FR3100925B1 - Capteur d’image à plage dynamique augmentée - Google Patents

Capteur d’image à plage dynamique augmentée Download PDF

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Publication number
FR3100925B1
FR3100925B1 FR1910259A FR1910259A FR3100925B1 FR 3100925 B1 FR3100925 B1 FR 3100925B1 FR 1910259 A FR1910259 A FR 1910259A FR 1910259 A FR1910259 A FR 1910259A FR 3100925 B1 FR3100925 B1 FR 3100925B1
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FR
France
Prior art keywords
image sensor
pixel circuit
turning
dynamic range
current source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1910259A
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English (en)
Other versions
FR3100925A1 (fr
Inventor
François Ayel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1910259A priority Critical patent/FR3100925B1/fr
Priority to US17/019,075 priority patent/US11417690B2/en
Publication of FR3100925A1 publication Critical patent/FR3100925A1/fr
Application granted granted Critical
Publication of FR3100925B1 publication Critical patent/FR3100925B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Capteur d’image à plage dynamique augmentée La présente description concerne un capteur d’image comprenant : un circuit de pixel (300) comprenant un premier transistor (106) ayant l’un de ses nœuds de conduction principaux connecté à une ligne de sortie (VX<y>), l’autre de ses nœuds de conduction principaux couplé à un rail de tension d’alimentation (VPP) par l’intermédiaire d’un transistor de lecture (108), et son nœud de commande couplé à un nœud de détection (SN) du circuit de pixel (300) ; une source de courant (110) couplée à la ligne de sortie (VX<y>) ; et un circuit de commande agencé pour lire une tension de pixel dans le circuit de pixel (300) : en activant la source de courant (110) pendant que le transistor de lecture (108) est non conducteur ; et en désactivant la source de courant (110) et en activant le transistor de lecture (108) du circuit de pixel afin d’imposer une tension renforcée (Vboost) sur le nœud de détection (SN). Figure pour l'abrégé : Fig. 3
FR1910259A 2019-09-17 2019-09-17 Capteur d’image à plage dynamique augmentée Active FR3100925B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1910259A FR3100925B1 (fr) 2019-09-17 2019-09-17 Capteur d’image à plage dynamique augmentée
US17/019,075 US11417690B2 (en) 2019-09-17 2020-09-11 Image sensor with increased dynamic range

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1910259A FR3100925B1 (fr) 2019-09-17 2019-09-17 Capteur d’image à plage dynamique augmentée
FR1910259 2019-09-17

Publications (2)

Publication Number Publication Date
FR3100925A1 FR3100925A1 (fr) 2021-03-19
FR3100925B1 true FR3100925B1 (fr) 2021-10-15

Family

ID=68807129

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1910259A Active FR3100925B1 (fr) 2019-09-17 2019-09-17 Capteur d’image à plage dynamique augmentée

Country Status (2)

Country Link
US (1) US11417690B2 (fr)
FR (1) FR3100925B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022146577A (ja) * 2021-03-22 2022-10-05 キオクシア株式会社 半導体装置及び半導体記憶装置
FR3134652A1 (fr) * 2022-04-13 2023-10-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives Matrice de pixels

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4713997B2 (ja) * 2005-10-28 2011-06-29 株式会社東芝 固体撮像装置
FR2910710B1 (fr) 2006-12-21 2009-03-13 St Microelectronics Sa Capteur d'image cmos a photodiode piegee a faible tension d'alimentation
US8659682B2 (en) * 2008-05-30 2014-02-25 Olympus Corporation Solid-state imaging apparatus
JP5258416B2 (ja) 2008-06-27 2013-08-07 パナソニック株式会社 固体撮像装置
JP4686582B2 (ja) 2008-08-28 2011-05-25 株式会社東芝 固体撮像装置
JP2011044879A (ja) * 2009-08-20 2011-03-03 Toshiba Corp 固体撮像装置およびその駆動方法
JP2012114772A (ja) * 2010-11-26 2012-06-14 Toshiba Corp 固体撮像装置
KR20130015915A (ko) * 2011-08-05 2013-02-14 에스케이하이닉스 주식회사 이미지 센서
JP6555956B2 (ja) * 2014-07-31 2019-08-07 株式会社半導体エネルギー研究所 撮像装置、監視装置、及び電子機器
US10205903B2 (en) * 2015-10-27 2019-02-12 Analog Value Ltd. Compact readout circuit and a method for reading a pixel using a compact readout circuit
US11284033B2 (en) * 2017-10-13 2022-03-22 Sony Semiconductor Solutions Corporation Solid-state image sensor, method of driving solid-state image sensor, and electronic apparatus
US10171765B1 (en) * 2017-12-22 2019-01-01 Omnivision Technologies, Inc. Bit line boost for fast settling with current source of adjustable size
US20200396406A1 (en) * 2019-06-12 2020-12-17 Semiconductor Components Industries, Llc Image sensors having boost current control circuitry for column settling speedup
US11445140B2 (en) * 2019-08-30 2022-09-13 Semiconductor Components Industries, Llc Imaging systems with adjustable amplifier circuitry

Also Published As

Publication number Publication date
FR3100925A1 (fr) 2021-03-19
US11417690B2 (en) 2022-08-16
US20210082981A1 (en) 2021-03-18

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