DE69707382D1 - Nichtflüchtige speicheranordnung mit schwebendem gate und verfahren zur herstellung - Google Patents

Nichtflüchtige speicheranordnung mit schwebendem gate und verfahren zur herstellung

Info

Publication number
DE69707382D1
DE69707382D1 DE69707382T DE69707382T DE69707382D1 DE 69707382 D1 DE69707382 D1 DE 69707382D1 DE 69707382 T DE69707382 T DE 69707382T DE 69707382 T DE69707382 T DE 69707382T DE 69707382 D1 DE69707382 D1 DE 69707382D1
Authority
DE
Germany
Prior art keywords
production
floating gate
volatile storage
storage arrangement
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69707382T
Other languages
English (en)
Other versions
DE69707382T2 (de
Inventor
Jozef Dormans
Dominicus Verhaar
Roger Cuppens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69707382D1 publication Critical patent/DE69707382D1/de
Application granted granted Critical
Publication of DE69707382T2 publication Critical patent/DE69707382T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/48—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a tunnel dielectric layer also being used as part of the peripheral transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
DE69707382T 1996-03-22 1997-03-10 Nichtflüchtige speicheranordnung mit schwebendem gate und verfahren zur herstellung Expired - Lifetime DE69707382T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP96200791 1996-03-22
PCT/IB1997/000227 WO1997036332A1 (en) 1996-03-22 1997-03-10 Floating gate non-volatile memory device, and a method of manufacturing the device

Publications (2)

Publication Number Publication Date
DE69707382D1 true DE69707382D1 (de) 2001-11-22
DE69707382T2 DE69707382T2 (de) 2002-06-27

Family

ID=8223809

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69707382T Expired - Lifetime DE69707382T2 (de) 1996-03-22 1997-03-10 Nichtflüchtige speicheranordnung mit schwebendem gate und verfahren zur herstellung

Country Status (8)

Country Link
US (1) US5879990A (de)
EP (1) EP0827634B1 (de)
JP (1) JP4223551B2 (de)
KR (1) KR100474631B1 (de)
CN (1) CN1143397C (de)
DE (1) DE69707382T2 (de)
TW (1) TW347567B (de)
WO (1) WO1997036332A1 (de)

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US5748547A (en) * 1996-05-24 1998-05-05 Shau; Jeng-Jye High performance semiconductor memory devices having multiple dimension bit lines
US7064376B2 (en) * 1996-05-24 2006-06-20 Jeng-Jye Shau High performance embedded semiconductor memory devices with multiple dimension first-level bit-lines
US20050036363A1 (en) * 1996-05-24 2005-02-17 Jeng-Jye Shau High performance embedded semiconductor memory devices with multiple dimension first-level bit-lines
JPH10154802A (ja) * 1996-11-22 1998-06-09 Toshiba Corp 不揮発性半導体記憶装置の製造方法
TW360951B (en) * 1997-04-01 1999-06-11 Nxp Bv Method of manufacturing a semiconductor device
US6040216A (en) * 1997-08-11 2000-03-21 Mosel Vitelic, Inc. Method (and device) for producing tunnel silicon oxynitride layer
US6127224A (en) * 1997-12-31 2000-10-03 Stmicroelectronics, S.R.L. Process for forming a non-volatile memory cell with silicided contacts
JPH11265987A (ja) * 1998-01-16 1999-09-28 Oki Electric Ind Co Ltd 不揮発性メモリ及びその製造方法
WO1999044238A1 (de) * 1998-02-27 1999-09-02 Infineon Technologies Ag Elektrisch programmierbare speicherzellenanordnung und verfahren zu deren herstellung
US6846739B1 (en) * 1998-02-27 2005-01-25 Micron Technology, Inc. MOCVD process using ozone as a reactant to deposit a metal oxide barrier layer
US6207991B1 (en) 1998-03-20 2001-03-27 Cypress Semiconductor Corp. Integrated non-volatile and CMOS memories having substantially the same thickness gates and methods of forming the same
US6124157A (en) * 1998-03-20 2000-09-26 Cypress Semiconductor Corp. Integrated non-volatile and random access memory and method of forming the same
US6034388A (en) * 1998-05-15 2000-03-07 International Business Machines Corporation Depleted polysilicon circuit element and method for producing the same
US6159795A (en) * 1998-07-02 2000-12-12 Advanced Micro Devices, Inc. Low voltage junction and high voltage junction optimization for flash memory
KR100297712B1 (ko) * 1998-07-23 2001-08-07 윤종용 고집적화를위한불휘발성메모리및그제조방법
TW479364B (en) * 1999-04-28 2002-03-11 Koninkl Philips Electronics Nv Method of manufacturing a semiconductor device comprising a field effect transistor
US6204159B1 (en) * 1999-07-09 2001-03-20 Advanced Micro Devices, Inc. Method of forming select gate to improve reliability and performance for NAND type flash memory devices
US6380031B1 (en) * 1999-09-08 2002-04-30 Texas Instruments Incorporated Method to form an embedded flash memory circuit with reduced process steps
US6329240B1 (en) 1999-10-07 2001-12-11 Monolithic System Technology, Inc. Non-volatile memory cell and methods of fabricating and operating same
US6457108B1 (en) 1999-10-07 2002-09-24 Monolithic System Technology, Inc. Method of operating a system-on-a-chip including entering a standby state in a non-volatile memory while operating the system-on-a-chip from a volatile memory
US6841821B2 (en) * 1999-10-07 2005-01-11 Monolithic System Technology, Inc. Non-volatile memory cell fabricated with slight modification to a conventional logic process and methods of operating same
US6287913B1 (en) 1999-10-26 2001-09-11 International Business Machines Corporation Double polysilicon process for providing single chip high performance logic and compact embedded memory structure
WO2001047012A1 (en) * 1999-12-21 2001-06-28 Koninklijke Philips Electronics N.V. Non-volatile memory cells and periphery
TW461093B (en) 2000-07-07 2001-10-21 United Microelectronics Corp Fabrication method for a high voltage electrical erasable programmable read only memory device
JP2002050705A (ja) * 2000-08-01 2002-02-15 Fujitsu Ltd 半導体記憶装置及びその製造方法
US7125763B1 (en) * 2000-09-29 2006-10-24 Spansion Llc Silicided buried bitline process for a non-volatile memory cell
US6518125B1 (en) * 2000-11-17 2003-02-11 Macronix International Co., Ltd. Method for forming flash memory with high coupling ratio
DE10101270A1 (de) 2001-01-12 2002-07-25 Infineon Technologies Ag Verfahren zur Herstellung von eingebetteten nichtflüchtigen Halbleiterspeicherzellen
JP2003023114A (ja) * 2001-07-05 2003-01-24 Fujitsu Ltd 半導体集積回路装置およびその製造方法
JP4672217B2 (ja) * 2001-09-04 2011-04-20 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置の製造方法
US6518614B1 (en) * 2002-02-19 2003-02-11 International Business Machines Corporation Embedded one-time programmable non-volatile memory using prompt shift device
US6858514B2 (en) * 2002-03-29 2005-02-22 Sharp Laboratories Of America, Inc. Low power flash memory cell and method
EP1518264A1 (de) * 2002-06-20 2005-03-30 Koninklijke Philips Electronics N.V. Leitfähige abstandsschichten - erweiterte floating-gates
US6909139B2 (en) 2003-06-27 2005-06-21 Infineon Technologies Ag One transistor flash memory cell
US6933199B1 (en) 2003-10-15 2005-08-23 Microchip Technology Incorporated Method for integrating non-volatile memory with high-voltage and low-voltage logic in a salicide process
KR100546392B1 (ko) 2003-11-01 2006-01-26 삼성전자주식회사 Ｅｐｒｏｍ 소자를 포함하는 반도체 소자와 그 제조 방법
US7652321B2 (en) 2004-03-08 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
CN100343978C (zh) * 2004-06-23 2007-10-17 上海先进半导体制造有限公司 制造双层多晶硅存储器元件的方法
KR100624463B1 (ko) * 2005-03-12 2006-09-19 삼성전자주식회사 노어 구조의 하이브리드 멀티비트 비휘발성 메모리 소자 및그 동작 방법
JP4753413B2 (ja) * 2005-03-02 2011-08-24 三洋電機株式会社 不揮発性半導体記憶装置及びその製造方法
US7382658B2 (en) * 2006-01-26 2008-06-03 Mosys, Inc. Non-volatile memory embedded in a conventional logic process and methods for operating same
US20070170489A1 (en) * 2006-01-26 2007-07-26 Fang Gang-Feng Method to increase charge retention of non-volatile memory manufactured in a single-gate logic process
JP2006203225A (ja) * 2006-02-22 2006-08-03 Renesas Technology Corp 半導体集積回路装置の製造方法
US20070196971A1 (en) * 2006-02-22 2007-08-23 Bohumil Lojek Scalable embedded EEPROM memory cell
US8629490B2 (en) * 2006-03-31 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode
WO2009004919A1 (en) 2007-06-29 2009-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8247861B2 (en) 2007-07-18 2012-08-21 Infineon Technologies Ag Semiconductor device and method of making same
CN101964328B (zh) * 2009-07-24 2012-12-12 中芯国际集成电路制造(上海)有限公司 半导体器件的制作方法
KR101708607B1 (ko) 2009-11-20 2017-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI490982B (zh) 2011-08-16 2015-07-01 Maxchip Electronics Corp 半導體結構及其製造方法
TWI485811B (zh) * 2012-07-18 2015-05-21 Maxchip Electronics Corp 半導體結構的製造方法
EP2747131B1 (de) * 2012-12-18 2015-07-01 Nxp B.V. Verfahren zur Verarbeitung eines Siliziumwafers
WO2016050927A1 (de) * 2014-10-02 2016-04-07 Elmos Semiconductor Aktiengesellschaft Flash-speicherzelle und verfahren zu ihrer herstellung
CN105789036B (zh) * 2014-12-25 2018-10-23 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法和电子装置
CN106298674B (zh) * 2015-05-25 2019-07-02 中芯国际集成电路制造(上海)有限公司 存储器及其形成方法
TWI737377B (zh) * 2020-07-01 2021-08-21 力晶積成電子製造股份有限公司 半導體結構及其製作方法

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Also Published As

Publication number Publication date
CN1143397C (zh) 2004-03-24
JP4223551B2 (ja) 2009-02-12
DE69707382T2 (de) 2002-06-27
JPH11505675A (ja) 1999-05-21
EP0827634B1 (de) 2001-10-17
WO1997036332A1 (en) 1997-10-02
CN1193414A (zh) 1998-09-16
KR100474631B1 (ko) 2005-05-16
EP0827634A1 (de) 1998-03-11
KR19990021893A (ko) 1999-03-25
US5879990A (en) 1999-03-09
TW347567B (en) 1998-12-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8321 Willingness to grant licences paragraph 23 withdrawn
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL