DE69707382D1 - Nichtflüchtige speicheranordnung mit schwebendem gate und verfahren zur herstellung - Google Patents
Nichtflüchtige speicheranordnung mit schwebendem gate und verfahren zur herstellungInfo
- Publication number
- DE69707382D1 DE69707382D1 DE69707382T DE69707382T DE69707382D1 DE 69707382 D1 DE69707382 D1 DE 69707382D1 DE 69707382 T DE69707382 T DE 69707382T DE 69707382 T DE69707382 T DE 69707382T DE 69707382 D1 DE69707382 D1 DE 69707382D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- floating gate
- volatile storage
- storage arrangement
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
- H10B41/48—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a tunnel dielectric layer also being used as part of the peripheral transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96200791 | 1996-03-22 | ||
PCT/IB1997/000227 WO1997036332A1 (en) | 1996-03-22 | 1997-03-10 | Floating gate non-volatile memory device, and a method of manufacturing the device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69707382D1 true DE69707382D1 (de) | 2001-11-22 |
DE69707382T2 DE69707382T2 (de) | 2002-06-27 |
Family
ID=8223809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69707382T Expired - Lifetime DE69707382T2 (de) | 1996-03-22 | 1997-03-10 | Nichtflüchtige speicheranordnung mit schwebendem gate und verfahren zur herstellung |
Country Status (8)
Country | Link |
---|---|
US (1) | US5879990A (de) |
EP (1) | EP0827634B1 (de) |
JP (1) | JP4223551B2 (de) |
KR (1) | KR100474631B1 (de) |
CN (1) | CN1143397C (de) |
DE (1) | DE69707382T2 (de) |
TW (1) | TW347567B (de) |
WO (1) | WO1997036332A1 (de) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3666973B2 (ja) * | 1996-03-07 | 2005-06-29 | ローム株式会社 | 半導体素子および半導体素子の製造方法 |
US5748547A (en) * | 1996-05-24 | 1998-05-05 | Shau; Jeng-Jye | High performance semiconductor memory devices having multiple dimension bit lines |
US7064376B2 (en) * | 1996-05-24 | 2006-06-20 | Jeng-Jye Shau | High performance embedded semiconductor memory devices with multiple dimension first-level bit-lines |
US20050036363A1 (en) * | 1996-05-24 | 2005-02-17 | Jeng-Jye Shau | High performance embedded semiconductor memory devices with multiple dimension first-level bit-lines |
JPH10154802A (ja) * | 1996-11-22 | 1998-06-09 | Toshiba Corp | 不揮発性半導体記憶装置の製造方法 |
TW360951B (en) * | 1997-04-01 | 1999-06-11 | Nxp Bv | Method of manufacturing a semiconductor device |
US6040216A (en) * | 1997-08-11 | 2000-03-21 | Mosel Vitelic, Inc. | Method (and device) for producing tunnel silicon oxynitride layer |
US6127224A (en) * | 1997-12-31 | 2000-10-03 | Stmicroelectronics, S.R.L. | Process for forming a non-volatile memory cell with silicided contacts |
JPH11265987A (ja) * | 1998-01-16 | 1999-09-28 | Oki Electric Ind Co Ltd | 不揮発性メモリ及びその製造方法 |
WO1999044238A1 (de) * | 1998-02-27 | 1999-09-02 | Infineon Technologies Ag | Elektrisch programmierbare speicherzellenanordnung und verfahren zu deren herstellung |
US6846739B1 (en) * | 1998-02-27 | 2005-01-25 | Micron Technology, Inc. | MOCVD process using ozone as a reactant to deposit a metal oxide barrier layer |
US6207991B1 (en) | 1998-03-20 | 2001-03-27 | Cypress Semiconductor Corp. | Integrated non-volatile and CMOS memories having substantially the same thickness gates and methods of forming the same |
US6124157A (en) * | 1998-03-20 | 2000-09-26 | Cypress Semiconductor Corp. | Integrated non-volatile and random access memory and method of forming the same |
US6034388A (en) * | 1998-05-15 | 2000-03-07 | International Business Machines Corporation | Depleted polysilicon circuit element and method for producing the same |
US6159795A (en) * | 1998-07-02 | 2000-12-12 | Advanced Micro Devices, Inc. | Low voltage junction and high voltage junction optimization for flash memory |
KR100297712B1 (ko) * | 1998-07-23 | 2001-08-07 | 윤종용 | 고집적화를위한불휘발성메모리및그제조방법 |
TW479364B (en) * | 1999-04-28 | 2002-03-11 | Koninkl Philips Electronics Nv | Method of manufacturing a semiconductor device comprising a field effect transistor |
US6204159B1 (en) * | 1999-07-09 | 2001-03-20 | Advanced Micro Devices, Inc. | Method of forming select gate to improve reliability and performance for NAND type flash memory devices |
US6380031B1 (en) * | 1999-09-08 | 2002-04-30 | Texas Instruments Incorporated | Method to form an embedded flash memory circuit with reduced process steps |
US6329240B1 (en) | 1999-10-07 | 2001-12-11 | Monolithic System Technology, Inc. | Non-volatile memory cell and methods of fabricating and operating same |
US6457108B1 (en) | 1999-10-07 | 2002-09-24 | Monolithic System Technology, Inc. | Method of operating a system-on-a-chip including entering a standby state in a non-volatile memory while operating the system-on-a-chip from a volatile memory |
US6841821B2 (en) * | 1999-10-07 | 2005-01-11 | Monolithic System Technology, Inc. | Non-volatile memory cell fabricated with slight modification to a conventional logic process and methods of operating same |
US6287913B1 (en) | 1999-10-26 | 2001-09-11 | International Business Machines Corporation | Double polysilicon process for providing single chip high performance logic and compact embedded memory structure |
WO2001047012A1 (en) * | 1999-12-21 | 2001-06-28 | Koninklijke Philips Electronics N.V. | Non-volatile memory cells and periphery |
TW461093B (en) | 2000-07-07 | 2001-10-21 | United Microelectronics Corp | Fabrication method for a high voltage electrical erasable programmable read only memory device |
JP2002050705A (ja) * | 2000-08-01 | 2002-02-15 | Fujitsu Ltd | 半導体記憶装置及びその製造方法 |
US7125763B1 (en) * | 2000-09-29 | 2006-10-24 | Spansion Llc | Silicided buried bitline process for a non-volatile memory cell |
US6518125B1 (en) * | 2000-11-17 | 2003-02-11 | Macronix International Co., Ltd. | Method for forming flash memory with high coupling ratio |
DE10101270A1 (de) | 2001-01-12 | 2002-07-25 | Infineon Technologies Ag | Verfahren zur Herstellung von eingebetteten nichtflüchtigen Halbleiterspeicherzellen |
JP2003023114A (ja) * | 2001-07-05 | 2003-01-24 | Fujitsu Ltd | 半導体集積回路装置およびその製造方法 |
JP4672217B2 (ja) * | 2001-09-04 | 2011-04-20 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置の製造方法 |
US6518614B1 (en) * | 2002-02-19 | 2003-02-11 | International Business Machines Corporation | Embedded one-time programmable non-volatile memory using prompt shift device |
US6858514B2 (en) * | 2002-03-29 | 2005-02-22 | Sharp Laboratories Of America, Inc. | Low power flash memory cell and method |
EP1518264A1 (de) * | 2002-06-20 | 2005-03-30 | Koninklijke Philips Electronics N.V. | Leitfähige abstandsschichten - erweiterte floating-gates |
US6909139B2 (en) | 2003-06-27 | 2005-06-21 | Infineon Technologies Ag | One transistor flash memory cell |
US6933199B1 (en) | 2003-10-15 | 2005-08-23 | Microchip Technology Incorporated | Method for integrating non-volatile memory with high-voltage and low-voltage logic in a salicide process |
KR100546392B1 (ko) | 2003-11-01 | 2006-01-26 | 삼성전자주식회사 | Eprom 소자를 포함하는 반도체 소자와 그 제조 방법 |
US7652321B2 (en) | 2004-03-08 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
CN100343978C (zh) * | 2004-06-23 | 2007-10-17 | 上海先进半导体制造有限公司 | 制造双层多晶硅存储器元件的方法 |
KR100624463B1 (ko) * | 2005-03-12 | 2006-09-19 | 삼성전자주식회사 | 노어 구조의 하이브리드 멀티비트 비휘발성 메모리 소자 및그 동작 방법 |
JP4753413B2 (ja) * | 2005-03-02 | 2011-08-24 | 三洋電機株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
US7382658B2 (en) * | 2006-01-26 | 2008-06-03 | Mosys, Inc. | Non-volatile memory embedded in a conventional logic process and methods for operating same |
US20070170489A1 (en) * | 2006-01-26 | 2007-07-26 | Fang Gang-Feng | Method to increase charge retention of non-volatile memory manufactured in a single-gate logic process |
JP2006203225A (ja) * | 2006-02-22 | 2006-08-03 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
US20070196971A1 (en) * | 2006-02-22 | 2007-08-23 | Bohumil Lojek | Scalable embedded EEPROM memory cell |
US8629490B2 (en) * | 2006-03-31 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode |
WO2009004919A1 (en) | 2007-06-29 | 2009-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8247861B2 (en) | 2007-07-18 | 2012-08-21 | Infineon Technologies Ag | Semiconductor device and method of making same |
CN101964328B (zh) * | 2009-07-24 | 2012-12-12 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
KR101708607B1 (ko) | 2009-11-20 | 2017-02-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
TWI490982B (zh) | 2011-08-16 | 2015-07-01 | Maxchip Electronics Corp | 半導體結構及其製造方法 |
TWI485811B (zh) * | 2012-07-18 | 2015-05-21 | Maxchip Electronics Corp | 半導體結構的製造方法 |
EP2747131B1 (de) * | 2012-12-18 | 2015-07-01 | Nxp B.V. | Verfahren zur Verarbeitung eines Siliziumwafers |
WO2016050927A1 (de) * | 2014-10-02 | 2016-04-07 | Elmos Semiconductor Aktiengesellschaft | Flash-speicherzelle und verfahren zu ihrer herstellung |
CN105789036B (zh) * | 2014-12-25 | 2018-10-23 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法和电子装置 |
CN106298674B (zh) * | 2015-05-25 | 2019-07-02 | 中芯国际集成电路制造(上海)有限公司 | 存储器及其形成方法 |
TWI737377B (zh) * | 2020-07-01 | 2021-08-21 | 力晶積成電子製造股份有限公司 | 半導體結構及其製作方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4646425A (en) * | 1984-12-10 | 1987-03-03 | Solid State Scientific, Inc. | Method for making a self-aligned CMOS EPROM wherein the EPROM floating gate and CMOS gates are made from one polysilicon layer |
US4635347A (en) * | 1985-03-29 | 1987-01-13 | Advanced Micro Devices, Inc. | Method of fabricating titanium silicide gate electrodes and interconnections |
IT1196997B (it) * | 1986-07-25 | 1988-11-25 | Sgs Microelettronica Spa | Processo per realizzare strutture includenti celle di memoria non volatili e2prom con strati di silicio autoallineate transistori associati |
US4775642A (en) * | 1987-02-02 | 1988-10-04 | Motorola, Inc. | Modified source/drain implants in a double-poly non-volatile memory process |
US5188976A (en) * | 1990-07-13 | 1993-02-23 | Hitachi, Ltd. | Manufacturing method of non-volatile semiconductor memory device |
JP3168617B2 (ja) * | 1990-07-13 | 2001-05-21 | 株式会社日立製作所 | 不揮発性半導体記憶装置の製造方法 |
JP3548984B2 (ja) * | 1991-11-14 | 2004-08-04 | 富士通株式会社 | 半導体装置の製造方法 |
DE69320582T2 (de) * | 1992-10-07 | 1999-04-01 | Koninklijke Philips Electronics N.V., Eindhoven | Verfahren zur Herstellung eines integrierten Schaltkreises mit einem nichtflüchtigen Speicherelement |
-
1997
- 1997-03-05 TW TW086102680A patent/TW347567B/zh not_active IP Right Cessation
- 1997-03-10 EP EP97903555A patent/EP0827634B1/de not_active Expired - Lifetime
- 1997-03-10 DE DE69707382T patent/DE69707382T2/de not_active Expired - Lifetime
- 1997-03-10 CN CNB971905061A patent/CN1143397C/zh not_active Expired - Fee Related
- 1997-03-10 JP JP53417497A patent/JP4223551B2/ja not_active Expired - Fee Related
- 1997-03-10 WO PCT/IB1997/000227 patent/WO1997036332A1/en active IP Right Grant
- 1997-03-10 KR KR1019970708368A patent/KR100474631B1/ko not_active IP Right Cessation
- 1997-03-11 US US08/814,868 patent/US5879990A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1143397C (zh) | 2004-03-24 |
JP4223551B2 (ja) | 2009-02-12 |
DE69707382T2 (de) | 2002-06-27 |
JPH11505675A (ja) | 1999-05-21 |
EP0827634B1 (de) | 2001-10-17 |
WO1997036332A1 (en) | 1997-10-02 |
CN1193414A (zh) | 1998-09-16 |
KR100474631B1 (ko) | 2005-05-16 |
EP0827634A1 (de) | 1998-03-11 |
KR19990021893A (ko) | 1999-03-25 |
US5879990A (en) | 1999-03-09 |
TW347567B (en) | 1998-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69707382D1 (de) | Nichtflüchtige speicheranordnung mit schwebendem gate und verfahren zur herstellung | |
DE58902995D1 (de) | Nichtfluechtige speicherzelle und verfahren zur herstellung. | |
DE68924849D1 (de) | Nichtflüchtiger halbleiterspeicher und verfahren zur herstellung. | |
DE69740011D1 (de) | Organisches elektrolumineszentes element und verfahren zur herstellung desselben | |
DE69411728D1 (de) | Spritzgegossene photochemische linse und verfahren zur deren herstellung | |
DE69635031D1 (de) | Reibahle für eine hüftgelenkpfanne und verfahren zur deren herstellung | |
DE69928785D1 (de) | Ligationsband mit abgerundeten kanten und verfahren zur dessen herstellung | |
DE69725329D1 (de) | Richtungsweisende markierung mit hervortretenden erhebungen und verfahren zur herstellung | |
DE69941205D1 (de) | Kleinmotor mit schneckenantriebe und verfahren zu dessen herstellung | |
DE69806171D1 (de) | Synthetischer düsentreibstoff und verfahren zur dessen herstellung | |
DE69610226D1 (de) | Adsorptionsmedium und verfahren zur dessen herstellung | |
SG48524A1 (en) | Method and apparatus for analog storage using floating gate nand structures | |
DE69630107D1 (de) | Mit einem EEPROM integrierter FLASH-EPROM | |
DE69819015D1 (de) | Norbonenpolymer und verfahren zur herstellung | |
DE69723988D1 (de) | Retroreflektierendes bahnenmaterial mit eingebetteten retroreflektierenden elementen in einer bindemittelschicht mit formgedächtnis und verfahren zu dessen herstellung | |
DE69624594D1 (de) | Flammhemmender verschluss und verfahren zu dessen herstellung | |
DE69701239D1 (de) | Aufzeichnungsmaterial und Verfahren zu dessen Herstellung | |
DE69636810D1 (de) | Entschäumer zur fermentation und verfahren zur fermentativen herstellung mit dessen hilfe | |
DE69736511D1 (de) | Dichtungsmaterial basierend auf blähgraphit und verfahren zu dessen herstellung | |
DE59813228D1 (de) | Kunststoffbehälter und verfahren zu seiner herstellung | |
DE69825293D1 (de) | Drahtgewebe-band mit variablen abständen und verfahren zur herstellung | |
DE69425748D1 (de) | Transistoren und verfahren zur herstellung | |
DE69624107D1 (de) | Flash-EEPROM-Zelle mit einziger Polysiliziumschicht und Verfahren zur Herstellung | |
DE69528042D1 (de) | Verstreckter polystyrolfilm und verfahren zur herstellung | |
DE69902105D1 (de) | Biozides material und verfahren zur dessen herstellung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8321 | Willingness to grant licences paragraph 23 withdrawn | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: NXP B.V., EINDHOVEN, NL |