DE69939963D1 - Herstellungsverfahren für ein Halbleiterbauelement mit verschiedenen Gateoxidschichten - Google Patents

Herstellungsverfahren für ein Halbleiterbauelement mit verschiedenen Gateoxidschichten

Info

Publication number
DE69939963D1
DE69939963D1 DE69939963T DE69939963T DE69939963D1 DE 69939963 D1 DE69939963 D1 DE 69939963D1 DE 69939963 T DE69939963 T DE 69939963T DE 69939963 T DE69939963 T DE 69939963T DE 69939963 D1 DE69939963 D1 DE 69939963D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
gate oxide
oxide layers
different gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69939963T
Other languages
English (en)
Inventor
Won-Suk Yang
Ki-Nam Kim
Jai-Hoon Sim
Jae-Kyu Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE69939963D1 publication Critical patent/DE69939963D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823462MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
DE69939963T 1998-06-15 1999-05-27 Herstellungsverfahren für ein Halbleiterbauelement mit verschiedenen Gateoxidschichten Expired - Lifetime DE69939963D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980022434A KR100267010B1 (ko) 1998-06-15 1998-06-15 반도체 장치의 제조 방법

Publications (1)

Publication Number Publication Date
DE69939963D1 true DE69939963D1 (de) 2009-01-08

Family

ID=19539577

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69939963T Expired - Lifetime DE69939963D1 (de) 1998-06-15 1999-05-27 Herstellungsverfahren für ein Halbleiterbauelement mit verschiedenen Gateoxidschichten

Country Status (7)

Country Link
US (1) US6329249B1 (de)
EP (1) EP0966036B1 (de)
JP (1) JP4271779B2 (de)
KR (1) KR100267010B1 (de)
CN (1) CN1227719C (de)
DE (1) DE69939963D1 (de)
TW (1) TW444295B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1459377A2 (de) 2001-07-03 2004-09-22 Koninklijke Philips Electronics N.V. Herstellungsverfahren für halbleiterbauelement mit mos-transistoren unterschiedlicher gatteroxiddicken
KR101181050B1 (ko) 2011-01-31 2012-09-10 주식회사 동부하이텍 전원 관리 소자
KR102458453B1 (ko) 2020-12-15 2022-10-27 대한민국 석발기가 구비된 곡물 정선장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4352236A (en) * 1981-07-24 1982-10-05 Intel Corporation Double field oxidation process
US5371026A (en) * 1992-11-30 1994-12-06 Motorola Inc. Method for fabricating paired MOS transistors having a current-gain differential
US5756385A (en) * 1994-03-30 1998-05-26 Sandisk Corporation Dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
JP3532625B2 (ja) * 1994-10-06 2004-05-31 東芝マイクロエレクトロニクス株式会社 半導体装置の製造方法
US5595922A (en) * 1994-10-28 1997-01-21 Texas Instruments Process for thickening selective gate oxide regions
JP3444687B2 (ja) * 1995-03-13 2003-09-08 三菱電機株式会社 不揮発性半導体記憶装置
EP0788144B1 (de) * 1996-01-31 2003-11-26 STMicroelectronics S.r.l. Verfahren zur Herstellung nichtflüchtiger Speicheranordnungen mit Tunneloxid
KR100224780B1 (ko) * 1996-12-31 1999-10-15 김영환 반도체 소자의 필드산화막 제조방법
TW327701B (en) * 1997-07-21 1998-03-01 United Semiconductor Corp The flash memory cell
KR100268409B1 (ko) * 1998-05-20 2000-10-16 윤종용 반도체 장치의 제조 방법
US6046086A (en) * 1998-06-19 2000-04-04 Taiwan Semiconductor Manufacturing Company Method to improve the capacity of data retention and increase the coupling ratio of source to floating gate in split-gate flash
US5960289A (en) * 1998-06-22 1999-09-28 Motorola, Inc. Method for making a dual-thickness gate oxide layer using a nitride/oxide composite region
US6204159B1 (en) * 1999-07-09 2001-03-20 Advanced Micro Devices, Inc. Method of forming select gate to improve reliability and performance for NAND type flash memory devices

Also Published As

Publication number Publication date
US6329249B1 (en) 2001-12-11
TW444295B (en) 2001-07-01
KR20000001947A (ko) 2000-01-15
CN1239819A (zh) 1999-12-29
JP2000031423A (ja) 2000-01-28
JP4271779B2 (ja) 2009-06-03
EP0966036A3 (de) 2000-10-18
KR100267010B1 (ko) 2000-09-15
EP0966036A2 (de) 1999-12-22
CN1227719C (zh) 2005-11-16
EP0966036B1 (de) 2008-11-26

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Legal Events

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