FR2910710B1 - Capteur d'image cmos a photodiode piegee a faible tension d'alimentation - Google Patents

Capteur d'image cmos a photodiode piegee a faible tension d'alimentation

Info

Publication number
FR2910710B1
FR2910710B1 FR0655830A FR0655830A FR2910710B1 FR 2910710 B1 FR2910710 B1 FR 2910710B1 FR 0655830 A FR0655830 A FR 0655830A FR 0655830 A FR0655830 A FR 0655830A FR 2910710 B1 FR2910710 B1 FR 2910710B1
Authority
FR
France
Prior art keywords
voltage
picodiode
image sensor
cmos image
trapped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0655830A
Other languages
English (en)
Other versions
FR2910710A1 (fr
Inventor
Frederic Barbier
Yvon Cazaux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0655830A priority Critical patent/FR2910710B1/fr
Priority to US11/959,023 priority patent/US8284280B2/en
Publication of FR2910710A1 publication Critical patent/FR2910710A1/fr
Application granted granted Critical
Publication of FR2910710B1 publication Critical patent/FR2910710B1/fr
Priority to US13/605,685 priority patent/US9191597B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR0655830A 2006-12-21 2006-12-21 Capteur d'image cmos a photodiode piegee a faible tension d'alimentation Expired - Fee Related FR2910710B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0655830A FR2910710B1 (fr) 2006-12-21 2006-12-21 Capteur d'image cmos a photodiode piegee a faible tension d'alimentation
US11/959,023 US8284280B2 (en) 2006-12-21 2007-12-18 Pinned photodiode CMOS image sensor with a low supply voltage
US13/605,685 US9191597B2 (en) 2006-12-21 2012-09-06 Pinned photodiode CMOS image sensor with a low supply voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0655830A FR2910710B1 (fr) 2006-12-21 2006-12-21 Capteur d'image cmos a photodiode piegee a faible tension d'alimentation

Publications (2)

Publication Number Publication Date
FR2910710A1 FR2910710A1 (fr) 2008-06-27
FR2910710B1 true FR2910710B1 (fr) 2009-03-13

Family

ID=37909797

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0655830A Expired - Fee Related FR2910710B1 (fr) 2006-12-21 2006-12-21 Capteur d'image cmos a photodiode piegee a faible tension d'alimentation

Country Status (2)

Country Link
US (2) US8284280B2 (fr)
FR (1) FR2910710B1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2910710B1 (fr) * 2006-12-21 2009-03-13 St Microelectronics Sa Capteur d'image cmos a photodiode piegee a faible tension d'alimentation
US20090272881A1 (en) * 2008-05-05 2009-11-05 Xiangli Li Apparatus, method, and system providing pixel having increased fill factor
JP5258416B2 (ja) * 2008-06-27 2013-08-07 パナソニック株式会社 固体撮像装置
US20100252717A1 (en) * 2008-09-29 2010-10-07 Benoit Dupont Active-pixel sensor
JP2011229120A (ja) * 2010-03-30 2011-11-10 Sony Corp 固体撮像装置、固体撮像装置の信号処理方法、及び、電子機器
JP2012010008A (ja) * 2010-06-23 2012-01-12 Sony Corp 撮像素子及び撮像装置
US9001240B2 (en) * 2011-01-20 2015-04-07 Semiconductor Components Industries, Llc Common element pixel architecture (CEPA) for fast speed readout
US9491386B2 (en) * 2014-12-03 2016-11-08 Omnivision Technologies, Inc. Floating diffusion reset level boost in pixel cell
US10063796B2 (en) 2016-04-01 2018-08-28 Stmicroelectronics (Grenoble 2) Sas Sensing pixel having sampling circuitry to sample photodiode signal multiple times before reset of photodiode
CN110858297B (zh) * 2018-08-24 2023-10-24 华为技术有限公司 光学指纹识别电路
FR3100925B1 (fr) 2019-09-17 2021-10-15 Commissariat Energie Atomique Capteur d’image à plage dynamique augmentée

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2965777B2 (ja) * 1992-01-29 1999-10-18 オリンパス光学工業株式会社 固体撮像装置
US6201270B1 (en) * 1997-04-07 2001-03-13 Pao-Jung Chen High speed CMOS photodetectors with wide range operating region and fixed pattern noise reduction
US6091280A (en) * 1998-04-21 2000-07-18 Texas Instruments Incorporated CMOS image sensor based on four transistor photocell
US6963372B1 (en) * 1998-04-24 2005-11-08 Canon Kabushiki Kaisha Solid-state image sensing apparatus and method of operating the same
US6587142B1 (en) * 1998-09-09 2003-07-01 Pictos Technologies, Inc. Low-noise active-pixel sensor for imaging arrays with high speed row reset
JP2001189893A (ja) * 1999-12-28 2001-07-10 Toshiba Corp 固体撮像装置
JP3793016B2 (ja) * 2000-11-06 2006-07-05 キヤノン株式会社 固体撮像装置及び撮像システム
EP1333661B1 (fr) * 2002-02-01 2011-05-11 STMicroelectronics Limited Capteur d'images amélioré
US7375748B2 (en) * 2002-08-29 2008-05-20 Micron Technology, Inc. Differential readout from pixels in CMOS sensor
US7019277B2 (en) * 2003-03-13 2006-03-28 Psion Teklogix Systems Inc. Imaging device
US7623171B2 (en) * 2003-05-07 2009-11-24 Aptina Imaging Corporation Multiple crawbar switching in charge domain linear operations
JP4194544B2 (ja) * 2003-12-05 2008-12-10 キヤノン株式会社 固体撮像装置及び固体撮像装置の駆動方法
US7372493B2 (en) * 2004-07-12 2008-05-13 Micron Technology, Inc. Column-wise clamp voltage driver for suppression of noise in an imager
JP2006033631A (ja) * 2004-07-20 2006-02-02 Matsushita Electric Ind Co Ltd 固体撮像装置及びサンプリング回路
JP2007013292A (ja) * 2005-06-28 2007-01-18 Olympus Corp 撮像装置
JP4372097B2 (ja) * 2005-12-27 2009-11-25 株式会社東芝 赤外線センサ、赤外線カメラ、赤外線センサの駆動方法および赤外線カメラの駆動方法
US8040405B2 (en) * 2006-07-05 2011-10-18 Olympus Corporation Solid-state imaging apparatus
US8283632B2 (en) * 2006-09-29 2012-10-09 Teledyne Scientific & Imaging, Llc Multi-color read-out integrated circuit
FR2910710B1 (fr) * 2006-12-21 2009-03-13 St Microelectronics Sa Capteur d'image cmos a photodiode piegee a faible tension d'alimentation

Also Published As

Publication number Publication date
US9191597B2 (en) 2015-11-17
US8284280B2 (en) 2012-10-09
FR2910710A1 (fr) 2008-06-27
US20080170147A1 (en) 2008-07-17
US20130009041A1 (en) 2013-01-10

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