FR2577338B1 - Procede de fabrication d'une memoire dynamique en circuit integre et memoire obtenue par ce procede - Google Patents

Procede de fabrication d'une memoire dynamique en circuit integre et memoire obtenue par ce procede

Info

Publication number
FR2577338B1
FR2577338B1 FR8501974A FR8501974A FR2577338B1 FR 2577338 B1 FR2577338 B1 FR 2577338B1 FR 8501974 A FR8501974 A FR 8501974A FR 8501974 A FR8501974 A FR 8501974A FR 2577338 B1 FR2577338 B1 FR 2577338B1
Authority
FR
France
Prior art keywords
memory
manufacturing
integrated circuit
dynamic memory
dynamic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8501974A
Other languages
English (en)
Other versions
FR2577338A1 (fr
Inventor
Albert Bergemont
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eurotechnique SA
Original Assignee
Eurotechnique SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eurotechnique SA filed Critical Eurotechnique SA
Priority to FR8501974A priority Critical patent/FR2577338B1/fr
Priority to US06/827,731 priority patent/US4888628A/en
Priority to JP61028751A priority patent/JP2754487B2/ja
Publication of FR2577338A1 publication Critical patent/FR2577338A1/fr
Application granted granted Critical
Publication of FR2577338B1 publication Critical patent/FR2577338B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
FR8501974A 1985-02-12 1985-02-12 Procede de fabrication d'une memoire dynamique en circuit integre et memoire obtenue par ce procede Expired FR2577338B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR8501974A FR2577338B1 (fr) 1985-02-12 1985-02-12 Procede de fabrication d'une memoire dynamique en circuit integre et memoire obtenue par ce procede
US06/827,731 US4888628A (en) 1985-02-12 1986-02-10 Dynamic memory in integrated circuit form
JP61028751A JP2754487B2 (ja) 1985-02-12 1986-02-12 集積回路型ダイナミックメモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8501974A FR2577338B1 (fr) 1985-02-12 1985-02-12 Procede de fabrication d'une memoire dynamique en circuit integre et memoire obtenue par ce procede

Publications (2)

Publication Number Publication Date
FR2577338A1 FR2577338A1 (fr) 1986-08-14
FR2577338B1 true FR2577338B1 (fr) 1987-03-06

Family

ID=9316180

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8501974A Expired FR2577338B1 (fr) 1985-02-12 1985-02-12 Procede de fabrication d'une memoire dynamique en circuit integre et memoire obtenue par ce procede

Country Status (3)

Country Link
US (1) US4888628A (fr)
JP (1) JP2754487B2 (fr)
FR (1) FR2577338B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5219781A (en) * 1988-12-08 1993-06-15 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing semiconductor memory device having a stacked type capacitor
JPH02156566A (ja) * 1988-12-08 1990-06-15 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
US5334547A (en) * 1988-12-27 1994-08-02 Nec Corporation Method of manufacturing a semiconductor memory having an increased cell capacitance in a restricted cell area
JP2586182B2 (ja) * 1989-05-31 1997-02-26 日本電気株式会社 半導体メモリセルおよびその製造方法
GB9007492D0 (en) * 1990-04-03 1990-05-30 Pilkington Micro Electronics Semiconductor integrated circuit
JPH05152324A (ja) * 1991-11-26 1993-06-18 Sharp Corp 半導体装置の製造方法
FR2966268B1 (fr) * 2010-10-18 2013-08-16 St Microelectronics Rousset Procédé comprenant une détection d'une remise en boitier d'un circuit intégré après une mise en boitier initiale, et circuit intégré correspondant.

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL176415C (nl) * 1976-07-05 1985-04-01 Hitachi Ltd Halfgeleidergeheugeninrichting omvattende een matrix van halfgeleidergeheugencellen, die bestaan uit een veldeffekttransistor en een opslagcapaciteit.
JPS5323577A (en) * 1976-08-18 1978-03-04 Hitachi Ltd Complementary type insulated gate effect transistor
US4329706A (en) * 1979-03-01 1982-05-11 International Business Machines Corporation Doped polysilicon silicide semiconductor integrated circuit interconnections
JPS5623771A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Semiconductor memory
JPS5667958A (en) * 1979-11-05 1981-06-08 Mitsubishi Electric Corp Semiconductor memory system
JPS57106069A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS57133668A (en) * 1981-02-12 1982-08-18 Nec Corp Semiconductor memory storage
JPS6065545A (ja) * 1983-09-21 1985-04-15 Hitachi Micro Comput Eng Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2754487B2 (ja) 1998-05-20
US4888628A (en) 1989-12-19
FR2577338A1 (fr) 1986-08-14
JPS61229352A (ja) 1986-10-13

Similar Documents

Publication Publication Date Title
FR2618011B1 (fr) Procede de fabrication d'une cellule de memoire
FR2634318B1 (fr) Procede de fabrication d'une cellule de memoire integree
NO174646C (no) Kretskort med integrerte hukommelseskretser
KR860000712A (ko) 반도체 집적회로 및 그 회로 패턴 설계방법
KR860005443A (ko) 반도체 메모리장치 및 그의 제조방법
BE845154A (fr) Procede de fabrication d'un memoire a semiconducteur
FR2599894B1 (fr) Procede de fabrication d'une cathode destinee a equiper un element electrochimique et cathode obtenue par ce procede
FR2684471B1 (fr) Procede de fabrication d'une carte a memoire et carte a memoire ainsi obtenue.
FR2648153B1 (fr) Procede de fabrication d'elements de palier a roulement
FR2626267B1 (fr) Procede de fabrication d'alumine-betaŸi1Ÿ.Ÿi1Ÿ. et alumine-betaŸi1Ÿ.Ÿi1Ÿ. obtenue par ce procede
FR2563523B1 (fr) Compositions de siloxane-imide-diols et procede de fabrication
FR2577338B1 (fr) Procede de fabrication d'une memoire dynamique en circuit integre et memoire obtenue par ce procede
FR2591380B1 (fr) Procede de fabrication et structure de dispositifs de memoire a semiconducteurs.
FR2635916B1 (fr) Support de circuit integre de haute densite et son procede de fabrication
KR900008649A (ko) 집적회로의 다량 제조방법
FR2577339B1 (fr) Memoire dynamique en circuit integre
DE68915603D1 (de) BIC-Speicherzellenstruktur und Herstellungsverfahren dafür.
FR2547440B1 (fr) Procede de fabrication de cartes a memoire et cartes obtenues suivant ce procede
KR850007901A (ko) 집적회로 마이크로프로세서 칩과 그 제조방법
FR2511801B1 (fr) Memoire d'informations et son procede de fabrication
FR2568723B1 (fr) Circuit integre notamment de type mos et son procede de fabrication
FR2624999B1 (fr) Procede de fabrication de cartes a puce
FR2592525B1 (fr) Procede de fabrication d'un transistor lateral integre et circuit integre le comprenant
FR2638021B1 (fr) Memoire eprom de type damier et procede de fabrication
FR2595507B1 (fr) Procede de fabrication d'un element de memoire a semi-conducteurs

Legal Events

Date Code Title Description
D6 Patent endorsed licences of rights
ST Notification of lapse