DE69928916T2 - Prozess zur entfernung von organischem material - Google Patents

Prozess zur entfernung von organischem material Download PDF

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Publication number
DE69928916T2
DE69928916T2 DE69928916T DE69928916T DE69928916T2 DE 69928916 T2 DE69928916 T2 DE 69928916T2 DE 69928916 T DE69928916 T DE 69928916T DE 69928916 T DE69928916 T DE 69928916T DE 69928916 T2 DE69928916 T2 DE 69928916T2
Authority
DE
Germany
Prior art keywords
organic material
removing organic
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69928916T
Other languages
English (en)
Other versions
DE69928916D1 (de
Inventor
E Carter
L Nelson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FSI INTERNATIONAL CHASKA
Tel Manufacturing and Engineering of America Inc
Original Assignee
FSI INTERNATIONAL CHASKA
FSI International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FSI INTERNATIONAL CHASKA, FSI International Inc filed Critical FSI INTERNATIONAL CHASKA
Publication of DE69928916D1 publication Critical patent/DE69928916D1/de
Application granted granted Critical
Publication of DE69928916T2 publication Critical patent/DE69928916T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Weting (AREA)
DE69928916T 1998-03-30 1999-03-30 Prozess zur entfernung von organischem material Expired - Fee Related DE69928916T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/050,703 US6080531A (en) 1998-03-30 1998-03-30 Organic removal process
PCT/US1999/006954 WO1999050898A1 (en) 1998-03-30 1999-03-30 Organic removal process

Publications (2)

Publication Number Publication Date
DE69928916D1 DE69928916D1 (de) 2006-01-19
DE69928916T2 true DE69928916T2 (de) 2006-06-14

Family

ID=21966884

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69928916T Expired - Fee Related DE69928916T2 (de) 1998-03-30 1999-03-30 Prozess zur entfernung von organischem material

Country Status (7)

Country Link
US (2) US6080531A (de)
EP (1) EP1070345B1 (de)
JP (1) JP2002510806A (de)
KR (1) KR20010042266A (de)
CN (1) CN1147925C (de)
DE (1) DE69928916T2 (de)
WO (1) WO1999050898A1 (de)

Cited By (1)

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DE102012206405A1 (de) * 2012-04-18 2013-10-24 Globalfoundries Inc. Verfahren zur Erzielung erhöhter Bauteilzuverlässigkeit eines Halbleiterbauelements durch Bereitstellen günstigerer Prozessbedingungen beim Aufwachsen einer Schicht mit großem ε

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US6982006B1 (en) 1999-10-19 2006-01-03 Boyers David G Method and apparatus for treating a substrate with an ozone-solvent solution
US6743301B2 (en) 1999-12-24 2004-06-01 mFSI Ltd. Substrate treatment process and apparatus
US6440871B1 (en) * 2000-08-16 2002-08-27 Micron Technology, Inc. Gas assisted method for applying resist stripper and gas-resist stripper combinations
US6686297B1 (en) 2000-08-17 2004-02-03 Georg Gogg Method of manufacturing a semiconductor device and apparatus to be used therefore
US6805791B2 (en) * 2000-09-01 2004-10-19 Applied Science And Technology, Inc. Ozonated water flow and concentration control apparatus
US6558477B1 (en) 2000-10-16 2003-05-06 Micron Technology, Inc. Removal of photoresist through the use of hot deionized water bath, water vapor and ozone gas
US6777344B2 (en) * 2001-02-12 2004-08-17 Lam Research Corporation Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications
US6867148B2 (en) * 2001-05-16 2005-03-15 Micron Technology, Inc. Removal of organic material in integrated circuit fabrication using ozonated organic acid solutions
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US6720271B2 (en) * 2001-07-02 2004-04-13 Stmicroelectronics S.R.L. Process for removing polymers during the fabrication of semiconductor devices
KR100646793B1 (ko) * 2001-11-13 2006-11-17 삼성전자주식회사 씬너 조성물
US20030116174A1 (en) * 2001-12-21 2003-06-26 Park Jin-Goo Semiconductor wafer cleaning apparatus and cleaning method using the same
JP3717846B2 (ja) * 2001-12-25 2005-11-16 Ｈｏｙａ株式会社 反射防止膜を有するプラスチックレンズの製造方法
US6649018B2 (en) * 2002-01-17 2003-11-18 Akrion, Llc System for removal of photoresist using sparger
US20030136429A1 (en) * 2002-01-22 2003-07-24 Semitool, Inc. Vapor cleaning and liquid rinsing process vessel
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US7414721B1 (en) * 2002-12-23 2008-08-19 Lsi Corporation In-situ metrology system and method for monitoring metalization and other thin film formation
JP2006059831A (ja) * 2003-05-01 2006-03-02 Daikin Ind Ltd エッチング液およびエッチング方法
US7358146B2 (en) * 2003-06-24 2008-04-15 Micron Technology, Inc. Method of forming a capacitor
US7153778B2 (en) * 2004-02-20 2006-12-26 Micron Technology, Inc. Methods of forming openings, and methods of forming container capacitors
US7502114B2 (en) * 2004-03-12 2009-03-10 Mks Instruments, Inc. Ozone concentration sensor
JP2006004968A (ja) * 2004-06-15 2006-01-05 Renesas Technology Corp 半導体製造装置、半導体装置の製造方法およびガス中金属の除去方法
US20060021634A1 (en) * 2004-07-08 2006-02-02 Liu Zhi Lewis Method and apparatus for creating ozonated process solutions having high ozone concentration
US20060011214A1 (en) * 2004-07-09 2006-01-19 Zhi Liu System and method for pre-gate cleaning of substrates
EP1794783A1 (de) * 2004-09-17 2007-06-13 FSI International, Inc. Verwendung von ozon zur verarbeitung von wafer-artigen objekten
US20060266737A1 (en) * 2005-05-27 2006-11-30 Hanestad Ronald J Process for removal of metals and alloys from a substrate
KR100655788B1 (ko) * 2005-06-30 2006-12-08 삼성전자주식회사 반도체 소자의 세정방법 및 이를 이용한 반도체 소자의제조방법.
US20070095366A1 (en) * 2005-11-02 2007-05-03 Applied Materials, Inc. Stripping and cleaning of organic-containing materials from electronic device substrate surfaces
DE102005059850A1 (de) * 2005-12-15 2007-06-28 Atmel Germany Gmbh Vorrichtung zum Reinigen und Trocknen von Wafern
US7402213B2 (en) * 2006-02-03 2008-07-22 Applied Materials, Inc. Stripping and removal of organic-containing materials from electronic device substrate surfaces
US20070272280A1 (en) * 2006-05-24 2007-11-29 Texas Instruments Incorporated System and method for spray cleaning ceramic packages
JP5383979B2 (ja) * 2007-02-01 2014-01-08 東京エレクトロン株式会社 処理システム
US20080206096A1 (en) * 2007-02-27 2008-08-28 Deka Ganesh C Medical packaging substrate for ozone sterilization
US7767586B2 (en) * 2007-10-29 2010-08-03 Applied Materials, Inc. Methods for forming connective elements on integrated circuits for packaging applications
US8741071B2 (en) 2008-01-09 2014-06-03 Freescale Semiconductor, Inc. Semiconductor processing method
KR101816319B1 (ko) * 2009-06-03 2018-01-08 구라시키 보세키 가부시키가이샤 하이드록실 라디칼 함유수 공급방법 및 하이드록실 라디칼 함유수 공급장치
US20110130009A1 (en) * 2009-11-30 2011-06-02 Lam Research Ag Method and apparatus for surface treatment using a mixture of acid and oxidizing gas
CN101968610A (zh) * 2010-08-12 2011-02-09 武汉华灿光电有限公司 一种全湿刻蚀后去胶的方法
US8853081B2 (en) 2012-12-27 2014-10-07 Intermolecular, Inc. High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures
WO2015152223A1 (ja) * 2014-03-31 2015-10-08 独立行政法人産業技術総合研究所 半導体の製造方法およびウエハ基板の洗浄方法
US9567493B2 (en) * 2014-04-25 2017-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. CMP slurry solution for hardened fluid material

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012206405A1 (de) * 2012-04-18 2013-10-24 Globalfoundries Inc. Verfahren zur Erzielung erhöhter Bauteilzuverlässigkeit eines Halbleiterbauelements durch Bereitstellen günstigerer Prozessbedingungen beim Aufwachsen einer Schicht mit großem ε
DE102012206405B4 (de) * 2012-04-18 2013-11-07 Globalfoundries Inc. Verfahren zur Erzielung erhöhter Bauteilzuverlässigkeit eines Halbleiterbauelements durch Bereitstellen günstigerer Prozessbedingungen beim Aufwachsen einer Schicht mit großem ε

Also Published As

Publication number Publication date
KR20010042266A (ko) 2001-05-25
EP1070345B1 (de) 2005-12-14
WO1999050898A1 (en) 1999-10-07
CN1302452A (zh) 2001-07-04
US6080531A (en) 2000-06-27
JP2002510806A (ja) 2002-04-09
DE69928916D1 (de) 2006-01-19
EP1070345A1 (de) 2001-01-24
CN1147925C (zh) 2004-04-28
US6383724B1 (en) 2002-05-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee