GB0127479D0 - Trench-gate semiconductor devices and the manufacture thereof - Google Patents
Trench-gate semiconductor devices and the manufacture thereofInfo
- Publication number
- GB0127479D0 GB0127479D0 GBGB0127479.4A GB0127479A GB0127479D0 GB 0127479 D0 GB0127479 D0 GB 0127479D0 GB 0127479 A GB0127479 A GB 0127479A GB 0127479 D0 GB0127479 D0 GB 0127479D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- trench
- manufacture
- semiconductor devices
- gate semiconductor
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (18)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0127479.4A GB0127479D0 (en) | 2001-11-16 | 2001-11-16 | Trench-gate semiconductor devices and the manufacture thereof |
GBGB0130019.3A GB0130019D0 (en) | 2001-11-16 | 2001-12-17 | Trench-gate semiconductor devices and the manufacture thereof |
GB0221838A GB0221838D0 (en) | 2001-11-16 | 2002-09-20 | Trench-gate semiconductor devices and the manufacture thereof |
GB0221839A GB0221839D0 (en) | 2001-11-16 | 2002-09-20 | A field effect transistor semiconductor device |
US10/293,993 US6774434B2 (en) | 2001-11-16 | 2002-11-12 | Field effect device having a drift region and field shaping region used as capacitor dielectric |
US10/293,991 US6784488B2 (en) | 2001-11-16 | 2002-11-12 | Trench-gate semiconductor devices and the manufacture thereof |
KR10-2004-7007430A KR20040065560A (ko) | 2001-11-16 | 2002-11-13 | 전계 효과 트랜지스터 디바이스 |
CNB028226194A CN100524809C (zh) | 2001-11-16 | 2002-11-13 | 场效应晶体管半导体器件 |
JP2003544817A JP2005510059A (ja) | 2001-11-16 | 2002-11-13 | 電界効果トランジスタ半導体デバイス |
PCT/IB2002/004759 WO2003043089A1 (en) | 2001-11-16 | 2002-11-13 | A field effect transistor semiconductor device |
AT02781506T ATE456155T1 (de) | 2001-11-16 | 2002-11-13 | Feldeffekttransistor-halbleiterbauelement |
EP02781506A EP1449256B1 (en) | 2001-11-16 | 2002-11-13 | A field effect transistor semiconductor device |
DE60235187T DE60235187D1 (de) | 2001-11-16 | 2002-11-13 | Feldeffekttransistor-Halbleiterbauelement |
JP2003544819A JP2005510061A (ja) | 2001-11-16 | 2002-11-14 | トレンチ・ゲート半導体装置とその製造方法 |
KR10-2004-7007403A KR20040065224A (ko) | 2001-11-16 | 2002-11-14 | 트렌치 게이트 반도체 디바이스 및 이의 제조 방법 |
EP02781526A EP1449257A1 (en) | 2001-11-16 | 2002-11-14 | Trench-gate semiconductor devices and the manufacture thereof |
PCT/IB2002/004786 WO2003043091A1 (en) | 2001-11-16 | 2002-11-14 | Trench-gate semiconductor devices and the manufacture thereof |
CNA028226615A CN1586010A (zh) | 2001-11-16 | 2002-11-14 | 沟槽-栅半导体器件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0127479.4A GB0127479D0 (en) | 2001-11-16 | 2001-11-16 | Trench-gate semiconductor devices and the manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
GB0127479D0 true GB0127479D0 (en) | 2002-01-09 |
Family
ID=9925865
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB0127479.4A Ceased GB0127479D0 (en) | 2001-11-16 | 2001-11-16 | Trench-gate semiconductor devices and the manufacture thereof |
GBGB0130019.3A Ceased GB0130019D0 (en) | 2001-11-16 | 2001-12-17 | Trench-gate semiconductor devices and the manufacture thereof |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB0130019.3A Ceased GB0130019D0 (en) | 2001-11-16 | 2001-12-17 | Trench-gate semiconductor devices and the manufacture thereof |
Country Status (4)
Country | Link |
---|---|
KR (2) | KR20040065560A (ko) |
AT (1) | ATE456155T1 (ko) |
DE (1) | DE60235187D1 (ko) |
GB (2) | GB0127479D0 (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007184553A (ja) * | 2005-12-06 | 2007-07-19 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP5128100B2 (ja) * | 2006-09-29 | 2013-01-23 | 三菱電機株式会社 | 電力用半導体装置 |
US7994573B2 (en) | 2007-12-14 | 2011-08-09 | Fairchild Semiconductor Corporation | Structure and method for forming power devices with carbon-containing region |
KR102053354B1 (ko) * | 2013-07-17 | 2019-12-06 | 삼성전자주식회사 | 매립 채널 어레이를 갖는 반도체 소자 및 그 제조 방법 |
-
2001
- 2001-11-16 GB GBGB0127479.4A patent/GB0127479D0/en not_active Ceased
- 2001-12-17 GB GBGB0130019.3A patent/GB0130019D0/en not_active Ceased
-
2002
- 2002-11-13 AT AT02781506T patent/ATE456155T1/de not_active IP Right Cessation
- 2002-11-13 DE DE60235187T patent/DE60235187D1/de not_active Expired - Lifetime
- 2002-11-13 KR KR10-2004-7007430A patent/KR20040065560A/ko active IP Right Grant
- 2002-11-14 KR KR10-2004-7007403A patent/KR20040065224A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR20040065560A (ko) | 2004-07-22 |
KR20040065224A (ko) | 2004-07-21 |
DE60235187D1 (de) | 2010-03-11 |
ATE456155T1 (de) | 2010-02-15 |
GB0130019D0 (en) | 2002-02-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AT | Applications terminated before publication under section 16(1) |