DE3587592D1 - Halbleiterspeicheranordnung mit Leseverstärkern. - Google Patents
Halbleiterspeicheranordnung mit Leseverstärkern.Info
- Publication number
- DE3587592D1 DE3587592D1 DE85307960T DE3587592T DE3587592D1 DE 3587592 D1 DE3587592 D1 DE 3587592D1 DE 85307960 T DE85307960 T DE 85307960T DE 3587592 T DE3587592 T DE 3587592T DE 3587592 D1 DE3587592 D1 DE 3587592D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- sense amplifiers
- amplifiers
- sense
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59263301A JPS61142591A (ja) | 1984-12-13 | 1984-12-13 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3587592D1 true DE3587592D1 (de) | 1993-10-28 |
DE3587592T2 DE3587592T2 (de) | 1994-02-03 |
Family
ID=17387571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE85307960T Expired - Lifetime DE3587592T2 (de) | 1984-12-13 | 1985-11-01 | Halbleiterspeicheranordnung mit Leseverstärkern. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4748596A (de) |
EP (1) | EP0185451B1 (de) |
JP (1) | JPS61142591A (de) |
KR (1) | KR900000050B1 (de) |
DE (1) | DE3587592T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5587952A (en) * | 1984-12-17 | 1996-12-24 | Hitachi, Ltd. | Dynamic random access memory including read preamplifiers activated before rewrite amplifiers |
US5132930A (en) * | 1986-07-31 | 1992-07-21 | Mitsubishi Denki Kabushiki Kaisha | CMOS dynamic memory device having multiple flip-flop circuits selectively coupled to form sense amplifiers specific to neighboring data bit lines |
FR2603414B1 (fr) * | 1986-08-29 | 1988-10-28 | Bull Sa | Amplificateur de lecture |
JPH0713851B2 (ja) * | 1987-03-24 | 1995-02-15 | 三菱電機株式会社 | 半導体記憶装置 |
US5214601A (en) * | 1986-12-11 | 1993-05-25 | Mitsubishi Denki Kabushiki Kaisha | Bit line structure for semiconductor memory device including cross-points and multiple interconnect layers |
US4807195A (en) * | 1987-05-18 | 1989-02-21 | International Business Machines Corporation | Apparatus and method for providing a dual sense amplifier with divided bit line isolation |
JPH01130392A (ja) * | 1987-11-17 | 1989-05-23 | Mitsubishi Electric Corp | ダイナミック型ランダムアクセスメモリ装置 |
JPH01133286A (ja) * | 1987-11-17 | 1989-05-25 | Mitsubishi Electric Corp | ダイナミツクram |
JPH0758592B2 (ja) * | 1987-11-30 | 1995-06-21 | 日本電気株式会社 | 半導体メモリ |
JP2666943B2 (ja) * | 1988-01-27 | 1997-10-22 | 株式会社東芝 | 半導体記憶装置 |
KR910002203B1 (ko) * | 1988-03-17 | 1991-04-06 | 삼성전자 주식회사 | 메모리 소자의 센싱 검출 회로 |
US5293338A (en) * | 1990-02-22 | 1994-03-08 | Sharp Kabushiki Kaisha | Peripheral circuit in a dynamic semiconductor memory device enabling a time-saving and energy-saving data readout |
JP3101298B2 (ja) * | 1990-03-30 | 2000-10-23 | 株式会社東芝 | 半導体メモリ装置 |
JP2611504B2 (ja) * | 1990-06-15 | 1997-05-21 | 日本電気株式会社 | 半導体メモリ |
US5226014A (en) * | 1990-12-24 | 1993-07-06 | Ncr Corporation | Low power pseudo-static ROM |
US5475642A (en) * | 1992-06-23 | 1995-12-12 | Taylor; David L. | Dynamic random access memory with bit line preamp/driver |
US5325336A (en) * | 1992-09-10 | 1994-06-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device having power line arranged in a meshed shape |
JPH09251782A (ja) * | 1996-03-14 | 1997-09-22 | Fujitsu Ltd | 半導体記憶装置 |
US6677199B1 (en) * | 2002-07-02 | 2004-01-13 | Macronix International Co., Ltd. | Structure for preventing salicide bridging and method thereof |
US6826094B1 (en) * | 2003-06-02 | 2004-11-30 | Hewlett-Packard Development Company, L.P. | Magnetic memory cell sensing with first and second currents |
US7257042B2 (en) * | 2006-01-12 | 2007-08-14 | International Business Machines Corporation | Enhanced sensing in a hierarchical memory architecture |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1486772A (en) * | 1973-07-30 | 1977-09-21 | Indep Broadcasting Authority | Television systems |
US4039861A (en) * | 1976-02-09 | 1977-08-02 | International Business Machines Corporation | Cross-coupled charge transfer sense amplifier circuits |
JPS5938670B2 (ja) * | 1976-10-15 | 1984-09-18 | 日本電気株式会社 | 差信号増巾回路 |
JPS6041463B2 (ja) * | 1976-11-19 | 1985-09-17 | 株式会社日立製作所 | ダイナミツク記憶装置 |
US4286178A (en) * | 1978-06-12 | 1981-08-25 | Texas Instruments Incorporated | Sense amplifier with dual parallel driver transistors in MOS random access memory |
US4298867A (en) * | 1979-07-06 | 1981-11-03 | System Concepts, Inc. | Cathode ray tube character smoother |
US4331955A (en) * | 1980-08-07 | 1982-05-25 | Eltra Corporation | Method and apparatus for smoothing outlines |
JPS5748207A (en) * | 1980-09-05 | 1982-03-19 | Toshiba Corp | Superconductive electromagnet |
SE423758B (sv) * | 1980-09-29 | 1982-05-24 | Asea Ab | Styrenhet for ett presentationsorgan |
US4386349A (en) * | 1981-04-28 | 1983-05-31 | Sperry Corporation | High resolution graphics smoothing |
JPS57186289A (en) * | 1981-05-13 | 1982-11-16 | Hitachi Ltd | Semiconductor memory |
US4506351A (en) * | 1982-06-23 | 1985-03-19 | International Business Machines Corporation | One-device random access memory having enhanced sense signal |
JPS5912485A (ja) * | 1982-07-13 | 1984-01-23 | 神鋼電機株式会社 | 文字の拡大補間方法 |
US4551641A (en) * | 1983-11-23 | 1985-11-05 | Motorola, Inc. | Sense amplifier |
JPS61500573A (ja) * | 1983-12-02 | 1986-03-27 | アメリカン テレフオン アンド テレグラフ カムパニ− | 半導体メモリ |
-
1984
- 1984-12-13 JP JP59263301A patent/JPS61142591A/ja active Granted
-
1985
- 1985-06-14 KR KR1019850004220A patent/KR900000050B1/ko not_active IP Right Cessation
- 1985-10-28 US US06/792,197 patent/US4748596A/en not_active Expired - Lifetime
- 1985-11-01 EP EP85307960A patent/EP0185451B1/de not_active Expired - Lifetime
- 1985-11-01 DE DE85307960T patent/DE3587592T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0587915B2 (de) | 1993-12-20 |
EP0185451A2 (de) | 1986-06-25 |
KR860005369A (ko) | 1986-07-21 |
EP0185451A3 (en) | 1988-12-07 |
EP0185451B1 (de) | 1993-09-22 |
JPS61142591A (ja) | 1986-06-30 |
KR900000050B1 (ko) | 1990-01-18 |
DE3587592T2 (de) | 1994-02-03 |
US4748596A (en) | 1988-05-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |