FR2471046B1 - Procede de formation d'une pellicule isolante sur un dispositif semi-conducteur, et dispositif ainsi obtenu, notamment transistor a effet de champ - Google Patents

Procede de formation d'une pellicule isolante sur un dispositif semi-conducteur, et dispositif ainsi obtenu, notamment transistor a effet de champ

Info

Publication number
FR2471046B1
FR2471046B1 FR8025339A FR8025339A FR2471046B1 FR 2471046 B1 FR2471046 B1 FR 2471046B1 FR 8025339 A FR8025339 A FR 8025339A FR 8025339 A FR8025339 A FR 8025339A FR 2471046 B1 FR2471046 B1 FR 2471046B1
Authority
FR
France
Prior art keywords
forming
insulating film
effect transistor
field
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8025339A
Other languages
English (en)
Other versions
FR2471046A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of FR2471046A1 publication Critical patent/FR2471046A1/fr
Application granted granted Critical
Publication of FR2471046B1 publication Critical patent/FR2471046B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
FR8025339A 1979-11-28 1980-11-28 Procede de formation d'une pellicule isolante sur un dispositif semi-conducteur, et dispositif ainsi obtenu, notamment transistor a effet de champ Expired FR2471046B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15403879A JPS5676538A (en) 1979-11-28 1979-11-28 Formation of insulating film on semiconductor substrate

Publications (2)

Publication Number Publication Date
FR2471046A1 FR2471046A1 (fr) 1981-06-12
FR2471046B1 true FR2471046B1 (fr) 1985-10-25

Family

ID=15575550

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8025339A Expired FR2471046B1 (fr) 1979-11-28 1980-11-28 Procede de formation d'une pellicule isolante sur un dispositif semi-conducteur, et dispositif ainsi obtenu, notamment transistor a effet de champ

Country Status (4)

Country Link
JP (1) JPS5676538A (fr)
DE (1) DE3044958C2 (fr)
FR (1) FR2471046B1 (fr)
GB (1) GB2064218B (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021530A (ja) * 1983-07-16 1985-02-02 New Japan Radio Co Ltd 化合物半導体における酸化被膜
GB2268327A (en) * 1992-06-30 1994-01-05 Texas Instruments Ltd Passivated gallium arsenide device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE635971A (fr) * 1962-08-09
US3514348A (en) * 1967-05-10 1970-05-26 Ncr Co Method for making semiconductor devices
US3832202A (en) * 1972-08-08 1974-08-27 Motorola Inc Liquid silica source for semiconductors liquid silica source for semiconductors
JPS49107176A (fr) * 1973-02-13 1974-10-11
DE2506457C3 (de) * 1975-02-15 1980-01-24 S.A. Metallurgie Hoboken-Overpelt N.V., Bruessel Verfahren zur Herstellung einer silikatischen Abdeckschicht auf einer Halbleiterscheibe öder auf einer auf ihr befindlichen Schicht
DE2944180A1 (de) * 1979-11-02 1981-05-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen einer einen halbleiterkoerper einseitig bedeckenden isolierschicht

Also Published As

Publication number Publication date
GB2064218B (en) 1984-04-18
DE3044958A1 (de) 1981-09-17
DE3044958C2 (de) 1983-08-18
FR2471046A1 (fr) 1981-06-12
JPS5676538A (en) 1981-06-24
GB2064218A (en) 1981-06-10

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Legal Events

Date Code Title Description
ST Notification of lapse