FR2966268B1 - Procédé comprenant une détection d'une remise en boitier d'un circuit intégré après une mise en boitier initiale, et circuit intégré correspondant. - Google Patents

Procédé comprenant une détection d'une remise en boitier d'un circuit intégré après une mise en boitier initiale, et circuit intégré correspondant.

Info

Publication number
FR2966268B1
FR2966268B1 FR1058474A FR1058474A FR2966268B1 FR 2966268 B1 FR2966268 B1 FR 2966268B1 FR 1058474 A FR1058474 A FR 1058474A FR 1058474 A FR1058474 A FR 1058474A FR 2966268 B1 FR2966268 B1 FR 2966268B1
Authority
FR
France
Prior art keywords
integrated circuit
detection
initial set
semiconductor body
box retrieval
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1058474A
Other languages
English (en)
Other versions
FR2966268A1 (fr
Inventor
Pascal Fornara
Christian Rivero
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1058474A priority Critical patent/FR2966268B1/fr
Priority to US13/243,620 priority patent/US8502383B2/en
Publication of FR2966268A1 publication Critical patent/FR2966268A1/fr
Priority to US13/959,496 priority patent/US9331027B2/en
Application granted granted Critical
Publication of FR2966268B1 publication Critical patent/FR2966268B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H01L23/576—Protection from inspection, reverse engineering or tampering using active circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
FR1058474A 2010-10-18 2010-10-18 Procédé comprenant une détection d'une remise en boitier d'un circuit intégré après une mise en boitier initiale, et circuit intégré correspondant. Active FR2966268B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1058474A FR2966268B1 (fr) 2010-10-18 2010-10-18 Procédé comprenant une détection d'une remise en boitier d'un circuit intégré après une mise en boitier initiale, et circuit intégré correspondant.
US13/243,620 US8502383B2 (en) 2010-10-18 2011-09-23 Integrated circuit including detection circuit to detect electrical energy delivered by a thermoelectric material
US13/959,496 US9331027B2 (en) 2010-10-18 2013-08-05 Method for detecting electrical energy produced from a thermoelectric material contained in an integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1058474A FR2966268B1 (fr) 2010-10-18 2010-10-18 Procédé comprenant une détection d'une remise en boitier d'un circuit intégré après une mise en boitier initiale, et circuit intégré correspondant.

Publications (2)

Publication Number Publication Date
FR2966268A1 FR2966268A1 (fr) 2012-04-20
FR2966268B1 true FR2966268B1 (fr) 2013-08-16

Family

ID=44022971

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1058474A Active FR2966268B1 (fr) 2010-10-18 2010-10-18 Procédé comprenant une détection d'une remise en boitier d'un circuit intégré après une mise en boitier initiale, et circuit intégré correspondant.

Country Status (2)

Country Link
US (2) US8502383B2 (fr)
FR (1) FR2966268B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8779592B2 (en) 2012-05-01 2014-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Via-free interconnect structure with self-aligned metal line interconnections

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2577338B1 (fr) * 1985-02-12 1987-03-06 Eurotechnique Sa Procede de fabrication d'une memoire dynamique en circuit integre et memoire obtenue par ce procede
US5191405A (en) * 1988-12-23 1993-03-02 Matsushita Electric Industrial Co., Ltd. Three-dimensional stacked lsi
US6069312A (en) * 1994-01-28 2000-05-30 California Institute Of Technology Thermoelectric materials with filled skutterudite structure for thermoelectric devices
US5955781A (en) * 1998-01-13 1999-09-21 International Business Machines Corporation Embedded thermal conductors for semiconductor chips
US6188011B1 (en) * 1998-01-20 2001-02-13 Marlow Industries, Inc. Thermoelectric materials fabricated from clathrate compounds and other materials which form an inclusion complex and method for optimizing selected thermoelectric properties
US6316801B1 (en) * 1998-03-04 2001-11-13 Nec Corporation Semiconductor device having capacitive element structure and multilevel interconnection structure and method of fabricating the same
JP3440938B2 (ja) * 1998-12-14 2003-08-25 セイコーエプソン株式会社 電子機器および電子機器の制御方法
JP2002107224A (ja) * 2000-09-29 2002-04-10 Toshiba Corp 赤外線センサ及びその製造方法
US6559538B1 (en) * 2000-10-20 2003-05-06 Bae Systems Information And Electronic Systems Integration Inc. Integrated circuit device having a built-in thermoelectric cooling mechanism
DE10104219B4 (de) * 2001-01-31 2006-05-24 Infineon Technologies Ag Anordnung zur aktiven Kühlung eines Halbleiterbausteins und Verfahren zum Betrieb der Anordnung
US6518661B1 (en) * 2001-04-05 2003-02-11 Advanced Micro Devices, Inc. Apparatus for metal stack thermal management in semiconductor devices
WO2003102510A2 (fr) * 2002-06-04 2003-12-11 Nds Limited Prevention d'intervention non autorisee dans des dispositifs electroniques
US6639242B1 (en) * 2002-07-01 2003-10-28 International Business Machines Corporation Monolithically integrated solid-state SiGe thermoelectric energy converter for high speed and low power circuits
US7406185B2 (en) * 2003-04-16 2008-07-29 Ligh Tuning Technology Inc. Thermoelectric sensor for fingerprint thermal imaging
US7291878B2 (en) * 2003-06-03 2007-11-06 Hitachi Global Storage Technologies Netherlands B.V. Ultra low-cost solid-state memory
US7638705B2 (en) * 2003-12-11 2009-12-29 Nextreme Thermal Solutions, Inc. Thermoelectric generators for solar conversion and related systems and methods
US7589417B2 (en) * 2004-02-12 2009-09-15 Intel Corporation Microelectronic assembly having thermoelectric elements to cool a die and a method of making the same
JP5201780B2 (ja) * 2004-06-14 2013-06-05 ルネサスエレクトロニクス株式会社 光検出器および光検出装置
TWI395321B (zh) * 2005-03-31 2013-05-01 Semiconductor Energy Lab 半導體裝置及其驅動方法
JP2007214285A (ja) * 2006-02-08 2007-08-23 Renesas Technology Corp 半導体装置
US20080277778A1 (en) * 2007-05-10 2008-11-13 Furman Bruce K Layer Transfer Process and Functionally Enhanced Integrated Circuits Products Thereby
US7888794B2 (en) * 2008-02-18 2011-02-15 Infineon Technologies Ag Semiconductor device and method
US8264055B2 (en) * 2008-08-08 2012-09-11 Texas Instruments Incorporated CMOS thermoelectric refrigerator
DE102008049726B4 (de) * 2008-09-30 2012-02-09 Advanced Micro Devices, Inc. Gestapelte Chipkonfiguration mit stromgespeistem Wärmeübertragungssystem und Verfahren zum Steuern der Temperatur in einem Halbleiterbauelement
US8395191B2 (en) * 2009-10-12 2013-03-12 Monolithic 3D Inc. Semiconductor device and structure
FR2946460A1 (fr) * 2009-06-04 2010-12-10 St Microelectronics Rousset Procede de generation d'energie electrique dans un circuit integre lors du fonctionnement de celui-ci, circuit integre correspondant et procede de fabrication
US8461035B1 (en) * 2010-09-30 2013-06-11 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
JP4794693B1 (ja) * 2010-05-27 2011-10-19 パナソニック株式会社 熱電変換デバイス、並びに、放射検出器及びそれを用いた放射検出方法

Also Published As

Publication number Publication date
FR2966268A1 (fr) 2012-04-20
US20130314150A1 (en) 2013-11-28
US9331027B2 (en) 2016-05-03
US8502383B2 (en) 2013-08-06
US20120091553A1 (en) 2012-04-19

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