DE68915603D1 - BIC-Speicherzellenstruktur und Herstellungsverfahren dafür. - Google Patents

BIC-Speicherzellenstruktur und Herstellungsverfahren dafür.

Info

Publication number
DE68915603D1
DE68915603D1 DE68915603T DE68915603T DE68915603D1 DE 68915603 D1 DE68915603 D1 DE 68915603D1 DE 68915603 T DE68915603 T DE 68915603T DE 68915603 T DE68915603 T DE 68915603T DE 68915603 D1 DE68915603 D1 DE 68915603D1
Authority
DE
Germany
Prior art keywords
manufacturing
memory cell
cell structure
method therefor
bic memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68915603T
Other languages
English (en)
Other versions
DE68915603T2 (de
Inventor
Noriaki Sato
Kazunori Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63082746A external-priority patent/JPH01253959A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE68915603D1 publication Critical patent/DE68915603D1/de
Application granted granted Critical
Publication of DE68915603T2 publication Critical patent/DE68915603T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
DE68915603T 1988-04-04 1989-04-03 BIC-Speicherzellenstruktur und Herstellungsverfahren dafür. Expired - Fee Related DE68915603T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63082746A JPH01253959A (ja) 1988-04-04 1988-04-04 半導体装置の製造方法
JP8274788 1988-04-04

Publications (2)

Publication Number Publication Date
DE68915603D1 true DE68915603D1 (de) 1994-07-07
DE68915603T2 DE68915603T2 (de) 1994-09-15

Family

ID=26423762

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68915603T Expired - Fee Related DE68915603T2 (de) 1988-04-04 1989-04-03 BIC-Speicherzellenstruktur und Herstellungsverfahren dafür.

Country Status (5)

Country Link
US (1) US5075249A (de)
EP (1) EP0336679B1 (de)
JP (1) JP2506183B2 (de)
KR (1) KR920005323B1 (de)
DE (1) DE68915603T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234853A (en) * 1990-03-05 1993-08-10 Fujitsu Limited Method of producing a high voltage MOS transistor
US5404029A (en) * 1990-04-12 1995-04-04 Actel Corporation Electrically programmable antifuse element
EP0509631A1 (de) * 1991-04-18 1992-10-21 Actel Corporation Antischmelzsicherungen mit minimalischen Oberflächen
EP0510604A3 (de) * 1991-04-23 2001-05-09 Canon Kabushiki Kaisha Halbleiteranordnung und Verfahren zu ihrer Herstellung
US5581111A (en) * 1993-07-07 1996-12-03 Actel Corporation Dielectric-polysilicon-dielectric antifuse for field programmable logic applications
TW287313B (de) * 1995-02-20 1996-10-01 Matsushita Electric Ind Co Ltd
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
US5968851A (en) * 1997-03-19 1999-10-19 Cypress Semiconductor Corp. Controlled isotropic etch process and method of forming an opening in a dielectric layer
US6700151B2 (en) * 2001-10-17 2004-03-02 Kilopass Technologies, Inc. Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric
US10090360B2 (en) * 2015-02-13 2018-10-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor structure including a plurality of trenches
CN108470676A (zh) * 2018-04-04 2018-08-31 睿力集成电路有限公司 击穿式电熔丝结构及其形成方法、半导体器件

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969150A (en) * 1973-12-03 1976-07-13 Fairchild Camera And Instrument Corporation Method of MOS transistor manufacture
US4288256A (en) * 1977-12-23 1981-09-08 International Business Machines Corporation Method of making FET containing stacked gates
US4282647A (en) * 1978-04-04 1981-08-11 Standard Microsystems Corporation Method of fabricating high density refractory metal gate MOS integrated circuits utilizing the gate as a selective diffusion and oxidation mask
US4442591A (en) * 1982-02-01 1984-04-17 Texas Instruments Incorporated High-voltage CMOS process
US4453325A (en) * 1982-06-24 1984-06-12 Ofsowitz Warwick N Advertising display means for parking meter and the like
US4388147A (en) * 1982-08-16 1983-06-14 Intel Corporation Method for steam leaching phosphorus from phosphosilicate glass during semiconductor fabrication
US4498224A (en) * 1982-12-23 1985-02-12 Tokyo Shibaura Denki Kabushiki Kaisha Method of manufacturing a MOSFET using accelerated ions to form an amorphous region
JPH0693494B2 (ja) * 1984-03-16 1994-11-16 株式会社日立製作所 半導体集積回路装置の製造方法
JPH073855B2 (ja) * 1985-07-26 1995-01-18 富士通株式会社 半導体装置の製造方法
JPS62128557A (ja) * 1985-11-29 1987-06-10 Fujitsu Ltd 半導体記憶装置とその書込み方法
JPS62128556A (ja) * 1985-11-29 1987-06-10 Fujitsu Ltd 半導体装置
JPS62130525A (ja) * 1985-11-30 1987-06-12 Fujitsu Ltd 半導体集積回路の製法
JPS62130559A (ja) * 1985-11-30 1987-06-12 Fujitsu Ltd 集積回路素子の製法

Also Published As

Publication number Publication date
KR890016676A (ko) 1989-11-29
US5075249A (en) 1991-12-24
EP0336679B1 (de) 1994-06-01
EP0336679A2 (de) 1989-10-11
DE68915603T2 (de) 1994-09-15
JPH02153566A (ja) 1990-06-13
JP2506183B2 (ja) 1996-06-12
EP0336679A3 (de) 1991-09-25
KR920005323B1 (ko) 1992-07-02

Similar Documents

Publication Publication Date Title
DE3882557D1 (de) Dram-zelle und herstellungsverfahren.
KR880701632A (ko) 다면체 셀 구조 및 그 제조방법
DE3880750D1 (de) Vertikale transistor-/kapazitaetspeicherzellen-struktur und herstellungsverfahren dafuer.
DE69434943D1 (de) Solarzellenanordnung und herstellungsverfahren
KR930701838A (ko) 태양전지와 그 제조방법
DE68920699D1 (de) Speicherzelle und Leseschaltung.
DE68923061D1 (de) Sonnenzelle.
DE3885185D1 (de) Vertikal-Trench-Transistor-/Kapazitätsspeicherzellen-Struktur und Herstellungsverfahren dafür.
DE3584656D1 (de) Mikrocomputerspeicher und dessen betriebsverfahren.
NO912321L (no) Stamcellefaktor.
NO893805D0 (no) Brenselcelle.
KR890015430A (ko) 캐패시터 및 그 제조방법
NO893484D0 (no) Brenselcelle.
DE68917428D1 (de) Sonnenzelle und ihr Herstellungsverfahren.
DE3672762D1 (de) Dosendeckelstruktur und herstellungsverfahren dazu.
DE58900841D1 (de) Mikrodurchflusszelle.
NO912228D0 (no) Fremstilling og anvendelse av porfyriner.
DE68915603D1 (de) BIC-Speicherzellenstruktur und Herstellungsverfahren dafür.
DE3851402D1 (de) Integrierte sonnenzelle und herstellungsverfahren.
DE3585731D1 (de) Dram-zelle und verfahren.
FI891201A (fi) Elektrokemisk cell.
FI893497A0 (fi) Elektrokemisk cell med dubbelverkande elektrod.
NL192550B (nl) Brandstofcel.
DE68910905D1 (de) Sonnenzelle.
DE3854005D1 (de) Speicherzelle.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee