EP0198907A1 - Alteration focalisee d'un substrat - Google Patents

Alteration focalisee d'un substrat

Info

Publication number
EP0198907A1
EP0198907A1 EP19850905574 EP85905574A EP0198907A1 EP 0198907 A1 EP0198907 A1 EP 0198907A1 EP 19850905574 EP19850905574 EP 19850905574 EP 85905574 A EP85905574 A EP 85905574A EP 0198907 A1 EP0198907 A1 EP 0198907A1
Authority
EP
European Patent Office
Prior art keywords
site
substrate
mask
gas
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19850905574
Other languages
German (de)
English (en)
Inventor
Edwin M. Kellogg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ion Beam Systems Inc
Original Assignee
Ion Beam Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ion Beam Systems Inc filed Critical Ion Beam Systems Inc
Publication of EP0198907A1 publication Critical patent/EP0198907A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects

Definitions

  • This invention relates to alteration of a precisely localized site on a substrate, for example, creating an opaque deposit to correct a transparent defect in a photolithographic mask.
  • Photolithographic masks are used to pass light (usually ultraviolet light) to a workpiece in a specified pattern.
  • Such masks often consist of a clear substrate such as glass or quartz onto which a pattern of an opaque material such as chrome has been deposited.
  • a mask may develop or be manufactured with small defects or imperfections, for example pinholes in the chrome layer, that allow exposure of the workpiece in undesired locations.
  • it may be desirable to alter the pattern on the mask, by rendering a previously transparent site opaque.
  • Mask alteration should be effective and durable without complex processing steps that can introduce contaminants or cause further defects.
  • One way to repair mask imperfections involves a lift-off procedure using a positive photoresist.
  • the resist is applied to the affected area, exposed, and developed, after which any resist that was applied to a transparent imperfection is removed.
  • An opaque layer e.g., of aluminum, is deposited over the area, and any of the deposited layer that overlies photoresist is lifted off using a solvent that dissolves the resist.
  • Laser beams are also used to repair photolithographic mask defects, particularly opaque defects, by removing the undesired opaque material.
  • Gamo et al. (1984) Intern. Conf. on Solid State Devices and Materials (Kobe 9/1/84) and Gamo et al. (1984) Japanese J. Appl. Physics 23_(5.) :L293-L295 disclose the use of a focused or broad argon or gold ion beam in an atmosphere of tri ethyl aluminum.
  • the resulting deposited film contains oxygen, carbon, and aluminum in varying ratios.
  • the technique is reported to be promising for mask repair or mask fabrication for optical, ion, or X-ray lithography.
  • Kellogg Ph.D. thesis. University of Pennsylvania, November 1965, discloses a method of making a self-supporting carbon target for helium bombardment by heating a nickel foil substrate in an atmosphere of methyl iodide to deposit a carbon film on the nickel. Hydrogen is released as a gas, and iodine is deposited as an amorphous layer on the walls of the chamber. The nickel is dissolved later to leave a carbon target.
  • __7 millibar (7.5 x 10 torr) range; for example, unwanted buildup from vacuum pump oil occurs when performing ion implantation, ion beam analysis, or experimental nuclear physics. Methane, benzene, rough pump oil, and squalene were bombarded with ion beams of hydrogen, helium, and lithium ions at between 100 and
  • the gases were provided as controlled atmospheres (10 -7 to 10-5 -mbar) by means of a needle ' valve or by means of a small liquid container installed in a vacuum chamber; the container temperature could be varied between -30°C and 40°C, depending on the gas.
  • the residual gas consists mainly of water, nitrogen, carbon dioxide, and argon.
  • the amount of deposited material increases with increasing molecular weight of the gas and with dose rate (between 1.5 x 10 13 and 1 x 10 15.cm-2 seconds-1) .
  • dose rate between 1.5 x 10 13 and 1 x 10 15.cm-2 seconds-1 .
  • the invention features, generally, a method of accurately altering a precisely localized site on a substrate.
  • the method comprises: (1) placing the substrate in a vacuum chamber and forming an image of the site; (2) by means of a liquid metal ion source and associated focusing optics, providing a focused ion beam having a spot size smaller than the site; (3) on the basis of that image, scanning the focused beam over the site in the presence of hydrocarbon gas in a manner to react the hydrocarbon and form a coherent carbonaceous opaque deposit of predetermined desired form, the deposit being adherent to the substrate at the site to render the site opaque.
  • the invention features a method as described above in which hydrogen gas is used rather than a hydrocarbon gas in order to reduce a silicon compound in the substrate to form a coherent opaque silicon deposit of predetermined desired form, adherent to the substrate at the site.
  • the invention features, generally, apparatus for accurately altering a site on a substrate, comprising: (1) a focusable ion source; (2) a lens positioned to focus ions emitted by the source, thus forming a beam; (3) a chamber adapted to receive the substrate and position it in the focused ion beam, the chamber comprising at least two baffles defining a series of adjacent chamber regions along the path of the ion beam beginning at the substrate, each baffle defining an opening positioned along the beam path to allow the beam to pass therethrough; (4) a gas inlet adapted to introduce into a first chamber region a gas for deposition;at the site, the first chamber region being the chamber region containing the site, and (5) an outlet from a second chamber region, the outlet communicating with a vacuum pump, the second chamber region being spaced upwardly along the beam path from the first chamber region, so that the pressure in the first chamber region is greater than the pressure in the second chamber region.
  • the site is a transparent defect on a photolithographic mask requiring alteration and the scanning is performed to provide a deposit which renders the defect opaque;
  • the gas is adsorbed at the substrate surface where the beam causes it to react;
  • the mask substrate is comprised predominantly of compounds of silicon and oxygen and the method is conducted to form at the surface of the mask substrate an adherent, hard deposit comprised primarily of carbon;
  • the hydrocarbon gas may be directed at the site in the form of a beam of negatively charged hydrocarbon molecules;
  • the above-described baffles are included to maintain differential pressures of the hydrocarbon gas in the resulting chamber regions, the greatest pressure being maintained in the region containing the site;
  • the ion beam energy is between about 25 and 70 keV (most preferably 30-50 keV) ;
  • the image is formed by scanning the focused ion beam over the site without the presence of the hydrocarbon gas and by sensing charged particles such as ions or electrons emitted from the site; and the ion beam spot size is on the order of 1
  • the apparatus includes a means for forming an image of the site to be altered (e.g., a detector that provides a signal representative of charged particles such as electrons or ions emitted in response to bombardment of the mask) , means for positioning the site in the ion beam path, and a beam deflector for repeatedly scanning the beam in- a scan pattern over the site area on the basis of that image;
  • the ion source is a liquid metal ion source;
  • a source of hydrocarbon gas communicates with the gas inlet;
  • each of the baffles comprises a horizontal member defining the opening for the beam; and the horizontal member of the first baffle is spaced below the horizontal member of the second baffle a distance at least two (most preferably four) times the diameter of either of the openings in the baffles.
  • the invention provides a coherent, adherent, and durable opaque coating layer specifically and accurately positioned at the site that is to be altered, e.g., the transparent defect, without the need for wet processing steps that can create particulates and damage mask surfaces.
  • the focused ion beam provides accuracy and resolution to control the deposition of the layer.
  • the layer provides good adherence to both the mask substrate and the mask opaque layer surrounding the site.
  • the layer is sufficiently hard or resistant to withstand abrasion encountered in the course of ordinary photolithographic processing. Potentially troublesome materials that could contaminate extremely pure semiconductor workpieces are avoided because non-carbonaceous products preferably are removed as a gas. Dangerous or poisonous materials can also be avoided; or, if they are used, such materials can be better controlled.
  • the rate of. eposit of the material from the gas can be high enough to overcome the rate of loss of substrate from ion beam induced sputtering; thus, the beam does not cause a net loss of mask material, in part because loss of material, if any, from sputtering can be more than compensated by a high deposition rate achieved, e.g., by locally increased hydrocarbon gas concentrations or by use of a relatively high molecular weight gas.
  • Fig. 1 is a highly diagrammatic sectional representation of apparatus for repairing a mask.
  • Fig. 2 is a greatly enlarged diagrammatic representation of the mask repair process.
  • Fig. 3 is a sectional, diagrammatic view of a portion of one embodiment of apparatus for repairing a mask.
  • Fig. 4 is a sectional, diagrammatic view of another embodiment of apparatus for repairing a mask.
  • apparatus 5 for repairing a photolithographic mask includes, in general, ion beam source 10 and beam focusing column 20 arranged to deliver a focused ion beam 24 to vacuum chamber 30 through opening 32. Ithin chamber 30 is an X-Y stage table 40 adapted to hold mask 35 in the path of ion beam 24.
  • a gas delivery system includes an inlet tube 50 (broken away in Fig. 1) extending through the wall of chamber 30.
  • a vacuum pump 60 communicates with chamber 30 through port 62 to evacuate the chamber.
  • suitable ion sources are disclosed in Clampitt et al. , U.S. Patent 4,088,919, Jergenson, U.S. Patent 4,318,029, and Jergenson, U.S. ' Patent 4,318,030, each of which is hereby incorporated by reference.
  • the source includes a tip 12 from which metal ions are emitted under the action of extractor electrode 14 in a continuous and stable beam that can be focused by column 20.
  • Electrode 14 is insulated from tip 12 by electrical insulation 13.
  • Focusing -column 20 includes lens 22 to deliver a focused • ion beam through opening 32 in chamber 30. Specifically, an axial electric field between conductive elements 28 and 29 creates, an electrostatic immersion lens 22. Insulation 85 electrically insulates chamber 30 from focusing column 20.
  • a suitable focusing column is described in Wang et al. J. Vac. Sci. Tech. 19(4) :1158-1163 (1981) which is hereby incorporated by reference. Ion source 10 and column 20 are capable of delivering a high-energy focused liquid-metal ion beam
  • a spot size of 0.1 to 1.0 microns (micrometers).
  • Ion beam energy should be great enough to enable focusing (at least 20 keV) .
  • a preferred range of operation is 25 to 70 keV, most preferably 25 - 50 keV.
  • Such energies are satisfactory for removing opaque defects, so that both types of defects can be repaired by the same piece of apparatus.
  • By providing sufficiently high local gas concentrations it is possible to achieve a deposition rate that exceeds the rate of material loss due to ion beam sputtering, and thus to provide a coherent opaque deposit that is carefully limited to the site to be altered, e.g., the defect site.
  • the use of a focused liquid metal ion beam, in combination with the hydrocarbon selection and the chamber design as described below are particularly advantageous in this regard.
  • the apparatus includes an X-Y stage table 40 controlled by stage drive motor 42 connected thereto by a transmission shaft 44 through a sealed bearing in the wall of chamber 30.
  • the motor may be positioned inside the vacuum chamber.
  • Motor 42 is controlled by stage drive electronics 45, which in turn are connected to computer pattern generator and image display 46.
  • Display 46 is supplied by electron detector 48 with a signal representative of electrons generated by the collision of beam 24 with the mask to indicate the position of the beam on the mask as described in more detail below.
  • detector 48 can be used to detect ions emitted from the mask during beam bombardment.
  • An electron source (not shown) also can be provided to neutralize charge build-up during ion bombardment for imaging.
  • Apparatus 5 also includes a means for controlling the beam direction. Specifically, an electronic beam deflector 26 is positioned inside chamber 30 at opening 32 to enable deflection of the beam according to a desired pattern as described below.
  • the gas delivery system includes a pressurized gas bottle 52, a regulator 54 and micro-leak valve 56 to deliver extremely low gas pressures (e.g. between about
  • this gas pressure should be low enough to avoid destabilizing the ion source or dispersing the beam as it travels through the vacuum chamber; at the same time, the pressure should be high enough to provide a deposition rate that overcomes sputtering.
  • the mask is placed on X-Y table 40 and chamber 30 is pumped down e.g., to 3 x 10 torr.
  • Source 10 and column 20 are activated to direct a focused gallium ion beam 24 at mask 35.
  • detector 48 for example, a channel electron multiplier such as one manufactured by Galileo Electrooptics Corp., Sturbridge Mass.
  • detector 48 for example, a channel electron multiplier such as one manufactured by Galileo Electrooptics Corp., Sturbridge Mass.
  • the signal generated will depend upon the characteristics of the specific region of mask 35 under bombardment by beam 24.
  • hydrocarbon gas from bottle 52 is introduced into the defect region in a manner described in more detail below. Since the size of a pin-hole defect may be upwards from about 0.25 microns to about 100 microns or more, which is much greater (e.g. over 10 times greater) than the beam spot size, beam deflector 26 is activated by computer display 46 to scan the beam to cover the entire defect. For example, a raster scan can be generated to cover a polygon that covers the entire site with some overlap of the chrome layer. When repairing the- defect, carbon is locally deposited as described elsewhere herein, momentarily depleating the hydrocarbon supply at the beam spot.
  • the beam spot is continually being moved to a location that has a replenished hydrocarbon supply, and the beam can be repeatedly scanned over the defect at a rate that allows hydrocarbon to replenish before the beam spot returns to a given location in the defect site.
  • Fig. 2 depicts in a very diagrammatic way the interaction between beam 24, the hydrocarbon gas, and mask 35.
  • the chrome layer 81 on mask 35 ends at the perimeter of a transparent defect that is being repaired. The far side of that defect is not shown.
  • Beam 24, represented by broken lines, is scanning from left to right. Beam 24 is between 0.1 and 10 microns in diameter.
  • Hydrogen gas is formed and carbon atoms combine either with each other and preferably with atoms or compounds in the mask.
  • the carbon atoms may combine with the silicon of the silicon dioxide in the glass or quartz, releasing oxygen gas and forming a silicon carbide transition layer. On top of that transition layer, a tenacious, hard, opaque carbon layer is deposited, probably in amorphous (vitreous) form, and hydrogen gas is released.
  • Figs. 3 and 4 depict features that can be combined with each other, or can be used individually, with the apparatus diagrammed in Fig. 1.
  • hydrocarbon gas for any particular application depends inter alia upon the particular deposition apparatus employed, and upon the requirements for thin layer adsorption of hydrocarbon monolayers at the substrate surface site.
  • hydrocarbon whose vapor pressure is high enough to condense upon the substrate under the temperature and pressure conditions prevailing at the surface.
  • the hydrocarbon should be selected to have a vapor pressure high enough to avoid condensation under delivery tube conditions. Heat may be used to avoid such condensation; if heat is used, in certain instances a means of cooling may be employed to enhance condensation at the site.
  • a cooling heat exchanger is employed in the region of the directed gas outlet of the delivery tube.
  • the flow system and directed gas outlet are constructed and arranged to provide substantial cooling by adiabatic expansion.
  • the substrate is cooled by supporting it on a cooled surface, with a gas confined at the interface between the substrate and support, at a subatmospheric pressure greater than that of the surrounding vacuum chamber to provide a conductive medium that enables effective heat transfer from the substrate to the cooled support.
  • mask 35 is surrounded by a plurality of rectangular ' baffles 37, 38, and 39, each of which has a central opening 33 and is aligned with respect to beam 24 and mask 35 to allow the beam to bombard the mask.
  • the outer baffles 37 and 38 define respectively, two chambers 70 and 72, each communicating with an outlet 64 to a vacuum pump.
  • the inner baffle defines a chamber 74 over the operative site of mask 35.
  • Gas inlet 53 provides hydrocarbon gas to chamber 74.
  • graded differential pressure seals 84 that allow horizontal movement of the mask relative to the nest of baffles, while maintaining a pressure seal.
  • the gas pressure is greatest in inner chamber 74 and lowest in outer chamber 70 so that some gas flow occurs from chamber 74, through chambers 72 and 70, to chamber 30. This gas flow should be minimized to maintain a relatively high pressure in the region immediately adjacent the mask without causing excessive beam scattering from gas molecules in the beam path in chamber 30.
  • the flow from chamber to chamber will be, in effect, close to a molecular straight-line flow so that the angular spread alpha at an orifice will be approximately 30°.
  • the spacing between baffles to be at least 3-4 times the diameter d of the central openings 33, the predominant gas flow through an orifice will be deflected by the next baffle.
  • openings 33 should be established to allow satisfactory scanning of the defect site. If the defect encountered is 'likely to be about 20 microns, for example, openings 33 should be about 2 1/2 times that distance or 50 microns.
  • Fig. 4 shows an alternate embodiment that uses a carefully positioned gas inlet 55 (e.g. a hypodermic needle or other small diameter tubing) angled slightly to direct the gas flow to the spot of impact of beam 24 on mask 35.
  • gas inlet 55 e.g. a hypodermic needle or other small diameter tubing
  • the molecular gas flow will exit inlet 55 at a sprea 'angle of 30°.
  • Inlet 55 is spaced a distance f above mask 35 on the order of (most preferably approximately equal to) the diameter of the opening of inlet 55, which has a diameter of between
  • Distance f may be adjusted to optimize deposition, and it is preferably between 0.02 and 0.2 mm. The distance can be up to about 1 mm.
  • the substrate may be contained in a differentially pumped chamber having an opening designed to transmit the ion beam.
  • Gases other than hydrocarbons can be used in the featured apparatus.
  • dangerous or poisonous gases can be used with the apparatus of Fig. 3 and such gases will be trapped largely in the outflow of outlets 64, thus allowing improved control of the gas.
  • the hydrocarbon gas may be introduced as negatively charged hydrocarbon molecules.
  • Hydrogen gas may be used to reduce the silicon dioxide in the mask substrate, forming an opaque silicon deposit and water vapor.
  • the differentially -pumped chambers may be arranged in other ways; for example, all of the chambers may enclose the substrate entirely, so that there is no seal between the substrate and the chamber walls.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

On altère avec exactitude un site précisément localisé sur un substrat (35) en balayant le site avec un faisceau focalisé d'ions (24) en présence d'un gaz (hydrocarbure ou hydrogène) au niveau du site pour former un dépôt opaque sur celui-ci.
EP19850905574 1984-10-26 1985-10-25 Alteration focalisee d'un substrat Withdrawn EP0198907A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US66525184A 1984-10-26 1984-10-26
US665251 1984-10-26
US76937085A 1985-08-26 1985-08-26
US769370 1985-08-26

Publications (1)

Publication Number Publication Date
EP0198907A1 true EP0198907A1 (fr) 1986-10-29

Family

ID=27099157

Family Applications (2)

Application Number Title Priority Date Filing Date
EP19850905575 Withdrawn EP0198908A4 (fr) 1984-10-26 1985-10-25 Alteration focalisee d'un substrat.
EP19850905574 Withdrawn EP0198907A1 (fr) 1984-10-26 1985-10-25 Alteration focalisee d'un substrat

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP19850905575 Withdrawn EP0198908A4 (fr) 1984-10-26 1985-10-25 Alteration focalisee d'un substrat.

Country Status (2)

Country Link
EP (2) EP0198908A4 (fr)
WO (2) WO1986002774A1 (fr)

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EP0273351B1 (fr) * 1986-12-26 1993-05-05 Seiko Instruments Inc. Appareil pour la réparation d'un film comportant des motifs
WO1989004052A1 (fr) * 1987-10-22 1989-05-05 Oxford Instruments Limited Exposition de substrats a des faisceaux ioniques
EP0316111B1 (fr) * 1987-11-09 1994-08-17 AT&T Corp. Correction de masques
JPH01154064A (ja) * 1987-12-10 1989-06-16 Fujitsu Ltd 微細パターンの形成方法
DE4029470C1 (en) * 1990-09-17 1991-05-23 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Local gas atmos. generator for vacuum receptacle - has application jet with ID tapering to outlet tip smaller than 100 microns
US5149974A (en) * 1990-10-29 1992-09-22 International Business Machines Corporation Gas delivery for ion beam deposition and etching
GB2258083A (en) * 1991-07-25 1993-01-27 Kratos Analytical Ltd Sample analysis apparatus and method.
UA73290C2 (uk) * 1999-08-04 2005-07-15 Дженерал Електрік Компані Електронно-променевий пристрій для нанесення покриття шляхом конденсації з парової фази (варіанти)
DE102006054695B4 (de) * 2006-11-17 2014-05-15 Carl Von Ossietzky Universität Oldenburg Verfahren zur Regelung nanoskaliger elektronenstrahlinduzierter Abscheidungen

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JPS5034439B1 (fr) * 1969-05-16 1975-11-08
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JPS5732630A (en) * 1980-08-04 1982-02-22 Mitsubishi Electric Corp Repair of defect on photomask
JPS57102019A (en) * 1980-12-17 1982-06-24 Mitsubishi Electric Corp Failure correction of x-ray exposure mask
JPS586133A (ja) * 1981-07-03 1983-01-13 Mitsubishi Electric Corp 微細パタ−ン形成装置
JPS586127A (ja) * 1981-07-03 1983-01-13 Hitachi Ltd フオトマスク欠陥修正方法とその装置
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Also Published As

Publication number Publication date
EP0198908A1 (fr) 1986-10-29
WO1986002581A1 (fr) 1986-05-09
EP0198908A4 (fr) 1987-03-02
WO1986002774A1 (fr) 1986-05-09

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