FR2960342B1 - Commutateur bidirectionnel a commande hf - Google Patents

Commutateur bidirectionnel a commande hf

Info

Publication number
FR2960342B1
FR2960342B1 FR1053823A FR1053823A FR2960342B1 FR 2960342 B1 FR2960342 B1 FR 2960342B1 FR 1053823 A FR1053823 A FR 1053823A FR 1053823 A FR1053823 A FR 1053823A FR 2960342 B1 FR2960342 B1 FR 2960342B1
Authority
FR
France
Prior art keywords
bidirectional switch
control bidirectional
control
switch
bidirectional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1053823A
Other languages
English (en)
Other versions
FR2960342A1 (fr
Inventor
Samuel Menard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Tours SAS
Original Assignee
STMicroelectronics Tours SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Tours SAS filed Critical STMicroelectronics Tours SAS
Priority to FR1053823A priority Critical patent/FR2960342B1/fr
Priority to US13/104,254 priority patent/US8785970B2/en
Publication of FR2960342A1 publication Critical patent/FR2960342A1/fr
Application granted granted Critical
Publication of FR2960342B1 publication Critical patent/FR2960342B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H01L29/66386—Bidirectional thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR1053823A 2010-05-18 2010-05-18 Commutateur bidirectionnel a commande hf Expired - Fee Related FR2960342B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1053823A FR2960342B1 (fr) 2010-05-18 2010-05-18 Commutateur bidirectionnel a commande hf
US13/104,254 US8785970B2 (en) 2010-05-18 2011-05-10 HF-controlled bidirectional switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1053823A FR2960342B1 (fr) 2010-05-18 2010-05-18 Commutateur bidirectionnel a commande hf

Publications (2)

Publication Number Publication Date
FR2960342A1 FR2960342A1 (fr) 2011-11-25
FR2960342B1 true FR2960342B1 (fr) 2012-06-08

Family

ID=43309508

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1053823A Expired - Fee Related FR2960342B1 (fr) 2010-05-18 2010-05-18 Commutateur bidirectionnel a commande hf

Country Status (2)

Country Link
US (1) US8785970B2 (fr)
FR (1) FR2960342B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9722061B2 (en) * 2014-07-24 2017-08-01 Stmicroelectronics (Tours) Sas Bidirectional switch
FR3069957B1 (fr) * 2017-08-02 2020-10-02 St Microelectronics Tours Sas Commutateur unidirectionnel a gachette referencee a l'electrode principale de face arriere
FR3076661A1 (fr) 2018-01-05 2019-07-12 Stmicroelectronics (Tours) Sas Triode semiconductrice
FR3122769A1 (fr) * 2021-05-07 2022-11-11 Stmicroelectronics (Tours) Sas Dispositif de suppression de tensions transitoires unidirectionnel sans conduction en direct

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502482A (fr) * 1973-05-08 1975-01-11
US4994885A (en) * 1988-07-01 1991-02-19 Sanken Electric Co., Ltd. Bidirectional triode thyristor
FR2750536B1 (fr) * 1996-06-28 1998-12-18 Sgs Thomson Microelectronics Reseau de triacs a gachettes referencees par rapport a une electrode commune de face opposee
US6480056B1 (en) * 1997-06-09 2002-11-12 Sgs-Thomson Microelectronics S.A. Network of triacs with gates referenced with respect to a common opposite face electrode
US6933541B1 (en) * 1997-09-30 2005-08-23 Virginia Tech Intellectual Properties, Inc. Emitter turn-off thyristors (ETO)
FR2797524B1 (fr) * 1999-08-09 2001-10-12 St Microelectronics Sa Commutateur statique bidirectionnel sensible
FR2834385A1 (fr) * 2001-12-28 2003-07-04 St Microelectronics Sa Commutateur statique bidirectionnel sensible dans les quadrants q4 et q1
FR2879350A1 (fr) * 2004-12-15 2006-06-16 St Microelectronics Sa Commutateur bidirectionnel a commande en tension
EP1798772A2 (fr) * 2005-12-16 2007-06-20 St Microelectronics S.A. Thyristor optimisé pour une commande HF sinusoïdale
FR2895600A1 (fr) * 2005-12-26 2007-06-29 St Microelectronics Sa Commutateur bidirectionnel a commande hf

Also Published As

Publication number Publication date
FR2960342A1 (fr) 2011-11-25
US20110284921A1 (en) 2011-11-24
US8785970B2 (en) 2014-07-22

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20140131