JPS5577177A - Mos type semiconductor device - Google Patents
Mos type semiconductor deviceInfo
- Publication number
- JPS5577177A JPS5577177A JP15338678A JP15338678A JPS5577177A JP S5577177 A JPS5577177 A JP S5577177A JP 15338678 A JP15338678 A JP 15338678A JP 15338678 A JP15338678 A JP 15338678A JP S5577177 A JPS5577177 A JP S5577177A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- voltage
- channel length
- channel
- becomes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE: To improve gate voltage-drain current characteristics, by using a gate shape whose channel length is varied by channel width direction.
CONSTITUTION: An n-type drain 2 and an n-type source 3 are formed on a p-type Si substrate. A gate 5's length is rectilinearly shortened in the direction of width perpendicularly to a channel length l. And therefore, when the channel length l becomes short, the threshold value voltage goes down, and short channel effect starts appearing from a certain point. Now, the gate 5 is formed in such a manner as to give rise to the short channel effect at the minimum value of the channel length. At this time, if the gate voltage VO is sufficiently high and an entire region of the gate 5 is in a condition of ON, a drain current ID passes the entire area but becomes OFF with descent of the voltage VO and control of low amplification becomes very easy. The shape of this characteristic curve can be finely changed by shape of the gate.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15338678A JPS5577177A (en) | 1978-12-06 | 1978-12-06 | Mos type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15338678A JPS5577177A (en) | 1978-12-06 | 1978-12-06 | Mos type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5577177A true JPS5577177A (en) | 1980-06-10 |
Family
ID=15561337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15338678A Pending JPS5577177A (en) | 1978-12-06 | 1978-12-06 | Mos type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5577177A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5675165A (en) * | 1994-08-02 | 1997-10-07 | Lien; Chuen-Der | Stable SRAM cell using low backgate biased threshold voltage select transistors |
WO1998050959A1 (en) * | 1997-05-06 | 1998-11-12 | Siemens Aktiengesellschaft | Semiconductor component |
US6028338A (en) * | 1991-05-14 | 2000-02-22 | Seiko Instruments Inc. | Semiconductor integrated circuit device with electrostatic damage protection |
-
1978
- 1978-12-06 JP JP15338678A patent/JPS5577177A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6028338A (en) * | 1991-05-14 | 2000-02-22 | Seiko Instruments Inc. | Semiconductor integrated circuit device with electrostatic damage protection |
US5675165A (en) * | 1994-08-02 | 1997-10-07 | Lien; Chuen-Der | Stable SRAM cell using low backgate biased threshold voltage select transistors |
US5786245A (en) * | 1994-08-02 | 1998-07-28 | Integrated Device Technology, Inc. | Method for forming a stable SRAM cell using low backgate biased threshold voltage select transistors |
WO1998050959A1 (en) * | 1997-05-06 | 1998-11-12 | Siemens Aktiengesellschaft | Semiconductor component |
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