EP0713235B1 - Mikromechanisches elektrostatisches Relais - Google Patents
Mikromechanisches elektrostatisches Relais Download PDFInfo
- Publication number
- EP0713235B1 EP0713235B1 EP95115647A EP95115647A EP0713235B1 EP 0713235 B1 EP0713235 B1 EP 0713235B1 EP 95115647 A EP95115647 A EP 95115647A EP 95115647 A EP95115647 A EP 95115647A EP 0713235 B1 EP0713235 B1 EP 0713235B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- spring tongue
- spring
- armature
- contact
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 31
- 230000000284 resting effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 238000000418 atomic force spectrum Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
- H01H2059/0081—Electrostatic relays; Electro-adhesion relays making use of micromechanics with a tapered air-gap between fixed and movable electrodes
Definitions
- Such a micromechanical relay is already from the DE 42 05 029 C1 known.
- can be such a relay structure for example, from a crystalline Manufacture semiconductor substrate, preferably silicon, the spring tongue serving as anchor by corresponding Doping and etching processes worked out of the semiconductor substrate becomes.
- a crystalline Manufacture semiconductor substrate preferably silicon
- the spring tongue serving as anchor by corresponding Doping and etching processes worked out of the semiconductor substrate becomes.
- how to get in the spring tongue through a multi-layer structure can produce a homogeneous curvature, the different Layers due to their different coefficients of expansion and deposition temperatures against each other be tense.
- the curved spring tongue with her accordingly curved armature electrode thus forms a wedge-shaped Air gap opposite a flat base electrode on one flat base substrate, which is also made, for example Silicon or glass can consist.
- the object of the invention is a micromechanical relay of the type mentioned so that it is a Receives switching characteristics with clear tipping behavior, that the creeping switching behavior mentioned above is avoided becomes.
- this object is achieved in that the wedge-shaped air gap between the electrodes at least one has geometric discontinuity.
- the Spring tongue one in the area of the connection to the armature substrate beginning, continuously curved section and then a straight section towards its free end, the length of the curved portion is preferably about Can be 20 to 40% of the total length of the spring tongue.
- the spring tongue initially rolls over their curved section steadily off the base electrode, until the transition to the straight section is reached.
- the armature contact piece abruptly on the Base contact piece strikes.
- the start of the electrode surface is offset from an offset the connection of the spring tongue to the armature substrate, whose Length preferably 20 to 40% of the total length of the spring tongue can be.
- the Spring tongue continuously curved over its entire length be, while the discontinuity now by the transferred Start of the electrode is generated on the spring tongue.
- an abrupt switching behavior can be generated that the base electrode is opposite the armature electrode a predetermined at the connection point of the spring tongue Gap, the height of which is at least 10% of the total deflection of the free spring end compared to the base substrate in the idle state is.
- This height of the gap which is preferred between 10 and 20% of the spring deflection mentioned can be much larger than the thickness of an insulating layer, the necessary insulation between the two Electrodes are always required at the clamping point is.
- To generate the contact force is at the free end of the spring tongue in a manner known per se, partially through slots cut-out contact spring area formed on which Anchor contact piece is arranged. The distance between the two contact pieces less than the distance between the two electrodes in the area of the free spring end. If the contact spring area is cut free in the middle, So the armature electrode on two side tabs next to the contact spring area lie flat on the base electrode while the contact spring area due to the raised contact pieces is bent and thus generates the contact force.
- FIG. 1 shows schematically the basic structure of a micromechanical electrostatic relay, in which the invention is used.
- An armature spring tongue 2 is machined on an armature substrate 1, preferably a silicon wafer, within a correspondingly doped silicon layer by selective etching processes.
- a double layer 4 is produced on the underside of the spring tongue, which in the example consists of an SiO 2 layer, which generates compressive stresses, and an Si 3 N 4 layer, which generates tensile stresses.
- the spring tongue can be given a desired curvature by appropriate selection of the layer thicknesses.
- the spring tongue has a metallic layer as an anchor electrode 5 on its underside. As can be seen in FIG. 2, this armature electrode 5 is divided into two in order to form a metallic feed line 6 for an armature contact piece 7 in the middle of the spring tongue.
- the armature substrate 1 attached to a base substrate 10, which in the present Example is made of Pyrex glass, but this is also for example could be formed from silicon.
- the base substrate 10 On its flat surface the base substrate 10 carries a base electrode 11 and a Insulating layer 12 to the base electrode 11 opposite the Isolate armature electrode 5.
- a base contact piece 13 is provided with a feed line in a manner not shown and of course insulated from the base electrode 11 arranged.
- a wedge-shaped air gap 14 is formed between the curved spring tongue 2 with the armature electrode 5 on the one hand and the base electrode 11 on the other a wedge-shaped air gap 14 is formed. With concerns a voltage from a voltage source 15 between the two electrodes 5 and 11 roll the spring tongue on the Base electrode 11, whereby the armature contact piece 7 with the Base contact piece 13 is connected.
- FIGS. 1 and 2 The size relationships and layer thicknesses are shown in FIGS. 1 and 2 only from the point of view of clarity and do not correspond to the actual conditions.
- a structure was chosen that had approximately the following dimensions: Spring tongue length (2) 1300 ⁇ m Spring tongue width (2) 1000 ⁇ m Spring tongue thickness (Si layer) (2) 10 ⁇ m SiO 2 layer thickness (4) 500 nm Si 3 N 4 layer thickness (4) 50 nm Length of the slots (8) 500 ⁇ m Deflection of tongue end to base electrode approx. 11 ⁇ m
- FIG. 3 are the switching characteristics of a structure according to Figure 1 with a continuously curved spring tongue depending on the control voltage shown.
- the distance is in FIG. 3a A of the spring tongue shown by the base electrode.
- the curve a24 shows the course of the distance of the contact spring area (at point 24) from the base electrode, while curve a25 the corresponding distance profile of the spring tongue in the fork point 25 between the contact spring area and the armature electrode area (End of slots 8) shows.
- the spring tongue is constantly on the base substrate or approximates the base electrode until at about 8.5 V. the contact is closed; the contact spring area of the spring tongue is then the height of the contact pieces from the base electrode removed (about 4 ⁇ m).
- FIG 4 a spring tongue 41 is shown schematically, the connection a steadily curved section at its clamping point 42 with radius R and then up to free end has a straight portion 43. Otherwise the structure is comparable to that of Figure 1.
- the anchor electrode 5 and the base electrode 11 each extend over the full length of the spring tongue.
- Figure 4b shows the spring tongue 41 in the tightened state, the contact pieces lie on top of each other and by the deflection of the part cut contact spring area 9 the contact force is produced. (Between base substrate and anchor substrate is 4, 6 and 8 each show a small distance, which is really just the thickness of one Insulation layer is limited!)
- FIG. 4 The switching characteristic of an arrangement according to FIG. 4 is in Figure 5a and 5b can be seen.
- Figure 5b also shows the course of the contact force F as a function of the control voltage (curve f4).
- a switching characteristic with hysteresis is shown and clear tipping processes both when closing and when opening the contact. Up to the response voltage of about 12 V the spring moves in a quadratic dependence from the tension by about 10 to 20% of the initial deflection and switches after the response voltage is exceeded abruptly through. The relapse occurs at about 4 V.
- FIG. 6 shows an embodiment of a spring tongue 61, at which the geometric discontinuity in an offset of the Electrodes.
- the armature electrode 62 begins in this Case not like the previously shown anchor electrode 5 on the Clamping point or connection point of the spring tongue on the armature substrate 1, but has an offset L with respect to this Connection point on.
- the beginning of the Base electrode 63 may be offset by the amount L without it it depends.
- FIG. 6a shows the idle state of the arrangement, thus without control voltage, while Figure 6b the tightened State, i.e. when a control voltage is applied between the Electrodes 62 and 63.
- Figure 7 shows the sequence of movements at contact point 64 at the end the spring tongue 61 (curve a64) and in Figure 7b the course the contact force (curve f6).
- the active electrode area is reduced that the response voltage is increased compared to Figure 3; in the example of the simulation it is approximately 18 V. How one can see from FIGS. 7a and 7b, one also achieves at the design of Figure 6 clear tilt conditions.
- the offset length L should be in the range of 20 to 40% of the length the spring tongue 61 can be selected.
- FIG. 8 Another embodiment of a spring tongue with discontinuity is shown in Figure 8.
- a spring tongue 81 with a continuous curvature over its entire length Length and with a running along its entire length Armature electrode 82 is provided.
- the geometric discontinuity is that the base electrode 83 by a distance d is shifted downward in the base substrate 10, so that compared to the clamping point of the spring tongue 81, a gap of the thickness d arises.
- FIG. 9a 84 (curve a84) and at fork 85 (curve a85), similar the representation in Figure 5.
- Figure 9b Contact force curve shown (curve f8).
Landscapes
- Micromachines (AREA)
- Drying Of Semiconductors (AREA)
Description
Länge der Federzunge (2) | 1300 µm |
Breite der Federzunge (2) | 1000 µm |
Dicke der Federzunge (Si-Schicht) (2) | 10 µm |
SiO2-Schichtdicke (4) | 500 nm |
Si3N4-Schichtdicke(4) | 50 nm |
Länge der Schlitze (8) | 500 µm |
Auslenkung Zungenende zur Basiselektrode ca. | 11 µm |
Claims (9)
- Mikromechanisches elektrostatisches Relais mit einem Basissubstrat (10), das eine Basis-Elektrodenschicht (11; 63, 83) und mindestens ein Basis-Kontaktstück (13) trägt, und mit einem auf dem Basissubstrat liegenden Ankersubstrat (1) mit mindestens einer freigearbeiteten, einseitig angebundenen Anker-Federzunge(2; 41, 61, 81), welche eine Anker-Elektrodenschicht (5; 62, 82) und an ihrem freien Ende ein Anker-Kontaktstück (7) trägt,
wobei die Federzunge (2; 41; 61; 81) im Ruhezustand durch eine stetige Krümmung vom Basissubstrat (10) weg gebogen ist, so daß die beiden Elektroden (5, 11; 62, 63; 82, 83) einen keilförmigen Luftspalt (14) zwischen einander bilden und wobei sich die Federzunge (2; 41; 61; 81) im Arbeitszustand bei Anliegen einer Spannung zwischen den Elektroden an das Basissubstrat (10) anschmiegt und die beiden Kontaktstücke (7, 13) aufeinanderliegen, dadurch gekennzeichnet, daß der keilförmige Luftspalt (14) zwischen den Elektroden mindestens eine geometrische Diskontinuität aufweist. - Relais nach Anspruch 1, dadurch gekennzeichnet, daß die Federzunge (41) einen im Bereich der Anbindung am Ankersubstrat beginnenden, stetig gekrümmten Abschnitt (42) und daran anschließend zu ihrem freien Ende hin einen geraden Abschnitt (43) aufweist.
- Relais nach Anspruch 2, dadurch gekennzeichnet, daß die Länge des gekrümmten Abschnittes (42) etwa 20 bis 40 % der Gesamtlänge der Federzunge (41) beträgt.
- Relais nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß der Beginn der Elektrodenfläche (62) einen Versatz (L) gegenüber der Anbindung der Federzunge (61) am Ankersubstrat (1) aufweist.
- Relais nach Anspruch 4, dadurch gekennzeichnet, daß die Länge des Versatzes (L) der Elektrode (62) etwa 20 bis 40 % der Gesamtlänge der Federzunge (61) beträgt.
- Relais nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß die Basiselektrode (83) gegenüber der Ankerelektrode (82) an der Anbindungsstelle der Federzunge einen vorgegebenen Spalt (d) aufweist, dessen Höhe mindestens 10 % der Gesamtauslenkung des freien Federendes gegenüber dem Basissubstrat im Ruhezustand beträgt.
- Relais nach Anspruch 6, dadurch gekennzeichnet, daß die Höhe des Spaltes (d) zwischen 10 und 20 % der Gesamtauslenkung des freien Federendes gegenüber dem Basissubstrat (10) im Ruhezustand beträgt.
- Relais nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, daß die Federzunge (2; 41; 61; 81) an ihrem freien Ende einen durch Schlitze (8) teilweise freigeschnittenen Kontaktfederbereich (9) bildet, auf dem das Ankerkontaktstück (7) angeordnet ist, und daß der Abstand zwischen den beiden Kontaktstücken (7, 13) geringer ist als der Abstand zwischen den beiden Elektroden (5, 11) im Bereich des freien Federendes.
- Relais nach Anspruch 8, dadurch gekennzeichnet, daß der Kontaktfederbereich (9) mittig der Kontaktfederbreite durch zwei vom freien Ende her parallel zu den Seitenkanten der Federzunge verlaufende Schlitze (8) gebildet ist, deren Länge etwa 20 % bis 50 % der Gesamtlänge der Federzunge (2) beträgt.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4437261A DE4437261C1 (de) | 1994-10-18 | 1994-10-18 | Mikromechanisches elektrostatisches Relais |
DE4437261 | 1994-10-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0713235A1 EP0713235A1 (de) | 1996-05-22 |
EP0713235B1 true EP0713235B1 (de) | 1998-02-25 |
Family
ID=6531106
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP95115647A Expired - Lifetime EP0713235B1 (de) | 1994-10-18 | 1995-10-04 | Mikromechanisches elektrostatisches Relais |
Country Status (4)
Country | Link |
---|---|
US (1) | US5629565A (de) |
EP (1) | EP0713235B1 (de) |
JP (1) | JPH08255546A (de) |
DE (2) | DE4437261C1 (de) |
Families Citing this family (51)
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US6043563A (en) * | 1997-05-06 | 2000-03-28 | Formfactor, Inc. | Electronic components with terminals and spring contact elements extending from areas which are remote from the terminals |
DE29613790U1 (de) * | 1996-08-09 | 1996-09-26 | Festo Kg, 73734 Esslingen | Mikroschalter |
DE19730715C1 (de) * | 1996-11-12 | 1998-11-26 | Fraunhofer Ges Forschung | Verfahren zum Herstellen eines mikromechanischen Relais |
DE19646667C2 (de) * | 1996-11-12 | 1998-11-12 | Fraunhofer Ges Forschung | Verfahren zum Herstellen eines mikromechanischen Relais |
DE19736674C1 (de) * | 1997-08-22 | 1998-11-26 | Siemens Ag | Mikromechanisches elektrostatisches Relais und Verfahren zu dessen Herstellung |
JP3493974B2 (ja) * | 1997-10-01 | 2004-02-03 | オムロン株式会社 | 静電マイクロリレー |
US6115231A (en) * | 1997-11-25 | 2000-09-05 | Tdk Corporation | Electrostatic relay |
US6054659A (en) * | 1998-03-09 | 2000-04-25 | General Motors Corporation | Integrated electrostatically-actuated micromachined all-metal micro-relays |
US6320145B1 (en) * | 1998-03-31 | 2001-11-20 | California Institute Of Technology | Fabricating and using a micromachined magnetostatic relay or switch |
US6046659A (en) * | 1998-05-15 | 2000-04-04 | Hughes Electronics Corporation | Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications |
DE19823690C1 (de) * | 1998-05-27 | 2000-01-05 | Siemens Ag | Mikromechanisches elektrostatisches Relais |
US6535722B1 (en) | 1998-07-09 | 2003-03-18 | Sarnoff Corporation | Television tuner employing micro-electro-mechanically-switched tuning matrix |
US6180975B1 (en) * | 1998-10-30 | 2001-01-30 | International Business Machines Corporation | Depletion strap semiconductor memory device |
DE69938511T2 (de) | 1999-02-04 | 2009-05-07 | Institute Of Microelectronics | Mikro-relais |
US6236491B1 (en) | 1999-05-27 | 2001-05-22 | Mcnc | Micromachined electrostatic actuator with air gap |
US6229683B1 (en) * | 1999-06-30 | 2001-05-08 | Mcnc | High voltage micromachined electrostatic switch |
US6057520A (en) * | 1999-06-30 | 2000-05-02 | Mcnc | Arc resistant high voltage micromachined electrostatic switch |
DE19935819B4 (de) | 1999-07-29 | 2004-08-05 | Tyco Electronics Logistics Ag | Relais und Verfahren zu dessen Herstellung |
US6275320B1 (en) | 1999-09-27 | 2001-08-14 | Jds Uniphase, Inc. | MEMS variable optical attenuator |
US6373682B1 (en) | 1999-12-15 | 2002-04-16 | Mcnc | Electrostatically controlled variable capacitor |
US6388359B1 (en) * | 2000-03-03 | 2002-05-14 | Optical Coating Laboratory, Inc. | Method of actuating MEMS switches |
US6396677B1 (en) * | 2000-05-17 | 2002-05-28 | Xerox Corporation | Photolithographically-patterned variable capacitor structures and method of making |
US6407478B1 (en) * | 2000-08-21 | 2002-06-18 | Jds Uniphase Corporation | Switches and switching arrays that use microelectromechanical devices having one or more beam members that are responsive to temperature |
US6485273B1 (en) | 2000-09-01 | 2002-11-26 | Mcnc | Distributed MEMS electrostatic pumping devices |
JP2002075156A (ja) | 2000-09-01 | 2002-03-15 | Nec Corp | マイクロスイッチおよびその製造方法 |
US6590267B1 (en) | 2000-09-14 | 2003-07-08 | Mcnc | Microelectromechanical flexible membrane electrostatic valve device and related fabrication methods |
US6377438B1 (en) | 2000-10-23 | 2002-04-23 | Mcnc | Hybrid microelectromechanical system tunable capacitor and associated fabrication methods |
US6396620B1 (en) | 2000-10-30 | 2002-05-28 | Mcnc | Electrostatically actuated electromagnetic radiation shutter |
WO2002061781A1 (fr) * | 2001-01-30 | 2002-08-08 | Advantest Corporation | Commutateur et dispositif de circuit integre |
US6768403B2 (en) * | 2002-03-12 | 2004-07-27 | Hrl Laboratories, Llc | Torsion spring for electro-mechanical switches and a cantilever-type RF micro-electromechanical switch incorporating the torsion spring |
US6771001B2 (en) | 2001-03-16 | 2004-08-03 | Optical Coating Laboratory, Inc. | Bi-stable electrostatic comb drive with automatic braking |
US6707355B1 (en) | 2001-06-29 | 2004-03-16 | Teravicta Technologies, Inc. | Gradually-actuating micromechanical device |
US6646215B1 (en) | 2001-06-29 | 2003-11-11 | Teravicin Technologies, Inc. | Device adapted to pull a cantilever away from a contact structure |
WO2003028059A1 (en) | 2001-09-21 | 2003-04-03 | Hrl Laboratories, Llc | Mems switches and methods of making same |
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ITTO20011142A1 (it) * | 2001-12-07 | 2003-06-09 | C R F Societa Con Sortile Per | ,,micro-specchio con micro-otturatore a controllo elettrostatico, matrice di micro-specchi e spettrofotometro infrarosso comprendente tale m |
KR101140689B1 (ko) * | 2002-12-10 | 2012-05-03 | 에프코스 아게 | 마이크로-전기-기계 시스템 소자 어레이를 포함하는 전자장치 및 이의 구동 방법 |
US6842055B1 (en) * | 2003-08-13 | 2005-01-11 | Hewlett-Packard Development Company, L.P. | Clock adjustment |
US20050062565A1 (en) * | 2003-09-18 | 2005-03-24 | Chia-Shing Chou | Method of using a metal platform for making a highly reliable and reproducible metal contact micro-relay MEMS switch |
US6962832B2 (en) * | 2004-02-02 | 2005-11-08 | Wireless Mems, Inc. | Fabrication method for making a planar cantilever, low surface leakage, reproducible and reliable metal dimple contact micro-relay MEMS switch |
US7101724B2 (en) * | 2004-02-20 | 2006-09-05 | Wireless Mems, Inc. | Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation |
FR2868591B1 (fr) * | 2004-04-06 | 2006-06-09 | Commissariat Energie Atomique | Microcommutateur a faible tension d'actionnement et faible consommation |
WO2005104717A2 (en) * | 2004-04-23 | 2005-11-10 | Research Triangle Institute | Flexible electrostatic actuator |
US7448412B2 (en) * | 2004-07-23 | 2008-11-11 | Afa Controls Llc | Microvalve assemblies and related structures and related methods |
US7230513B2 (en) * | 2004-11-20 | 2007-06-12 | Wireless Mems, Inc. | Planarized structure for a reliable metal-to-metal contact micro-relay MEMS switch |
DE102005033801B4 (de) * | 2005-07-13 | 2010-06-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Torsionsfeder für mikromechanische Anwendungen |
US20070046214A1 (en) * | 2005-08-26 | 2007-03-01 | Pasch Nicholas F | Apparatus comprising an array of switches and display |
US8450902B2 (en) * | 2006-08-28 | 2013-05-28 | Xerox Corporation | Electrostatic actuator device having multiple gap heights |
US8120133B2 (en) * | 2006-09-11 | 2012-02-21 | Alcatel Lucent | Micro-actuator and locking switch |
JP4855233B2 (ja) * | 2006-12-07 | 2012-01-18 | 富士通株式会社 | マイクロスイッチング素子およびマイクロスイッチング素子製造方法 |
US20100013033A1 (en) * | 2008-07-18 | 2010-01-21 | Chia-Shing Chou | Enablement of IC devices during assembly |
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SU601771A1 (ru) * | 1976-02-05 | 1978-04-05 | Предприятие П/Я В-8754 | Электростатическое реле |
FR2376548A1 (fr) * | 1977-01-04 | 1978-07-28 | Thomson Csf | Dispositif bistable electrostatique |
GB2095911B (en) * | 1981-03-17 | 1985-02-13 | Standard Telephones Cables Ltd | Electrical switch device |
JPS6046636U (ja) * | 1983-09-05 | 1985-04-02 | オムロン株式会社 | 多極リレ− |
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CA1249620A (en) * | 1985-01-21 | 1989-01-31 | Takashi Oota | Piezoelectric latching actuator having an impact receiving projectile |
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US5258591A (en) * | 1991-10-18 | 1993-11-02 | Westinghouse Electric Corp. | Low inductance cantilever switch |
DE4205029C1 (en) * | 1992-02-19 | 1993-02-11 | Siemens Ag, 8000 Muenchen, De | Micro-mechanical electrostatic relay - has tongue-shaped armature etched from surface of silicon@ substrate |
JP3402642B2 (ja) * | 1993-01-26 | 2003-05-06 | 松下電工株式会社 | 静電駆動型リレー |
US5367136A (en) * | 1993-07-26 | 1994-11-22 | Westinghouse Electric Corp. | Non-contact two position microeletronic cantilever switch |
-
1994
- 1994-10-18 DE DE4437261A patent/DE4437261C1/de not_active Expired - Fee Related
-
1995
- 1995-10-03 US US08/538,440 patent/US5629565A/en not_active Expired - Fee Related
- 1995-10-04 EP EP95115647A patent/EP0713235B1/de not_active Expired - Lifetime
- 1995-10-04 DE DE59501491T patent/DE59501491D1/de not_active Expired - Fee Related
- 1995-10-18 JP JP7269818A patent/JPH08255546A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0713235A1 (de) | 1996-05-22 |
US5629565A (en) | 1997-05-13 |
JPH08255546A (ja) | 1996-10-01 |
DE4437261C1 (de) | 1995-10-19 |
DE59501491D1 (de) | 1998-04-02 |
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