DE69630864D1 - Verfahren zur Herstellung nichtflüchtiger Speicheranordnungen mit Tunneloxid - Google Patents
Verfahren zur Herstellung nichtflüchtiger Speicheranordnungen mit TunneloxidInfo
- Publication number
- DE69630864D1 DE69630864D1 DE69630864T DE69630864T DE69630864D1 DE 69630864 D1 DE69630864 D1 DE 69630864D1 DE 69630864 T DE69630864 T DE 69630864T DE 69630864 T DE69630864 T DE 69630864T DE 69630864 D1 DE69630864 D1 DE 69630864D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- storage devices
- volatile storage
- tunnel oxide
- tunnel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96830039A EP0788144B1 (de) | 1996-01-31 | 1996-01-31 | Verfahren zur Herstellung nichtflüchtiger Speicheranordnungen mit Tunneloxid |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69630864D1 true DE69630864D1 (de) | 2004-01-08 |
DE69630864T2 DE69630864T2 (de) | 2004-11-04 |
Family
ID=8225798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69630864T Expired - Fee Related DE69630864T2 (de) | 1996-01-31 | 1996-01-31 | Verfahren zur Herstellung nichtflüchtiger Speicheranordnungen mit Tunneloxid |
Country Status (3)
Country | Link |
---|---|
US (1) | US5817557A (de) |
EP (1) | EP0788144B1 (de) |
DE (1) | DE69630864T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19534780A1 (de) * | 1995-09-19 | 1997-03-20 | Siemens Ag | Verfahren zum Erzeugen sehr kleiner Strukturweiten auf einem Halbleitersubstrat |
US6127222A (en) * | 1997-12-16 | 2000-10-03 | Advanced Micro Devices, Inc. | Non-self-aligned side channel implants for flash memory cells |
US5972752A (en) * | 1997-12-29 | 1999-10-26 | United Semiconductor Corp. | Method of manufacturing a flash memory cell having a tunnel oxide with a long narrow top profile |
JP4081854B2 (ja) * | 1998-05-11 | 2008-04-30 | 沖電気工業株式会社 | 半導体装置の製造方法 |
KR100267010B1 (ko) * | 1998-06-15 | 2000-09-15 | 윤종용 | 반도체 장치의 제조 방법 |
US6573141B1 (en) * | 1999-03-12 | 2003-06-03 | Zilog, Inc. | In-situ etch and pre-clean for high quality thin oxides |
US6617204B2 (en) * | 2001-08-13 | 2003-09-09 | Macronix International Co., Ltd. | Method of forming the protective film to prevent nitride read only memory cell charging |
JP2005236062A (ja) * | 2004-02-20 | 2005-09-02 | Nec Electronics Corp | 不揮発性半導体記憶装置の製造方法 |
KR100572327B1 (ko) * | 2004-07-06 | 2006-04-18 | 삼성전자주식회사 | 불휘발성 메모리 소자의 터널링 절연막을 형성하는 방법 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2670262B2 (ja) * | 1987-01-09 | 1997-10-29 | 株式会社東芝 | 半導体装置の製造方法 |
JPS63246875A (ja) * | 1987-04-01 | 1988-10-13 | Mitsubishi Electric Corp | 半導体記憶装置とその製造方法 |
JPH067574B2 (ja) * | 1987-04-02 | 1994-01-26 | 日本電気株式会社 | 半導体装置 |
JP2577383B2 (ja) * | 1987-06-16 | 1997-01-29 | 株式会社東芝 | 不揮発性半導体メモリ装置の製造方法 |
DE69322487T2 (de) * | 1992-05-29 | 1999-06-10 | Citizen Watch Co., Ltd., Tokio/Tokyo | Verfahren zur herstellung einer nichtflüchtigen halbleiterspeicheranordnung |
US5580815A (en) * | 1993-08-12 | 1996-12-03 | Motorola Inc. | Process for forming field isolation and a structure over a semiconductor substrate |
US5429970A (en) * | 1994-07-18 | 1995-07-04 | United Microelectronics Corporation | Method of making flash EEPROM memory cell |
-
1996
- 1996-01-31 EP EP96830039A patent/EP0788144B1/de not_active Expired - Lifetime
- 1996-01-31 DE DE69630864T patent/DE69630864T2/de not_active Expired - Fee Related
-
1997
- 1997-01-31 US US08/792,893 patent/US5817557A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0788144A1 (de) | 1997-08-06 |
DE69630864T2 (de) | 2004-11-04 |
US5817557A (en) | 1998-10-06 |
EP0788144B1 (de) | 2003-11-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |