ES2144284T3 - Memoria solo de lectura y procedimiento para la activacion de la misma. - Google Patents
Memoria solo de lectura y procedimiento para la activacion de la misma.Info
- Publication number
- ES2144284T3 ES2144284T3 ES96945894T ES96945894T ES2144284T3 ES 2144284 T3 ES2144284 T3 ES 2144284T3 ES 96945894 T ES96945894 T ES 96945894T ES 96945894 T ES96945894 T ES 96945894T ES 2144284 T3 ES2144284 T3 ES 2144284T3
- Authority
- ES
- Spain
- Prior art keywords
- procedure
- storage cells
- activation
- same
- reading memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title abstract 2
- 230000004913 activation Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
- Stereo-Broadcasting Methods (AREA)
- Communication Control (AREA)
- Electrotherapy Devices (AREA)
Abstract
LA INVENCION DESCRIBE UNA MEMORIA DE DATOS FIJOS CON MULTIPLES CELDAS DE ALMACENAMIENTO, CUYO CONTENIDO SE PUEDE LEER ENVIANDO LOS COMANDOS OPORTUNOS POR LINEAS DE PALABRAS, DE BITS Y DE FUENTE (WL, BL, SL). DICHA MEMORIA SE CARACTERIZA POR QUE LAS CELDAS DE ALMACENAMIENTO, QUE SE CONTROLAN CON UNA UNICA LINEA DE PALABRAS (WL), ESTAN DIVIDIDAS EN MULTIPLES GRUPOS, A CADA UNO DE LOS CUALES LE CORRESPONDE UNA LINEA DE FUENTE COMUN (SL). DE ACUERDO CON EL PROCEDIMIENTO QUE PROPONE LA INVENCION, LAS CELULAS DE ALMACENAMIENTO SE LEEN POR GRUPOS.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19545557A DE19545557A1 (de) | 1995-12-06 | 1995-12-06 | Festspeicher und Verfahren zur Ansteuerung desselben |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2144284T3 true ES2144284T3 (es) | 2000-06-01 |
Family
ID=7779374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES96945894T Expired - Lifetime ES2144284T3 (es) | 1995-12-06 | 1996-11-21 | Memoria solo de lectura y procedimiento para la activacion de la misma. |
Country Status (11)
Country | Link |
---|---|
US (2) | US6166952A (es) |
EP (1) | EP0882294B1 (es) |
JP (1) | JP2000501221A (es) |
KR (1) | KR100395975B1 (es) |
CN (1) | CN1106646C (es) |
AT (1) | ATE190427T1 (es) |
DE (2) | DE19545557A1 (es) |
ES (1) | ES2144284T3 (es) |
IN (1) | IN190574B (es) |
RU (1) | RU2190885C2 (es) |
WO (1) | WO1997021225A2 (es) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4679036B2 (ja) * | 2002-09-12 | 2011-04-27 | ルネサスエレクトロニクス株式会社 | 記憶装置 |
CN1327527C (zh) * | 2004-10-15 | 2007-07-18 | 清华大学 | 一种能够实现反向读取的sonos型快闪存储器阵列构架的操作方法 |
US8144509B2 (en) * | 2008-06-27 | 2012-03-27 | Qualcomm Incorporated | Write operation for spin transfer torque magnetoresistive random access memory with reduced bit cell size |
US8432727B2 (en) | 2010-04-29 | 2013-04-30 | Qualcomm Incorporated | Invalid write prevention for STT-MRAM array |
US9001559B2 (en) * | 2013-03-22 | 2015-04-07 | Masahiro Takahashi | Resistance change memory |
US10014065B1 (en) * | 2015-03-13 | 2018-07-03 | Skan Technologies Corporation | PPA (power performance area) efficient architecture for ROM (read only memory) and a ROM bitcell without a transistor |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58111190A (ja) | 1981-12-25 | 1983-07-02 | Hitachi Ltd | 横型ダイナミツクrom |
JPS59186199A (ja) | 1983-04-08 | 1984-10-22 | Seiko Epson Corp | 半導体メモリ |
JPS63244393A (ja) | 1987-03-30 | 1988-10-11 | Nec Corp | 並列入出力回路を有する記憶装置 |
US5065364A (en) * | 1989-09-15 | 1991-11-12 | Intel Corporation | Apparatus for providing block erasing in a flash EPROM |
US5249158A (en) * | 1991-02-11 | 1993-09-28 | Intel Corporation | Flash memory blocking architecture |
EP0509184A1 (en) * | 1991-04-18 | 1992-10-21 | STMicroelectronics S.r.l. | Flash memory erasable by sectors and related writing process |
JP2632104B2 (ja) * | 1991-11-07 | 1997-07-23 | 三菱電機株式会社 | 不揮発性半導体記憶装置 |
TW231343B (es) * | 1992-03-17 | 1994-10-01 | Hitachi Seisakusyo Kk | |
US5267196A (en) * | 1992-06-19 | 1993-11-30 | Intel Corporation | Floating gate nonvolatile memory with distributed blocking feature |
JPH06318683A (ja) * | 1993-05-01 | 1994-11-15 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
DE69305986T2 (de) | 1993-07-29 | 1997-03-06 | Sgs Thomson Microelectronics | Schaltungsstruktur für Speichermatrix und entsprechende Herstellungsverfahren |
JP3564610B2 (ja) * | 1994-07-26 | 2004-09-15 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
US5963478A (en) * | 1995-12-06 | 1999-10-05 | Siemens Aktiengesellschaft | EEPROM and method of driving the same |
US5687117A (en) * | 1996-02-23 | 1997-11-11 | Micron Quantum Devices, Inc. | Segmented non-volatile memory array with multiple sources having improved source line decode circuitry |
US5945717A (en) * | 1997-03-11 | 1999-08-31 | Micron Technology, Inc. | Segmented non-volatile memory array having multiple sources |
-
1995
- 1995-12-06 DE DE19545557A patent/DE19545557A1/de not_active Withdrawn
-
1996
- 1996-11-21 ES ES96945894T patent/ES2144284T3/es not_active Expired - Lifetime
- 1996-11-21 AT AT96945894T patent/ATE190427T1/de active
- 1996-11-21 EP EP96945894A patent/EP0882294B1/de not_active Expired - Lifetime
- 1996-11-21 JP JP9520857A patent/JP2000501221A/ja not_active Ceased
- 1996-11-21 DE DE59604631T patent/DE59604631D1/de not_active Expired - Lifetime
- 1996-11-21 RU RU98112272/09A patent/RU2190885C2/ru active
- 1996-11-21 KR KR10-1998-0704132A patent/KR100395975B1/ko not_active IP Right Cessation
- 1996-11-21 WO PCT/DE1996/002241 patent/WO1997021225A2/de active IP Right Grant
- 1996-11-21 CN CN96198868A patent/CN1106646C/zh not_active Expired - Lifetime
- 1996-12-04 IN IN2090CA1996 patent/IN190574B/en unknown
-
1998
- 1998-06-08 US US09/093,573 patent/US6166952A/en not_active Ceased
-
2001
- 2001-02-14 US US09/783,183 patent/USRE41734E1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
USRE41734E1 (en) | 2010-09-21 |
CN1203687A (zh) | 1998-12-30 |
JP2000501221A (ja) | 2000-02-02 |
DE59604631D1 (de) | 2000-04-13 |
EP0882294B1 (de) | 2000-03-08 |
US6166952A (en) | 2000-12-26 |
DE19545557A1 (de) | 1997-06-12 |
IN190574B (es) | 2003-08-09 |
CN1106646C (zh) | 2003-04-23 |
KR19990071848A (ko) | 1999-09-27 |
ATE190427T1 (de) | 2000-03-15 |
WO1997021225A3 (de) | 1997-08-14 |
KR100395975B1 (ko) | 2003-10-17 |
RU2190885C2 (ru) | 2002-10-10 |
WO1997021225A2 (de) | 1997-06-12 |
EP0882294A2 (de) | 1998-12-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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