EP2854160A4 - Substratverarbeitungsvorrichtung und substratverarbeitungsverfahren - Google Patents
Substratverarbeitungsvorrichtung und substratverarbeitungsverfahrenInfo
- Publication number
- EP2854160A4 EP2854160A4 EP13794483.1A EP13794483A EP2854160A4 EP 2854160 A4 EP2854160 A4 EP 2854160A4 EP 13794483 A EP13794483 A EP 13794483A EP 2854160 A4 EP2854160 A4 EP 2854160A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate processing
- processing apparatus
- processing method
- substrate
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title 2
- 238000003672 processing method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012117507 | 2012-05-23 | ||
US201261654319P | 2012-06-01 | 2012-06-01 | |
PCT/JP2013/061289 WO2013175897A1 (ja) | 2012-05-23 | 2013-04-16 | 基板処理装置及び基板処理方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2854160A1 EP2854160A1 (de) | 2015-04-01 |
EP2854160A4 true EP2854160A4 (de) | 2016-01-20 |
EP2854160B1 EP2854160B1 (de) | 2020-04-08 |
Family
ID=49623599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP13794483.1A Active EP2854160B1 (de) | 2012-05-23 | 2013-04-16 | Substratverarbeitungsverfahren |
Country Status (6)
Country | Link |
---|---|
US (2) | US20150132970A1 (de) |
EP (1) | EP2854160B1 (de) |
JP (2) | JP6082391B2 (de) |
KR (1) | KR102107256B1 (de) |
CN (1) | CN104350584B (de) |
WO (1) | WO2013175897A1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104350584B (zh) * | 2012-05-23 | 2017-04-19 | 东京毅力科创株式会社 | 基板处理装置及基板处理方法 |
CN104342632B (zh) * | 2013-08-07 | 2017-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 预清洗腔室及等离子体加工设备 |
JP6516542B2 (ja) * | 2015-04-20 | 2019-05-22 | 東京エレクトロン株式会社 | 被エッチング層をエッチングする方法 |
KR101720620B1 (ko) * | 2015-04-21 | 2017-03-28 | 주식회사 유진테크 | 기판처리장치 및 챔버 세정방법 |
EP3104418B8 (de) * | 2015-06-08 | 2018-04-04 | Meyer Burger (Germany) GmbH | Verfahren und vorrichtung zum texturieren einer siliziumoberfläche |
KR102449182B1 (ko) * | 2015-10-15 | 2022-10-04 | 삼성전자주식회사 | 배선 형성 방법 및 이를 이용한 자기 기억 소자의 제조방법 |
JP2017152531A (ja) | 2016-02-24 | 2017-08-31 | 東京エレクトロン株式会社 | 基板処理方法 |
JP2017157778A (ja) * | 2016-03-04 | 2017-09-07 | 東京エレクトロン株式会社 | 基板処理装置 |
JP6715129B2 (ja) * | 2016-08-31 | 2020-07-01 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US10267728B2 (en) * | 2016-09-28 | 2019-04-23 | Lam Research Corporation | Systems and methods for detecting oxygen in-situ in a substrate area of a substrate processing system |
JP6764771B2 (ja) | 2016-11-28 | 2020-10-07 | 東京エレクトロン株式会社 | 基板処理装置及び遮熱板 |
TWI602238B (zh) * | 2016-11-30 | 2017-10-11 | 財團法人工業技術研究院 | 氣相蝕刻反應裝置與氣相蝕刻方法 |
US11694911B2 (en) * | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
CN108242504A (zh) * | 2016-12-27 | 2018-07-03 | 上海磁宇信息科技有限公司 | 一种磁性隧道结的修剪方法及其制备方法 |
KR102096700B1 (ko) * | 2017-03-29 | 2020-04-02 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 기판 처리 방법 |
US10790119B2 (en) * | 2017-06-09 | 2020-09-29 | Mattson Technology, Inc | Plasma processing apparatus with post plasma gas injection |
JP6929148B2 (ja) | 2017-06-30 | 2021-09-01 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
CN118231247A (zh) * | 2017-12-14 | 2024-06-21 | 应用材料公司 | 蚀刻金属氧化物而蚀刻残留物较少的方法 |
WO2021130826A1 (ja) * | 2019-12-23 | 2021-07-01 | 株式会社日立ハイテク | プラズマ処理装置 |
JP7244447B2 (ja) * | 2020-02-20 | 2023-03-22 | 株式会社日立ハイテク | プラズマ処理装置 |
JP7404119B2 (ja) * | 2020-03-19 | 2023-12-25 | 住友重機械工業株式会社 | 負イオン生成装置 |
JP7486398B2 (ja) | 2020-10-19 | 2024-05-17 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
US20220122820A1 (en) | 2020-10-20 | 2022-04-21 | Tokyo Electron Limited | Substrate processing apparatus |
JP2024048167A (ja) | 2022-09-27 | 2024-04-08 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ励起用アンテナのコイルホルダ |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040137749A1 (en) * | 2003-01-13 | 2004-07-15 | Applied Materials, Inc. | Method for removing conductive residue |
US20070286967A1 (en) * | 2004-09-17 | 2007-12-13 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US20090029564A1 (en) * | 2005-05-31 | 2009-01-29 | Tokyo Electron Limited | Plasma treatment apparatus and plasma treatment method |
US20100206846A1 (en) * | 2009-02-17 | 2010-08-19 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6486521A (en) * | 1987-09-29 | 1989-03-31 | Toshiba Corp | Dry etching |
JPH01211920A (ja) * | 1988-02-19 | 1989-08-25 | Toshiba Corp | 光化学反応装置 |
JPH0740569B2 (ja) | 1990-02-27 | 1995-05-01 | エイ・ティ・アンド・ティ・コーポレーション | Ecrプラズマ堆積方法 |
US5221424A (en) | 1991-11-21 | 1993-06-22 | Applied Materials, Inc. | Method for removal of photoresist over metal which also removes or inactivates corosion-forming materials remaining from previous metal etch |
JPH07245193A (ja) * | 1994-03-02 | 1995-09-19 | Nissin Electric Co Ltd | プラズマ発生装置及びプラズマ処理装置 |
US5811022A (en) * | 1994-11-15 | 1998-09-22 | Mattson Technology, Inc. | Inductive plasma reactor |
JP3353514B2 (ja) * | 1994-12-09 | 2002-12-03 | ソニー株式会社 | プラズマ処理装置、プラズマ処理方法及び半導体装置の作製方法 |
TW473857B (en) * | 1996-04-26 | 2002-01-21 | Hitachi Ltd | Method of manufacturing semiconductor device |
JP3317209B2 (ja) * | 1997-08-12 | 2002-08-26 | 東京エレクトロンエイ・ティー株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2003158127A (ja) | 2001-09-07 | 2003-05-30 | Arieesu Gijutsu Kenkyu Kk | 成膜方法、成膜装置、及び半導体装置 |
JP4653470B2 (ja) * | 2004-12-02 | 2011-03-16 | 株式会社アルバック | エッチング方法 |
US20070281106A1 (en) | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
US20070281105A1 (en) * | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas |
JP2008288281A (ja) * | 2007-05-15 | 2008-11-27 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および基板処理装置 |
JP2009016453A (ja) * | 2007-07-02 | 2009-01-22 | Tokyo Electron Ltd | プラズマ処理装置 |
JP4971930B2 (ja) * | 2007-09-28 | 2012-07-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US20090277587A1 (en) * | 2008-05-09 | 2009-11-12 | Applied Materials, Inc. | Flowable dielectric equipment and processes |
US8043434B2 (en) * | 2008-10-23 | 2011-10-25 | Lam Research Corporation | Method and apparatus for removing photoresist |
JP5253237B2 (ja) * | 2009-03-05 | 2013-07-31 | 芝浦メカトロニクス株式会社 | プラズマ処理装置およびプラズマ処理方法 |
KR101080604B1 (ko) | 2010-02-09 | 2011-11-04 | 성균관대학교산학협력단 | 원자층 식각 장치 및 이를 이용한 식각 방법 |
US8999856B2 (en) * | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
JP5823160B2 (ja) * | 2011-05-11 | 2015-11-25 | 東京エレクトロン株式会社 | 堆積物除去方法 |
CN104350584B (zh) * | 2012-05-23 | 2017-04-19 | 东京毅力科创株式会社 | 基板处理装置及基板处理方法 |
-
2013
- 2013-04-16 CN CN201380021625.XA patent/CN104350584B/zh active Active
- 2013-04-16 WO PCT/JP2013/061289 patent/WO2013175897A1/ja active Application Filing
- 2013-04-16 KR KR1020147029334A patent/KR102107256B1/ko active IP Right Grant
- 2013-04-16 US US14/396,032 patent/US20150132970A1/en not_active Abandoned
- 2013-04-16 JP JP2014516723A patent/JP6082391B2/ja active Active
- 2013-04-16 EP EP13794483.1A patent/EP2854160B1/de active Active
-
2017
- 2017-01-20 JP JP2017008536A patent/JP6228694B2/ja active Active
-
2019
- 2019-09-11 US US16/567,642 patent/US10923329B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040137749A1 (en) * | 2003-01-13 | 2004-07-15 | Applied Materials, Inc. | Method for removing conductive residue |
US20070286967A1 (en) * | 2004-09-17 | 2007-12-13 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US20090029564A1 (en) * | 2005-05-31 | 2009-01-29 | Tokyo Electron Limited | Plasma treatment apparatus and plasma treatment method |
US20100206846A1 (en) * | 2009-02-17 | 2010-08-19 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
Non-Patent Citations (1)
Title |
---|
See also references of WO2013175897A1 * |
Also Published As
Publication number | Publication date |
---|---|
JPWO2013175897A1 (ja) | 2016-01-12 |
CN104350584B (zh) | 2017-04-19 |
CN104350584A (zh) | 2015-02-11 |
JP6228694B2 (ja) | 2017-11-08 |
US20200111646A1 (en) | 2020-04-09 |
JP2017085161A (ja) | 2017-05-18 |
WO2013175897A1 (ja) | 2013-11-28 |
KR20150016490A (ko) | 2015-02-12 |
EP2854160B1 (de) | 2020-04-08 |
EP2854160A1 (de) | 2015-04-01 |
JP6082391B2 (ja) | 2017-02-15 |
KR102107256B1 (ko) | 2020-05-06 |
US20150132970A1 (en) | 2015-05-14 |
US10923329B2 (en) | 2021-02-16 |
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