DE69716367D1 - Herstellung von Siliziumsubstraten - Google Patents
Herstellung von SiliziumsubstratenInfo
- Publication number
- DE69716367D1 DE69716367D1 DE69716367T DE69716367T DE69716367D1 DE 69716367 D1 DE69716367 D1 DE 69716367D1 DE 69716367 T DE69716367 T DE 69716367T DE 69716367 T DE69716367 T DE 69716367T DE 69716367 D1 DE69716367 D1 DE 69716367D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- silicon substrates
- substrates
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22551796A JP3336866B2 (ja) | 1996-08-27 | 1996-08-27 | 気相成長用シリコン単結晶基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69716367D1 true DE69716367D1 (de) | 2002-11-21 |
DE69716367T2 DE69716367T2 (de) | 2003-03-13 |
Family
ID=16830558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69716367T Expired - Fee Related DE69716367T2 (de) | 1996-08-27 | 1997-08-19 | Herstellung von Siliziumsubstraten |
Country Status (5)
Country | Link |
---|---|
US (1) | US5882401A (de) |
EP (1) | EP0826801B1 (de) |
JP (1) | JP3336866B2 (de) |
KR (1) | KR100496213B1 (de) |
DE (1) | DE69716367T2 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998005063A1 (fr) * | 1996-07-29 | 1998-02-05 | Sumitomo Sitix Corporation | Plaquette epitaxiale en silicium et son procede de fabrication |
JP2000077372A (ja) * | 1998-08-31 | 2000-03-14 | Sumitomo Metal Ind Ltd | 気相成長用半導体ウェーハの製造方法 |
US7145739B1 (en) * | 2002-03-07 | 2006-12-05 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Lightweight optical mirrors formed in single crystal substrate |
WO2003077297A1 (fr) * | 2002-03-14 | 2003-09-18 | Disco Corporation | Procede de meulage de la surface arriere d'une plaquette semi-conductrice |
JP4016823B2 (ja) * | 2002-12-06 | 2007-12-05 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法 |
JP4682508B2 (ja) * | 2003-11-14 | 2011-05-11 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法 |
US7250358B2 (en) * | 2004-08-06 | 2007-07-31 | Globitech Incorporated | Wafer for preventing the formation of silicon nodules and method for preventing the formation of silicon nodules |
JP4815801B2 (ja) * | 2004-12-28 | 2011-11-16 | 信越半導体株式会社 | シリコンウエーハの研磨方法および製造方法および円板状ワークの研磨装置ならびにシリコンウエーハ |
US8241423B2 (en) | 2006-09-29 | 2012-08-14 | Sumco Techxiv Corporation | Silicon single crystal substrate and manufacture thereof |
KR100842674B1 (ko) | 2006-12-20 | 2008-06-30 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조방법 |
KR100844435B1 (ko) * | 2006-12-29 | 2008-07-08 | 주식회사 실트론 | 에피택셜 웨이퍼의 제조방법 |
US8214935B2 (en) * | 2007-01-31 | 2012-07-10 | B & S Plastics, Inc. | Pop-up fountains |
KR100919932B1 (ko) * | 2007-10-05 | 2009-10-07 | 주식회사 실트론 | 실리콘 에피택셜 단결정 기판의 제조방법 및 에칭장치 |
KR100931190B1 (ko) * | 2007-12-26 | 2009-12-10 | 주식회사 실트론 | 웨이퍼 식각 장치 및 그를 이용한 웨이퍼 처리 방법 |
JP5795461B2 (ja) * | 2009-08-19 | 2015-10-14 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
JP5245180B2 (ja) * | 2009-12-01 | 2013-07-24 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2011187887A (ja) * | 2010-03-11 | 2011-09-22 | Toyota Motor Corp | エピタキシャルウエハの製造方法 |
JP5757088B2 (ja) * | 2011-01-05 | 2015-07-29 | 株式会社Sumco | エピタキシャルウェーハの製造方法、エピタキシャルウェーハ |
US20130028829A1 (en) * | 2011-07-28 | 2013-01-31 | Hagopian John G | System and method for growth of enhanced adhesion carbon nanotubes on substrates |
JP6015127B2 (ja) * | 2012-05-23 | 2016-10-26 | 株式会社デンソー | 半導体装置の製造方法およびそれに用いられる半導体基板 |
JP6108609B2 (ja) * | 2013-04-25 | 2017-04-05 | クアーズテック株式会社 | 窒化物半導体基板 |
JP6157381B2 (ja) * | 2014-03-04 | 2017-07-05 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ |
JP6676365B2 (ja) * | 2015-12-21 | 2020-04-08 | キヤノン株式会社 | 撮像装置の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0624199B2 (ja) * | 1982-07-30 | 1994-03-30 | 株式会社日立製作所 | ウエハの加工方法 |
JP2546986B2 (ja) * | 1985-11-29 | 1996-10-23 | 九州電子金属 株式会社 | 半導体ウエ−ハ及びその製造方法 |
JP2839801B2 (ja) * | 1992-09-18 | 1998-12-16 | 三菱マテリアル株式会社 | ウェーハの製造方法 |
DE4307527A1 (de) * | 1993-03-10 | 1994-09-15 | Basf Magnetics Gmbh | Verfahren sowie Vorrichtung zur Bearbeitung der Oberfläche von flexiblen bandförmigen Materialbahnen |
JP2832138B2 (ja) * | 1993-09-30 | 1998-12-02 | 信越半導体株式会社 | ウェーハ外周部の研磨装置 |
JPH08294872A (ja) * | 1995-04-27 | 1996-11-12 | Fuji Photo Film Co Ltd | 研磨体 |
-
1996
- 1996-08-27 JP JP22551796A patent/JP3336866B2/ja not_active Expired - Fee Related
-
1997
- 1997-08-08 US US08/908,963 patent/US5882401A/en not_active Expired - Lifetime
- 1997-08-19 EP EP97306288A patent/EP0826801B1/de not_active Expired - Lifetime
- 1997-08-19 DE DE69716367T patent/DE69716367T2/de not_active Expired - Fee Related
- 1997-08-26 KR KR1019970040902A patent/KR100496213B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH1070080A (ja) | 1998-03-10 |
EP0826801A3 (de) | 1998-11-11 |
KR100496213B1 (ko) | 2005-09-20 |
US5882401A (en) | 1999-03-16 |
DE69716367T2 (de) | 2003-03-13 |
JP3336866B2 (ja) | 2002-10-21 |
EP0826801A2 (de) | 1998-03-04 |
EP0826801B1 (de) | 2002-10-16 |
KR19980019010A (ko) | 1998-06-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |