FR2505102B1 - Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree - Google Patents

Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree

Info

Publication number
FR2505102B1
FR2505102B1 FR8108550A FR8108550A FR2505102B1 FR 2505102 B1 FR2505102 B1 FR 2505102B1 FR 8108550 A FR8108550 A FR 8108550A FR 8108550 A FR8108550 A FR 8108550A FR 2505102 B1 FR2505102 B1 FR 2505102B1
Authority
FR
France
Prior art keywords
implementation
field effect
semiconductor structure
integrated semiconductor
amplifier formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8108550A
Other languages
English (en)
Other versions
FR2505102A1 (fr
Inventor
Bernard Roger
Bernard Vertongen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR8108550A priority Critical patent/FR2505102B1/fr
Priority to US06/360,291 priority patent/US4547791A/en
Priority to DE19823214893 priority patent/DE3214893A1/de
Priority to JP57070169A priority patent/JPS57183067A/ja
Priority to GB8211994A priority patent/GB2097585B/en
Publication of FR2505102A1 publication Critical patent/FR2505102A1/fr
Application granted granted Critical
Publication of FR2505102B1 publication Critical patent/FR2505102B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR8108550A 1981-04-29 1981-04-29 Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree Expired FR2505102B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR8108550A FR2505102B1 (fr) 1981-04-29 1981-04-29 Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree
US06/360,291 US4547791A (en) 1981-04-29 1982-03-22 CMOS-Bipolar Darlington device
DE19823214893 DE3214893A1 (de) 1981-04-29 1982-04-22 Halbleiteranordnung
JP57070169A JPS57183067A (en) 1981-04-29 1982-04-26 Semiconductor device
GB8211994A GB2097585B (en) 1981-04-29 1982-04-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8108550A FR2505102B1 (fr) 1981-04-29 1981-04-29 Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree

Publications (2)

Publication Number Publication Date
FR2505102A1 FR2505102A1 (fr) 1982-11-05
FR2505102B1 true FR2505102B1 (fr) 1986-01-24

Family

ID=9257908

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8108550A Expired FR2505102B1 (fr) 1981-04-29 1981-04-29 Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree

Country Status (5)

Country Link
US (1) US4547791A (fr)
JP (1) JPS57183067A (fr)
DE (1) DE3214893A1 (fr)
FR (1) FR2505102B1 (fr)
GB (1) GB2097585B (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5014102A (en) * 1982-04-01 1991-05-07 General Electric Company MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
US5333282A (en) * 1982-09-29 1994-07-26 Hitachi, Ltd. Semiconductor integrated circuit device with at least one bipolar transistor arranged to provide a direct connection between a plurality of MOSFETs
DE3380105D1 (en) * 1982-09-29 1989-07-27 Hitachi Ltd Semiconductor integrated circuit device
JPS5994452A (ja) * 1982-11-22 1984-05-31 Fuji Electric Co Ltd 複合形トランジスタ
DE3301648A1 (de) * 1983-01-19 1984-07-19 Siemens AG, 1000 Berlin und 8000 München Misfet mit eingangsverstaerker
US4783694A (en) * 1984-03-16 1988-11-08 Motorola Inc. Integrated bipolar-MOS semiconductor device with common collector and drain
JPS6174362A (ja) * 1984-09-19 1986-04-16 Hitachi Ltd 半導体装置
GB2164790A (en) * 1984-09-19 1986-03-26 Philips Electronic Associated Merged bipolar and field effect transistors
DE3689680T2 (de) * 1985-09-30 1994-06-23 Toshiba Kawasaki Kk Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren.
JPH0654796B2 (ja) * 1986-07-14 1994-07-20 株式会社日立製作所 複合半導体装置
US4727046A (en) * 1986-07-16 1988-02-23 Fairchild Semiconductor Corporation Method of fabricating high performance BiCMOS structures having poly emitters and silicided bases
FR2712428B1 (fr) * 1993-11-10 1996-02-09 Sgs Thomson Microelectronics Commutateur bidirectionnel à commande en tension.
JP2759624B2 (ja) * 1995-04-19 1998-05-28 エルジイ・セミコン・カンパニイ・リミテッド 半導体素子の構造及びその製造方法
US5763915A (en) * 1996-02-27 1998-06-09 Magemos Corporation DMOS transistors having trenched gate oxide
US6242967B1 (en) 1998-06-15 2001-06-05 Fuji Electric Co., Ltd. Low on resistance high speed off switching device having unipolar transistors
JP2001085463A (ja) * 1999-09-09 2001-03-30 Rohm Co Ltd 半導体チップおよびそれを用いた半導体装置
US6774439B2 (en) * 2000-02-17 2004-08-10 Kabushiki Kaisha Toshiba Semiconductor device using fuse/anti-fuse system
DE10110458A1 (de) * 2001-03-05 2002-10-17 Kord Gharachorloo Wahid Der CMOS-Inverter im LAVE-Technologie (lateral vertikal)
CN100422753C (zh) * 2005-08-12 2008-10-01 上海三基电子工业有限公司 一种用于车载电子干扰模拟器的直流功率放大器
AU2007221150B2 (en) * 2006-02-27 2012-09-20 Ahm Technologies, Inc. Eustachian tube device and method
US8742490B2 (en) * 2011-05-02 2014-06-03 Monolithic Power Systems, Inc. Vertical power transistor die packages and associated methods of manufacturing

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1559610A (fr) * 1967-06-30 1969-03-14
JPS4836975B1 (fr) * 1967-12-06 1973-11-08
US3609470A (en) * 1968-02-19 1971-09-28 Ibm Semiconductor devices with lines and electrodes which contain 2 to 3 percent silicon with the remainder aluminum
GB1518961A (en) * 1975-02-24 1978-07-26 Rca Corp Amplifier circuits
FR2311452A1 (fr) * 1975-05-16 1976-12-10 Thomson Csf Dispositif a semi-conducteur pour commutation rapide de puissance et appareil comportant un tel dispositif
DE2610122C3 (de) * 1976-03-11 1978-11-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Dreipolige Halbleiteranordnung
JPS5455178A (en) * 1977-10-12 1979-05-02 Hitachi Ltd Protecting device
FR2422258A1 (fr) * 1978-01-19 1979-11-02 Radiotechnique Compelec Dispositif semiconducteur monolithique a transistors de types mos et bipolaire
FR2449333A1 (fr) * 1979-02-14 1980-09-12 Radiotechnique Compelec Perfectionnement aux dispositifs semi-conducteurs de type darlington
US4329705A (en) * 1979-05-21 1982-05-11 Exxon Research & Engineering Co. VMOS/Bipolar power switching device
US4286175A (en) * 1979-05-21 1981-08-25 Exxon Research & Engineering Co. VMOS/Bipolar dual-triggered switch
US4356416A (en) * 1980-07-17 1982-10-26 General Electric Company Voltage controlled non-saturating semiconductor switch and voltage converter circuit employing same

Also Published As

Publication number Publication date
JPS57183067A (en) 1982-11-11
GB2097585A (en) 1982-11-03
FR2505102A1 (fr) 1982-11-05
GB2097585B (en) 1985-02-13
DE3214893A1 (de) 1982-11-18
JPH0230588B2 (fr) 1990-07-06
US4547791A (en) 1985-10-15

Similar Documents

Publication Publication Date Title
FR2505102B1 (fr) Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree
DE3576883D1 (de) Silizium-auf-isolator-transistor.
DE3382717D1 (de) Torschaltung mit Feldeffekt- und Bipolartransistoren.
DE3578314D1 (de) Ballschlaggeraet.
DE3679971D1 (de) Modulationsdotierter feldeffekttransistor.
DE68921368D1 (de) Gate-Abschalthalbleitereinrichtung.
DE3584799D1 (de) Halbleitervorrichtung.
KR860006138A (ko) 헤테로 접합 전계 효과 트랜지스터
KR880007583A (ko) 공액 디엔계 공중합체 및 그의 제조방법과 공액 디엔계 공중합체를 사용한 감광성 수지 조성물
DE69429127D1 (de) Heteroübergang-Bipolartransistor
DE3581370D1 (de) Halbleitervorrichtung.
DE3587592D1 (de) Halbleiterspeicheranordnung mit Leseverstärkern.
IT8519191A0 (it) Dispositivo di montaggio e di connessione per semi-conduttori di potenza.
DE3676259D1 (de) Geschuetzte mos-transistorschaltung.
DE3367702D1 (en) High speed field-effect transistor employing heterojunction
KR890700270A (ko) 헤테로 접합 바이폴라 트랜지스터
EP0180255A3 (en) Semiconductor device comprising a bipolar transistor and an insulated-gate fet
DE69117866D1 (de) Heteroübergangsfeldeffekttransistor
DE3586568D1 (de) Halbleitereinrichtung.
EP0646929A3 (fr) Dispositif de circuit intégré à semi-conducteurs bipolaires et par des transistors à effet de champs et comprenant un amplificateur de détection stable.
DE69114554D1 (de) Halbleiteranordnung des Harzverkapselungstyps.
DE3687494D1 (de) Signalverarbeitungsanordnung mit einem feldeffekttransistor und bipolaren transistoren.
DE3673509D1 (de) Feldeffekttransistorverstaerkerschaltungen.
FR2626407B1 (fr) Transistor a effet de champ a heterojonction
FR2507409B1 (fr) Circuit hyperfrequence, notamment amplificateur a transistor a effet de champ

Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse