DE69715109D1 - TRIAC-Anordnung, deren Gatterreferenzspannung an gemeinsame Elektrode auf Rückseite gelegt wird - Google Patents
TRIAC-Anordnung, deren Gatterreferenzspannung an gemeinsame Elektrode auf Rückseite gelegt wirdInfo
- Publication number
- DE69715109D1 DE69715109D1 DE69715109T DE69715109T DE69715109D1 DE 69715109 D1 DE69715109 D1 DE 69715109D1 DE 69715109 T DE69715109 T DE 69715109T DE 69715109 T DE69715109 T DE 69715109T DE 69715109 D1 DE69715109 D1 DE 69715109D1
- Authority
- DE
- Germany
- Prior art keywords
- reference voltage
- common electrode
- gate reference
- triac arrangement
- triac
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9608300A FR2750536B1 (fr) | 1996-06-28 | 1996-06-28 | Reseau de triacs a gachettes referencees par rapport a une electrode commune de face opposee |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69715109D1 true DE69715109D1 (de) | 2002-10-10 |
DE69715109T2 DE69715109T2 (de) | 2003-04-30 |
Family
ID=9493686
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69715109T Expired - Fee Related DE69715109T2 (de) | 1996-06-28 | 1997-06-25 | TRIAC-Anordnung, deren Gatterreferenzspannung an gemeinsame Elektrode auf Rückseite gelegt wird |
Country Status (5)
Country | Link |
---|---|
US (1) | US6034381A (de) |
EP (1) | EP0817277B1 (de) |
JP (1) | JP4048577B2 (de) |
DE (1) | DE69715109T2 (de) |
FR (1) | FR2750536B1 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6480056B1 (en) * | 1997-06-09 | 2002-11-12 | Sgs-Thomson Microelectronics S.A. | Network of triacs with gates referenced with respect to a common opposite face electrode |
DE69839570D1 (de) * | 1998-09-10 | 2008-07-10 | Mitsubishi Electric Corp | Halbleiteranordnung und dessen betriebsverfahren |
FR2797525B1 (fr) * | 1999-08-09 | 2001-10-12 | St Microelectronics Sa | Commutateur bidirectionnel a performances en commutation ameliorees |
FR2797524B1 (fr) * | 1999-08-09 | 2001-10-12 | St Microelectronics Sa | Commutateur statique bidirectionnel sensible |
FR2800513B1 (fr) | 1999-11-03 | 2002-03-29 | St Microelectronics Sa | Detecteur d'etat de composant de puissance |
FR2818805B1 (fr) * | 2000-12-21 | 2003-04-04 | St Microelectronics Sa | Commutateur statique bidirectionnel sensible |
FR2818806B1 (fr) | 2000-12-21 | 2003-03-21 | St Microelectronics Sa | Commutateur electronique bidirectionnel bistable a commande par implusions |
FR2834386B1 (fr) * | 2001-12-28 | 2004-04-02 | St Microelectronics Sa | Interrupteur bidirectionnel commande en tension |
FR2879350A1 (fr) * | 2004-12-15 | 2006-06-16 | St Microelectronics Sa | Commutateur bidirectionnel a commande en tension |
US7582917B2 (en) * | 2006-03-10 | 2009-09-01 | Bae Systems Information And Electronic Systems Integration Inc. | Monolithically integrated light-activated thyristor and method |
FR2959598B1 (fr) | 2010-04-29 | 2012-12-07 | St Microelectronics Tours Sas | Commutateur bidirectionnel a commande en q1, q4 |
FR2960342B1 (fr) * | 2010-05-18 | 2012-06-08 | St Microelectronics Tours Sas | Commutateur bidirectionnel a commande hf |
FR2974447A1 (fr) * | 2011-04-22 | 2012-10-26 | St Microelectronics Tours Sas | Structure d'amorcage et composant de protection comprenant une telle structure d'amorcage |
FR2982077B1 (fr) * | 2011-10-26 | 2013-11-15 | St Microelectronics Tours Sas | Triac a amplification de gachette |
FR3023060A1 (fr) * | 2014-06-26 | 2016-01-01 | St Microelectronics Tours Sas | Composant de protection contre des surtensions |
US9455253B2 (en) | 2014-07-23 | 2016-09-27 | Stmicroelectronics (Tours) Sas | Bidirectional switch |
US9722061B2 (en) | 2014-07-24 | 2017-08-01 | Stmicroelectronics (Tours) Sas | Bidirectional switch |
US10741548B2 (en) | 2015-04-13 | 2020-08-11 | Infineon Technologies Ag | Protection devices with trigger devices and methods of formation thereof |
DE102016204699B4 (de) | 2015-04-13 | 2020-07-30 | Infineon Technologies Ag | Schutzvorrichtungen mit Trigger-Vorrichtungen und Verfahren zu deren Bildung |
FR3076661A1 (fr) | 2018-01-05 | 2019-07-12 | Stmicroelectronics (Tours) Sas | Triode semiconductrice |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3409810A (en) * | 1964-03-31 | 1968-11-05 | Texas Instruments Inc | Gated symmetrical five layer switch with shorted emitters |
DE3240564A1 (de) * | 1982-11-03 | 1984-05-03 | Licentia Patent-Verwaltungs-Gmbh | Steuerbares halbleiterschaltelement |
JPH01286465A (ja) * | 1988-05-13 | 1989-11-17 | Toshiba Corp | 双方向制御整流半導体装置 |
JPH0621438A (ja) * | 1992-07-06 | 1994-01-28 | Toshiba Corp | 光点弧型トライアック装置およびその駆動方法 |
FR2726398B1 (fr) * | 1994-10-28 | 1997-01-17 | Sgs Thomson Microelectronics | Thyristor commandable par des niveaux logiques |
-
1996
- 1996-06-28 FR FR9608300A patent/FR2750536B1/fr not_active Expired - Fee Related
-
1997
- 1997-06-09 US US08/871,734 patent/US6034381A/en not_active Expired - Lifetime
- 1997-06-25 DE DE69715109T patent/DE69715109T2/de not_active Expired - Fee Related
- 1997-06-25 EP EP97410066A patent/EP0817277B1/de not_active Expired - Lifetime
- 1997-06-26 JP JP18458497A patent/JP4048577B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69715109T2 (de) | 2003-04-30 |
EP0817277B1 (de) | 2002-09-04 |
US6034381A (en) | 2000-03-07 |
JPH1074773A (ja) | 1998-03-17 |
JP4048577B2 (ja) | 2008-02-20 |
EP0817277A1 (de) | 1998-01-07 |
FR2750536B1 (fr) | 1998-12-18 |
FR2750536A1 (fr) | 1998-01-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |