FR2440079A1 - Element a transfert de charges perfectionne - Google Patents

Element a transfert de charges perfectionne

Info

Publication number
FR2440079A1
FR2440079A1 FR7926163A FR7926163A FR2440079A1 FR 2440079 A1 FR2440079 A1 FR 2440079A1 FR 7926163 A FR7926163 A FR 7926163A FR 7926163 A FR7926163 A FR 7926163A FR 2440079 A1 FR2440079 A1 FR 2440079A1
Authority
FR
France
Prior art keywords
charge
channel region
region
conductivity
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7926163A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2440079A1 publication Critical patent/FR2440079A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

UN CIRCUIT A COUPLAGE DE CHARGES QUI COMPORTE UNE PARTIE SORTIE AYANT UN TRANSISTOR A EFFET DE CHAMP 120 DISPOSE DANS LE CANAL A PUITS DE POTENTIEL 101 POUR DELIVRER UNE LECTURE POUR SORTIE NON DESTRUCTIVE DE LA VALEUR ANALOGIQUE D'UN PAQUET DE CHARGES SITUE DANS LA PARTIE D'UN TEL CANAL A PUITS DE POTENTIEL SITUEE SOUS LE TRANSISTOR. LES ZONES DE DRAIN 133, DE SOURCE 134 ET DE CANAL DU TRANSISTOR SONT DISPOSEES TRANSVERSALEMENT AU COURANT DES PAQUETS DE CHARGE. LA CONDUCTIVITE DU CANAL EST MODULEE EN FONCTION DE LA VALEUR D'UN PAQUET DE CHARGES DANS LE PUITS DE POTENTIEL SITUE SOUS LE TRANSISTOR.
FR7926163A 1978-10-23 1979-10-22 Element a transfert de charges perfectionne Withdrawn FR2440079A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US95380878A 1978-10-03 1978-10-03

Publications (1)

Publication Number Publication Date
FR2440079A1 true FR2440079A1 (fr) 1980-05-23

Family

ID=25494554

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7926163A Withdrawn FR2440079A1 (fr) 1978-10-23 1979-10-22 Element a transfert de charges perfectionne

Country Status (3)

Country Link
JP (1) JPS5559771A (fr)
DE (1) DE2942827A1 (fr)
FR (1) FR2440079A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988007766A1 (fr) * 1987-03-23 1988-10-06 Eastman Kodak Company Architecture d'electrometre ccd

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0831595B2 (ja) * 1988-01-08 1996-03-27 日本電気株式会社 電荷転送素子

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2204013A1 (fr) * 1972-10-20 1974-05-17 Westinghouse Electric Corp
US4035667A (en) * 1975-12-02 1977-07-12 International Business Machines Corporation Input circuit for inserting charge packets into a charge-transfer-device
DE2654316A1 (de) * 1976-11-30 1978-06-01 Siemens Ag Halbleitervorrichtung
US4118795A (en) * 1976-08-27 1978-10-03 Texas Instruments Incorporated Two-phase CCD regenerator - I/O circuits

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2204013A1 (fr) * 1972-10-20 1974-05-17 Westinghouse Electric Corp
US4035667A (en) * 1975-12-02 1977-07-12 International Business Machines Corporation Input circuit for inserting charge packets into a charge-transfer-device
US4118795A (en) * 1976-08-27 1978-10-03 Texas Instruments Incorporated Two-phase CCD regenerator - I/O circuits
DE2654316A1 (de) * 1976-11-30 1978-06-01 Siemens Ag Halbleitervorrichtung

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/71 *
EXBK/77 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988007766A1 (fr) * 1987-03-23 1988-10-06 Eastman Kodak Company Architecture d'electrometre ccd

Also Published As

Publication number Publication date
JPS5559771A (en) 1980-05-06
DE2942827A1 (de) 1980-04-30

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Legal Events

Date Code Title Description
ST Notification of lapse