DE69624415T2 - Verbesserungen in Verfahren zur Herstellung von Halbleitervorrichtungen - Google Patents

Verbesserungen in Verfahren zur Herstellung von Halbleitervorrichtungen

Info

Publication number
DE69624415T2
DE69624415T2 DE69624415T DE69624415T DE69624415T2 DE 69624415 T2 DE69624415 T2 DE 69624415T2 DE 69624415 T DE69624415 T DE 69624415T DE 69624415 T DE69624415 T DE 69624415T DE 69624415 T2 DE69624415 T2 DE 69624415T2
Authority
DE
Germany
Prior art keywords
methods
semiconductor devices
manufacturing semiconductor
manufacturing
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69624415T
Other languages
English (en)
Other versions
DE69624415D1 (de
Inventor
Jeffrey Alan Mckee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69624415D1 publication Critical patent/DE69624415D1/de
Publication of DE69624415T2 publication Critical patent/DE69624415T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE69624415T 1995-07-14 1996-07-15 Verbesserungen in Verfahren zur Herstellung von Halbleitervorrichtungen Expired - Lifetime DE69624415T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US119795P 1995-07-14 1995-07-14

Publications (2)

Publication Number Publication Date
DE69624415D1 DE69624415D1 (de) 2002-11-28
DE69624415T2 true DE69624415T2 (de) 2003-07-03

Family

ID=21694857

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69624415T Expired - Lifetime DE69624415T2 (de) 1995-07-14 1996-07-15 Verbesserungen in Verfahren zur Herstellung von Halbleitervorrichtungen

Country Status (5)

Country Link
EP (1) EP0753885B1 (de)
JP (1) JPH09237777A (de)
KR (1) KR100434133B1 (de)
DE (1) DE69624415T2 (de)
TW (1) TW449792B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0740330A3 (de) * 1995-04-28 1998-05-13 Texas Instruments Incorporated Verfahren zur Verminderung der Auswirkungen von stehenden Wellen in einem Photolithographieverfahren
US5965461A (en) * 1997-08-01 1999-10-12 Advanced Micro Devices, Inc. Controlled linewidth reduction during gate pattern formation using a spin-on barc
US6121155A (en) * 1998-12-04 2000-09-19 Advanced Micro Devices Integrated circuit fabrication critical dimension control using self-limiting resist etch
US6362111B1 (en) * 1998-12-09 2002-03-26 Texas Instruments Incorporated Tunable gate linewidth reduction process
US6458602B1 (en) 1999-01-26 2002-10-01 Hitachi, Ltd. Method for fabricating semiconductor integrated circuit device
KR100334577B1 (ko) * 1999-08-06 2002-05-03 윤종용 사진공정의 해상도를 능가하는 트렌치를 절연막내에 형성하는방법
JP2002009056A (ja) * 2000-06-22 2002-01-11 Mitsubishi Electric Corp 微細パターン形成方法およびその方法により製造した装置
JP4654544B2 (ja) 2000-07-12 2011-03-23 日産化学工業株式会社 リソグラフィー用ギャップフィル材形成組成物
JP4530552B2 (ja) 2001-01-29 2010-08-25 富士通セミコンダクター株式会社 半導体装置及びその製造方法
TW567575B (en) 2001-03-29 2003-12-21 Toshiba Corp Fabrication method of semiconductor device and semiconductor device
US8158527B2 (en) 2001-04-20 2012-04-17 Kabushiki Kaisha Toshiba Semiconductor device fabrication method using multiple resist patterns
JP4806516B2 (ja) 2003-08-29 2011-11-02 Ｏｋｉセミコンダクタ株式会社 半導体装置のプラズマエッチング方法
JP4865361B2 (ja) 2006-03-01 2012-02-01 株式会社日立ハイテクノロジーズ ドライエッチング方法
JP2009065000A (ja) * 2007-09-07 2009-03-26 Tokyo Electron Ltd 基板の処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
US7846645B2 (en) 2007-12-14 2010-12-07 Tokyo Electron Limited Method and system for reducing line edge roughness during pattern etching
JP6208017B2 (ja) 2014-01-07 2017-10-04 株式会社日立ハイテクノロジーズ プラズマエッチング方法
US9506154B2 (en) 2014-11-19 2016-11-29 Hitachi High-Technologies Corporation Plasma processing method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2152223B (en) * 1983-11-28 1987-01-14 Fusion Semiconductor Systems Process for imaging resist materials
US4557797A (en) * 1984-06-01 1985-12-10 Texas Instruments Incorporated Resist process using anti-reflective coating
US4820611A (en) * 1987-04-24 1989-04-11 Advanced Micro Devices, Inc. Titanium nitride as an antireflection coating on highly reflective layers for photolithography
US5106786A (en) * 1989-10-23 1992-04-21 At&T Bell Laboratories Thin coatings for use in semiconductor integrated circuits and processes as antireflection coatings consisting of tungsten silicide
US5126289A (en) * 1990-07-20 1992-06-30 At&T Bell Laboratories Semiconductor lithography methods using an arc of organic material
US5034348A (en) * 1990-08-16 1991-07-23 International Business Machines Corp. Process for forming refractory metal silicide layers of different thicknesses in an integrated circuit
US5525542A (en) * 1995-02-24 1996-06-11 Motorola, Inc. Method for making a semiconductor device having anti-reflective coating

Also Published As

Publication number Publication date
EP0753885B1 (de) 2002-10-23
EP0753885A1 (de) 1997-01-15
KR970008323A (ko) 1997-02-24
KR100434133B1 (ko) 2004-08-09
DE69624415D1 (de) 2002-11-28
TW449792B (en) 2001-08-11
JPH09237777A (ja) 1997-09-09

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Legal Events

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