DE69734078D1 - Verfahren zur Reinigung einer porösen Fläche eines Halbleitersubstrats - Google Patents

Verfahren zur Reinigung einer porösen Fläche eines Halbleitersubstrats

Info

Publication number
DE69734078D1
DE69734078D1 DE69734078T DE69734078T DE69734078D1 DE 69734078 D1 DE69734078 D1 DE 69734078D1 DE 69734078 T DE69734078 T DE 69734078T DE 69734078 T DE69734078 T DE 69734078T DE 69734078 D1 DE69734078 D1 DE 69734078D1
Authority
DE
Germany
Prior art keywords
cleaning
semiconductor substrate
porous surface
porous
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69734078T
Other languages
English (en)
Other versions
DE69734078T2 (de
Inventor
Yasutomo Fujiyama
Hideya Kumomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69734078D1 publication Critical patent/DE69734078D1/de
Publication of DE69734078T2 publication Critical patent/DE69734078T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE69734078T 1996-05-28 1997-05-28 Verfahren zur Reinigung einer porösen Fläche eines Halbleitersubstrats Expired - Lifetime DE69734078T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP15763296 1996-05-28
JP15763296 1996-05-28
JP14283696 1996-06-05
JP14283696 1996-06-05
JP14283796 1996-06-05
JP14283796 1996-06-05

Publications (2)

Publication Number Publication Date
DE69734078D1 true DE69734078D1 (de) 2005-10-06
DE69734078T2 DE69734078T2 (de) 2006-07-06

Family

ID=27318518

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69734078T Expired - Lifetime DE69734078T2 (de) 1996-05-28 1997-05-28 Verfahren zur Reinigung einer porösen Fläche eines Halbleitersubstrats

Country Status (7)

Country Link
EP (1) EP0810643B1 (de)
KR (1) KR100370312B1 (de)
CN (1) CN1132229C (de)
CA (1) CA2206139C (de)
DE (1) DE69734078T2 (de)
SG (1) SG66370A1 (de)
TW (1) TW355815B (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6001189A (en) 1996-09-30 1999-12-14 Micron Technology, Inc. Method for reducing gaseous species of contamination in wet processes
JPH10223585A (ja) 1997-02-04 1998-08-21 Canon Inc ウェハ処理装置及びその方法並びにｓｏｉウェハの製造方法
US6391067B2 (en) 1997-02-04 2002-05-21 Canon Kabushiki Kaisha Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus
JP3595441B2 (ja) * 1997-12-29 2004-12-02 三菱電機株式会社 塩酸過水を用いた洗浄方法
JP3218564B2 (ja) * 1998-01-14 2001-10-15 キヤノン株式会社 多孔質領域の除去方法及び半導体基体の製造方法
US6021789A (en) * 1998-11-10 2000-02-08 International Business Machines Corporation Wafer cleaning system with progressive megasonic wave
CN1071713C (zh) * 1998-11-11 2001-09-26 华南师范大学华南量子电子学研究所 砷化镓、磷化镓衬底干处理方法
US6410436B2 (en) 1999-03-26 2002-06-25 Canon Kabushiki Kaisha Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate
EP1310988B1 (de) 2000-06-23 2010-05-26 Fujitsu Limited Verfahren zur herstellung eines halbleiterelement
US20100224215A1 (en) * 2009-03-06 2010-09-09 Imec Method for Reducing the Damage Induced by a Physical Force Assisted Cleaning
JP2013157443A (ja) * 2012-01-30 2013-08-15 Siltronic Ag 洗浄方法
JP5872382B2 (ja) * 2012-05-24 2016-03-01 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ 超音波洗浄方法
CN103736690B (zh) * 2013-12-31 2018-12-18 上海集成电路研发中心有限公司 硅片清洗方法
CN105618423A (zh) * 2014-10-15 2016-06-01 北京华兴太极信息科技有限责任公司 多层印制板去除孔壁钻污生产线用超声震动清洗处理方法
JP6658354B2 (ja) * 2016-06-30 2020-03-04 株式会社Sumco 試料表面の作製方法、試料表面の分析方法、電界支援酸化用プローブおよびこれを備えた走査型プローブ顕微鏡
CN106925565B (zh) * 2017-02-09 2018-08-24 同济大学 一种lbo晶体的刻蚀清洗方法
US20210035821A1 (en) * 2018-01-23 2021-02-04 Acm Research (Shanghai) Inc. Methods and apparatus for cleaning substrates
SG11202007405TA (en) 2018-02-07 2020-09-29 Acm Res Shanghai Inc Method and apparatus for cleaning substrates
CN110624893B (zh) * 2019-09-25 2022-06-14 上海华力集成电路制造有限公司 一种兆声波组合气体喷雾清洗装置及其应用
CN111085497A (zh) * 2019-12-18 2020-05-01 武汉百臻半导体科技有限公司 一种多晶硅片清洗***及其清洗方法
CN111659640B (zh) * 2020-05-14 2022-03-18 富乐德科技发展（大连）有限公司 半导体设备腔体内铝基材多孔分气装置超洁净清洗工艺
CN112452918A (zh) * 2020-10-30 2021-03-09 怀化市盛德生物科技有限责任公司 一种农业产品进料清洗清洁机构
CN112921326B (zh) * 2021-01-22 2022-11-08 广东威圳兴技术有限公司 一种汽车零件压铸铝合金表面处理工艺
CN113289972B (zh) * 2021-04-27 2022-09-27 华能阜新风力发电有限责任公司 一种适用于散热片的节能清洁装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62198127A (ja) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd 半導体ウエハの洗浄方法
JPH0314230A (ja) * 1989-06-13 1991-01-22 Toshiba Corp 半導体ウェーハの洗浄方法及び装置
JP2984348B2 (ja) * 1990-10-05 1999-11-29 株式会社東芝 半導体ウェーハの処理方法
JP3136606B2 (ja) * 1990-10-30 2001-02-19 ソニー株式会社 ウエハの洗浄方法
JPH0661859B2 (ja) * 1991-02-28 1994-08-17 清二 加川 多孔質フィルムの製造装置
US5331180A (en) * 1992-04-30 1994-07-19 Fujitsu Limited Porous semiconductor light emitting device
JPH06275866A (ja) * 1993-03-19 1994-09-30 Fujitsu Ltd ポーラス半導体発光装置と製造方法
TW212146B (en) * 1992-05-25 1993-09-01 Yoshihide Shibano Supersonic waves washing method
JPH06168660A (ja) * 1992-11-30 1994-06-14 Sony Corp 含浸形カソード及びその製造方法
JPH06254521A (ja) * 1993-03-08 1994-09-13 Olympus Optical Co Ltd 脱脂洗浄方法

Also Published As

Publication number Publication date
CA2206139A1 (en) 1997-11-28
EP0810643A3 (de) 1998-03-11
EP0810643A2 (de) 1997-12-03
CA2206139C (en) 2003-07-15
CN1166693A (zh) 1997-12-03
KR100370312B1 (ko) 2003-04-10
KR970077290A (ko) 1997-12-12
TW355815B (en) 1999-04-11
CN1132229C (zh) 2003-12-24
DE69734078T2 (de) 2006-07-06
SG66370A1 (en) 1999-07-20
EP0810643B1 (de) 2005-08-31

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