FR2928029B1 - Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant. - Google Patents

Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant.

Info

Publication number
FR2928029B1
FR2928029B1 FR0851266A FR0851266A FR2928029B1 FR 2928029 B1 FR2928029 B1 FR 2928029B1 FR 0851266 A FR0851266 A FR 0851266A FR 0851266 A FR0851266 A FR 0851266A FR 2928029 B1 FR2928029 B1 FR 2928029B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
integrated circuit
corresponding integrated
grid semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0851266A
Other languages
English (en)
Other versions
FR2928029A1 (fr
Inventor
Emilie Bernard
Bernard Guillaumot
Philippe Coronel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA, STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics SA
Priority to FR0851266A priority Critical patent/FR2928029B1/fr
Priority to US12/372,415 priority patent/US7977187B2/en
Publication of FR2928029A1 publication Critical patent/FR2928029A1/fr
Application granted granted Critical
Publication of FR2928029B1 publication Critical patent/FR2928029B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
FR0851266A 2008-02-27 2008-02-27 Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant. Expired - Fee Related FR2928029B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0851266A FR2928029B1 (fr) 2008-02-27 2008-02-27 Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant.
US12/372,415 US7977187B2 (en) 2008-02-27 2009-02-17 Method of fabricating a buried-gate semiconductor device and corresponding integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0851266A FR2928029B1 (fr) 2008-02-27 2008-02-27 Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant.

Publications (2)

Publication Number Publication Date
FR2928029A1 FR2928029A1 (fr) 2009-08-28
FR2928029B1 true FR2928029B1 (fr) 2011-04-08

Family

ID=39864943

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0851266A Expired - Fee Related FR2928029B1 (fr) 2008-02-27 2008-02-27 Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant.

Country Status (2)

Country Link
US (1) US7977187B2 (fr)
FR (1) FR2928029B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2235745A1 (fr) * 2007-12-21 2010-10-06 Nxp B.V. Procédé de fabrication amélioré pour des transistors à grille indépendante ou à grille enveloppante
CN104011849B (zh) * 2011-12-23 2016-12-28 英特尔公司 Cmos纳米线结构
US8785310B2 (en) * 2012-01-27 2014-07-22 Tokyo Electron Limited Method of forming conformal metal silicide films
CN110047752B (zh) 2013-03-15 2023-03-17 索尼公司 利用硬掩模层的纳米线晶体管制造
US9391163B2 (en) 2014-10-03 2016-07-12 International Business Machines Corporation Stacked planar double-gate lamellar field-effect transistor
FR3087046B1 (fr) * 2018-10-05 2020-12-25 Commissariat Energie Atomique Structure a barreaux semi-conducteurs superposes ayant une enveloppe semi-conductrice uniforme

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4803539A (en) * 1985-03-29 1989-02-07 International Business Machines Corporation Dopant control of metal silicide formation
US5004705A (en) * 1989-01-06 1991-04-02 Unitrode Corporation Inverted epitaxial process
DE19924571C2 (de) * 1999-05-28 2001-03-15 Siemens Ag Verfahren zur Herstellung eines Doppel-Gate-MOSFET-Transistors
DE19928564A1 (de) * 1999-06-22 2001-01-04 Infineon Technologies Ag Mehrkanal-MOSFET und Verfahren zu seiner Herstellung
US20030054637A1 (en) * 2001-09-20 2003-03-20 Macronix International Co., Ltd. Method for forming silicide
US6661044B2 (en) * 2001-10-22 2003-12-09 Winbond Electronics Corp. Method of manufacturing MOSEFT and structure thereof
FR2845201B1 (fr) * 2002-09-27 2005-08-05 St Microelectronics Sa Procede de formation de portions d'un materiau compose a l'interieur d'une cavite et circuit electrique incorporant des portions de materiau compose ainsi obtenues
FR2853454B1 (fr) * 2003-04-03 2005-07-15 St Microelectronics Sa Transistor mos haute densite
KR100471173B1 (ko) * 2003-05-15 2005-03-10 삼성전자주식회사 다층채널을 갖는 트랜지스터 및 그 제조방법
US6787425B1 (en) * 2003-06-16 2004-09-07 Texas Instruments Incorporated Methods for fabricating transistor gate structures
US7095065B2 (en) 2003-08-05 2006-08-22 Advanced Micro Devices, Inc. Varying carrier mobility in semiconductor devices to achieve overall design goals
JP3962009B2 (ja) * 2003-12-05 2007-08-22 株式会社東芝 半導体装置の製造方法
KR100526887B1 (ko) * 2004-02-10 2005-11-09 삼성전자주식회사 전계효과 트랜지스터 및 그의 제조방법
KR100612415B1 (ko) 2004-04-09 2006-08-16 삼성전자주식회사 올 어라운드된 채널 영역을 갖는 트랜지스터 및 그 제조방법
KR100625177B1 (ko) * 2004-05-25 2006-09-20 삼성전자주식회사 멀티-브리지 채널형 모오스 트랜지스터의 제조 방법
KR100555567B1 (ko) 2004-07-30 2006-03-03 삼성전자주식회사 다중가교채널 트랜지스터 제조 방법
KR100640616B1 (ko) * 2004-12-21 2006-11-01 삼성전자주식회사 매몰 게이트 패턴을 포함하는 전계 효과 트랜지스터구조물 및 그것을 포함하는 반도체 소자의 제조방법
JP2006278369A (ja) * 2005-03-28 2006-10-12 Fujitsu Ltd 半導体装置の製造方法
US7470943B2 (en) * 2005-08-22 2008-12-30 International Business Machines Corporation High performance MOSFET comprising a stressed gate metal silicide layer and method of fabricating the same
KR100630763B1 (ko) * 2005-08-30 2006-10-04 삼성전자주식회사 다중 채널을 갖는 ｍｏｓ 트랜지스터의 제조방법
KR100718149B1 (ko) * 2006-02-07 2007-05-14 삼성전자주식회사 게이트-올-어라운드 구조의 반도체 소자
JP2007288096A (ja) * 2006-04-20 2007-11-01 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7749898B2 (en) * 2008-06-24 2010-07-06 Globalfoundries Inc. Silicide interconnect structure

Also Published As

Publication number Publication date
US7977187B2 (en) 2011-07-12
FR2928029A1 (fr) 2009-08-28
US20090212330A1 (en) 2009-08-27

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Effective date: 20151030