FR2616271B1 - Circuit integre comprenant en particulier un mesfet protege contre les courants de fuites, sur substrat semi-isolant - Google Patents

Circuit integre comprenant en particulier un mesfet protege contre les courants de fuites, sur substrat semi-isolant

Info

Publication number
FR2616271B1
FR2616271B1 FR888807364A FR8807364A FR2616271B1 FR 2616271 B1 FR2616271 B1 FR 2616271B1 FR 888807364 A FR888807364 A FR 888807364A FR 8807364 A FR8807364 A FR 8807364A FR 2616271 B1 FR2616271 B1 FR 2616271B1
Authority
FR
France
Prior art keywords
mesfet
semi
integrated circuit
insulating substrate
circuit including
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR888807364A
Other languages
English (en)
Other versions
FR2616271A1 (fr
Inventor
Minoru Noda
Noriyuki Tanino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2616271A1 publication Critical patent/FR2616271A1/fr
Application granted granted Critical
Publication of FR2616271B1 publication Critical patent/FR2616271B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/906—Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
FR888807364A 1987-06-03 1988-06-02 Circuit integre comprenant en particulier un mesfet protege contre les courants de fuites, sur substrat semi-isolant Expired - Lifetime FR2616271B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62139171A JPS63302535A (ja) 1987-06-03 1987-06-03 ガリウム砒素集積回路

Publications (2)

Publication Number Publication Date
FR2616271A1 FR2616271A1 (fr) 1988-12-09
FR2616271B1 true FR2616271B1 (fr) 1990-11-16

Family

ID=15239232

Family Applications (1)

Application Number Title Priority Date Filing Date
FR888807364A Expired - Lifetime FR2616271B1 (fr) 1987-06-03 1988-06-02 Circuit integre comprenant en particulier un mesfet protege contre les courants de fuites, sur substrat semi-isolant

Country Status (4)

Country Link
US (1) US4894692A (fr)
JP (1) JPS63302535A (fr)
FR (1) FR2616271B1 (fr)
GB (1) GB2212326B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043788A (en) * 1988-08-26 1991-08-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with functional portions having different operating voltages on one semiconductor substrate
JP2746482B2 (ja) * 1991-02-14 1998-05-06 三菱電機株式会社 電界効果型トランジスタ及びその製造方法
JPH07201885A (ja) * 1993-12-28 1995-08-04 Fujitsu Ltd 半導体装置の製造方法
JP2005166723A (ja) * 2003-11-28 2005-06-23 Toshiba Corp ＭＯＳ（ＭｅｔａｌＯｘｉｄｅＳｅｍｉｃｏｎｄｕｃｔｏｒ）型半導体装置
US8249689B2 (en) * 2007-02-23 2012-08-21 General Electric Company Coil arrangement for electromagnetic tracking method and system

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886583A (en) * 1971-07-01 1975-05-27 Motorola Inc Insulated gate-field-effect transistor
US4028717A (en) * 1975-09-22 1977-06-07 Ibm Corporation Field effect transistor having improved threshold stability
DE2638867A1 (de) * 1976-08-28 1978-03-02 Licentia Gmbh Verfahren zum herstellen eines selbstleitenden mos-feldeffekttransistors
JPS54156484A (en) * 1978-05-30 1979-12-10 Nec Corp Non-volatile semiconductor memory device
JPS55105373A (en) * 1978-12-04 1980-08-12 Mostek Corp Metal oxide semiconductor transistor and method of fabricating same
US4274105A (en) * 1978-12-29 1981-06-16 International Business Machines Corporation MOSFET Substrate sensitivity control
JPS55107255A (en) * 1979-02-12 1980-08-16 Mitsubishi Electric Corp Substrate potential generating circuit device
JPS58148449A (ja) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp 半導体記憶装置
JPS58148452A (ja) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp 半導体記憶装置
JPS58148451A (ja) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp 半導体集積回路
JPS59117168A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 半導体装置
FR2570880A1 (fr) * 1984-09-27 1986-03-28 Rca Corp Procede de fabrication d'un transistor a effet de champ a grille isolee et transistor ainsi obtenu
DE3578271D1 (de) * 1984-11-02 1990-07-19 Toshiba Kawasaki Kk Feldeffekttransistor mit einem schottky-gate und herstellungsverfahren dafuer.
EP0203516B1 (fr) * 1985-05-22 1992-10-07 Hitachi, Ltd. Transistor à effet de champ
JPS62214672A (ja) * 1986-03-17 1987-09-21 Hitachi Ltd 電界効果トランジスタ
JPS62114265A (ja) * 1985-11-13 1987-05-26 Mitsubishi Electric Corp 半導体記憶装置
JPS62141756A (ja) * 1985-12-16 1987-06-25 Mitsubishi Electric Corp 半導体記憶装置
JPS62219671A (ja) * 1986-03-20 1987-09-26 Hitachi Ltd 砒化ガリウム半導体装置
JPH06271278A (ja) * 1993-01-14 1994-09-27 Toda Constr Co Ltd 全天候屋根用ホイスト機構

Also Published As

Publication number Publication date
US4894692A (en) 1990-01-16
GB2212326A (en) 1989-07-19
GB2212326B (en) 1991-01-02
JPS63302535A (ja) 1988-12-09
GB8813042D0 (en) 1988-07-06
FR2616271A1 (fr) 1988-12-09

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