FR2440079A1 - Element a transfert de charges perfectionne - Google Patents
Element a transfert de charges perfectionneInfo
- Publication number
- FR2440079A1 FR2440079A1 FR7926163A FR7926163A FR2440079A1 FR 2440079 A1 FR2440079 A1 FR 2440079A1 FR 7926163 A FR7926163 A FR 7926163A FR 7926163 A FR7926163 A FR 7926163A FR 2440079 A1 FR2440079 A1 FR 2440079A1
- Authority
- FR
- France
- Prior art keywords
- charge
- channel region
- region
- conductivity
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000001419 dependent effect Effects 0.000 title abstract 3
- 238000001514 detection method Methods 0.000 title 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76816—Output structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
UN CIRCUIT A COUPLAGE DE CHARGES QUI COMPORTE UNE PARTIE SORTIE AYANT UN TRANSISTOR A EFFET DE CHAMP 120 DISPOSE DANS LE CANAL A PUITS DE POTENTIEL 101 POUR DELIVRER UNE LECTURE POUR SORTIE NON DESTRUCTIVE DE LA VALEUR ANALOGIQUE D'UN PAQUET DE CHARGES SITUE DANS LA PARTIE D'UN TEL CANAL A PUITS DE POTENTIEL SITUEE SOUS LE TRANSISTOR. LES ZONES DE DRAIN 133, DE SOURCE 134 ET DE CANAL DU TRANSISTOR SONT DISPOSEES TRANSVERSALEMENT AU COURANT DES PAQUETS DE CHARGE. LA CONDUCTIVITE DU CANAL EST MODULEE EN FONCTION DE LA VALEUR D'UN PAQUET DE CHARGES DANS LE PUITS DE POTENTIEL SITUE SOUS LE TRANSISTOR.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US95380878A | 1978-10-03 | 1978-10-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2440079A1 true FR2440079A1 (fr) | 1980-05-23 |
Family
ID=25494554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7926163A Withdrawn FR2440079A1 (fr) | 1978-10-23 | 1979-10-22 | Element a transfert de charges perfectionne |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5559771A (fr) |
DE (1) | DE2942827A1 (fr) |
FR (1) | FR2440079A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1988007766A1 (fr) * | 1987-03-23 | 1988-10-06 | Eastman Kodak Company | Architecture d'electrometre ccd |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0831595B2 (ja) * | 1988-01-08 | 1996-03-27 | 日本電気株式会社 | 電荷転送素子 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2204013A1 (fr) * | 1972-10-20 | 1974-05-17 | Westinghouse Electric Corp | |
US4035667A (en) * | 1975-12-02 | 1977-07-12 | International Business Machines Corporation | Input circuit for inserting charge packets into a charge-transfer-device |
DE2654316A1 (de) * | 1976-11-30 | 1978-06-01 | Siemens Ag | Halbleitervorrichtung |
US4118795A (en) * | 1976-08-27 | 1978-10-03 | Texas Instruments Incorporated | Two-phase CCD regenerator - I/O circuits |
-
1979
- 1979-10-22 FR FR7926163A patent/FR2440079A1/fr not_active Withdrawn
- 1979-10-23 DE DE19792942827 patent/DE2942827A1/de not_active Withdrawn
- 1979-10-23 JP JP13604779A patent/JPS5559771A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2204013A1 (fr) * | 1972-10-20 | 1974-05-17 | Westinghouse Electric Corp | |
US4035667A (en) * | 1975-12-02 | 1977-07-12 | International Business Machines Corporation | Input circuit for inserting charge packets into a charge-transfer-device |
US4118795A (en) * | 1976-08-27 | 1978-10-03 | Texas Instruments Incorporated | Two-phase CCD regenerator - I/O circuits |
DE2654316A1 (de) * | 1976-11-30 | 1978-06-01 | Siemens Ag | Halbleitervorrichtung |
Non-Patent Citations (2)
Title |
---|
EXBK/71 * |
EXBK/77 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1988007766A1 (fr) * | 1987-03-23 | 1988-10-06 | Eastman Kodak Company | Architecture d'electrometre ccd |
Also Published As
Publication number | Publication date |
---|---|
JPS5559771A (en) | 1980-05-06 |
DE2942827A1 (de) | 1980-04-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |