FR2680590B1 - Agencement d'un reseau de cellules redondant pour un dispositif de memoire a semiconducteurs. - Google Patents
Agencement d'un reseau de cellules redondant pour un dispositif de memoire a semiconducteurs.Info
- Publication number
- FR2680590B1 FR2680590B1 FR9200546A FR9200546A FR2680590B1 FR 2680590 B1 FR2680590 B1 FR 2680590B1 FR 9200546 A FR9200546 A FR 9200546A FR 9200546 A FR9200546 A FR 9200546A FR 2680590 B1 FR2680590 B1 FR 2680590B1
- Authority
- FR
- France
- Prior art keywords
- arrangement
- memory device
- semiconductor memory
- cell array
- redundant cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910014407A KR940008211B1 (ko) | 1991-08-21 | 1991-08-21 | 반도체메모리장치의 리던던트 셀 어레이 배열방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2680590A1 FR2680590A1 (fr) | 1993-02-26 |
FR2680590B1 true FR2680590B1 (fr) | 1994-12-09 |
Family
ID=19318849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9200546A Expired - Lifetime FR2680590B1 (fr) | 1991-08-21 | 1992-01-20 | Agencement d'un reseau de cellules redondant pour un dispositif de memoire a semiconducteurs. |
Country Status (7)
Country | Link |
---|---|
US (1) | US5355337A (fr) |
JP (1) | JPH0562497A (fr) |
KR (1) | KR940008211B1 (fr) |
DE (1) | DE4201847C2 (fr) |
FR (1) | FR2680590B1 (fr) |
GB (1) | GB2258931B (fr) |
IT (1) | IT1258816B (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06338199A (ja) * | 1993-05-27 | 1994-12-06 | Hitachi Ltd | 半導体記憶装置 |
US5440517A (en) * | 1994-08-15 | 1995-08-08 | Micron Technology, Inc. | DRAMs having on-chip row copy circuits for use in testing and video imaging and method for operating same |
US5544113A (en) * | 1994-11-30 | 1996-08-06 | International Business Machines Corporation | Random access memory having a flexible array redundancy scheme |
KR0174338B1 (ko) * | 1994-11-30 | 1999-04-01 | 윌리엄 티. 엘리스 | 간단하게 테스트할 수 있는 구성을 갖는 랜덤 액세스 메모리 |
EP0911747B1 (fr) * | 1997-10-20 | 2004-01-02 | STMicroelectronics S.r.l. | CAD pour dispositifs de mémoires redondants |
DE69909969D1 (de) | 1999-05-12 | 2003-09-04 | St Microelectronics Srl | Unflüchtiger Speicher mit Zeilenredundanz |
JP2005338926A (ja) | 2004-05-24 | 2005-12-08 | Toshiba Corp | 携帯可能電子装置 |
US7676776B2 (en) * | 2007-06-25 | 2010-03-09 | International Business Machines Corporation | Spare gate array cell distribution analysis |
KR102412610B1 (ko) | 2015-12-24 | 2022-06-23 | 삼성전자주식회사 | 포스트 패키지 리페어 동작을 수행하는 메모리 장치 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4281398A (en) * | 1980-02-12 | 1981-07-28 | Mostek Corporation | Block redundancy for memory array |
US4796233A (en) * | 1984-10-19 | 1989-01-03 | Fujitsu Limited | Bipolar-transistor type semiconductor memory device having redundancy configuration |
US4745582A (en) * | 1984-10-19 | 1988-05-17 | Fujitsu Limited | Bipolar-transistor type random access memory device having redundancy configuration |
US4829481A (en) * | 1985-08-20 | 1989-05-09 | Sgs-Thomson Microelectronics, Inc. | Defective element disabling circuit having a laser-blown fuse |
JP2530610B2 (ja) * | 1986-02-27 | 1996-09-04 | 富士通株式会社 | 半導体記憶装置 |
KR890003691B1 (ko) * | 1986-08-22 | 1989-09-30 | 삼성전자 주식회사 | 블럭 열 리던던씨 회로 |
JPS63168900A (ja) * | 1987-01-06 | 1988-07-12 | Toshiba Corp | 半導体記憶装置 |
JP2558787B2 (ja) * | 1988-02-15 | 1996-11-27 | 松下電子工業株式会社 | 記憶装置 |
US4866676A (en) * | 1988-03-24 | 1989-09-12 | Motorola, Inc. | Testing arrangement for a DRAM with redundancy |
JPH0235699A (ja) * | 1988-07-26 | 1990-02-06 | Nec Corp | 化合物半導体メモリデバイス |
JP2999477B2 (ja) * | 1989-01-19 | 2000-01-17 | 三菱電機株式会社 | 半導体記憶装置 |
KR910005601B1 (ko) * | 1989-05-24 | 1991-07-31 | 삼성전자주식회사 | 리던던트 블럭을 가지는 반도체 메모리장치 |
JPH02310898A (ja) * | 1989-05-25 | 1990-12-26 | Nec Corp | メモリ回路 |
EP0411626B1 (fr) * | 1989-08-04 | 1995-10-25 | Fujitsu Limited | Dispositif de mémoire à semiconducteur à redondance |
-
1991
- 1991-08-21 KR KR1019910014407A patent/KR940008211B1/ko not_active IP Right Cessation
-
1992
- 1992-01-20 FR FR9200546A patent/FR2680590B1/fr not_active Expired - Lifetime
- 1992-01-21 GB GB9201272A patent/GB2258931B/en not_active Expired - Lifetime
- 1992-01-23 IT ITMI920120A patent/IT1258816B/it active IP Right Grant
- 1992-01-24 DE DE4201847A patent/DE4201847C2/de not_active Expired - Lifetime
- 1992-01-24 JP JP4010885A patent/JPH0562497A/ja active Pending
- 1992-04-13 US US07/867,461 patent/US5355337A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ITMI920120A1 (it) | 1993-07-23 |
KR940008211B1 (ko) | 1994-09-08 |
DE4201847A1 (de) | 1993-02-25 |
GB9201272D0 (en) | 1992-03-11 |
DE4201847C2 (de) | 1994-02-17 |
US5355337A (en) | 1994-10-11 |
ITMI920120A0 (it) | 1992-01-23 |
GB2258931A (en) | 1993-02-24 |
FR2680590A1 (fr) | 1993-02-26 |
IT1258816B (it) | 1996-02-29 |
JPH0562497A (ja) | 1993-03-12 |
GB2258931B (en) | 1995-06-14 |
KR930005036A (ko) | 1993-03-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2640796B1 (fr) | Dispositif de memoire a semi-conducteurs | |
FR2600453B1 (fr) | Dispositif de memoire a semi-conducteurs | |
FR2506990B1 (fr) | Dispositif de memoire a semi-conducteurs | |
FR2533738B1 (fr) | Dispositif de memoire a semiconducteurs | |
FR2679368B1 (fr) | Memoire tampon de sortie de donnees d'un dispositif de memoire a semiconducteurs. | |
NL191814B (nl) | Halfgeleidergeheugeninrichting. | |
DE3889097D1 (de) | Halbleiterspeicheranordnung. | |
DE68923505D1 (de) | Halbleiterspeicheranordnung. | |
IT1241520B (it) | "dispositivo di memoria a semiconduttori". | |
DE68918367D1 (de) | Halbleiterspeicheranordnung. | |
FR2551904B1 (fr) | Dispositif de memoire a semiconducteurs | |
DE68923942D1 (de) | Nichtflüchtiges Halbleiterspeichersystem. | |
DE3883865D1 (de) | Halbleiterspeicheranordnung mit einem Register. | |
FR2687488B1 (fr) | Dispositif pour memoire a semi-conducteurs avec un circuit de generation d'un signal d'horloge pour des lignes de bit separees. | |
DE68923588D1 (de) | Halbleiterspeicheranordnung. | |
DE68917187D1 (de) | Zellenmusteranordnung einer Halbleiterspeichereinrichtung. | |
FR2583202B1 (fr) | Dispositif de memoire a semiconducteurs | |
FR2578085B1 (fr) | Dispositif de memoire a semiconducteur | |
EP0364110A3 (en) | Semiconductor memory device having a serial access memory | |
DE68921900D1 (de) | Halbleiterspeicheranordnung mit serieller Zugriffsanordnung. | |
FR2680590B1 (fr) | Agencement d'un reseau de cellules redondant pour un dispositif de memoire a semiconducteurs. | |
FR2533348B1 (fr) | Dispositif de memoire a semiconducteurs | |
FR2634047B1 (fr) | Pilote d'amplificateur de lecture pour dispositif a memoire | |
FR2687003B1 (fr) | Circuit de sortie de donnees pour un dispositif de memoire a semi-conducteur. | |
DE68924080D1 (de) | Halbleiterspeichervorrichtung. |