DE69736529D1 - Halbleiteranordnung für hochspannung - Google Patents
Halbleiteranordnung für hochspannungInfo
- Publication number
- DE69736529D1 DE69736529D1 DE69736529T DE69736529T DE69736529D1 DE 69736529 D1 DE69736529 D1 DE 69736529D1 DE 69736529 T DE69736529 T DE 69736529T DE 69736529 T DE69736529 T DE 69736529T DE 69736529 D1 DE69736529 D1 DE 69736529D1
- Authority
- DE
- Germany
- Prior art keywords
- high voltage
- semiconductor arrangement
- semiconductor
- arrangement
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9602881A SE513283C2 (sv) | 1996-07-26 | 1996-07-26 | MOS-transistorstruktur med utsträckt driftregion |
SE9602881 | 1996-07-26 | ||
PCT/SE1997/001223 WO1998005076A2 (en) | 1996-07-26 | 1997-07-04 | Semiconductor component for high voltage |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69736529D1 true DE69736529D1 (de) | 2006-09-28 |
DE69736529T2 DE69736529T2 (de) | 2007-08-16 |
Family
ID=20403485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69736529T Expired - Fee Related DE69736529T2 (de) | 1996-07-26 | 1997-07-04 | Halbleiteranordnung für hochspannung |
Country Status (11)
Country | Link |
---|---|
US (1) | US5844272A (de) |
EP (1) | EP0958613B1 (de) |
JP (1) | JP2001502846A (de) |
KR (1) | KR100311589B1 (de) |
CN (1) | CN1134846C (de) |
AU (1) | AU3711897A (de) |
CA (1) | CA2261753A1 (de) |
DE (1) | DE69736529T2 (de) |
SE (1) | SE513283C2 (de) |
TW (1) | TW335513B (de) |
WO (1) | WO1998005076A2 (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19612950C1 (de) * | 1996-04-01 | 1997-07-31 | Siemens Ag | Schaltungsstruktur mit mindestens einem MOS-Transistor und Verfahren zu deren Herstellung |
US5804496A (en) * | 1997-01-08 | 1998-09-08 | Advanced Micro Devices | Semiconductor device having reduced overlap capacitance and method of manufacture thereof |
JP3443355B2 (ja) * | 1999-03-12 | 2003-09-02 | 三洋電機株式会社 | 半導体装置の製造方法 |
SE9901575L (sv) * | 1999-05-03 | 2000-11-04 | Eklund Klas Haakan | Halvledarelement |
US6784059B1 (en) * | 1999-10-29 | 2004-08-31 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing thereof |
JP3608456B2 (ja) * | 1999-12-08 | 2005-01-12 | セイコーエプソン株式会社 | Soi構造のmis電界効果トランジスタの製造方法 |
EP1111687B1 (de) * | 1999-12-22 | 2011-06-22 | Panasonic Electric Works Co., Ltd. | MOS-Halbleiteranordnung |
TW446192U (en) * | 2000-05-04 | 2001-07-11 | United Microelectronics Corp | Electrostatic discharge protection circuit |
JP2002217407A (ja) * | 2001-01-16 | 2002-08-02 | Sanyo Electric Co Ltd | 半導体装置とその製造方法 |
SE526207C2 (sv) * | 2003-07-18 | 2005-07-26 | Infineon Technologies Ag | Ldmos-transistoranordning, integrerad krets och framställningsmetod därav |
US20050072975A1 (en) * | 2003-10-02 | 2005-04-07 | Shiao-Shien Chen | Partially depleted soi mosfet device |
CN100376020C (zh) * | 2003-12-29 | 2008-03-19 | 中芯国际集成电路制造(上海)有限公司 | 一种制作具有延伸闸极晶体管的方法 |
JP2006140211A (ja) * | 2004-11-10 | 2006-06-01 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置およびその製造方法 |
US8110868B2 (en) * | 2005-07-27 | 2012-02-07 | Infineon Technologies Austria Ag | Power semiconductor component with a low on-state resistance |
DE102006009942B4 (de) * | 2006-03-03 | 2012-02-09 | Infineon Technologies Austria Ag | Laterales Halbleiterbauelement mit niedrigem Einschaltwiderstand |
WO2007012490A2 (de) | 2005-07-27 | 2007-02-01 | Infineon Technologies Austria Ag | Halbleiterbauelement mit einer driftzone und einer driftsteuerzone |
US8461648B2 (en) | 2005-07-27 | 2013-06-11 | Infineon Technologies Austria Ag | Semiconductor component with a drift region and a drift control region |
DE102005045910B4 (de) * | 2005-09-26 | 2010-11-11 | Infineon Technologies Austria Ag | Laterales SOI-Bauelement mit einem verringerten Einschaltwiderstand |
US8476709B2 (en) * | 2006-08-24 | 2013-07-02 | Infineon Technologies Ag | ESD protection device and method |
JP5627165B2 (ja) * | 2007-04-27 | 2014-11-19 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置及び半導体装置の製造方法 |
US7880224B2 (en) * | 2008-01-25 | 2011-02-01 | Infineon Technologies Austria Ag | Semiconductor component having discontinuous drift zone control dielectric arranged between drift zone and drift control zone and a method of making the same |
JP5206028B2 (ja) * | 2008-03-03 | 2013-06-12 | 株式会社デンソー | 半導体装置 |
WO2009133485A1 (en) * | 2008-04-30 | 2009-11-05 | Nxp B.V. | A field effect transistor and a method of manufacturing the same |
US20100127331A1 (en) * | 2008-11-26 | 2010-05-27 | Albert Ratnakumar | Asymmetric metal-oxide-semiconductor transistors |
US8735983B2 (en) * | 2008-11-26 | 2014-05-27 | Altera Corporation | Integrated circuit transistors with multipart gate conductors |
US20100237439A1 (en) * | 2009-03-18 | 2010-09-23 | Ming-Cheng Lee | High-voltage metal-dielectric-semiconductor device and method of the same |
US8097880B2 (en) | 2009-04-09 | 2012-01-17 | Infineon Technologies Austria Ag | Semiconductor component including a lateral transistor component |
JP5703829B2 (ja) * | 2011-02-24 | 2015-04-22 | サンケン電気株式会社 | 半導体装置 |
US9070784B2 (en) | 2011-07-22 | 2015-06-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal gate structure of a CMOS semiconductor device and method of forming the same |
JP5537683B2 (ja) * | 2013-01-21 | 2014-07-02 | 株式会社東芝 | 半導体装置 |
US9236449B2 (en) * | 2013-07-11 | 2016-01-12 | Globalfoundries Inc. | High voltage laterally diffused metal oxide semiconductor |
CN105556647B (zh) * | 2013-07-19 | 2017-06-13 | 日产自动车株式会社 | 半导体装置及其制造方法 |
JP6318786B2 (ja) * | 2014-04-04 | 2018-05-09 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
TWI550883B (zh) * | 2014-07-07 | 2016-09-21 | 漢磊科技股份有限公司 | 橫向雙擴散金氧半導體元件及減少表面電場的結構 |
CN104183646A (zh) * | 2014-08-29 | 2014-12-03 | 电子科技大学 | 一种具有延伸栅结构的soi ldmos器件 |
TWI548029B (zh) | 2014-10-27 | 2016-09-01 | 漢磊科技股份有限公司 | 半導體元件及其操作方法以及抑制漏電的結構 |
CN105047702B (zh) * | 2015-07-13 | 2018-08-24 | 电子科技大学 | 一种ldmos器件的制造方法 |
US11600681B2 (en) * | 2019-08-23 | 2023-03-07 | Boe Technology Group Co., Ltd. | Display device and manufacturing method thereof |
CN111725071B (zh) * | 2020-07-20 | 2021-06-18 | 西安电子科技大学 | 一种硅基结型积累层和缓冲层横向双扩散场效应晶体管及其制作方法 |
CN111725320A (zh) * | 2020-07-20 | 2020-09-29 | 西安电子科技大学 | 一种结型积累层碳化硅横向场效应晶体管及其制作方法 |
CN111755524B (zh) * | 2020-07-20 | 2022-06-07 | 西安电子科技大学 | 一种肖特基积累层碳化硅横向场效应晶体管及其制作方法 |
US11664436B2 (en) * | 2021-03-01 | 2023-05-30 | Wolfspeed, Inc. | Semiconductor devices having gate resistors with low variation in resistance values |
CN113270477A (zh) * | 2021-04-08 | 2021-08-17 | 西安电子科技大学 | 一种降低主结体电场的积累场效应晶体管及其制作方法 |
CN113707709B (zh) * | 2021-07-26 | 2023-03-14 | 西安电子科技大学 | 具有积累层外延栅极MIS结构AlGaN/GaN高电子迁移率晶体管及其制作方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4288803A (en) * | 1979-08-08 | 1981-09-08 | Xerox Corporation | High voltage MOSFET with doped ring structure |
JPS577161A (en) * | 1980-06-16 | 1982-01-14 | Toshiba Corp | Mos semiconductor device |
US4593300A (en) * | 1984-10-31 | 1986-06-03 | The Regents Of The University Of Minnesota | Folded logic gate |
US5006913A (en) * | 1988-11-05 | 1991-04-09 | Mitsubishi Denki Kabushiki Kaisha | Stacked type semiconductor device |
SE464949B (sv) * | 1989-11-09 | 1991-07-01 | Asea Brown Boveri | Halvledarswitch |
JPH0548091A (ja) * | 1991-08-20 | 1993-02-26 | Yokogawa Electric Corp | 高耐圧mosfet |
US5306652A (en) * | 1991-12-30 | 1994-04-26 | Texas Instruments Incorporated | Lateral double diffused insulated gate field effect transistor fabrication process |
JPH06151737A (ja) * | 1992-10-30 | 1994-05-31 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3216743B2 (ja) * | 1993-04-22 | 2001-10-09 | 富士電機株式会社 | トランジスタ用保護ダイオード |
US5517046A (en) * | 1993-11-19 | 1996-05-14 | Micrel, Incorporated | High voltage lateral DMOS device with enhanced drift region |
US5356822A (en) * | 1994-01-21 | 1994-10-18 | Alliedsignal Inc. | Method for making all complementary BiCDMOS devices |
JP3250419B2 (ja) * | 1994-06-15 | 2002-01-28 | 株式会社デンソー | 半導体装置およびその製造方法 |
-
1996
- 1996-07-26 SE SE9602881A patent/SE513283C2/sv not_active IP Right Cessation
-
1997
- 1997-07-04 EP EP97933941A patent/EP0958613B1/de not_active Expired - Lifetime
- 1997-07-04 CN CNB971981892A patent/CN1134846C/zh not_active Expired - Fee Related
- 1997-07-04 AU AU37118/97A patent/AU3711897A/en not_active Abandoned
- 1997-07-04 WO PCT/SE1997/001223 patent/WO1998005076A2/en active IP Right Grant
- 1997-07-04 DE DE69736529T patent/DE69736529T2/de not_active Expired - Fee Related
- 1997-07-04 CA CA002261753A patent/CA2261753A1/en not_active Abandoned
- 1997-07-04 JP JP10508732A patent/JP2001502846A/ja active Pending
- 1997-07-16 TW TW086110091A patent/TW335513B/zh not_active IP Right Cessation
- 1997-07-25 US US08/900,829 patent/US5844272A/en not_active Expired - Fee Related
-
1999
- 1999-01-26 KR KR1019997000637A patent/KR100311589B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW335513B (en) | 1998-07-01 |
JP2001502846A (ja) | 2001-02-27 |
CA2261753A1 (en) | 1998-02-05 |
WO1998005076A3 (en) | 1998-03-05 |
KR20000029578A (ko) | 2000-05-25 |
EP0958613B1 (de) | 2006-08-16 |
DE69736529T2 (de) | 2007-08-16 |
EP0958613A2 (de) | 1999-11-24 |
SE9602881D0 (sv) | 1996-07-26 |
WO1998005076A2 (en) | 1998-02-05 |
SE9602881L (sv) | 1998-01-27 |
US5844272A (en) | 1998-12-01 |
CN1231770A (zh) | 1999-10-13 |
AU3711897A (en) | 1998-02-20 |
KR100311589B1 (ko) | 2001-11-03 |
SE513283C2 (sv) | 2000-08-14 |
CN1134846C (zh) | 2004-01-14 |
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