GB2064218B - Method of forming an insulating film on a semiconductor device - Google Patents
Method of forming an insulating film on a semiconductor deviceInfo
- Publication number
- GB2064218B GB2064218B GB8037986A GB8037986A GB2064218B GB 2064218 B GB2064218 B GB 2064218B GB 8037986 A GB8037986 A GB 8037986A GB 8037986 A GB8037986 A GB 8037986A GB 2064218 B GB2064218 B GB 2064218B
- Authority
- GB
- United Kingdom
- Prior art keywords
- forming
- semiconductor device
- insulating film
- insulating
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15403879A JPS5676538A (en) | 1979-11-28 | 1979-11-28 | Formation of insulating film on semiconductor substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2064218A GB2064218A (en) | 1981-06-10 |
| GB2064218B true GB2064218B (en) | 1984-04-18 |
Family
ID=15575550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8037986A Expired GB2064218B (en) | 1979-11-28 | 1980-11-27 | Method of forming an insulating film on a semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5676538A (en) |
| DE (1) | DE3044958C2 (en) |
| FR (1) | FR2471046B1 (en) |
| GB (1) | GB2064218B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6021530A (en) * | 1983-07-16 | 1985-02-02 | New Japan Radio Co Ltd | Oxide film in compound semiconductor |
| GB2268327A (en) * | 1992-06-30 | 1994-01-05 | Texas Instruments Ltd | Passivated gallium arsenide device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE635971A (en) * | 1962-08-09 | |||
| US3514348A (en) * | 1967-05-10 | 1970-05-26 | Ncr Co | Method for making semiconductor devices |
| US3832202A (en) * | 1972-08-08 | 1974-08-27 | Motorola Inc | Liquid silica source for semiconductors liquid silica source for semiconductors |
| JPS49107176A (en) * | 1973-02-13 | 1974-10-11 | ||
| DE2506457C3 (en) * | 1975-02-15 | 1980-01-24 | S.A. Metallurgie Hoboken-Overpelt N.V., Bruessel | Process for the production of a silicate covering layer on a semiconductor wafer or on a layer thereon |
| DE2944180A1 (en) * | 1979-11-02 | 1981-05-07 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | METHOD FOR PRODUCING AN INSULATION LAYER COVERING A SEMICONDUCTOR BODY ON ONE SIDE |
-
1979
- 1979-11-28 JP JP15403879A patent/JPS5676538A/en active Pending
-
1980
- 1980-11-27 GB GB8037986A patent/GB2064218B/en not_active Expired
- 1980-11-28 FR FR8025339A patent/FR2471046B1/en not_active Expired
- 1980-11-28 DE DE3044958A patent/DE3044958C2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2471046B1 (en) | 1985-10-25 |
| DE3044958A1 (en) | 1981-09-17 |
| DE3044958C2 (en) | 1983-08-18 |
| FR2471046A1 (en) | 1981-06-12 |
| JPS5676538A (en) | 1981-06-24 |
| GB2064218A (en) | 1981-06-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4352724B1 (en) | Method of manufacturing a semiconductor device | |
| DE3071589D1 (en) | Method for forming an insulating film on a semiconductor substrate surface | |
| DE3277481D1 (en) | Method of forming a single-crystal semiconductor film on an amorphous insulator | |
| DE3175992D1 (en) | Method of manufacturing a semiconductor device comprising an insulating film for component isolation | |
| DE3377958D1 (en) | Method of manufacturing a semiconductor device including burying an insulating film | |
| EP0072603A3 (en) | Semiconductor device having insulating film and process for producing the same | |
| AU508451B2 (en) | Method of manufacturing a semiconductor device | |
| DE3275884D1 (en) | A method for forming monocrystalline semiconductor film on insulating film | |
| DE3068823D1 (en) | A method of fabricating a semiconductor integrated circuit device | |
| GB1548520A (en) | Method of manufacturing a semiconductor device | |
| JPS5650563A (en) | Method of manufacturing semiconductor device | |
| JPS564268A (en) | Method of forming semiconductor device | |
| GB2035687B (en) | Method of forming layers on a semiconductor device | |
| JPS5567135A (en) | Method of forming metallic film of semiconductor device | |
| DE3177102D1 (en) | Method for forming the insulating layer of a semiconductor device | |
| JPS52114276A (en) | Method of manufacturing semiconductor device | |
| DE3063768D1 (en) | A method of manufacturing a semiconductor device | |
| AU504549B2 (en) | Method of manufacturing alight-emissive semiconductor device | |
| DE3071906D1 (en) | A method of manufacturing a semiconductor device | |
| DE3067007D1 (en) | Method of manufacturing a semiconductor device | |
| EP0154670A3 (en) | Semiconductor device having insulating film and process for producing the same | |
| JPS55160425A (en) | Method of manufacturing multiistage semiconductor device | |
| JPS55134981A (en) | Method of manufacturing semiconductor device | |
| GB2064218B (en) | Method of forming an insulating film on a semiconductor device | |
| DE3063971D1 (en) | A method of manufacturing a semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19961127 |