2004-03-04 Shin Etsu Chem Co Ltd Manufacturing method and manufacturing system of silicon substrate for solar cell
CN115142048B (en) * 2022-06-30 2023-07-07 北海惠科半导体科技有限公司 Wafer carrier and preparation method of silicon nitride dielectric film

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1251287C2 (en) * 1962-09-10 1975-10-09 United Aircraft Corporation, East Hartford, Conn. (V.St.A.) PROCESS FOR THE PRODUCTION OF NON-POROUS SILICON NITRIDE
FR1521174A (en) * 1966-05-02 1968-04-12 Siemens Ag Process for producing a protective layer, in particular on the surface of a semiconductor crystal
US3549411A (en) * 1967-06-27 1970-12-22 Texas Instruments Inc Method of preparing silicon nitride films
US3652324A (en) * 1968-08-15 1972-03-28 Westinghouse Electric Corp A METHOD OF VAPOR DEPOSITING A LAYER OF Si{11 N{11 {0 ON A SILICON BASE
US3856587A (en) * 1971-03-26 1974-12-24 Co Yamazaki Kogyo Kk Method of fabricating semiconductor memory device gate
US3900597A (en) * 1973-12-19 1975-08-19 Motorola Inc System and process for deposition of polycrystalline silicon with silane in vacuum

Also Published As

Publication number Publication date
JPS5265199A (en) 1977-05-30
JPS6010108B2 (en) 1985-03-15
DE2652449A1 (en) 1977-05-26
GB1518564A (en) 1978-07-19
FR2332802B1 (en) 1981-12-24
FR2332802A1 (en) 1977-06-24
DE2652449C2 (en) 1982-06-09

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