FR2780551B1 - Micromodule electronique integre et procede de fabrication d'un tel micromodule - Google Patents

Micromodule electronique integre et procede de fabrication d'un tel micromodule

Info

Publication number
FR2780551B1
FR2780551B1 FR9808426A FR9808426A FR2780551B1 FR 2780551 B1 FR2780551 B1 FR 2780551B1 FR 9808426 A FR9808426 A FR 9808426A FR 9808426 A FR9808426 A FR 9808426A FR 2780551 B1 FR2780551 B1 FR 2780551B1
Authority
FR
France
Prior art keywords
micromodule
insulation layer
integrated circuit
manufacturing
circuit chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9808426A
Other languages
English (en)
Other versions
FR2780551A1 (fr
Inventor
Jacek Kowalski
Didier Serra
Frederic Bertholio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Inside Technologies SA
Original Assignee
Inside Technologies SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR9808426A priority Critical patent/FR2780551B1/fr
Application filed by Inside Technologies SA filed Critical Inside Technologies SA
Priority to AU42687/99A priority patent/AU4268799A/en
Priority to CNB998100951A priority patent/CN100342536C/zh
Priority to US09/720,701 priority patent/US6319827B1/en
Priority to EP99925077A priority patent/EP1097479A1/fr
Priority to JP2000557500A priority patent/JP2002519866A/ja
Priority to PCT/FR1999/001405 priority patent/WO2000001013A1/fr
Publication of FR2780551A1 publication Critical patent/FR2780551A1/fr
Application granted granted Critical
Publication of FR2780551B1 publication Critical patent/FR2780551B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07745—Mounting details of integrated circuit chips
    • G06K19/07747—Mounting details of integrated circuit chips at least one of the integrated circuit chips being mounted as a module
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
    • G06K19/0775—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card arrangements for connecting the integrated circuit to the antenna
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49855—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/20—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by the transmission technique; characterised by the transmission medium
    • H04B5/24—Inductive coupling
    • H04B5/26—Inductive coupling using coils
    • H04B5/263—Multiple coils at either side
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
FR9808426A 1998-06-29 1998-06-29 Micromodule electronique integre et procede de fabrication d'un tel micromodule Expired - Fee Related FR2780551B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR9808426A FR2780551B1 (fr) 1998-06-29 1998-06-29 Micromodule electronique integre et procede de fabrication d'un tel micromodule
CNB998100951A CN100342536C (zh) 1998-06-29 1999-06-14 集成电子微组件及制造该微组件的方法
US09/720,701 US6319827B1 (en) 1998-06-29 1999-06-14 Integrated electronic micromodule and method for making same
EP99925077A EP1097479A1 (fr) 1998-06-29 1999-06-14 Micromodule electronique integre et procede de fabrication d'un tel micromodule
AU42687/99A AU4268799A (en) 1998-06-29 1999-06-14 Integrated electronic micromodule and method for making same
JP2000557500A JP2002519866A (ja) 1998-06-29 1999-06-14 集積電子マイクロモジュール及びその製造方法
PCT/FR1999/001405 WO2000001013A1 (fr) 1998-06-29 1999-06-14 Micromodule electronique integre et procede de fabrication d'un tel micromodule

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9808426A FR2780551B1 (fr) 1998-06-29 1998-06-29 Micromodule electronique integre et procede de fabrication d'un tel micromodule

Publications (2)

Publication Number Publication Date
FR2780551A1 FR2780551A1 (fr) 1999-12-31
FR2780551B1 true FR2780551B1 (fr) 2001-09-07

Family

ID=9528147

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9808426A Expired - Fee Related FR2780551B1 (fr) 1998-06-29 1998-06-29 Micromodule electronique integre et procede de fabrication d'un tel micromodule

Country Status (7)

Country Link
US (1) US6319827B1 (fr)
EP (1) EP1097479A1 (fr)
JP (1) JP2002519866A (fr)
CN (1) CN100342536C (fr)
AU (1) AU4268799A (fr)
FR (1) FR2780551B1 (fr)
WO (1) WO2000001013A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2778034C1 (ru) * 2021-06-03 2022-08-12 Акционерное общество "Российская корпорация ракетно-космического приборостроения и информационных систем" (АО "Российские космические системы") Микромодуль космического назначения

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2790849B1 (fr) * 1999-03-12 2001-04-27 Gemplus Card Int Procede de fabrication pour dispositif electronique du type carte sans contact
JP2001188891A (ja) * 2000-01-05 2001-07-10 Shinko Electric Ind Co Ltd 非接触型ｉｃカード
FR2812482B1 (fr) 2000-07-28 2003-01-24 Inside Technologies Dispositif electronique portable comprenant plusieurs circuits integres sans contact
DE10114355A1 (de) * 2001-03-22 2002-10-17 Intec Holding Gmbh Verfahren zur Herstellung einer kontaktlosen multifunktionalen Chipkarte sowie entsprechend hergestellte Chipkarte
US7498196B2 (en) 2001-03-30 2009-03-03 Megica Corporation Structure and manufacturing method of chip scale package
US6882239B2 (en) 2001-05-08 2005-04-19 Formfactor, Inc. Electromagnetically coupled interconnect system
US6673698B1 (en) 2002-01-19 2004-01-06 Megic Corporation Thin film semiconductor package utilizing a glass substrate with composite polymer/metal interconnect layers
TW503496B (en) * 2001-12-31 2002-09-21 Megic Corp Chip packaging structure and manufacturing process of the same
TW544882B (en) 2001-12-31 2003-08-01 Megic Corp Chip package structure and process thereof
TW584950B (en) 2001-12-31 2004-04-21 Megic Corp Chip packaging structure and process thereof
US7652359B2 (en) * 2002-12-27 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Article having display device
US7208347B2 (en) * 2003-02-28 2007-04-24 Siemens Aktiengesellschaft Connection technology for power semiconductors comprising a layer of electrically insulating material that follows the surface contours
DE10340129B4 (de) * 2003-08-28 2006-07-13 Infineon Technologies Ag Elektronisches Modul mit Steckkontakten und Verfahren zur Herstellung desselben
US7566001B2 (en) 2003-08-29 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. IC card
US7466157B2 (en) 2004-02-05 2008-12-16 Formfactor, Inc. Contactless interfacing of test signals with a device under test
US8407097B2 (en) * 2004-04-15 2013-03-26 Hand Held Products, Inc. Proximity transaction apparatus and methods of use thereof
US20060202269A1 (en) * 2005-03-08 2006-09-14 Semiconductor Energy Laboratory Co., Ltd. Wireless chip and electronic appliance having the same
JP4547625B2 (ja) * 2005-07-04 2010-09-22 ソニー株式会社 通信ボード
US7410894B2 (en) * 2005-07-27 2008-08-12 International Business Machines Corporation Post last wiring level inductor using patterned plate process
US7795700B2 (en) * 2008-02-28 2010-09-14 Broadcom Corporation Inductively coupled integrated circuit with magnetic communication path and methods for use therewith
US8724340B2 (en) 2008-09-09 2014-05-13 Infineon Technologies Ag Data carrier for contactless data transmission and a method for producing such a data carrier
DE102008046407B4 (de) * 2008-09-09 2015-12-03 Infineon Technologies Ag Datenträger für kontaktlose Datenübertragung und ein Verfahren zur Herstellung eines solchen Datenträgers
US9146207B2 (en) * 2012-01-10 2015-09-29 Hzo, Inc. Methods, apparatuses and systems for sensing exposure of electronic devices to moisture
CN103366215B (zh) * 2012-04-05 2016-08-03 英飞凌科技股份有限公司 用于无接触数据传输的数据载体及其产生方法
US20140042230A1 (en) * 2012-08-09 2014-02-13 Infineon Technologies Ag Chip card module with separate antenna and chip card inlay using same
US9202162B2 (en) * 2012-11-09 2015-12-01 Maxim Integrated Products, Inc. Embedded radio frequency identification (RFID) package
FR3040534A1 (fr) 2015-08-28 2017-03-03 St Microelectronics Sa Dispositif electronique muni d'une couche conductrice et procede de fabrication
FR3040535B1 (fr) 2015-08-28 2019-07-05 Stmicroelectronics (Grenoble 2) Sas Dispositif electronique muni d'un element conducteur integre et procede de fabrication
FR3041859B1 (fr) 2015-09-30 2018-03-02 Stmicroelectronics (Grenoble 2) Sas Dispositif electronique muni d'un fil conducteur integre et procede de fabrication
DE102016106698A1 (de) * 2016-04-12 2017-10-12 Infineon Technologies Ag Chipkarte und Verfahren zum Herstellen einer Chipkarte
FR3123778A1 (fr) 2021-06-07 2022-12-09 Eyco Procédé de fabrication d’un circuit imprimé intégrant un composant électronique et module de carte à puce obtenu par ledit procédé.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3190057B2 (ja) * 1990-07-02 2001-07-16 株式会社東芝 複合集積回路装置
JPH05226506A (ja) * 1992-02-18 1993-09-03 Mitsubishi Materials Corp 表面実装型複合部品及びその製造方法
GB2300068B (en) * 1992-07-21 1997-01-22 Mitsubishi Electric Corp Semiconductor device
JPH0714876A (ja) * 1993-06-17 1995-01-17 Matsushita Electron Corp 集積回路装置及びその製造方法
JPH07106514A (ja) * 1993-10-07 1995-04-21 Toshiba Corp 半導体集積回路装置
JP2904086B2 (ja) * 1995-12-27 1999-06-14 日本電気株式会社 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2778034C1 (ru) * 2021-06-03 2022-08-12 Акционерное общество "Российская корпорация ракетно-космического приборостроения и информационных систем" (АО "Российские космические системы") Микромодуль космического назначения

Also Published As

Publication number Publication date
AU4268799A (en) 2000-01-17
FR2780551A1 (fr) 1999-12-31
EP1097479A1 (fr) 2001-05-09
JP2002519866A (ja) 2002-07-02
CN1315056A (zh) 2001-09-26
US6319827B1 (en) 2001-11-20
CN100342536C (zh) 2007-10-10
WO2000001013A1 (fr) 2000-01-06

Similar Documents

Publication Publication Date Title
FR2780551B1 (fr) Micromodule electronique integre et procede de fabrication d'un tel micromodule
TW362279B (en) Semiconductor device and method for fabricating the same, memory core chip and memory peripheral circuit chip
DE69132880D1 (de) Halbleiterchipanordnungen, herstellungsmethoden und komponenten für dieselben
ATE173552T1 (de) Trägerelement für integrierten schaltkreis
EP0996154A4 (fr) Dispositif a semi-conducteurs et son procede de fabrication, substrat a circuits et dispositif electronique
SG81960A1 (en) Semiconductor device, substrate for a semiconductor device, method of manufacture thereof, and electronic instrument
TW336348B (en) Integrated circuit having a dummy structure and method of making the same
FR2790849B1 (fr) Procede de fabrication pour dispositif electronique du type carte sans contact
MY120575A (en) Semiconductor device and method of manufacturing same
TW328156B (en) Resin-sealing type semiconductor and method of manufacture thereof
FR2840711B1 (fr) Carte de circuit integre et procede de fabrication de celle-ci
UA52673C2 (uk) Спосіб виготовлення модуля чіп-картки, модуль чіп-картки, виготовлений за цим способом, і комбінована чіп-картка, що містить цей модуль
TW342580B (en) Printed circuit assembly and method of manufacture therefor
TW373196B (en) A micromagnetic device for power processing applications and method of manufacture therefor
EP1014301A4 (fr) Dispositif de reponse dans un systeme de communication a carte a circuit integre
CA2159243A1 (fr) Methode de fabrication en serie de dispositifs a semiconducteurs format plaquette
EP1335422A3 (fr) Dispositif semi-conducteur à dimensions de puce et procédé de H01L21/60B2fabrication
FR2769389B1 (fr) Carte a microcircuit combinant des plages de contact exterieur et une antenne, et procede de fabrication d'une telle carte
RU98118496A (ru) Карта со встроенной микросхемой и способ изготовления карты со встроенной микросхемой
TW374939B (en) Method of formation of 2 gate oxide layers of different thickness in an IC
MY115056A (en) Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof
FR2726940B1 (fr) Dispositif a semiconducteurs comportant un boitier et une embase isolante, et procede de fabrication de ce dispositif
WO1995027313A1 (fr) Procede de fabrication d'un anti-fusible dote de pieces d'ecartement en silicium et anti-fusible ainsi obtenu
ATE173848T1 (de) Schaltungsanordnung mit einem chipkartenmodul und einer damit verbundenen spule
EP0759637A3 (fr) Boítier à semi-conducteurs et méthode d'assemblage

Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
GC Lien (pledge) constituted
AU Other action affecting the ownership or exploitation of an industrial property right
GC Lien (pledge) constituted
RG Lien (pledge) cancelled
ST Notification of lapse

Effective date: 20110228