JPS5577177A - Mos type semiconductor device - Google Patents

Mos type semiconductor device

Info

Publication number
JPS5577177A
JPS5577177A JP15338678A JP15338678A JPS5577177A JP S5577177 A JPS5577177 A JP S5577177A JP 15338678 A JP15338678 A JP 15338678A JP 15338678 A JP15338678 A JP 15338678A JP S5577177 A JPS5577177 A JP S5577177A
Authority
JP
Japan
Prior art keywords
gate
voltage
channel length
channel
becomes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15338678A
Other languages
Japanese (ja)
Inventor
Kyohiko Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15338678A priority Critical patent/JPS5577177A/en
Publication of JPS5577177A publication Critical patent/JPS5577177A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: To improve gate voltage-drain current characteristics, by using a gate shape whose channel length is varied by channel width direction.
CONSTITUTION: An n-type drain 2 and an n-type source 3 are formed on a p-type Si substrate. A gate 5's length is rectilinearly shortened in the direction of width perpendicularly to a channel length l. And therefore, when the channel length l becomes short, the threshold value voltage goes down, and short channel effect starts appearing from a certain point. Now, the gate 5 is formed in such a manner as to give rise to the short channel effect at the minimum value of the channel length. At this time, if the gate voltage VO is sufficiently high and an entire region of the gate 5 is in a condition of ON, a drain current ID passes the entire area but becomes OFF with descent of the voltage VO and control of low amplification becomes very easy. The shape of this characteristic curve can be finely changed by shape of the gate.
COPYRIGHT: (C)1980,JPO&Japio
JP15338678A 1978-12-06 1978-12-06 Mos type semiconductor device Pending JPS5577177A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15338678A JPS5577177A (en) 1978-12-06 1978-12-06 Mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15338678A JPS5577177A (en) 1978-12-06 1978-12-06 Mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5577177A true JPS5577177A (en) 1980-06-10

Family

ID=15561337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15338678A Pending JPS5577177A (en) 1978-12-06 1978-12-06 Mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5577177A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5675165A (en) * 1994-08-02 1997-10-07 Lien; Chuen-Der Stable SRAM cell using low backgate biased threshold voltage select transistors
WO1998050959A1 (en) * 1997-05-06 1998-11-12 Siemens Aktiengesellschaft Semiconductor component
US6028338A (en) * 1991-05-14 2000-02-22 Seiko Instruments Inc. Semiconductor integrated circuit device with electrostatic damage protection

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6028338A (en) * 1991-05-14 2000-02-22 Seiko Instruments Inc. Semiconductor integrated circuit device with electrostatic damage protection
US5675165A (en) * 1994-08-02 1997-10-07 Lien; Chuen-Der Stable SRAM cell using low backgate biased threshold voltage select transistors
US5786245A (en) * 1994-08-02 1998-07-28 Integrated Device Technology, Inc. Method for forming a stable SRAM cell using low backgate biased threshold voltage select transistors
WO1998050959A1 (en) * 1997-05-06 1998-11-12 Siemens Aktiengesellschaft Semiconductor component

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