FR2511801B1 - Memoire d'informations et son procede de fabrication - Google Patents
Memoire d'informations et son procede de fabricationInfo
- Publication number
- FR2511801B1 FR2511801B1 FR8214407A FR8214407A FR2511801B1 FR 2511801 B1 FR2511801 B1 FR 2511801B1 FR 8214407 A FR8214407 A FR 8214407A FR 8214407 A FR8214407 A FR 8214407A FR 2511801 B1 FR2511801 B1 FR 2511801B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- information memory
- memory
- information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8125615 | 1981-08-21 | ||
GB08221791A GB2104287B (en) | 1981-08-21 | 1982-07-26 | Data storage devices |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2511801A1 FR2511801A1 (fr) | 1983-02-25 |
FR2511801B1 true FR2511801B1 (fr) | 1988-09-09 |
Family
ID=26280544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8214407A Expired FR2511801B1 (fr) | 1981-08-21 | 1982-08-20 | Memoire d'informations et son procede de fabrication |
Country Status (4)
Country | Link |
---|---|
US (1) | US4559549A (fr) |
DE (1) | DE3231195A1 (fr) |
FR (1) | FR2511801B1 (fr) |
GB (1) | GB2104287B (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8308309D0 (en) * | 1983-03-25 | 1983-05-05 | Qmc Ind Res | Information holding device |
JPS6223387A (ja) * | 1985-07-19 | 1987-01-31 | Mitsubishi Electric Corp | エレベ−タの制御装置 |
DE3715675A1 (de) * | 1987-05-11 | 1988-12-01 | Messerschmitt Boelkow Blohm | Halbleiterelement |
JP2624878B2 (ja) * | 1990-07-06 | 1997-06-25 | 株式会社東芝 | 半導体装置 |
US5270559A (en) * | 1990-10-15 | 1993-12-14 | California Institute Of Technology | Method and apparatus for making highly accurate potential well adjustments in CCD's |
JPH0883855A (ja) * | 1994-09-13 | 1996-03-26 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置およびその製造方法 |
JPH11186538A (ja) * | 1997-12-24 | 1999-07-09 | Fujitsu Ltd | 単一電子トンネル接合素子を利用した位相同期型回路装置とその製造方法 |
US6642558B1 (en) * | 2000-03-20 | 2003-11-04 | Koninklijke Philips Electronics N.V. | Method and apparatus of terminating a high voltage solid state device |
US20050259368A1 (en) * | 2003-11-12 | 2005-11-24 | Ted Letavic | Method and apparatus of terminating a high voltage solid state device |
US9306034B2 (en) * | 2014-02-24 | 2016-04-05 | Vanguard International Semiconductor Corporation | Method and apparatus for power device with multiple doped regions |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3744036A (en) * | 1971-05-24 | 1973-07-03 | Intel Corp | Electrically programmable read only memory array |
US3966577A (en) * | 1973-08-27 | 1976-06-29 | Trw Inc. | Dielectrically isolated semiconductor devices |
US4087795A (en) * | 1974-09-20 | 1978-05-02 | Siemens Aktiengesellschaft | Memory field effect storage device |
US4079358A (en) * | 1976-10-04 | 1978-03-14 | Micro-Bit Corporation | Buried junction MOS memory capacitor target for electron beam addressable memory and method of using same |
DE2704711C3 (de) * | 1977-02-04 | 1980-12-04 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | CCD-Speicherbaustein |
US4377818A (en) * | 1978-11-02 | 1983-03-22 | Texas Instruments Incorporated | High density electrically programmable ROM |
US4285000A (en) * | 1979-03-12 | 1981-08-18 | Rockwell International Corporation | Buried channel charge coupled device with semi-insulating substrate |
JPS55156371A (en) * | 1979-05-24 | 1980-12-05 | Toshiba Corp | Non-volatile semiconductor memory device |
US4257056A (en) * | 1979-06-27 | 1981-03-17 | National Semiconductor Corporation | Electrically erasable read only memory |
US4211582A (en) * | 1979-06-28 | 1980-07-08 | International Business Machines Corporation | Process for making large area isolation trenches utilizing a two-step selective etching technique |
US4443064A (en) * | 1979-11-30 | 1984-04-17 | Hughes Aircraft Company | High resolution AC silicon MOS-light-valve substrate |
-
1982
- 1982-07-26 GB GB08221791A patent/GB2104287B/en not_active Expired
- 1982-08-18 US US06/409,128 patent/US4559549A/en not_active Expired - Fee Related
- 1982-08-20 FR FR8214407A patent/FR2511801B1/fr not_active Expired
- 1982-08-21 DE DE19823231195 patent/DE3231195A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2104287B (en) | 1985-02-20 |
DE3231195A1 (de) | 1983-03-03 |
GB2104287A (en) | 1983-03-02 |
FR2511801A1 (fr) | 1983-02-25 |
US4559549A (en) | 1985-12-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |