JPS57152132A - Chemical vapor growing method - Google Patents

Chemical vapor growing method

Info

Publication number
JPS57152132A
JPS57152132A JP3638281A JP3638281A JPS57152132A JP S57152132 A JPS57152132 A JP S57152132A JP 3638281 A JP3638281 A JP 3638281A JP 3638281 A JP3638281 A JP 3638281A JP S57152132 A JPS57152132 A JP S57152132A
Authority
JP
Japan
Prior art keywords
treated
plasma
substrates
films
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3638281A
Other languages
Japanese (ja)
Other versions
JPS6313343B2 (en
Inventor
Yoshimi Shiotani
Kanetake Takasaki
Mamoru Maeda
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3638281A priority Critical patent/JPS57152132A/en
Publication of JPS57152132A publication Critical patent/JPS57152132A/en
Publication of JPS6313343B2 publication Critical patent/JPS6313343B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Abstract

PURPOSE:To obtain a method to form a silicon nitride compound having extremely small quantities of contents of hydrogen atoms by plasma chemical vapor growth by a method wherein growth gas containing silicon halogenide and nitide or nitrogen is used. CONSTITUTION:The silicon nitride film is coated on a substrate to be treated by making gas mentioned above to perform chemical reaction in plasma. For this purpose, the substrates 10 to be treated are put on substrate holding bases 8 in a plasma CVD device, for example, and argon (Ar) purge gas ia made to flow-in from a growth gas introducing tube 2, then the prescribed growth gas is introduced in and plasma is made to be generated between the substrates 10 to be treated and a confronting electrode 9, and SixNy films are made to grow on the substrates 10 to be treated. The silicon nitride compound films thereof have superior damp-proof property, and because the films thereof contain no hydrogen atom H, parasitic electric charge is not generated, and the characteristic of the elements is stabilized.
JP3638281A 1981-03-13 1981-03-13 Chemical vapor growing method Granted JPS57152132A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3638281A JPS57152132A (en) 1981-03-13 1981-03-13 Chemical vapor growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3638281A JPS57152132A (en) 1981-03-13 1981-03-13 Chemical vapor growing method

Publications (2)

Publication Number Publication Date
JPS57152132A true JPS57152132A (en) 1982-09-20
JPS6313343B2 JPS6313343B2 (en) 1988-03-25

Family

ID=12468291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3638281A Granted JPS57152132A (en) 1981-03-13 1981-03-13 Chemical vapor growing method

Country Status (1)

Country Link
JP (1) JPS57152132A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279448A (en) * 1975-12-25 1977-07-04 Toyota Motor Corp Fixing device for tiltable handwheel
JPS5996736A (en) * 1982-11-26 1984-06-04 Hitachi Ltd Semiconductor device
JPS61145834A (en) * 1984-12-20 1986-07-03 Toshiba Corp Manufacture of semiconductor device
JPS61256735A (en) * 1985-05-10 1986-11-14 Nec Corp Semiconductor device and manufacture thereof
JPS62166530A (en) * 1986-01-20 1987-07-23 Toshiba Corp Manufacture of semiconductor device
JPS6449234A (en) * 1987-08-20 1989-02-23 Nec Corp Semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SOLID-STATE SCIENCE AND TECHNOLOGY=1977 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279448A (en) * 1975-12-25 1977-07-04 Toyota Motor Corp Fixing device for tiltable handwheel
JPS5526028B2 (en) * 1975-12-25 1980-07-10
JPS5996736A (en) * 1982-11-26 1984-06-04 Hitachi Ltd Semiconductor device
JPS61145834A (en) * 1984-12-20 1986-07-03 Toshiba Corp Manufacture of semiconductor device
JPS61256735A (en) * 1985-05-10 1986-11-14 Nec Corp Semiconductor device and manufacture thereof
JPS62166530A (en) * 1986-01-20 1987-07-23 Toshiba Corp Manufacture of semiconductor device
JPS6449234A (en) * 1987-08-20 1989-02-23 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6313343B2 (en) 1988-03-25

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