CN104538428B - Coa型woled结构及制作方法 - Google Patents
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Abstract
本发明提供一种COA型WOLED结构及制作方法,该结构包括红/绿/蓝色子像素区域,各子像素区域分别包括基板(1)、栅极(2)、栅极绝缘层(3)、氧化物半导体层(4)、蚀刻阻挡层(5)、源/漏极(6)、钝化保护层(7)、红/绿/蓝色光阻层(71/72/73)、平坦层(8)、半反射层(9)、阳极层(10)、像素定义层(11)、光阻间隔物(12)、白光发光层(13)、阴极层(14)、及封装盖板(15)。本发明通过在平坦层上形成半透明金属层作为半反射层,利用阴阳极之间产生微腔共振效应,并通过控制红/绿/蓝色光阻层上所对应的阳极层的厚度,以分别得到针对不同光色的最优化的微腔长度,从而提高经过彩色滤光片后的红/绿/蓝三原色的发光效率,有效提高COA型WOLED器件的亮度。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种COA型WOLED结构及制作方法。
背景技术
OLED(Organic Light-Emitting Diode,有机发光二极管)是一种极具发展前景的平板显示技术,它具有十分优异的显示性能,具有自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性,被誉为“梦幻显示器”。再加上其生产设备投资远小于TFT-LCD(Thin Film Transistor-Liquid Crystal Display,薄膜晶体管液晶显示器),得到了各大显示器厂家的青睐,已成为显示技术领域中第三代显示器件的主力军。目前OLED已处于大规模量产的前夜,随着研究的进一步深入,新技术的不断涌现,OLED显示器件必将有一个突破性的发展。
为实现OLED显示器的全彩化,一种方式是通过白色有机发光二极管(WOLED,WhiteOrganic Light Emitting Diode)和彩色滤光层(CF,Color Filter)叠加来实现。其中,WOLED和CF层叠加过程不需要精准的掩膜工艺,就可以实现OLED显示器的高分辨率。
COA型WOLED是COA(CF on Array,彩色滤光片贴附于阵列基板)技术和WOLED技术的结合。利用COA技术,将CF层(红/绿/蓝光阻)做到阵列基板上,然后OLED白光材料所发射的白光通过红/绿/蓝光阻,得到红/绿/蓝三原色的光。与传统底发光OLED结构相比,这种技术不受有机蒸镀光罩在大尺寸面板制作的限制,因此,在大尺寸OLED方面有着广泛的应用。
图1所示为一种现有COA型WOLED结构的红色子像素区域的结构示意图;其包括基板100、设于所述基板100上的栅极200、设于所述栅极200上的栅极绝缘层300、设于所述栅极绝缘层300上的岛状氧化物半导体层400、设于所述氧化物半导体层400上的岛状蚀刻阻挡层500、设于所述蚀刻阻挡层500上的源/漏极600、设于所述源/漏极600上的钝化保护层700、设于所述钝化保护层700上的红色光阻层710、设于所述钝化保护层700上覆盖所述红色光阻层710的平坦层800、设于所述平坦层800上并经由过孔810与所述源/漏极600相接触的阳极层101、设于所述阳极层101上的像素定义层110、设于所述像素定义层110上的光阻间隔物120。该COA型WOLED结构的绿色子像素区域及蓝色子像素区域的结构与红色子像素区域相同。
上述COA型WOLED的缺点之一是红/绿/蓝三原色的发光效率相对较低。传统顶发射型OLED器件可以通过调节OLED器件的厚度,利用微腔共振效应,使得发光效率得到有效增强。但在上述COA型WOLED中,无法像传统OLED器件一样通过调节器件的厚度,利用微腔效应提高各个光色的发光效率。
发明内容
本发明的目的在于提供一种COA型WOLED结构,其经过彩色滤光片后的红/绿/蓝三原色均具有较高的发光效率。
本发明的另一目的在于提供一种COA型WOLED的制作方法,能够提高经过彩色滤光片后的红/绿/蓝三原色的发光效率,提高COA型WOLED器件的亮度。
为实现上述目的,本发明提供一种COA型WOLED结构,包括红色子像素区域、绿色子像素区域、及蓝色子像素区域;
所述红色子像素区域、绿色子像素区域、及蓝色子像素区域分别包括基板、设于所述基板上的栅极、设于所述栅极上的栅极绝缘层、设于所述栅极绝缘层上的岛状氧化物半导体层、设于所述氧化物半导体层上的岛状蚀刻阻挡层、设于所述蚀刻阻挡层上的源/漏极、设于所述源/漏极上的钝化保护层、设于所述钝化保护层上的红/绿/蓝色光阻层、设于所述钝化保护层上覆盖所述红/绿/蓝色光阻层的平坦层、设于所述平坦层上并经由过孔与所述源/漏极相接触的半反射层、设于所述半反射层上的阳极层、设于所述阳极层上的像素定义层、设于所述像素定义层上的光阻间隔物、设于所述阳极层与像素定义层上的白光发光层、设于所述白光发光层上的阴极层、及设于所述阴极层上的封装盖板;
所述红色子像素区域的阳极层的厚度大于所述绿色子像素区域的阳极层的厚度,所述绿色子像素区域的阳极层的厚度大于所述蓝色子像素区域的阳极层的厚度。
所述半反射层的材料为银或铜或二者的合金,所述阴极层的材料为铝。
所述半反射层的厚度为1~100nm。
所述红色子像素区域的阳极层的厚度为20~300nm,所述绿色子像素区域的阳极层的厚度为20~250nm,所述蓝色子像素区域的阳极层的厚度为20~200nm。
所述氧化物半导体层的材料为铟镓锌氧化物,所述阳极层的材料为氧化铟锡。
本发明还提供一种COA型WOLED的制作方法,包括如下步骤:
步骤1、提供基板,在所述基板上分别对应红色子像素区域、绿色子像素区域、及蓝色子像素区域,依次形成栅极、栅极绝缘层、氧化物半导体层、蚀刻阻挡层、源/漏极、钝化保护层、红/绿/蓝色光阻层、平坦层、及过孔;
步骤2、在所述平坦层上分别对应所述红/绿/蓝色光阻层的上方形成半反射层,所述半反射层经由所述过孔与所述源/漏极相接触;
步骤3、分别在红色子像素区域与绿色子像素区域所对应的半反射层上形成阳极层;
步骤4、在所述平坦层上再次沉积阳极层,所述阳极层覆盖蓝色子像素区域的半反射层;
步骤5、在所述红色子像素区域与蓝色子像素区域的半反射层上所对应的阳极层上形成光阻层;
步骤6、对所述阳极层进行蚀刻,控制刻蚀条件,对绿色子像素区域的阳极层进行部分刻蚀,并剥离光阻层,得到分别位于绿色子像素区域与蓝色子像素区域的阳极层;
步骤7、在所述阳极层上形成像素定义层,并在所述像素定义层上形成光阻间隔物;
步骤8、在所述阳极层与像素定义层上,于所述光阻间隔物之间形成白光发光层;
步骤9、在所述光阻间隔物与白光发光层上形成阴极层;
步骤10、在所述阴极层上设置封装盖板,对COA型WOLED进行封装,从而完成COA型WOLED的制作。
所述步骤2采用物理气相沉积、黄光、及蚀刻制程形成所述半反射层。
所述步骤3采用物理气相沉积、黄光、及蚀刻制程形成所述阳极层。
所述步骤9采用蒸镀方法形成所述白光发光层。
所述半反射层的材料为银或铜或二者的合金,所述阴极层的材料为铝,所述氧化物半导体层的材料为铟镓锌氧化物,所述阳极层的材料为氧化铟锡。
本发明的有益效果:本发明的COA型WOLED结构,其平坦层上设有半透明金属层作为半反射层,并且红/绿/蓝色光阻层上所对应的阳极层具有不同的厚度,形成针对不同光色的最优化的微腔结构,从而利用阴阳极之间产生微腔共振效应,有效提高经过彩色滤光片后的红/绿/蓝三原色的发光效率。本发明的COA型WOLED的制作方法,通过在平坦层上形成金属层作为半反射层,利用阴阳极之间产生微腔共振效应,并通过控制红/绿/蓝色光阻层上所对应的阳极层的厚度,以分别得到针对不同光色的最优化的微腔长度,从而提高经过彩色滤光片后的红/绿/蓝三原色的发光效率,有效提高COA型WOLED器件的亮度。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
附图中,
图1为一种现有COA型WOLED结构的剖面示意图;
图2为本发明COA型WOLED结构的红/绿/蓝色子像素区域的剖面示意图;
图3为本发明COA型WOLED结构的剖面示意图;
图4为本发明COA型WOLED的制作方法的流程图;
图5为本发明COA型WOLED的制作方法的步骤1的示意图;
图6为本发明COA型WOLED的制作方法的步骤2的示意图;
图7为本发明COA型WOLED的制作方法的步骤3的示意图;
图8为本发明COA型WOLED的制作方法的步骤4的示意图;
图9为本发明COA型WOLED的制作方法的步骤5的示意图;
图10为本发明COA型WOLED的制作方法的步骤6的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请同时参阅图2与图3,本发明提供一种COA型WOLED结构,如图3所示,包括红色子像素区域、绿色子像素区域、及蓝色子像素区域。
如图2所示,所述红色子像素区域、绿色子像素区域、及蓝色子像素区域分别包括基板1、设于所述基板1上的栅极2、设于所述栅极2上的栅极绝缘层3、设于所述栅极绝缘层3上的岛状氧化物半导体层4、设于所述氧化物半导体层4上的岛状蚀刻阻挡层5、设于所述蚀刻阻挡层5上的源/漏极6、设于所述源/漏极6上的钝化保护层7、设于所述钝化保护层7上的红/绿/蓝色光阻层71/72/73、设于所述钝化保护层7上覆盖所述红/绿/蓝色光阻层71/72/73的平坦层8、设于所述平坦层8上并经由过孔81与所述源/漏极6相接触的半反射层9、设于所述半反射层9上的阳极层10、设于所述阳极层10上的像素定义层11、设于所述像素定义层11上的光阻间隔物12、设于所述阳极层10与像素定义层11上的白光发光层13、设于所述白光发光层13上的阴极层14、及设于所述阴极层14上的封装盖板15。
所述红色子像素区域的阳极层10的厚度大于所述绿色子像素区域的阳极层10的厚度,所述绿色子像素区域的阳极层10的厚度大于所述蓝色子像素区域的阳极层10的厚度。
优选的,所述半反射层9的材料为银或铜等穿透率较高的金属或者合金,所述阴极层14的材料为铝,其作为反射层。优选的,所述半反射层9的厚度为1~100nm。
所述红色子像素区域的阳极层10的厚度为20~300nm,所述绿色子像素区域的阳极层10的厚度为20~250nm,所述蓝色子像素区域的阳极层10的厚度为20~200nm。
优选的,所述氧化物半导体层4的材料为IGZO(氧化铟镓锌),所述阳极层10的材料为ITO(氧化铟锡)。
在上述COA型WOLED结构中,其平坦层上设有半透明金属层作为半反射层,并且红/绿/蓝色光阻层上所对应的阳极层10具有不同的厚度,形成针对不同光色的最优化的微腔结构,从而利用阴阳极之间产生微腔共振效应,有效提高经过彩色滤光片的红/绿/蓝三原色的发光效率。
请参阅图4,本发明还提供一种COA型WOLED的制作方法,包括如下步骤:
步骤1、如图5所示,提供基板1,在所述基板1上分别对应红色子像素区域、绿色子像素区域、及蓝色子像素区域,依次形成栅极2、栅极绝缘层3、氧化物半导体层4、蚀刻阻挡层5、源/漏极6、钝化保护层7、红/绿/蓝色光阻层71/72/73、平坦层8、及过孔81。
优选的,所述氧化物半导体层4的材料为IGZO(氧化铟镓锌)。
步骤2、如图6所示,在所述平坦层8上分别对应所述红/绿/蓝色光阻层71/72/73的上方形成半反射层9,所述半反射层9经由所述过孔81与所述源/漏极6相接触。
具体地,采用物理气相沉积、黄光、及蚀刻制程形成所述半反射层9。
优选的,所述半反射层9的材料为银或铜等穿透率较高的金属或者合金,所述阴极层14的材料为铝,其作为反射层。
步骤3、如图7所示,分别在红色子像素区域与绿色子像素区域所对应的半反射层9上形成阳极层10。
优选的,所述阳极层10的材料为ITO(氧化铟锡)。
具体地,采用物理气相沉积、黄光、及蚀刻制程形成所述阳极层。
步骤4、如图8所示,在所述平坦层8上再次沉积阳极层,所述阳极层覆盖蓝色子像素区域的半反射层9。
步骤5、如图9所示,在所述红色子像素区域与蓝色子像素区域的半反射层9上所对应的阳极层上形成光阻层70。
步骤6、如图10所示,对所述阳极层进行蚀刻,控制刻蚀条件,对绿色子像素区域的阳极层进行部分刻蚀,并剥离光阻层70,得到分别位于红色子像素区域、绿色子像素区域与蓝色子像素区域的阳极层10。
此时得到的位于红色子像素区域、绿色子像素区域、及蓝色子像素区域的阳极层10分别具有不同的厚度,具体的,所述红色子像素区域的阳极层10的厚度大于所述绿色子像素区域的阳极层10的厚度,所述绿色子像素区域的阳极层10的厚度大于所述蓝色子像素区域的阳极层10的厚度。
步骤7、在所述阳极层10上形成像素定义层11,并在所述像素定义层11上形成光阻间隔物12。
步骤8、在所述阳极层10与像素定义层11上,于所述光阻间隔物12之间形成白光发光层13。
具体地,采用蒸镀方法形成所述白光发光层13。
步骤9、在所述光阻间隔物12与白光发光层13上形成阴极层14。
优选的,所述阴极层14的材料为铝,其作为反射层。
步骤10、在所述阴极层14上设置封装盖板15,对COA型WOLED进行封装,从而完成COA型WOLED的制作。
在上述COA型WOLED的制作方法中,通过在平坦层上形成半透明金属层作为半反射层,利用阴阳极之间产生微腔共振效应,并通过控制红/绿/蓝色光阻层上所对应的阳极层的厚度,以分别得到针对不同光色的最优化的微腔长度,从而提高经过彩色滤光片的红/绿/蓝三原色的发光效率。
综上所述,本发明的COA型WOLED结构,其平坦层上设有半透明金属层作为半反射层,并且红/绿/蓝色光阻层上所对应的阳极层具有不同的厚度,形成针对不同光色的最优化的微腔结构,从而利用阴阳极之间产生微腔共振效应,有效提高经过彩色滤光片后的红/绿/蓝三原色的发光效率。本发明的COA型WOLED的制作方法,通过在平坦层上形成金属层作为半反射层,利用阴阳极之间产生微腔共振效应,并通过控制红/绿/蓝色光阻层上所对应的阳极层的厚度,以分别得到针对不同光色的最优化的微腔长度,从而提高经过彩色滤光片后的红/绿/蓝三原色的发光效率,有效提高COA型WOLED器件的亮度。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (6)
1.一种COA型WOLED结构,其特征在于,包括红色子像素区域、绿色子像素区域、及蓝色子像素区域;
所述红色子像素区域、绿色子像素区域、及蓝色子像素区域分别包括基板(1)、设于所述基板(1)上的栅极(2)、设于所述栅极(2)上的栅极绝缘层(3)、设于所述栅极绝缘层(3)上的岛状氧化物半导体层(4)、设于所述氧化物半导体层(4)上的岛状蚀刻阻挡层(5)、设于所述蚀刻阻挡层(5)上的源/漏极(6)、设于所述源/漏极(6)上的钝化保护层(7)、设于所述钝化保护层(7)上的红/绿/蓝色光阻层(71/72/73)、设于所述钝化保护层(7)上覆盖所述红/绿/蓝色光阻层(71/72/73)的平坦层(8)、设于所述平坦层(8)上并经由过孔(81)与所述源/漏极(6)相接触的半反射层(9)、设于所述半反射层(9)上的阳极层(10)、设于所述阳极层(10)上的像素定义层(11)、设于所述像素定义层(11)上的光阻间隔物(12)、设于所述阳极层(10)与像素定义层(11)上的白光发光层(13)、设于所述白光发光层(13)上的阴极层(14)、及设于所述阴极层(14)上的封装盖板(15);
所述红色子像素区域的阳极层(10)的厚度大于所述绿色子像素区域的阳极层(10)的厚度,所述绿色子像素区域的阳极层(10)的厚度大于所述蓝色子像素区域的阳极层(10)的厚度;
所述半反射层(9)的材料为银或铜或二者的合金,所述阴极层(14)的材料为铝;
所述氧化物半导体层(4)的材料为氧化铟镓锌,所述阳极层(10)的材料为氧化铟锡。
2.如权利要求1所述的COA型WOLED结构,其特征在于,所述半反射层(9)的厚度为1~100nm。
3.如权利要求1所述的COA型WOLED结构,其特征在于,所述红色子像素区域的阳极层(10)的厚度为20~300nm,所述绿色子像素区域的阳极层(10)的厚度为20~250nm,所述蓝色子像素区域的阳极层(10)的厚度为20~200nm。
4.一种COA型WOLED的制作方法,其特征在于,包括如下步骤:
步骤1、提供基板(1),在所述基板(1)上分别对应红色子像素区域、绿色子像素区域、及蓝色子像素区域,依次形成栅极(2)、栅极绝缘层(3)、氧化物半导体层(4)、蚀刻阻挡层(5)、源/漏极(6)、钝化保护层(7)、红/绿/蓝色光阻层(71/72/73)、平坦层(8)、及过孔(81);
步骤2、在所述平坦层(8)上分别对应所述红/绿/蓝色光阻层(71/72/73)的上方形成半反射层(9),所述半反射层(9)经由所述过孔(81)与所述源/漏极(6)相接触;
步骤3、分别在红色子像素区域与绿色子像素区域所对应的半反射层(9)上形成阳极层;
步骤4、在所述平坦层(8)上再次沉积阳极层,所述阳极层覆盖蓝色子像素区域的半反射层(9);
步骤5、在所述红色子像素区域与蓝色子像素区域的半反射层(9)上所对应的阳极层上形成光阻层(70);
步骤6、对所述阳极层进行蚀刻,控制刻蚀条件,对绿色子像素区域的阳极层进行部分刻蚀,并剥离光阻层(70),得到分别位于红色子像素区域、绿色子像素区域与蓝色子像素区域的阳极层(10);
所述红色子像素区域的阳极层(10)的厚度大于所述绿色子像素区域的阳极层(10)的厚度,所述绿色子像素区域的阳极层(10)的厚度大于所述蓝色子像素区域的阳极层(10)的厚度;
步骤7、在所述阳极层(10)上形成像素定义层(11),并在所述像素定义层(11)上形成光阻间隔物(12);
步骤8、在所述阳极层(10)与像素定义层(11)上,于所述光阻间隔物(12)之间形成白光发光层(13);
步骤9、在所述光阻间隔物(12)与白光发光层(13)上形成阴极层(14);
步骤10、在所述阴极层(14)上设置封装盖板(15),对COA型WOLED进行封装,从而完成COA型WOLED的制作;
所述半反射层(9)的材料为银或铜或二者的合金,所述阴极层(14)的材料为铝,所述氧化物半导体层(4)的材料为铟镓锌氧化物,所述阳极层(10)的材料为氧化铟锡;
所述步骤2采用物理气相沉积、黄光、及蚀刻制程形成所述半反射层(9)。
5.如权利要求4所述的COA型WOLED的制作方法,其特征在于,所述步骤3采用物理气相沉积、黄光、及蚀刻制程形成所述阳极层(10)。
6.如权利要求4所述的COA型WOLED的制作方法,其特征在于,所述步骤9采用蒸镀方法形成所述白光发光层(13)。
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CN101415281A (zh) * | 2007-10-18 | 2009-04-22 | 精工爱普生株式会社 | 发光装置及电子设备 |
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