DE69617288D1 - Verfahren zur Herstellung einer piezoelektrischen Dünnschicht - Google Patents

Verfahren zur Herstellung einer piezoelektrischen Dünnschicht

Info

Publication number
DE69617288D1
DE69617288D1 DE69617288T DE69617288T DE69617288D1 DE 69617288 D1 DE69617288 D1 DE 69617288D1 DE 69617288 T DE69617288 T DE 69617288T DE 69617288 T DE69617288 T DE 69617288T DE 69617288 D1 DE69617288 D1 DE 69617288D1
Authority
DE
Germany
Prior art keywords
producing
thin film
piezoelectric thin
piezoelectric
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69617288T
Other languages
English (en)
Other versions
DE69617288T2 (de
Inventor
Satoru Miyashita
Masakazu Shinozuka
Tetsushi Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE69617288D1 publication Critical patent/DE69617288D1/de
Publication of DE69617288T2 publication Critical patent/DE69617288T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S310/00—Electrical generator or motor structure
    • Y10S310/80—Piezoelectric polymers, e.g. PVDF
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Compositions Of Oxide Ceramics (AREA)
DE69617288T 1995-02-20 1996-02-20 Verfahren zur Herstellung einer piezoelektrischen Dünnschicht Expired - Lifetime DE69617288T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3103595 1995-02-20
JP32266295 1995-12-12

Publications (2)

Publication Number Publication Date
DE69617288D1 true DE69617288D1 (de) 2002-01-10
DE69617288T2 DE69617288T2 (de) 2002-05-23

Family

ID=26369488

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69617288T Expired - Lifetime DE69617288T2 (de) 1995-02-20 1996-02-20 Verfahren zur Herstellung einer piezoelektrischen Dünnschicht

Country Status (4)

Country Link
US (1) US6543107B1 (de)
EP (1) EP0727832B1 (de)
JP (1) JP3405498B2 (de)
DE (1) DE69617288T2 (de)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3209082B2 (ja) * 1996-03-06 2001-09-17 セイコーエプソン株式会社 圧電体薄膜素子及びその製造方法、並びにこれを用いたインクジェット式記録ヘッド
EP1179861A3 (de) 1997-03-27 2003-03-19 Seiko Epson Corporation Piezoelektrisches Bauelement und dessen Herstellungsverfahren
US6328433B1 (en) * 1998-01-22 2001-12-11 Seiko Epson Corporation Piezoelectric film element and ink-jet recording head using the same
US6478412B1 (en) * 1999-01-22 2002-11-12 Kansai Research Institute Piezoelectric thin film device, its production method, and ink-jet recording head
JP2001203401A (ja) * 2000-01-18 2001-07-27 Seiko Epson Corp 圧電体素子及びその製造方法、インクジェット式記録ヘッド並びにインクジェットプリンタ
US7527982B1 (en) * 2000-07-14 2009-05-05 Kabushiki Kaisha Toshiba Manufacturing method of a semiconductor device including a crystalline insulation film made of perovskite type oxide
JP4925516B2 (ja) * 2001-03-30 2012-04-25 京セラ株式会社 積層型圧電アクチュエータ及び噴射装置
US6730575B2 (en) 2001-08-30 2004-05-04 Micron Technology, Inc. Methods of forming perovskite-type material and capacitor dielectric having perovskite-type crystalline structure
JP4286492B2 (ja) * 2002-06-13 2009-07-01 富士通株式会社 強誘電体キャパシタの製造方法
JP3974096B2 (ja) * 2002-09-20 2007-09-12 キヤノン株式会社 圧電体素子及びインクジェット記録ヘッド
JP3999156B2 (ja) * 2003-03-31 2007-10-31 日本碍子株式会社 圧電／電歪膜型素子及び圧電／電歪磁器組成物
US7633210B2 (en) * 2003-07-28 2009-12-15 Kyocera Corporation Multi-layer electronic component and method for manufacturing the same, multi-layer piezoelectric element
JP5013035B2 (ja) 2003-12-11 2012-08-29 セイコーエプソン株式会社 誘電体膜の製造方法及び液体噴射ヘッドの製造方法
US7094709B2 (en) * 2004-06-15 2006-08-22 Braggone Oy Method of synthesizing hybrid metal oxide materials and applications thereof
US7739777B2 (en) * 2004-08-31 2010-06-22 Brother Kogyo Kabushiki Kaisha Method of manufacturing a liquid transporting apparatus
JP4868200B2 (ja) * 2004-09-22 2012-02-01 ブラザー工業株式会社 圧電アクチュエータおよびインクジェットヘッドの製造方法
WO2006069677A2 (en) * 2004-12-30 2006-07-06 Cinvention Ag Combination comprising an agent providing a signal, an implant material and a drug
CN101098916A (zh) * 2005-01-13 2008-01-02 金文申有限公司 含有碳纳米颗粒的复合材料
CA2591944A1 (en) * 2005-01-24 2006-07-27 Cinvention Ag Metal containing composite materials
EA012083B1 (ru) * 2005-02-03 2009-08-28 Синвеншен Аг Материал для доставки лекарств, способ его получения и имплантат, содержащий этот материал
CN101142149A (zh) * 2005-03-18 2008-03-12 金文申有限公司 制备多孔烧结金属材料的方法
JP5019020B2 (ja) 2005-03-31 2012-09-05 セイコーエプソン株式会社 誘電体膜の製造方法及び圧電体素子の製造方法並びに液体噴射ヘッドの製造方法
CA2612195A1 (en) * 2005-07-01 2007-01-11 Cinvention Ag Medical devices comprising a reticulated composite material
CN101238166A (zh) * 2005-07-01 2008-08-06 金文申有限公司 制备多孔网状复合材料的方法
US7673976B2 (en) 2005-09-16 2010-03-09 Eastman Kodak Company Continuous ink jet apparatus and method using a plurality of break-off times
US7273270B2 (en) 2005-09-16 2007-09-25 Eastman Kodak Company Ink jet printing device with improved drop selection control
US7364276B2 (en) * 2005-09-16 2008-04-29 Eastman Kodak Company Continuous ink jet apparatus with integrated drop action devices and control circuitry
JP5088916B2 (ja) * 2005-10-28 2012-12-05 富士フイルム株式会社 無機膜基板の製造方法
JP4998675B2 (ja) * 2006-03-27 2012-08-15 セイコーエプソン株式会社 圧電素子の製造方法及び液体噴射ヘッド
US7777395B2 (en) * 2006-10-12 2010-08-17 Eastman Kodak Company Continuous drop emitter with reduced stimulation crosstalk
JP4737027B2 (ja) * 2006-10-13 2011-07-27 セイコーエプソン株式会社 圧電体素子の製造方法、及びインクジェット式記録ヘッドの製造方法
US7879395B2 (en) * 2006-10-17 2011-02-01 Qimonda Ag Method of preparing a coating solution and a corresponding use of the coating solution for coating a substrate
JP2008205048A (ja) * 2007-02-16 2008-09-04 Seiko Epson Corp 圧電素子の製造方法及び液体噴射ヘッドの製造方法
US7758171B2 (en) * 2007-03-19 2010-07-20 Eastman Kodak Company Aerodynamic error reduction for liquid drop emitters
DE102007029600A1 (de) * 2007-06-27 2009-01-02 Siemens Ag Bleizirkonattitanat mit Scandium-Wolfram-Dotierung, Verfahren zum Herstellen eines piezokeramischen Bauteils unter Verwendung des Bleizirkonattitanats und Verwendung des piezokeramischen Bauteils
DE102007029613A1 (de) * 2007-06-27 2009-01-02 Siemens Ag Bleizirkonattitanat mit Nickel-Wolfram-Dotierung, Verfahren zum Herstellen eines piezokeramischen Bauteils unter Verwendung des Bleizirkonattitanats und Verwendung des piezokeramischen Bauteils
JP2009054618A (ja) * 2007-08-23 2009-03-12 Seiko Epson Corp 圧電素子の製造方法、誘電体層の製造方法、およびアクチュエータの製造方法
JP2008153674A (ja) * 2007-12-25 2008-07-03 Seiko Epson Corp インクジェット式記録ヘッド及び圧電体素子
KR101669953B1 (ko) * 2010-03-26 2016-11-09 삼성전자 주식회사 산화물 박막, 산화물 박막의 형성 방법 및 산화물 박막을 포함하는 전자 소자
JP5974485B2 (ja) * 2011-09-16 2016-08-23 株式会社リコー 電気機械変換素子の製造方法
US9162454B2 (en) 2013-04-11 2015-10-20 Eastman Kodak Company Printhead including acoustic dampening structure
US9168740B2 (en) 2013-04-11 2015-10-27 Eastman Kodak Company Printhead including acoustic dampening structure
US10411183B2 (en) 2014-03-27 2019-09-10 Mitsubishi Materials Corporation Composition for forming Mn-doped PZT-based piezoelectric film and Mn-doped PZT-based piezoelectric film
KR102330630B1 (ko) * 2014-03-28 2021-11-23 미쓰비시 마테리알 가부시키가이샤 Mn 및 Nb 도프의 PZT 계 압전체막 형성용 조성물
US20150279671A1 (en) * 2014-03-28 2015-10-01 Industry-Academic Cooperation Foundation, Yonsei University Method for forming oxide thin film and method for fabricating oxide thin film transistor employing germanium doping
US9199462B1 (en) 2014-09-19 2015-12-01 Eastman Kodak Company Printhead with print artifact supressing cavity
US20160138182A1 (en) * 2014-11-18 2016-05-19 Wisconsin Alumni Research Foundation Methods for forming mixed metal oxide epitaxial films
JP6891734B2 (ja) * 2017-08-29 2021-06-18 セイコーエプソン株式会社 圧電素子および液体吐出ヘッド
RU2673444C1 (ru) * 2017-12-19 2018-11-26 Акционерное общество "Научно-исследовательский институт "Элпа" с опытным производством" Способ получения пористой пьезокерамики с анизотропией диэлектрической проницаемости и ряда других параметров
WO2020097594A1 (en) * 2018-11-09 2020-05-14 Mems Drive, Inc. Piezo actuator fabrication method
CN110752286B (zh) * 2019-10-25 2023-04-07 业成科技（成都）有限公司 压电薄膜及其制备方法和压电薄膜传感器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4820586A (en) * 1980-07-23 1989-04-11 Minnesota Mining And Manufacturing Company Pyroelectric and isotropic piezoelectric polymer blends
US4946710A (en) * 1987-06-02 1990-08-07 National Semiconductor Corporation Method for preparing PLZT, PZT and PLT sol-gels and fabricating ferroelectric thin films
JPH04506791A (ja) * 1989-04-21 1992-11-26 アルキャン　インターナショナル　リミテッド ゾル・ゲル処理による薄膜セラミックの製造
WO1990013149A1 (en) * 1989-04-27 1990-11-01 Queen's University At Kingston SOL GEL PROCESS FOR PREPARING Pb(Zr,Ti)O3 THIN FILMS
US5265315A (en) * 1990-11-20 1993-11-30 Spectra, Inc. Method of making a thin-film transducer ink jet head
US5500988A (en) * 1990-11-20 1996-03-26 Spectra, Inc. Method of making a perovskite thin-film ink jet transducer
JPH04259380A (ja) * 1991-02-13 1992-09-14 Mitsubishi Materials Corp Ｐｚｔ強誘電体薄膜の結晶配向性制御方法
US5271956A (en) * 1991-12-30 1993-12-21 Eastman Kodak Company Method of forming ternary metal fluoride films by the decomposition of metallo-organic compounds in the presence of a fluorinating agent
US5271955A (en) * 1992-04-06 1993-12-21 Motorola, Inc. Method for making a semiconductor device having an anhydrous ferroelectric thin film
US5825121A (en) * 1994-07-08 1998-10-20 Seiko Epson Corporation Thin film piezoelectric device and ink jet recording head comprising the same
US5683614A (en) * 1996-08-16 1997-11-04 Sandia Corporation Sol-gel type synthesis of Bi2 (Sr,Ta2)O9 using an acetate based system
US5873154A (en) * 1996-10-17 1999-02-23 Nokia Mobile Phones Limited Method for fabricating a resonator having an acoustic mirror

Also Published As

Publication number Publication date
DE69617288T2 (de) 2002-05-23
JP3405498B2 (ja) 2003-05-12
EP0727832A1 (de) 1996-08-21
US6543107B1 (en) 2003-04-08
EP0727832B1 (de) 2001-11-28
JPH09223830A (ja) 1997-08-26

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