CA990626A - Method of depositing elementary semiconductor material - Google Patents

Method of depositing elementary semiconductor material

Info

Publication number
CA990626A
CA990626A CA171,410A CA171410A CA990626A CA 990626 A CA990626 A CA 990626A CA 171410 A CA171410 A CA 171410A CA 990626 A CA990626 A CA 990626A
Authority
CA
Canada
Prior art keywords
semiconductor material
elementary semiconductor
depositing
depositing elementary
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA171,410A
Other versions
CA171410S (en
Inventor
Jan Bloem
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA990626A publication Critical patent/CA990626A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
CA171,410A 1972-05-20 1973-05-15 Method of depositing elementary semiconductor material Expired CA990626A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7206877A NL7206877A (en) 1972-05-20 1972-05-20

Publications (1)

Publication Number Publication Date
CA990626A true CA990626A (en) 1976-06-08

Family

ID=19816097

Family Applications (1)

Application Number Title Priority Date Filing Date
CA171,410A Expired CA990626A (en) 1972-05-20 1973-05-15 Method of depositing elementary semiconductor material

Country Status (7)

Country Link
JP (1) JPS5225295B2 (en)
CA (1) CA990626A (en)
DE (1) DE2324127A1 (en)
FR (1) FR2185445B1 (en)
GB (1) GB1406760A (en)
IT (1) IT985922B (en)
NL (1) NL7206877A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3166609D1 (en) * 1980-07-28 1984-11-15 Monsanto Co Improved method for producing semiconductor grade silicon
JPS6169116A (en) * 1984-09-13 1986-04-09 Toshiba Ceramics Co Ltd Susceptor for continuous cvd coating on silicon wafer
JP3725598B2 (en) * 1996-01-12 2005-12-14 東芝セラミックス株式会社 Epitaxial wafer manufacturing method
JP2006070342A (en) * 2004-09-03 2006-03-16 Sumitomo Electric Ind Ltd Vapor phase film deposition system, susceptor and vapor phase film deposition method
JP6333646B2 (en) 2014-07-08 2018-05-30 ビーエーエスエフ コーティングス ゲゼルシャフト ミット ベシュレンクテル ハフツングＢＡＳＦ Ｃｏａｔｉｎｇｓ ＧｍｂＨ Two-component coating composition and method for forming multilayer coating film using the same

Also Published As

Publication number Publication date
IT985922B (en) 1974-12-30
FR2185445A1 (en) 1974-01-04
JPS5225295B2 (en) 1977-07-06
DE2324127A1 (en) 1973-12-06
FR2185445B1 (en) 1976-06-11
NL7206877A (en) 1973-11-22
JPS4943572A (en) 1974-04-24
GB1406760A (en) 1975-09-17

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