ES455227A1 - Procedimiento de recubrimiento de subtratos por deposicion de plasma. - Google Patents
Procedimiento de recubrimiento de subtratos por deposicion de plasma.Info
- Publication number
- ES455227A1 ES455227A1 ES455227A ES455227A ES455227A1 ES 455227 A1 ES455227 A1 ES 455227A1 ES 455227 A ES455227 A ES 455227A ES 455227 A ES455227 A ES 455227A ES 455227 A1 ES455227 A1 ES 455227A1
- Authority
- ES
- Spain
- Prior art keywords
- gas
- substrates
- pref
- sih4
- gas flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000007789 gas Substances 0.000 abstract 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 3
- 239000012159 carrier gas Substances 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Procedimiento de recubrimiento de substratos por deposición de plasma, en un tipo de reactor de flujo radial, sin sublimación catódica, activado por radiofrecuencia que comprende las etapas de introducir los gases de reacción en un reactor rarificado que contiene los substratos que se desean recubrir; establecer un flujo laminar de gases por los sustratos; y producir una reacción de descarga luminosa de plasma en el reactor en un punto adyacente a los substratos; caracterizado porque la etapa de introducción de gases comprende introducir silano, amoniaco y un gas vehículo inerte en dicho reactor pero evitando prácticamente la introducción de otros gases reactivos con los mismos.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65155776A | 1976-01-22 | 1976-01-22 | |
US05/651,556 US4142004A (en) | 1976-01-22 | 1976-01-22 | Method of coating semiconductor substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
ES455227A1 true ES455227A1 (es) | 1978-04-16 |
Family
ID=27096092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES455227A Expired ES455227A1 (es) | 1976-01-22 | 1977-01-21 | Procedimiento de recubrimiento de subtratos por deposicion de plasma. |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS52115785A (es) |
DE (1) | DE2702165A1 (es) |
ES (1) | ES455227A1 (es) |
FR (1) | FR2339251A1 (es) |
IT (1) | IT1075610B (es) |
NL (1) | NL7700641A (es) |
SE (1) | SE7700229L (es) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54128283A (en) * | 1978-03-29 | 1979-10-04 | Hitachi Ltd | Manufacture of semiconductor device |
JPS5643731A (en) * | 1979-09-17 | 1981-04-22 | Mitsubishi Electric Corp | Film forming method |
JPS5687353A (en) * | 1979-12-18 | 1981-07-15 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor integrated circuit device |
JPS5745931A (en) * | 1980-09-04 | 1982-03-16 | Fujitsu Ltd | Semiconductor device with multilayer passivation film and manufacture thereof |
JPS57141935A (en) * | 1981-02-25 | 1982-09-02 | Nec Corp | Manufacture of semiconductor device |
JPS58131733A (ja) * | 1982-01-29 | 1983-08-05 | Toshiba Corp | 半導体装置 |
EP0089382B1 (de) * | 1982-03-18 | 1986-08-20 | Ibm Deutschland Gmbh | Plasmareaktor und seine Anwendung beim Ätzen und Beschichten von Substraten |
JPS598341A (ja) * | 1982-07-06 | 1984-01-17 | Toshiba Corp | 半導体装置 |
JPS5994848A (ja) * | 1982-11-24 | 1984-05-31 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
US4513684A (en) * | 1982-12-22 | 1985-04-30 | Energy Conversion Devices, Inc. | Upstream cathode assembly |
US4455351A (en) * | 1983-06-13 | 1984-06-19 | At&T Bell Laboratories | Preparation of photodiodes |
JPS61128403A (ja) * | 1984-11-28 | 1986-06-16 | 鐘淵化学工業株式会社 | 非単結晶状シリコン系絶縁材料 |
US4618541A (en) * | 1984-12-21 | 1986-10-21 | Advanced Micro Devices, Inc. | Method of forming a silicon nitride film transparent to ultraviolet radiation and resulting article |
JPS61284928A (ja) * | 1985-06-10 | 1986-12-15 | Mitsubishi Electric Corp | 半導体装置 |
JPH084109B2 (ja) * | 1987-08-18 | 1996-01-17 | 富士通株式会社 | 半導体装置およびその製造方法 |
FR2725015B1 (fr) * | 1994-09-23 | 1996-12-20 | Innovatique Sa | Four utilisable pour la nitruration a basse pression d'une piece metallique |
EP0707661B1 (fr) * | 1994-04-22 | 2000-03-15 | Innovatique S.A. | Procede pour la nitruration a basse pression d'une piece metallique et four pour la mise en uvre dudit procede |
JP6146160B2 (ja) * | 2013-06-26 | 2017-06-14 | 東京エレクトロン株式会社 | 成膜方法、記憶媒体及び成膜装置 |
-
1977
- 1977-01-11 SE SE7700229A patent/SE7700229L/xx unknown
- 1977-01-20 IT IT19482/77A patent/IT1075610B/it active
- 1977-01-20 FR FR7701539A patent/FR2339251A1/fr not_active Withdrawn
- 1977-01-20 DE DE19772702165 patent/DE2702165A1/de active Pending
- 1977-01-21 ES ES455227A patent/ES455227A1/es not_active Expired
- 1977-01-21 NL NL7700641A patent/NL7700641A/xx not_active Application Discontinuation
- 1977-01-22 JP JP544077A patent/JPS52115785A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE2702165A1 (de) | 1977-07-28 |
NL7700641A (nl) | 1977-07-26 |
IT1075610B (it) | 1985-04-22 |
JPS52115785A (en) | 1977-09-28 |
SE7700229L (sv) | 1977-07-23 |
FR2339251A1 (fr) | 1977-08-19 |
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