DE69840337D1 - Verfahren zur herstellung von leistungshalbleiterbauelementen mit zusammengebundenen körperwannen und dadurch hergestellte bauelementen - Google Patents

Verfahren zur herstellung von leistungshalbleiterbauelementen mit zusammengebundenen körperwannen und dadurch hergestellte bauelementen

Info

Publication number
DE69840337D1
DE69840337D1 DE69840337T DE69840337T DE69840337D1 DE 69840337 D1 DE69840337 D1 DE 69840337D1 DE 69840337 T DE69840337 T DE 69840337T DE 69840337 T DE69840337 T DE 69840337T DE 69840337 D1 DE69840337 D1 DE 69840337D1
Authority
DE
Germany
Prior art keywords
components
producing semiconductor
assembled bodies
made therefor
semiconductor components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69840337T
Other languages
English (en)
Inventor
Jun Zeng
Carl Franklin Wheatley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Application granted granted Critical
Publication of DE69840337D1 publication Critical patent/DE69840337D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66719—With a step of forming an insulating sidewall spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0626—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a localised breakdown region, e.g. built-in avalanching region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
DE69840337T 1997-10-17 1998-10-16 Verfahren zur herstellung von leistungshalbleiterbauelementen mit zusammengebundenen körperwannen und dadurch hergestellte bauelementen Expired - Lifetime DE69840337D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6231297P 1997-10-17 1997-10-17
PCT/US1998/022041 WO1999021215A2 (en) 1997-10-17 1998-10-16 Methods of forming power semiconductor devices having merged split-well body regions therein and devices formed thereby

Publications (1)

Publication Number Publication Date
DE69840337D1 true DE69840337D1 (de) 2009-01-22

Family

ID=22041673

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69840337T Expired - Lifetime DE69840337D1 (de) 1997-10-17 1998-10-16 Verfahren zur herstellung von leistungshalbleiterbauelementen mit zusammengebundenen körperwannen und dadurch hergestellte bauelementen

Country Status (6)

Country Link
US (1) US6121089A (de)
EP (1) EP1027725B1 (de)
JP (1) JP4625179B2 (de)
KR (1) KR100512646B1 (de)
DE (1) DE69840337D1 (de)
WO (1) WO1999021215A2 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5936284A (en) * 1997-11-03 1999-08-10 Sgs-Thomson Microelectronics S.R.L. Electrostatic discharge protection circuit and transistor
US6025232A (en) 1997-11-12 2000-02-15 Micron Technology, Inc. Methods of forming field effect transistors and related field effect transistor constructions
US6429481B1 (en) 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
JP3924975B2 (ja) * 1999-02-05 2007-06-06 富士電機デバイステクノロジー株式会社 トレンチ型絶縁ゲートバイポーラトランジスタ
FR2807568A1 (fr) * 2000-04-10 2001-10-12 St Microelectronics Sa Procede de formation de couches enterrees
US6921939B2 (en) * 2000-07-20 2005-07-26 Fairchild Semiconductor Corporation Power MOSFET and method for forming same using a self-aligned body implant
JP2004520718A (ja) 2001-04-28 2004-07-08 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ トレンチ−ゲート構造半導体装置及びその製造方法
JP4216189B2 (ja) 2001-09-04 2009-01-28 エヌエックスピー ビー ヴィ エッジ構造を備えた半導体装置の製造方法
US6977203B2 (en) * 2001-11-20 2005-12-20 General Semiconductor, Inc. Method of forming narrow trenches in semiconductor substrates
US7192853B1 (en) * 2003-09-10 2007-03-20 National Semiconductor Corporation Method of improving the breakdown voltage of a diffused semiconductor junction
US6931345B1 (en) * 2003-10-17 2005-08-16 National Semiconductor Corporation Method for quantifying safe operating area for bipolar junction transistor
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
JP4800602B2 (ja) * 2004-09-09 2011-10-26 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
US6965146B1 (en) * 2004-11-29 2005-11-15 Silicon-Based Technology Corp. Self-aligned planar DMOS transistor structure and its manufacturing methods
AT504998A2 (de) 2005-04-06 2008-09-15 Fairchild Semiconductor Trenched-gate-feldeffekttransistoren und verfahren zum bilden derselben
JP4928753B2 (ja) * 2005-07-14 2012-05-09 株式会社東芝 トレンチゲート型半導体装置
EP1915782A1 (de) * 2005-08-10 2008-04-30 Freescale Semiconductor, Inc. Feldeffekt-halbleiterbauelement und verfahren zu seiner herstellung
JP2007311557A (ja) * 2006-05-18 2007-11-29 Toshiba Corp 半導体装置及びその製造方法
US7851889B2 (en) * 2007-04-30 2010-12-14 Freescale Semiconductor, Inc. MOSFET device including a source with alternating P-type and N-type regions
US20090272982A1 (en) * 2008-03-03 2009-11-05 Fuji Electric Device Technology Co., Ltd. Trench gate type semiconductor device and method of producing the same
EP2197025B1 (de) * 2008-12-12 2011-04-27 ABB Technology AG Herstellungsverfahren eines Leistungshalbleiterbauelements
US8742451B2 (en) * 2010-05-24 2014-06-03 Ixys Corporation Power transistor with increased avalanche current and energy rating
KR101457855B1 (ko) * 2013-01-21 2014-11-06 주식회사 실리콘웍스 모스 제어 정류 회로의 제조 방법
CN105336774B (zh) * 2014-06-30 2019-02-19 北大方正集团有限公司 垂直双扩散场效应晶体管及其制作方法
CN106033774A (zh) * 2015-03-13 2016-10-19 北大方正集团有限公司 一种场效应管及其制备方法
US9780202B2 (en) 2015-08-31 2017-10-03 Ixys Corporation Trench IGBT with waved floating P-well electron injection
US10367085B2 (en) 2015-08-31 2019-07-30 Littelfuse, Inc. IGBT with waved floating P-Well electron injection
US9780168B2 (en) 2015-08-31 2017-10-03 Ixys Corporation IGBT with waved floating P-well electron injection
KR20180104236A (ko) 2017-03-10 2018-09-20 매그나칩 반도체 유한회사 전력 반도체 소자의 제조 방법
KR101928253B1 (ko) 2018-11-02 2018-12-11 매그나칩 반도체 유한회사 전력 반도체 소자의 제조 방법
KR102369057B1 (ko) * 2020-05-22 2022-03-02 현대모비스 주식회사 전력 반도체 소자 및 그 제조 방법
JP2021185595A (ja) 2020-05-22 2021-12-09 ヒュンダイ・モービス・カンパニー・リミテッド パワー半導体素子およびその製造方法
US11823905B2 (en) * 2022-02-28 2023-11-21 SCDevice LLC Self aligned MOSFET devices and associated fabrication methods

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US4587713A (en) * 1984-02-22 1986-05-13 Rca Corporation Method for making vertical MOSFET with reduced bipolar effects
JPS63280458A (ja) * 1987-05-12 1988-11-17 Oki Electric Ind Co Ltd 縦型ｍｏｓ半導体素子の製造方法
JP2724146B2 (ja) * 1987-05-29 1998-03-09 日産自動車株式会社 縦形ｍｏｓｆｅｔ
US4835586A (en) * 1987-09-21 1989-05-30 Siliconix Incorporated Dual-gate high density fet
JPH01117363A (ja) * 1987-10-30 1989-05-10 Nec Corp 縦型絶縁ゲート電界効果トランジスタ
JPH01132167A (ja) * 1987-11-17 1989-05-24 Mitsubishi Electric Corp 半導体装置
JPH0734474B2 (ja) * 1988-03-03 1995-04-12 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔの製造方法
JPH0687504B2 (ja) * 1988-04-05 1994-11-02 株式会社東芝 半導体装置
JP2787921B2 (ja) * 1989-01-06 1998-08-20 三菱電機株式会社 絶縁ゲート型バイポーラトランジスタ
US4980740A (en) * 1989-03-27 1990-12-25 General Electric Company MOS-pilot structure for an insulated gate transistor
JPH02312280A (ja) * 1989-05-26 1990-12-27 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ
US5095343A (en) * 1989-06-14 1992-03-10 Harris Corporation Power MOSFET
EP0416805B1 (de) * 1989-08-30 1996-11-20 Siliconix, Inc. Transistor mit Spannungsbegrenzungsanordnung
JPH0396282A (ja) * 1989-09-08 1991-04-22 Fuji Electric Co Ltd 絶縁ゲート型半導体装置
JP2504862B2 (ja) * 1990-10-08 1996-06-05 三菱電機株式会社 半導体装置及びその製造方法
US5168331A (en) * 1991-01-31 1992-12-01 Siliconix Incorporated Power metal-oxide-semiconductor field effect transistor
JPH04322470A (ja) * 1991-04-23 1992-11-12 Fuji Electric Co Ltd 絶縁ゲートバイポーラトランジスタ
DE4216810C2 (de) * 1991-05-31 1999-09-16 Fuji Electric Co Ltd Steuerschaltung für einen Leitfähigkeitsänderungs-MISFET
US5171705A (en) * 1991-11-22 1992-12-15 Supertex, Inc. Self-aligned structure and process for DMOS transistor
US5323036A (en) * 1992-01-21 1994-06-21 Harris Corporation Power FET with gate segments covering drain regions disposed in a hexagonal pattern
US5349212A (en) * 1992-06-01 1994-09-20 Fuji Electric Co., Ltd. Semiconductor device having thyristor structure
US5198687A (en) * 1992-07-23 1993-03-30 Baliga Bantval J Base resistance controlled thyristor with single-polarity turn-on and turn-off control
GB9216599D0 (en) * 1992-08-05 1992-09-16 Philips Electronics Uk Ltd A semiconductor device comprising a vertical insulated gate field effect device and a method of manufacturing such a device
US5396087A (en) * 1992-12-14 1995-03-07 North Carolina State University Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up
JPH06244430A (ja) * 1993-02-16 1994-09-02 Fuji Electric Co Ltd 半導体装置
JP3085037B2 (ja) * 1993-08-18 2000-09-04 富士電機株式会社 絶縁ゲートバイポーラトランジスタ
US5399892A (en) * 1993-11-29 1995-03-21 Harris Corporation Mesh geometry for MOS-gated semiconductor devices
US5471075A (en) * 1994-05-26 1995-11-28 North Carolina State University Dual-channel emitter switched thyristor with trench gate
US5488236A (en) * 1994-05-26 1996-01-30 North Carolina State University Latch-up resistant bipolar transistor with trench IGFET and buried collector
US5548133A (en) * 1994-09-19 1996-08-20 International Rectifier Corporation IGBT with increased ruggedness
DE69515876T2 (de) * 1995-11-06 2000-08-17 St Microelectronics Srl Leistungsbauelement in MOS-Technologie mit niedrigem Ausgangswiderstand und geringer Kapazität und dessen Herstellungsverfahren
KR970054363A (ko) * 1995-12-30 1997-07-31 김광호 다이오드를 내장한 절연게이트 바이폴라 트랜지스터 및 그 제조방법
KR100206555B1 (ko) * 1995-12-30 1999-07-01 윤종용 전력용 트랜지스터
US5668026A (en) * 1996-03-06 1997-09-16 Megamos Corporation DMOS fabrication process implemented with reduced number of masks
US5742076A (en) * 1996-06-05 1998-04-21 North Carolina State University Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance

Also Published As

Publication number Publication date
JP4625179B2 (ja) 2011-02-02
US6121089A (en) 2000-09-19
KR100512646B1 (ko) 2005-09-07
EP1027725A2 (de) 2000-08-16
JP2001521281A (ja) 2001-11-06
WO1999021215A2 (en) 1999-04-29
KR20010030942A (ko) 2001-04-16
EP1027725B1 (de) 2008-12-10
WO1999021215A3 (en) 1999-10-14

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