FR3091027B1 - Dispositif optoélectronique - Google Patents

Dispositif optoélectronique Download PDF

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Publication number
FR3091027B1
FR3091027B1 FR1873944A FR1873944A FR3091027B1 FR 3091027 B1 FR3091027 B1 FR 3091027B1 FR 1873944 A FR1873944 A FR 1873944A FR 1873944 A FR1873944 A FR 1873944A FR 3091027 B1 FR3091027 B1 FR 3091027B1
Authority
FR
France
Prior art keywords
optoelectronic device
stack
light emitting
emitting diodes
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1873944A
Other languages
English (en)
Other versions
FR3091027A1 (fr
Inventor
Frédéric Mayer
Frédéric Mercier
Ivan-Christophe Robin
Xavier Hugon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Original Assignee
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aledia filed Critical Aledia
Priority to FR1873944A priority Critical patent/FR3091027B1/fr
Priority to TW108146378A priority patent/TW202038427A/zh
Priority to EP19848783.7A priority patent/EP3900038A1/fr
Priority to CN201980090655.3A priority patent/CN113383416A/zh
Priority to US17/414,874 priority patent/US11984549B2/en
Priority to KR1020217022446A priority patent/KR20210104825A/ko
Priority to PCT/FR2019/053176 priority patent/WO2020128341A1/fr
Priority to JP2021536250A priority patent/JP2022515786A/ja
Publication of FR3091027A1 publication Critical patent/FR3091027A1/fr
Application granted granted Critical
Publication of FR3091027B1 publication Critical patent/FR3091027B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

Dispositif optoélectronique La présente description concerne un dispositif optoélectronique (100) comprenant un circuit intégré comprenant des diodes électroluminescentes (104), des transistors en couches minces (110), et un empilement (126) de couches isolantes électriquement, ledit empilement (126) étant situé entre les diodes électroluminescentes (104) et les transistors (110, 504), ledit empilement (126) comprenant en outre des éléments conducteurs (128, 132), entre et à travers lesdites couches isolantes, lesdits éléments conducteurs (128, 132) connectant au moins certains des transistors aux diodes électroluminescentes (104). Figure pour l'abrégé : Fig. 1
FR1873944A 2018-12-21 2018-12-21 Dispositif optoélectronique Active FR3091027B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1873944A FR3091027B1 (fr) 2018-12-21 2018-12-21 Dispositif optoélectronique
TW108146378A TW202038427A (zh) 2018-12-21 2019-12-18 光電裝置
CN201980090655.3A CN113383416A (zh) 2018-12-21 2019-12-19 光电器件
US17/414,874 US11984549B2 (en) 2018-12-21 2019-12-19 Optoelectronic device
EP19848783.7A EP3900038A1 (fr) 2018-12-21 2019-12-19 Dispositif optoelectronique
KR1020217022446A KR20210104825A (ko) 2018-12-21 2019-12-19 광전자 장치
PCT/FR2019/053176 WO2020128341A1 (fr) 2018-12-21 2019-12-19 Dispositif optoelectronique
JP2021536250A JP2022515786A (ja) 2018-12-21 2019-12-19 光電子デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1873944A FR3091027B1 (fr) 2018-12-21 2018-12-21 Dispositif optoélectronique

Publications (2)

Publication Number Publication Date
FR3091027A1 FR3091027A1 (fr) 2020-06-26
FR3091027B1 true FR3091027B1 (fr) 2022-11-18

Family

ID=66542439

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1873944A Active FR3091027B1 (fr) 2018-12-21 2018-12-21 Dispositif optoélectronique

Country Status (8)

Country Link
US (1) US11984549B2 (fr)
EP (1) EP3900038A1 (fr)
JP (1) JP2022515786A (fr)
KR (1) KR20210104825A (fr)
CN (1) CN113383416A (fr)
FR (1) FR3091027B1 (fr)
TW (1) TW202038427A (fr)
WO (1) WO2020128341A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3082025B1 (fr) * 2018-06-04 2021-07-16 Isorg Dispositif combinant capteur d'images et un écran d'affichage organiques aptes a la détection d'empreintes digitales
FR3112902B1 (fr) * 2020-07-22 2022-12-16 Aledia Dispositif optoélectronique flexible et son procédé de fabrication
FR3116381B1 (fr) 2020-11-19 2022-12-16 Commissariat Energie Atomique Procédé de fabrication d'un dispositif à LED

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8816383B2 (en) * 2012-07-06 2014-08-26 Invensas Corporation High performance light emitting diode with vias
US8987765B2 (en) * 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
FR3031238B1 (fr) * 2014-12-30 2016-12-30 Aledia Dispositif optoelectronique a diodes electroluminescentes
US9793252B2 (en) * 2015-03-30 2017-10-17 Emagin Corporation Method of integrating inorganic light emitting diode with oxide thin film transistor for display applications
US10741719B2 (en) * 2016-03-12 2020-08-11 Faquir Chand Jain Quantum dot channel (QDC) quantum dot gate transistors, memories and other devices
US10037981B2 (en) * 2016-05-18 2018-07-31 Globalfoundries Inc. Integrated display system with multi-color light emitting diodes (LEDs)
US10026883B2 (en) * 2016-12-20 2018-07-17 Globalfoundries Inc. Wafer bond interconnect structures
KR102571610B1 (ko) * 2017-02-13 2023-08-30 삼성디스플레이 주식회사 반도체 장치 및 이의 제조방법
TWI626738B (zh) 2017-04-06 2018-06-11 宏碁股份有限公司 顯示裝置及其製造方法

Also Published As

Publication number Publication date
US20220059743A1 (en) 2022-02-24
KR20210104825A (ko) 2021-08-25
FR3091027A1 (fr) 2020-06-26
TW202038427A (zh) 2020-10-16
JP2022515786A (ja) 2022-02-22
US11984549B2 (en) 2024-05-14
EP3900038A1 (fr) 2021-10-27
CN113383416A (zh) 2021-09-10
WO2020128341A1 (fr) 2020-06-25

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