DE69728312D1 - Halbleiterspeicheranordnung - Google Patents

Halbleiterspeicheranordnung

Info

Publication number
DE69728312D1
DE69728312D1 DE69728312T DE69728312T DE69728312D1 DE 69728312 D1 DE69728312 D1 DE 69728312D1 DE 69728312 T DE69728312 T DE 69728312T DE 69728312 T DE69728312 T DE 69728312T DE 69728312 D1 DE69728312 D1 DE 69728312D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69728312T
Other languages
English (en)
Other versions
DE69728312T2 (de
Inventor
Yasuyuki Kai
Katsushi Nagaba
Shigeo Ohshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69728312D1 publication Critical patent/DE69728312D1/de
Publication of DE69728312T2 publication Critical patent/DE69728312T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE69728312T 1996-01-31 1997-01-29 Halbleiterspeicheranordnung Expired - Lifetime DE69728312T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1572796 1996-01-31
JP01572796A JP3277112B2 (ja) 1996-01-31 1996-01-31 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69728312D1 true DE69728312D1 (de) 2004-05-06
DE69728312T2 DE69728312T2 (de) 2005-02-17

Family

ID=11896798

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69728312T Expired - Lifetime DE69728312T2 (de) 1996-01-31 1997-01-29 Halbleiterspeicheranordnung

Country Status (6)

Country Link
US (1) US5841730A (de)
EP (1) EP0788107B1 (de)
JP (1) JP3277112B2 (de)
KR (1) KR100272142B1 (de)
DE (1) DE69728312T2 (de)
TW (1) TW374931B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1186547A (ja) * 1997-08-30 1999-03-30 Toshiba Corp 半導体集積回路装置
JP3223964B2 (ja) * 1998-04-03 2001-10-29 日本電気株式会社 半導体記憶装置
JP3244048B2 (ja) * 1998-05-19 2002-01-07 日本電気株式会社 半導体記憶装置
US6115308A (en) * 1999-06-17 2000-09-05 International Business Machines Corporation Sense amplifier and method of using the same with pipelined read, restore and write operations
DE19933540C2 (de) * 1999-07-16 2001-10-04 Infineon Technologies Ag Synchroner integrierter Speicher
US6532180B2 (en) 2001-06-20 2003-03-11 Micron Technology, Inc. Write data masking for higher speed DRAMs
US7428168B2 (en) * 2005-09-28 2008-09-23 Hynix Semiconductor Inc. Semiconductor memory device sharing a data line sense amplifier and a write driver in order to reduce a chip size
KR101239226B1 (ko) * 2007-08-02 2013-03-06 삼성전자주식회사 언먹스드 비트라인 스킴을 위한 기입 구동회로

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07118196B2 (ja) * 1988-12-28 1995-12-18 株式会社東芝 スタティック型半導体メモリ
JPH02218092A (ja) * 1989-02-18 1990-08-30 Sony Corp 半導体メモリ装置
US5416743A (en) * 1993-12-10 1995-05-16 Mosaid Technologies Incorporated Databus architecture for accelerated column access in RAM
JP2906957B2 (ja) * 1993-12-15 1999-06-21 日本電気株式会社 半導体メモリ装置
JP2734957B2 (ja) * 1993-12-24 1998-04-02 日本電気株式会社 半導体記憶回路の制御方法
US5497115A (en) * 1994-04-29 1996-03-05 Mosaid Technologies Incorporated Flip-flop circuit having low standby power for driving synchronous dynamic random access memory
JP2697633B2 (ja) * 1994-09-30 1998-01-14 日本電気株式会社 同期型半導体記憶装置
JP2697634B2 (ja) * 1994-09-30 1998-01-14 日本電気株式会社 同期型半導体記憶装置
JPH08221981A (ja) * 1994-12-15 1996-08-30 Mitsubishi Electric Corp 同期型半導体記憶装置

Also Published As

Publication number Publication date
EP0788107A2 (de) 1997-08-06
TW374931B (en) 1999-11-21
KR970060224A (ko) 1997-08-12
EP0788107B1 (de) 2004-03-31
EP0788107A3 (de) 1999-06-02
JP3277112B2 (ja) 2002-04-22
DE69728312T2 (de) 2005-02-17
KR100272142B1 (ko) 2000-12-01
JPH09213076A (ja) 1997-08-15
US5841730A (en) 1998-11-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition