JPS5643731A - Film forming method - Google Patents

Film forming method

Info

Publication number
JPS5643731A
JPS5643731A JP11952379A JP11952379A JPS5643731A JP S5643731 A JPS5643731 A JP S5643731A JP 11952379 A JP11952379 A JP 11952379A JP 11952379 A JP11952379 A JP 11952379A JP S5643731 A JPS5643731 A JP S5643731A
Authority
JP
Japan
Prior art keywords
film
high frequency
electrode
quality
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11952379A
Other languages
Japanese (ja)
Inventor
Masahiko Denda
Katsuhiro Hirata
Haruhiko Abe
Natsuo Tsubouchi
Shigeji Kinoshita
Hiroji Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11952379A priority Critical patent/JPS5643731A/en
Publication of JPS5643731A publication Critical patent/JPS5643731A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To make it possible to control a film quality of a formed film by a plasma CVD method by a method wherein a high frequency high voltage is applied, while verifying the distance between the electrode that laying a semiconductor substrate and other electrode. CONSTITUTION:A silicon wafer 7 is placed on a heater saceptor 3 which arranged in a chamber 1, a high frequency voltage is applied on the high frequency electrode 4 while a gas is flown from a reaction gas input 5, a gas spout hole 6, make the reaction gas plasma generated in the chamber, a plasma reaction film such as the nitriding film on the oxidized film or others is formed at a wafer 7. At that time, the film quality is controlled while changing the distance X between electrodes 4 and 7. Thus, in the case of forming various kind of film, since the film having an appropriate quality can be formed voluntarily, the characteristic of the semiconductor device can be enhanced.
JP11952379A 1979-09-17 1979-09-17 Film forming method Pending JPS5643731A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11952379A JPS5643731A (en) 1979-09-17 1979-09-17 Film forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11952379A JPS5643731A (en) 1979-09-17 1979-09-17 Film forming method

Publications (1)

Publication Number Publication Date
JPS5643731A true JPS5643731A (en) 1981-04-22

Family

ID=14763377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11952379A Pending JPS5643731A (en) 1979-09-17 1979-09-17 Film forming method

Country Status (1)

Country Link
JP (1) JPS5643731A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58131733A (en) * 1982-01-29 1983-08-05 Toshiba Corp Semiconductor device
JP2012015403A (en) * 2010-07-02 2012-01-19 Semiconductor Energy Lab Co Ltd Film formation method and manufacturing method of thin film transistor
DE102010056020B4 (en) * 2009-12-23 2021-03-18 Wilhelm Beckmann Method and apparatus for forming a dielectric layer on a substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52115785A (en) * 1976-01-22 1977-09-28 Western Electric Co Process for coating substrate
JPS5374372A (en) * 1976-12-15 1978-07-01 Hitachi Ltd Plasma cvd device
JPS5459878A (en) * 1977-10-21 1979-05-14 Hitachi Ltd Reaction treatment apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52115785A (en) * 1976-01-22 1977-09-28 Western Electric Co Process for coating substrate
JPS5374372A (en) * 1976-12-15 1978-07-01 Hitachi Ltd Plasma cvd device
JPS5459878A (en) * 1977-10-21 1979-05-14 Hitachi Ltd Reaction treatment apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58131733A (en) * 1982-01-29 1983-08-05 Toshiba Corp Semiconductor device
DE102010056020B4 (en) * 2009-12-23 2021-03-18 Wilhelm Beckmann Method and apparatus for forming a dielectric layer on a substrate
JP2012015403A (en) * 2010-07-02 2012-01-19 Semiconductor Energy Lab Co Ltd Film formation method and manufacturing method of thin film transistor

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