EP2744009B1 - Substrat de réseau, son procédé de fabrication et dispositif d'affichage - Google Patents

Substrat de réseau, son procédé de fabrication et dispositif d'affichage Download PDF

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EP2744009B1
EP2744009B1 EP13196459.5A EP13196459A EP2744009B1 EP 2744009 B1 EP2744009 B1 EP 2744009B1 EP 13196459 A EP13196459 A EP 13196459A EP 2744009 B1 EP2744009 B1 EP 2744009B1
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Prior art keywords
electrode
layer
oled
forming
color filter
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EP2744009A1 (fr
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Young Suk Song
Seong Yeol Yoo
Seung Jin Choi
Hee Cheol Kim
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission

Definitions

  • Embodiments of the present invention relate to an array substrate, a manufacturing method thereof and a display device.
  • OLED Organic light-emitting diode
  • OLED organic light-emitting diode
  • the power efficiency of a white OLED (WOLED) has exceeded 60lm/W and the service life of the WOLED has reached 20,000 hours or more, greatly promoting the development of the WOLED.
  • an organic emission layer 102 is doped for three primitive colors RGB, so that it can emit white light.
  • the organic emission layer 102 is disposed between a cathode 101 and an anode 103, and the white light emitted by the emission layer is reflected by the cathode 101 and emitted from the side of the anode 103.
  • a transflective layer 103' is respectively disposed corresponding to color filters of each color on one side of the anode, so that a microcavity structure can be formed, as illustrated in FIG 1(b) . The light is enhanced in the microcavity structure due to resonance effect.
  • US 2009/206733 A1 discloses an OLED display and a method of manufacturing the same, the OLED display includes first pixels, second pixels, and third pixels that display different colors.
  • Each pixel includes a first electrode, a second electrode that is opposite to the first electrode, and an emission layer which is disposed between the first electrode and the second electrode.
  • a semi-transparent member is positioned on or under the first electrode and forms a microcavity together with the second electrode.
  • An overcoating film is positioned under the semi-transparent member. At least one of the first pixels, the second pixels, and the third pixels has embossings formed in a surface of the semi-transparent member.
  • JP 2009 259731 A discloses a light emitting device and a method of manufacturing the same.
  • a light reflecting layer is formed in a light emitting region on a substrate
  • liquid material including a transparent resin is supplied onto the light reflecting layer
  • the liquid material is cured to form a transparent resin layer on the light reflecting layer
  • a transparent conductive layer is formed on the substrate where the transparent resin layer is formed
  • the transparent conductive layer is patterned to form a first electrode in the light emitting region
  • a light emitting function layer is formed on the first electrode
  • a second electrode having semi-reflectivity is formed on the light emitting function layer.
  • US 2010/0060148 A1 discloses an organic light emitting device comprising a first pixel displaying a first color, a second pixel displaying a second color, a third pixel displaying a third color, and a white pixel displaying a white color, wherein each of the first, second, third, and white pixels comprises a transflective member, a pixel electrode disposed on the transflective member, an organic light emitting member disposed on the pixel electrode, and a common electrode disposed on the organic light emitting member, wherein the first pixel further comprises a first light path control member disposed under the common electrode, and a portion of the white pixel comprises a white light path control member disposed under the common electrode.
  • each pixel unit comprises: a thin-film transistor (TFT) structure formed on the substrate; an organic light-emitting diode (OLED) driven by the TFT structure, the OLED being disposed on a pixel region of the pixel unit and comprising in sequence in a direction away from the substrate a transparent first electrode, an emission layer and a reflecting second electrode for reflecting light; a color filter disposed between a layer provided with the OLED and a layer provided with the TFT structure and disposed in the pixel region; and a transflective layer disposed between the first electrode of the OLED and the color filter, wherein the second electrode of the OLED and the transflective layer constitute a microcavity structure.
  • TFT thin-film transistor
  • OLED organic light-emitting diode
  • It is another object of the present invention to provide an improved method for manufacturing such an array substrate comprising the following steps of: forming a TFT structure and a pattern of passivation layer on a substrate so as to define a plurality of pixel units on a substrate; forming patterns of a color filter and a transflective layer in a pixel region of the pixel unit, so that the transflective layer is disposed on the color filter; and forming an OLED in the pixel region of the pixel unit, so that the transflective layer and the color filter are disposed between a layer provided with the OLED and a layer provided with the TFT structure and disposed in the pixel region.
  • the array substrate provided by the embodiment comprises: a plurality of gate lines and data lines and pixel units formed by the intersection of the gate lines and the data lines, which are formed on a substrate 1.
  • Each pixel unit includes: a TFT structure formed on the substrate and an OLED driven by the TFT structure, wherein the OLED is disposed on a pixel region (generally referring to a display area except from the TFT structure) of the pixel unit, namely the area A in FIG. 5 .
  • the pixel unit further includes a color filter 9.
  • the OLED includes a transparent first electrode 11, an emission layer 13 and a reflecting second electrode 14 for reflecting light in sequence in the direction away from the substrate 1.
  • the first gate electrode 2, the gate insulating layer 3, the first active layer 4, the insulating layer 5 and the first source-drain layer 6 constitute a switch TFT; and the second gate electrode 2', the gate insulating layer 3, the second active layer 4', the insulating layer 5 and the second source-drain layer 6' constitute a drive TFT.
  • the surface of the color filter 9 close to the OLED is a concave-convex surface formed by arranging a plurality of concave-convex structures or wavy structures in an array.
  • the surface of the transflective layer 8 on the color filter 9 is also a surface formed by arranging a plurality of concave-convex structures or wavy structures in an array (of course, may also be a surface formed by directly manufacturing a concave-convex structure or a wavy structure on a reflecting surface of the transflective layer 8).
  • the light has different reflection angles on the concave-convex reflecting surface and is reflected in all directions, so that the emergent light can be more uniform.
  • the distance between the opposed surfaces of the second electrode 14 and the transflective layer 8 is varied within each pixel region; therefore, the intensity of light with various wavelengths can be increased by the microcavity formed by the transflective layer and the second electrode, and hence increasing the intensity of the light with different wavelengths via a complex microcavity structure can be avoided.
  • a portion between the second electrode of the OLED and the lower surface of the color filter, in the pixel region, has a uniform thickness.
  • the microcavity structure according to the embodiment of the invention can enhance light with various wavelength, light with various color enhanced by the microcavity structure passes through the color filter corresponding to each pixel unit and the light with the desired color is obtained. Therefore, this microcavity structure can be suitable for pixel units of different colors. It can be known from the above that the microcavity structures in pixel units with different colors have the same layer structure. In addition, although the microcavity has various different distances between the two reflecting surfaces due to the concave-convex structure, the total thickness of the microcavity (from the second electrode to the transflective layer) and the color filter is constant for different pixel units; therefore, the manufacturing process can be simplified greatly.
  • a resin layer 10 is further formed between the transflective layer 8 and the anode 11, and the first electrode 11 is connected with the second drain electrode via a through hole running through the passivation layer 7 and the resin layer 10.
  • the resin layer 10 is formed not only on the inside of the pixel region A but also on the TFT.
  • the embodiment of the present invention is not limited to this case, and the resin layer 10 may also be only formed on the inside of the pixel region A.
  • the pattern of color filter 9 is formed by multiple steps (3 steps as for RGB mode): a color filter of one color is formed each time, and color filters of other colors are formed successively, and hence the whole pattern of the color filter 9 is formed.
  • a color filter film of one color is formed on a passivation layer, and hence the color filter of the one color is formed on the pixel region A by patterning process; color filters of other colors are formed successively by the similar means; and hence the whole pattern of color filter 9 is formed.
  • the thickness of the color filter 9 is 1,000 to 40,000 ⁇ .
  • a transflective film is formed on the color filter 9.
  • the transflective layer is made of any metal taken from the group consisting of silver, aluminum, molybdenum, copper, titanium and chromium or an alloy formed by any two or more than two metals taken from the group consisting of silver, aluminum, molybdenum, copper, titanium and chromium; and the transmittance is 5 to 95 percent.
  • the pattern of the transflective layer 8 is formed on the pixel region A by patterning process after the transflective film is formed.
  • a plurality of concave-convex structures or wavy structures are formed on the surface of the film close to an OLED.
  • a transflective film with uniform thickness is formed on the surface on which the concave-convex structures or the wavy structures are formed (that is to say, the transflective film is conformally formed on the color filter), so that a plurality of concave-convex structures or wavy structures are formed on the surface of the formed transflective layer 8.
  • the method for forming the concave-convex structures or the wavy structures on the surface of the transflective layer 8 is not limited to the above method and may also adopt any appropriate method.
  • Step 3 forming an OLED on the pixel region A of the pixel unit, so that the transflective layer 8 and the color filter 9 are disposed between a layer provided with the OLED and a layer provided with the TFT structure.
  • the step further comprises: As illustrated in FIG. 7 , a through hole is formed in the passivation layer 7 by etching through patterning process.
  • a resin layer 10 may further be formed on the passivation layer 7, and the through hole runs through the passivation layer 7 and the resin layer 10.
  • the through hole only needs to run through the passivation layer 7.
  • a transparent conductive film is formed, and hence a pattern of a first electrode 11 of the OLED is formed by patterning process, so that the first electrode 11 is connected with the TFT structure, more specifically, connected with a drain electrode of the drive TFT, via the through hole.
  • an insulating film is formed, and hence a pattern of a pixel defining layer 12 is formed by patterning process, so that the position for forming the OLED is defined on the pixel region A.
  • An organic emission layer 13 and a second electrode 14 of the OELD are formed, and hence the OLED is formed.
  • the finally formed array substrate is as illustrated in FIG.3 .
  • the second electrode 14 is a reflecting electrode and may be made of reflecting materials; or alternatively, a reflecting layer is formed before the process of forming the second electrode 14 and hence the second electrode 14 is formed on the reflecting layer; or alternatively, the second electrode 14 is formed and hence the reflecting layer is formed on the second electrode 14.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Claims (12)

  1. Substrat de réseau, comprenant une pluralité d'unités de pixel disposées sur un substrat (1), dans lequel chaque unité de pixel comprend :
    une structure de transistor à film mince (TFT) formée sur le substrat (1) ;
    une diode électroluminescente organique (OLED) pilotée par la structure TFT, l'OLED étant disposée sur une région de pixel (A) de l'unité de pixel et comprenant en séquence dans une direction d'éloignement par rapport au substrat (1) une première électrode transparente (11), une couche d'émission (13) et une seconde électrode réfléchissante (14) pour réfléchir la lumière ;
    un filtre couleur (9) disposé entre une couche munie de l'OLED et une couche munie de la structure TFT et disposé dans la région de pixel (A) ; et
    une couche transflective (8) disposée entre la première électrode (11) de l'OLED et le filtre couleur (9) ;
    dans lequel la seconde électrode (14) de l'OLED et la couche transflective (8) constituent une structure de microcavité, et une partie entre la seconde électrode (14) de l'OLED et la surface inférieure du filtre couleur (9) présente une épaisseur uniforme à l'intérieur de la région de pixel (A) ;
    caractérisé en ce que :
    une surface de la couche transflective (8) à proximité de l'OLED est une surface formée en agençant une pluralité de structures concaves-convexes ou de structures ondulées selon un réseau de telle sorte que la distance entre les surfaces opposées de la seconde électrode (14) et de la couche transflective (8) varie à l'intérieur de chaque région de pixel pour renforcer l'intensité de la lumière selon des couleurs différentes.
  2. Substrat de réseau selon la revendication 1, dans lequel une surface du filtre couleur (9) à proximité de l'OLED est une surface concave-convexe formée en agençant une pluralité de structures concaves-convexes ou de structures ondulées selon un réseau ; et la couche transflective (8) est formée de façon conforme sur la surface concave-convexe.
  3. Substrat de réseau selon la revendication 1 ou 2, dans lequel une couche de passivation (7) est en outre formée sur la structure TFT ; l'OLED est formée sur la couche de passivation (7) ; la première électrode (11) de l'OLED est connectée à la structure TFT via un trou traversant dans la couche de passivation (7) ; le filtre couleur (9) est formé sur la couche de passivation (7) ; la couche transflective (8) est formée sur le filtre couleur (9) et est disposée dans la région de pixel (A) de l'unité de pixel ; la première électrode (11) de l'OLED est disposée au-dessus de la couche transflective (8) ; et une électrode parmi la première électrode (11) et la seconde électrode (14) est une anode, et l'autre électrode parmi la première électrode (11) et la seconde électrode (14) est une cathode.
  4. Substrat de réseau selon la revendication 3, dans lequel une couche de résine (10) est en outre formée entre la couche transflective (8) et la première électrode (11) ; et la première électrode (11) est connectée à la structure TFT via le trou traversant qui chemine au travers de la couche de résine (10) et de la couche de passivation (7).
  5. Substrat de réseau selon l'une quelconque des revendications 1 à 4, dans lequel la structure TFT comprend : une première électrode de grille (2) et une seconde électrode de grille (2') qui sont formées sur le substrat (1), une couche d'isolation de grille (3) qui est formée sur la première électrode de grille (2) et la seconde électrode de grille (2'), une première couche active (4) et une seconde couche active (4') qui sont formées sur la couche d'isolation de grille (3), une première électrode de source et une première électrode de drain qui sont formées sur la première couche active (4), et une seconde électrode de source et une seconde électrode de drain qui sont formées sur la seconde couche active (4'), et la première électrode de drain est connectée à la seconde électrode de grille (2') ; la première électrode de grille (2), la couche d'isolation de grille (3), la première couche active (4), la première électrode de source et la première électrode de drain constituent un TFT de commutation ; la seconde électrode de grille (2'), la couche d'isolation de grille (3), la seconde couche active (4'), la seconde électrode de source et la seconde électrode de drain constituent un TFT de pilotage ; et
    la seconde électrode de drain du TFT de pilotage est connectée électriquement à la première électrode (11) de l'OLED.
  6. Substrat de réseau selon l'une quelconque des revendications 1 à 5, dans lequel la couche transflective (8) est réalisée à partir d'un quelconque métal pris parmi le groupe comprenant l'argent, l'aluminium, le molybdène, le cuivre, le titane et le chrome ou un alliage formé par deux quelconques métaux ou plus de deux métaux pris parmi le groupe comprenant l'argent, l'aluminium, le molybdène, le cuivre, le titane et le chrome, et elle présente une transmittance de 5 à 95 %.
  7. Procédé pour fabriquer un substrat de réseau tel que défini selon la revendication 1, comprenant les étapes suivantes constituées par :
    la formation d'une structure TFT et d'un motif de couche de passivation (7) sur un substrat (1) de manière à définir une pluralité d'unités de pixel sur le substrat (1) ;
    la formation de motifs d'un filtre couleur (9) et d'une couche transflective (8) dans une région de pixel (A) de l'unité de pixel, de telle sorte que la couche transflective (8) soit disposée sur le filtre couleur (9) ; et
    la formation d'une OLED dans la région de pixel (A) de l'unité de pixel, de telle sorte que la couche transflective (8) et le filtre couleur (9) soient disposés entre une couche munie de l'OLED et une couche munie de la structure TFT et soient disposés dans la région de pixel (A), dans lequel l'OLED comprend en séquence dans une direction d'éloignement par rapport au substrat (1) une première électrode transparente (11), une couche d'émission organique (13) et une seconde électrode réfléchissante (14) pour réfléchir la lumière ; et
    la formation d'une partie entre la seconde électrode (14) de l'OLED et la surface inférieure du filtre couleur (9) de telle sorte qu'elle présente une épaisseur uniforme à l'intérieur de la région de pixel (A) ;
    caractérisé par :
    l'agencement d'une pluralité de structures concaves-convexes ou de structures ondulées selon un réseau pour former une surface de la couche transflective (8) à proximité de l'OLED qui comporte une pluralité de structures concaves-convexes ou ondulées de telle sorte que la distance entre les surfaces opposées de la seconde électrode (14) et de la couche transflective (8) varie à l'intérieur de chaque région de pixel pour renforcer l'intensité de la lumière selon des couleurs différentes.
  8. Procédé pour fabriquer le substrat de réseau selon la revendication 7, dans lequel la formation des motifs du filtre couleur (9) et de la couche transflective (8) comprend :
    la formation du motif du filtre couleur (9) sur la couche de passivation (7) de la région de pixel (A) de telle sorte qu'une surface du filtre couleur (9) à proximité de l'OLED soit une surface concave-convexe formée en agençant une pluralité de structures concaves-convexes ou de structures ondulées selon un réseau ; et
    la formation de façon conforme du motif de la couche transflective (8) sur le filtre couleur (9).
  9. Procédé pour fabriquer le substrat de réseau selon la revendication 7 ou 8, dans lequel la formation de l'OLED dans la région de pixel (A) de l'unité de pixel comprend :
    la formation d'un trou traversant dans la couche de passivation (7) en effectuant une gravure par l'intermédiaire d'un processus de conformation par formation de motif(s) ;
    la formation d'un film conducteur transparent, et la formation d'un motif de la première électrode (11) de l'OLED au moyen d'un processus de conformation par formation de motif(s) de telle sorte que la première électrode (11) soit connectée à la structure TFT via le trou traversant ;
    la formation d'un film isolant, et la formation d'un motif d'une couche de définition de pixel au moyen d'un processus de conformation par formation de motif(s) de telle sorte qu'une position pour former l'OLED soit définie dans la région de pixel (A) ;
    la formation de la couche d'émission organique (13) ; et
    la formation de la seconde électrode (14) pour réfléchir la lumière de l'OLED, de manière à former l'OLED.
  10. Procédé pour fabriquer le substrat de réseau selon l'une quelconque des revendications 7 à 9, comprenant en outre la formation d'une couche de résine (10) dans la région de pixel (A) après la formation des motifs du filtre couleur (9) et de la couche transflective (8) et avant la formation de l'OLED.
  11. Procédé pour fabriquer le substrat de réseau selon l'une quelconque des revendications 7 à 10, dans lequel la couche transflective (8) est réalisée à partir d'un quelconque métal pris parmi le groupe comprenant l'argent, l'aluminium, le molybdène, le cuivre, le titane et le chrome ou un alliage formé par deux quelconques métaux ou plus de deux métaux pris parmi le groupe comprenant l'argent, l'aluminium, le molybdène, le cuivre, le titane et le chrome, et elle présente une transmittance de 5 à 95 %.
  12. Dispositif d'affichage, comprenant le substrat de réseau selon l'une quelconque des revendications 1 à 6.
EP13196459.5A 2012-12-12 2013-12-10 Substrat de réseau, son procédé de fabrication et dispositif d'affichage Active EP2744009B1 (fr)

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CN201210537743.3A CN103000641B (zh) 2012-12-12 2012-12-12 阵列基板及其制作方法、显示装置

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EP2744009B1 true EP2744009B1 (fr) 2023-05-10

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US (1) US9269925B2 (fr)
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CN104538428B (zh) * 2014-12-29 2018-01-30 深圳市华星光电技术有限公司 Coa型woled结构及制作方法
CN104576700B (zh) * 2014-12-29 2017-11-03 深圳市华星光电技术有限公司 Coa型woled结构及制作方法
KR102359349B1 (ko) * 2015-02-03 2022-02-07 삼성디스플레이 주식회사 유기 발광 표시 장치
CN104867942B (zh) * 2015-04-29 2018-03-06 深圳市华星光电技术有限公司 Tft基板的制作方法及其结构
CN106076348B (zh) * 2016-06-12 2018-05-15 常州大学 一种铁铝铈三元金属氧化物催化剂制备方法
CN106158883B (zh) * 2016-09-27 2019-03-29 厦门天马微电子有限公司 显示面板、显示装置、阵列基板及其制作方法
CN108346685B (zh) * 2018-02-12 2021-01-26 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置
CN108682681B (zh) * 2018-05-25 2021-03-30 京东方科技集团股份有限公司 显示基板及其制作方法以及显示器件
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CN111223876B (zh) * 2019-11-06 2022-12-06 深圳市华星光电半导体显示技术有限公司 显示面板及显示面板的制备方法
CN115380385A (zh) * 2021-03-19 2022-11-22 京东方科技集团股份有限公司 一种显示基板及显示装置
CN113241420A (zh) * 2021-06-15 2021-08-10 京东方科技集团股份有限公司 显示模组、显示模组的制备方法和显示装置

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CN103000641A (zh) 2013-03-27
US9269925B2 (en) 2016-02-23

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