GB0130019D0 - Trench-gate semiconductor devices and the manufacture thereof - Google Patents

Trench-gate semiconductor devices and the manufacture thereof

Info

Publication number
GB0130019D0
GB0130019D0 GBGB0130019.3A GB0130019A GB0130019D0 GB 0130019 D0 GB0130019 D0 GB 0130019D0 GB 0130019 A GB0130019 A GB 0130019A GB 0130019 D0 GB0130019 D0 GB 0130019D0
Authority
GB
United Kingdom
Prior art keywords
trench
manufacture
semiconductor devices
gate semiconductor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0130019.3A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of GB0130019D0 publication Critical patent/GB0130019D0/en
Priority to GB0221838A priority Critical patent/GB0221838D0/en
Priority to GB0221839A priority patent/GB0221839D0/en
Priority to US10/293,993 priority patent/US6774434B2/en
Priority to US10/293,991 priority patent/US6784488B2/en
Priority to AT02781506T priority patent/ATE456155T1/en
Priority to EP02781506A priority patent/EP1449256B1/en
Priority to KR10-2004-7007430A priority patent/KR20040065560A/en
Priority to JP2003544817A priority patent/JP2005510059A/en
Priority to PCT/IB2002/004759 priority patent/WO2003043089A1/en
Priority to CNB028226194A priority patent/CN100524809C/en
Priority to DE60235187T priority patent/DE60235187D1/en
Priority to PCT/IB2002/004786 priority patent/WO2003043091A1/en
Priority to EP02781526A priority patent/EP1449257A1/en
Priority to KR10-2004-7007403A priority patent/KR20040065224A/en
Priority to CNA028226615A priority patent/CN1586010A/en
Priority to JP2003544819A priority patent/JP2005510061A/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GBGB0130019.3A 2001-11-16 2001-12-17 Trench-gate semiconductor devices and the manufacture thereof Ceased GB0130019D0 (en)

Priority Applications (16)

Application Number Priority Date Filing Date Title
GB0221838A GB0221838D0 (en) 2001-11-16 2002-09-20 Trench-gate semiconductor devices and the manufacture thereof
GB0221839A GB0221839D0 (en) 2001-11-16 2002-09-20 A field effect transistor semiconductor device
US10/293,993 US6774434B2 (en) 2001-11-16 2002-11-12 Field effect device having a drift region and field shaping region used as capacitor dielectric
US10/293,991 US6784488B2 (en) 2001-11-16 2002-11-12 Trench-gate semiconductor devices and the manufacture thereof
DE60235187T DE60235187D1 (en) 2001-11-16 2002-11-13 Field effect transistor semiconductor device
KR10-2004-7007430A KR20040065560A (en) 2001-11-16 2002-11-13 A field effect transistor semiconductor device
EP02781506A EP1449256B1 (en) 2001-11-16 2002-11-13 A field effect transistor semiconductor device
AT02781506T ATE456155T1 (en) 2001-11-16 2002-11-13 FIELD EFFECT TRANSISTOR SEMICONDUCTOR COMPONENT
JP2003544817A JP2005510059A (en) 2001-11-16 2002-11-13 Field effect transistor semiconductor device
PCT/IB2002/004759 WO2003043089A1 (en) 2001-11-16 2002-11-13 A field effect transistor semiconductor device
CNB028226194A CN100524809C (en) 2001-11-16 2002-11-13 A field effect transistor semiconductor device
PCT/IB2002/004786 WO2003043091A1 (en) 2001-11-16 2002-11-14 Trench-gate semiconductor devices and the manufacture thereof
EP02781526A EP1449257A1 (en) 2001-11-16 2002-11-14 Trench-gate semiconductor devices and the manufacture thereof
KR10-2004-7007403A KR20040065224A (en) 2001-11-16 2002-11-14 Trench-gate semiconductor devices and the manufacture thereof
CNA028226615A CN1586010A (en) 2001-11-16 2002-11-14 Trench-gate semiconductor devices and the manufacture thereof
JP2003544819A JP2005510061A (en) 2001-11-16 2002-11-14 Trench gate semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0127479.4A GB0127479D0 (en) 2001-11-16 2001-11-16 Trench-gate semiconductor devices and the manufacture thereof

Publications (1)

Publication Number Publication Date
GB0130019D0 true GB0130019D0 (en) 2002-02-06

Family

ID=9925865

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB0127479.4A Ceased GB0127479D0 (en) 2001-11-16 2001-11-16 Trench-gate semiconductor devices and the manufacture thereof
GBGB0130019.3A Ceased GB0130019D0 (en) 2001-11-16 2001-12-17 Trench-gate semiconductor devices and the manufacture thereof

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB0127479.4A Ceased GB0127479D0 (en) 2001-11-16 2001-11-16 Trench-gate semiconductor devices and the manufacture thereof

Country Status (4)

Country Link
KR (2) KR20040065560A (en)
AT (1) ATE456155T1 (en)
DE (1) DE60235187D1 (en)
GB (2) GB0127479D0 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184553A (en) * 2005-12-06 2007-07-19 Sanyo Electric Co Ltd Semiconductor device and its fabrication process
JP5128100B2 (en) * 2006-09-29 2013-01-23 三菱電機株式会社 Power semiconductor device
US7994573B2 (en) 2007-12-14 2011-08-09 Fairchild Semiconductor Corporation Structure and method for forming power devices with carbon-containing region
KR102053354B1 (en) * 2013-07-17 2019-12-06 삼성전자주식회사 A semiconductor device having a buried channel array and method of manufacturing the same

Also Published As

Publication number Publication date
KR20040065560A (en) 2004-07-22
KR20040065224A (en) 2004-07-21
DE60235187D1 (en) 2010-03-11
ATE456155T1 (en) 2010-02-15
GB0127479D0 (en) 2002-01-09

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)