Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/022—Quinonediazides
  • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
  • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides

Definitions

• the present invention relates to radiation sensitive mixtures (e.g., those particularly useful as positive-working resist compositions) containing the admixture of an alkali-soluble binder resin, a photoactive compound and an effective sensitivity enhancing amount of at least one polylactide compound all dissolved in a solvent. Furthermore, the present invention also relates to substrates coated with these radiation sensitive mixtures as well as the process of coating, imaging and developing these radiation sensitive mixtures on these substrates.
• radiation sensitive mixtures e.g., those particularly useful as positive-working resist compositions
• substrates coated with these radiation sensitive mixtures as well as the process of coating, imaging and developing these radiation sensitive mixtures on these substrates.
• Photoresist compositions are used in microlithographic processes for making miniaturized electronic components such as in the fabrication of integrated circuits and printed wiring board circuitry.
• a thin coating or film of a photoresist composition is generally first applied to a substrate material, such as silicon wafers used for making integrated circuits or aluminum or copper plates of printed wiring boards.
• the preferred method of applying this film is spin coating. By this method, much of the solvent in the photoresist formulation is removed by the spinning operation.
• the coated substrate is then baked to evaporate any remaining solvent in the photoresist composition and to fir the coating onto the substrate.
• the baked coated surface of the substrate is next subjected to an image-wise exposure of radiation. This radiation exposure causes a chemical transformation in the exposed areas of the coated surface. Visible light, ultraviolet (UV) light, electron beam, ion beam, and X-ray radiant energy are radiation types commonly used today in microlithographic processes.
• the coated substrate is treated with a developer solution to dissolve and remove either the radiation-exposed or the unexposed areas of the coated surface of the substrate.
• a developer solution to dissolve and remove either the radiation-exposed or the unexposed areas of the coated surface of the substrate.
• photoresist compositions There are two types of photoresist compositions--negative-working and positive-working.
• negative-working photoresist compositions When negative-working photoresist compositions are exposed image-wise to radiation, the areas of the resist composition exposed to the radiation become less soluble to a developer solution (e.g., a cross-linking reaction occurs) while the unexposed areas of the photoresist coating remain relatively soluble to a developing solution.
• a developer solution e.g., a cross-linking reaction occurs
• treatment of an exposed negative-working resist with a developer solution causes removal of the nonexposed areas of the resist coating and the creation of a negative image in the photoresist coating, and thereby uncovering a desired portion of the underlying substrate surface on which the photoresist composition was deposited but not exposed to the radiation.
• Positive-working photoresist compositions are currently favored over negative-working resists because the former generally have better resolution capabilities and pattern transfer characteristics.
• the now partially unprotected substrate may be treated with a substrate-etchant solution or plasma gases and the like.
• This etchant solution or plasma gases etch the portion of the substrate where the photoresist coating was removed during development.
• the areas of the substrate are protected where the photoresist coating still remains and, thus, an etched pattern is created in the substrate material which corresponds to the photo-mask used for the image-wise exposure of the radiation.
• the remaining areas of the photoresist coating may be removed during a stripping operation, leaving a clean etched substrate surface.
• lithographic properties which are critical to positive-working photoresist end-users include the following: (1) good resolution capabilities in both the micron and submicron ranges without incomplete development in the exposed areas (i.e.
• sensitivity enhancers also known as photospeed enhancers or speed enhancers
• resist formulation to increase the solubility of the resist coating in both the exposed and unexposed areas when the speed of development is an overriding processing consideration.
• some degree of contrast may be sacrificed with the addition of such sensitivity enhancers, (e.g. in positive-working resists, while the exposed areas of the resist coating will be more quickly developed, the sensitivity enhancers will also cause a larger loss of the resist coating from the unexposed areas).
• film defects such as pinholes may be introduced into the coating or subsequent plasma etching steps may cause unwanted breakthroughs in the unexposed areas. Accordingly, sensitivity enhancers should provide the desired increased speed of development without too much more film loss in the unexposed areas.
• sensitivity enhancers Numerous compounds have been proposed as sensitivity enhancers in resist compounds. See U.S. Patent Nos. 3,661,582; 4,009,033; 4,036,644; 4,115,128; 4,275,139; 4,365,019; 4,650,745; and 4,738,915 for examples of known sensitivity enhancers. While their known sensitivity enhancers may be suitable for some resist formulation or for some particular end uses, there is a need for new sensitivity enhancers which have better sensitivity enhancement without significant film loss in other resist formulations or in other end uses, or are suitable in a certain combination of resist formulations or a combination of end uses to which the previously known sensitivity enhancers are not suitable. The present invention is believed to be an answer to this need.
• ethyl lactate [CH 3 CH(OH)COO 2 C 2 H 5 ] is a known solvent for positive-working photoresists. In the presence of acidic substances, it forms polylactides [defined as wherein n is from 2 to 10] by the following reaction sequence:
• the present invention is directed to a radiation sensitive composition useful as a positive-working resist comprising an admixture in a solvent of:
• the present invention also encompasses the process of coating substrates with these radiation sensitive mixtures and their exposing and developing these coated substrates.
• the present invention encompasses said coated substrates (both before and after imaging) as novel articles of manufacture.
• the radiation-sensitive compositions of the present invention have three critical ingredients; at least one alkali-soluble binder resin; at least one photoactive compound; and at least one polylactide compound.
• binder resins commonly employed in photoresist compositions may be used herein.
• the preferred class of binder resins is alkali-soluble resin or resins which are useful in positive-working photoresist compositions.
• alkali-soluble binder resin is used herein to mean a resin which will dissolve completely in an aqueous alkaline developing solution conventionally used with positive-working photoresist compositions.
• Suitable alkali-soluble resins include phenolic novolaks such as phenol-formaldehyde novolak resins, cresol-formaldehyde novolak resins, or polyvinyl phenol resins, preferably those having an average molecular weight of about 500 to about 40,000, and more preferably from about 800 to 20,000.
• the novolak resins are preferably prepared by the condensation reaction of phenol or cresols with formaldehyde and are characterized by being light-stable, water-insoluble, alkali-soluble, and film-forming.
• the most preferred class of novolak resins is formed by the condensation reaction between a mixture of meta- and para-cresols with formaldehyde.
• photoactive compounds which make radiation-sensitive mixtures useful as photoresists may be employed herein.
• the preferred class of photoactive compounds (sometimes called “sensitizers") is o-quinonediazide compounds, particularly esters derived from polyhydric phenols, alkyl-polyhydroxyphenones, aryl-polyhydroryphenones, and can contain up to six or more sites for esterification.
• o-quinonediazide esters are derived from 3-diazo-3,4-dihydro-4-oxo-naphthalene-1-sulfonic acid chloride (also know as 1,2-naphthoquinonediazide-4-sulfonyl chloride) and 6-diazo-5,6-dihydro-5-oxo-naphthalene-1-sulfonic acid chloride (also known as 1,2-naphthoquinonediazide-5-sulfonyl chloride).
• resorcinol 1,2-naphthoquinonediazide-4-sulfonic acid esters pyrogallol 1,2-naphthoquinonediazide-5-sulfonic acid esters, 1,2-quinonediazidesulfonic acid esters of (poly)hydroxyphenyl alkyl ketones or (poly)hydroxyphenyl aryl ketones such as 2,4-dihydroxyphenyl propyl ketone 1,2-benzoquinonediazide-4-sulfonic acid esters, 2,4,dihydroxyphenyl hexyl ketone 1,2-naphthoquinonediazide-4-sulfonic acid esters, 2,4-dihydroxybenzophenone 1,2-naphthoquinonediazide-5-sulfonic acid esters, 2,3,4-trihydroxyphenyl hexyl ketone, 1,2-naphthoquinonediazide-4-sulfonic acid esters, 2,3,4-trihydroxyphen
• 1,2-quinonediazide compounds exemplified above
• these materials may be used in combinations of two or more.
• mixtures of substances formed when less than all esterification sites present on a particular polyhydric phenol, alkyl-polyhydroxyphenone, arylpolyhydroxyphenone have combined with o-quinonediazides may be effectively utilized in positive acting photoresists.
• 1,2-quinonediazide compounds mentioned above 1,2-naphthoquinonediazide-5-sulfonic acid di-, tri-, tetra-, penta-, and hera-esters of polyhydroxy compounds having at least 2 hydroxyl groups, i.e., about 2 to 6 hydroxyl groups, are one class of preferred compounds.
• 1,2-naphthoquinonediazide compounds are 2,3,4-trihydroxy-benzophenone 1,2-naphthoquinone-diazide-5-sulfonic acid esters, 2,3,4,4'-tetrahydroxy-benzophenone 1,2-naphthoquinonediazide-5-sulfonic acid esters, and 2,2',4,4'-tetra-hydroxybenzo-phenone 1,2-naphthoquinonediazide-5-sulfonic acid esters.
• Another preferred 1,2-quinonediazide compound is mixed 1,2-naphthoquinonediazide-5-sulfonic acid esters of 2,2'3,3'-tetrahydro-3,3,3',3'-tetramethyl-1,1-spirobi (1H-indene)-5,5'6,6'7,7'-hexol (C.A.S. Reg. No. 32737-33-0).
• 1,2-naphthoquinonediazide compounds may be used alone or in combination of two or more.
• 1,2-naphthoquinone-5-diazide compounds are phenol 1,2-naphthoquinonediazide-5-sulfonic acid ester and bis[4-(2,6-dimethylphenol)]-4-catehol methane 1,2-naphthoquinone-5-diazide sulfonic acid esters.
• Another preferred class of photoactive o-quinonediazide compounds is prepared by condensing spirobiindane or spirobichroman derivatives with 1,2-naphthoquinonediazido-4-sulfonyl chloride or 1,2-naphtho-quinonediazide-5-sulfonyl chloride or a mixture thereof to make compounds of formula (A) shown below: wherein R 1 to R 8 are independently hydrogen, a hydroxyl group, a halogen atom, an alkyl group, an alkoxy group, an aralkyl group, an aryl group, an amino group, a monoalkylamino group, a dialkylamino group, an acylamino group, an alkylcarbamoyl group, an arylcarbamoyl group, an alkylsulfamoyl group, an arylsulfamoyl group, a carboxyl group, a cyano group, a
• the halogen represented by R 1 to R 8 in the formula (A) is preferably chlorine, bromine or iodine.
• the alkyl group is preferably an alkyl group having 1 to 4 carbon atoms, such as methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, sec-butyl and tert-butyl.
• the alkoxy group is preferably an alkoxy group having 1 to 4 carbon atoms, such as methoxy, ethoxy, hydroxyethoxy, propoxy, hydroxypropoxy, isopropoxy, n-butoxy, isobutoxy, sec-butoxy and tert-butoxy.
• the aralkyl group is preferably a benzyl group, a phenethyl group or a benzhydryl group.
• the aryl group is preferably phenyl, tolyl, hydroxyphenyl or naphthyl.
• the monoalkylamino group is preferably a monoalkylamino group having 1 to 4 carbon atoms, such as monomethylamino, monoethylamino, monopropylamino, monoisopropylamino, mono-n-butylamino, monoisobutylamino, mono-sec-butylamino, or mono-tert-butylamino.
• the dialkylamino group is preferably a dialkylamino group with each akyl substituent having 1 to 4 carbon atoms, such as dimethylamino, diethylamino, dipropylamino, di-isopropylamino, di-n-butylamino, di-iso-butylamino, di-sec-butylamino, or di-tert-butylamino.
• the acylamino group is preferably an aliphatic group-substituted acylamino group such as acetylamino, propionylamino, butylamino, isobutylamino, isovalerylamino, pivaloylamino or valerylamino, or an aromatic group-substituted acylamino group such as benzoylamino or toluoylamino.
• the alkylcarbamoyl group is preferably an alkylcarbamoyl group having 2 to 5 carbon atoms, such as methylcarbamoyl, ethylcarbamoyl, propylcarbamoyl, isopropylcarbamoyl, n-butylcarbamoyl, isobutylcarbamoyl, sec-butylcarbamoyl, or tert-butylcarbamoyl.
• the arylcarbamoyl group is preferably phenylcarbamoyl or tolylcarbamoyl.
• the alkylsulfamoyl group is preferably an alkylsulfamoyl group having 1 to 4 carbon atoms, such as methylsulfamoyl, ethylsulfamoyl, propylsulfamoyl, isopropylsulfamoyl, n-butylsulfamoyl, sec-butylsulfamoyl, or tert-butylsulfamoyl.
• the arylsulfamoyl group is preferably phenylsulfamoyl or tolylsulfamoyl.
• the acyl group is preferably an aliphatic acyl group having 1 to 5 carbon atoms, such as formyl, acetyl, propionyl, butyryl, isobutyryl, valeryl, isovaleryl or pivaloyl, or an aromatic acyl group, such as benzoyl, toluoyl, salicyloyl, or naphthoyl.
• the alkyloxycarbonyl group is preferably an alkyloxycarbonyl group having 2 to 5 carbon atoms, such as methoxycarbonyl, ethoxycarbonyl, propoxycarbonyl, isopropoxycarbonyl, n-butoxycarbonyl, isobutoxycarbonyl, sec-butoxycarbonyl, or tert-butoxycarbonyl.
• the aryloxycarbonyl group is preferably phenoxycarbonyl.
• the acyloxy group is preferably an aliphatic acyloxy group having 2 to 5 carbon atoms, such as acetoxy, propionyloxy, butyryloxy, isobutyryloxy, valeryloxy, isovaleryloxy or pivaloyloxy, or an aromatic acyloxy group such as benzoyloxy, toluoyloxy, or naphthoyloxy.
• the lower alkyl group represented by R 9 to R 12 in the formula (A) is preferably an alkyl group having 1 to 4 carbon atoms, such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, or tert-butyl.
• R 1 to R 8 are preferably a hydrogen atom, a hydroxy group or an -OD group wherein D is as defined above, and R 9 to R 12 are preferably a hydrogen atom or a methyl group.
• R is preferably an alkyl group having 1 to 4 carbon atoms, such as a methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, or t-butyl group.
• the proportion of the photoactive compound in the radiation-sensitive mixture may range from 5% to 40%, more preferably from 10% to 25% by weight of the nonvolatile (e.g., nonsolvent) content of the radiation-sensitive mixture.
• the proportion of total binder resin of this present invention in the radiation-sensitive mixture may range from 60% to 95%, preferably, from 75% to 90% by weight, of the nonvolatile (e.g., excluding solvents) content of the radiation-sensitive mixture.
• the third critical ingredient of the radiation-sensitive composition of the present invention is the polylactide compound or mixture of such compounds.
• the preferred proportion of the polylactide compound or compounds in the radiation-sensitive mixture may range from 0.5% to 10%, preferably 2% to 4% by weight of the nonvolatile (e.g., excluding solvents) content of the radiation-sensitive mixture.
• These radiation-sensitive mixtures may also contain, besides the resin, photoactive compound and polylactide compound, conventional photoresist composition ingredients such as other resins, solvents, actinic and contrast dyes, anti-striation agents, plasticizers, and other sensitivity enhancers. These additional ingredients may be added to the binder resin, photoactive compound and polylactide compound solution before the solution is coated onto the substrate.
• conventional photoresist composition ingredients such as other resins, solvents, actinic and contrast dyes, anti-striation agents, plasticizers, and other sensitivity enhancers.
• the binder resin, photoactive compound or sensitizer, and polylactide compound may be dissolved in a solvent or solvents to facilitate their application to the substrate.
• suitable solvents include methoxyacetoxy propane, diglyme, toluene, ethyl cellosolve acetate, n-butyl acetate, ethyl lactate, propylene glycol alkyl ether acetates, or mixtures thereof.
• Cosolvents such as xylene, n-butylacetate, or ethyl ethoxy propionate may also be used.
• the most preferred solvent is ethyl lactate alone or in combination with another solvent (e.g., ethyl 3-ethoxy propionate).
• the preferred amount of solvent may be from 50% to 500%, or higher, by weight, more preferably, from 100% to 400% by weight, based on combined resin, sensitizer, and polylactide compound weight.
• Actinic dyes help provide increased resolution on highly reflective surfaces by inhibiting back scattering of light off the substrate. This back scattering causes the undesirable effect of optical notching, especially on a substrate topography.
• Examples of actinic dyes include those that absorb light energy at approximately 400-460 nm [e.g., Fat Brown B (C.I. No. 12010); Fat Brown RR (C.I. No. 11285); 2-hydroxy-1,4-naphthoquinone (C.I. No. 75480) and Quinoline Yellow A (C.I. No. 47000) and Macrolex Fluoroyellow 10GN (C. I. No. Solvent Yellow 16:1)] and those that absorb light energy at approximately 300-340 nm [e.g., Fat Brown B (C.I. No. 12010); Fat Brown RR (C.I. No. 11285); 2-hydroxy-1,4-naphthoquinone (C.I. No. 75480) and Quinoline Yellow A (C.I. No
• the amount of actinic dyes may be up to 10% weight levels, based on the combined weight of resin and sensitizer.
• Contrast dyes enhance the visibility of the developed images and facilitate pattern alignment during manufacturing.
• contrast dye additives that may be used together with the radiation-sensitive mixtures of the present invention include Solvent Red 24 (C.I. No. 26105), Basic Fuchsin (C.I. 42514), Oil Blue N (C.I. No. 61555) and Calco Red A (C.I. No. 26125) up to 10% weight levels, based on the combined weight of resin and sensitizer.
• Anti-striation agents level out the photoresist coating or film to a uniform thickness. Anti-striation agents may be used up to five percent by weight levels, based on the combined weight of resin and sensitizer.
• One suitable class of anti-striation agents is nonionic silicon-modified polymers. Nonionic surfactants may also be used for this purpose, including, for example, nonylphenoxy poly.
• the photoresist coatings produced by the above described procedure are particularly suitable for application to silicon/silicon dioxide-coated or polysilicon or silicon nitride wafers such as are utilized in the production of microprocessors and other miniaturized integrated circuit components.
• An aluminum/aluminum oxide wafer can be used as well.
• the substrate may also comprise various polymeric resins especially transparent polymers such as polyesters and polyolefins.
• the coated substrate may be preferably baked at approximately 70° to 125°C until substantially all the solvent has evaporated and only a uniform radiation-sensitive coating remains on the substrate.
• the coated substrate can then be exposed to radiation, in any desired exposure pattern, produced by use of suitable masks, negatives, stencils, or templates.
• Conventional imaging process or apparatus currently used in processing photoresist-coated substrates may be employed with the present invention. While ultraviolet (UV) light and electron beam radiations are the preferred sources of radiation, other sources such as visible light, ion beam, and X-ray radiant energy may be instead used.
• UV light and electron beam radiations are the preferred sources of radiation
• other sources such as visible light, ion beam, and X-ray radiant energy may be instead used.
• a post-exposure bake at a temperature of 10°C higher than the soft bake temperature for 30-300 seconds is used to enhance image quality and resolution.
• aqueous alkaline developing solution This solution is preferably agitated, for example, by nitrogen gas agitation.
• aqueous alkaline developers include aqueous solutions of tetramethylammonium hydroxide, sodium hydroxide, potassium hydroxide, ethanolamine, choline, sodium phosphates, sodium carbonate, and sodium metasilicate.
• the preferred developers for this invention are aqueous solutions of either alkali metal hydroxides, phosphates or silicates, or mixtures thereof, or tetramethylammonium hydroxide.
• the substrates are allowed to remain in the developer until all of the resist coating has dissolved from the exposed areas. Normally, development times from about 10 seconds to about 3 minutes are employed.
• the coated wafers in the developing solution are preferably subjected to a deionized water rinse to fully remove the developer or any remaining undesired portions of the coating and to stop further development.
• This rinsing operation (which is part of the development process) may be followed by blow drying with filtered air to remove excess water.
• a post-development heat treatment or bake may then be employed to increase the coating's adhesion and chemical resistance to etching solutions and other substances.
• the post-development heat treatment can comprise the baking of the coating and substrate below the coating's thermal deformation temperature.
• the developed substrates may then be treated with a plasma gas etch employing conventional plasma processing parameters (e.g., pressure and gas flow rates) and conventional plasma equipment.
• plasma processing parameters e.g., pressure and gas flow rates
• the remaining areas of the photoresist coating may be removed from the etched substrate surface by conventional photoresist stripping operations.
• the seven dishes were each heated at 135-145°C for three hours. Various amounts of polymeric residues were formed in these dishes by this heating. These residues were believed to be polylactides formed by the thermal polymerization of ethyl lactate. These residues were separated from the remaining ethyl lactate and the resin material. Each individual separated residue was then weighed. The amount of each residue as a percentage by weight of the original ethyl lactate added to the dish was determined.
• ethyl lactate can be polymerized in the presence of an acidic substance but not in the presence of a basic substance.
• HiPR-6512 positive-working photoresist available from OCG Microelectronic Materials, Inc. of West Paterson, NJ, and varying amounts of polylactide.
• HiPR-6512 contains an alkali-soluble novolak resin and a naphthoquinonediazide sensitizer dissolved in an ethyl lactate:ethyl 3-ethoxy propionate solvent.
• the different formulations include a control with no polylactide addition (Comparison 1); an 0.5% by weight polylactide formulation (Example 8); a 5% by weight polylactide formulation (Example 9); a 10% by weight polylactide formulation (Example 10); and a 20% by weight polylactide formulation (Example 11).
• the five photoresist formulations were each processed on a minimum of five 4 inch diameter base silicon wafers. Each wafer was cleaned with HF vapor primed with HMDS and manually coated with one of the five different formulations.
• the coating track spin speeds were adjusted to achieve a a targeted post softbake thickness of 11,750 ⁇ 50 angstroms (the targeted E max ).
• the targeted E max the targeted post softbake thickness
• each coated wafer was softbaked at 90°C for 60 seconds on a Silicon Valley Group hot plate oven.
• Each wafer was subjected to a 7 x 14 array exposure matrix with 2 mJ/cm 2 energy increments on a Canon g-line stepper. After this exposure operation, each wafer was subjected to a post exposure bake at 115°C for 60 seconds on a Silicon Valley Group hot plate oven.
• Each wafer was then developed at 21°C using HPRD-441 positive developer available from OCG Microelectronic Materials, Inc. of West Paterson, NJ.
• the development process included spraying for 4 seconds at 500 rpm; spraying for 3 seconds at 250 rpm; spraying for 2 seconds at 0 rpm; and puddle develop for 50 seconds.
• E o exposure energy required to clear all resist from an open frame

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• Physics & Mathematics (AREA)
• Spectroscopy & Molecular Physics (AREA)
• General Physics & Mathematics (AREA)
• Photosensitive Polymer And Photoresist Processing (AREA)
• Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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• 1992
  • 1992-03-19 US US07/854,101 patent/US5234789A/en not_active Expired - Fee Related
• 1993
  • 1993-03-17 EP EP93302014A patent/EP0561625B1/en not_active Expired - Lifetime
  • 1993-03-17 DE DE69306020T patent/DE69306020D1/de not_active Expired - Lifetime
  • 1993-03-18 KR KR1019930004133A patent/KR930020218A/ko not_active Application Discontinuation
  • 1993-03-18 JP JP5057633A patent/JPH0683051A/ja active Pending

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