DE69615884T2 - Verfahren und Vorrichtung zur Herstellung von Chalcopyrit-Halbleiter-Dünnschichten - Google Patents

Verfahren und Vorrichtung zur Herstellung von Chalcopyrit-Halbleiter-Dünnschichten

Info

Publication number
DE69615884T2
DE69615884T2 DE69615884T DE69615884T DE69615884T2 DE 69615884 T2 DE69615884 T2 DE 69615884T2 DE 69615884 T DE69615884 T DE 69615884T DE 69615884 T DE69615884 T DE 69615884T DE 69615884 T2 DE69615884 T2 DE 69615884T2
Authority
DE
Germany
Prior art keywords
thin films
semiconductor thin
chalcopyrite semiconductor
producing chalcopyrite
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69615884T
Other languages
English (en)
Other versions
DE69615884D1 (de
Inventor
Naoki Kohara
Takayuki Negami
Mikihiko Nishitani
Takahiro Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69615884D1 publication Critical patent/DE69615884D1/de
Application granted granted Critical
Publication of DE69615884T2 publication Critical patent/DE69615884T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
DE69615884T 1995-03-15 1996-03-13 Verfahren und Vorrichtung zur Herstellung von Chalcopyrit-Halbleiter-Dünnschichten Expired - Lifetime DE69615884T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5578595 1995-03-15
JP6827295 1995-03-27

Publications (2)

Publication Number Publication Date
DE69615884D1 DE69615884D1 (de) 2001-11-22
DE69615884T2 true DE69615884T2 (de) 2002-04-04

Family

ID=26396696

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69615884T Expired - Lifetime DE69615884T2 (de) 1995-03-15 1996-03-13 Verfahren und Vorrichtung zur Herstellung von Chalcopyrit-Halbleiter-Dünnschichten

Country Status (3)

Country Link
US (2) US5918111A (de)
EP (1) EP0732752B1 (de)
DE (1) DE69615884T2 (de)

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US6177127B1 (en) * 1995-12-15 2001-01-23 Micron Technology, Inc. Method of monitoring emissivity
US6374150B2 (en) * 1998-07-30 2002-04-16 Applied Materials, Inc. Method and apparatus for monitoring and/or end point detecting a process
EP1428243A4 (de) * 2001-04-16 2008-05-07 Bulent M Basol Verfahren zur ausbildung eines halbleiterzusammensetzungsfilms zur herstellung elektronischer bauelemente und dadurch hergestellter film
WO2006119621A1 (en) * 2005-05-06 2006-11-16 Transfert Plus, S.E.C. Processes for preparing chalcopyrite-type compounds and other inorganic compounds
US8261690B2 (en) * 2006-07-14 2012-09-11 Georgia Tech Research Corporation In-situ flux measurement devices, methods, and systems
WO2008039280A2 (en) * 2006-08-16 2008-04-03 Solyndra, Inc. Real time process monitoring and control for semicontor layers
US7964418B2 (en) * 2006-08-18 2011-06-21 Solyndra Llc Real time process monitoring and control for semiconductor junctions
WO2009046178A1 (en) * 2007-10-02 2009-04-09 University Of Delaware I-iii-vi2 photovoltaic absorber layers
JP2009259872A (ja) * 2008-04-11 2009-11-05 Rohm Co Ltd 光電変換装置およびその製造方法、および固体撮像装置
JP5520597B2 (ja) * 2009-05-19 2014-06-11 ローム株式会社 フォトダイオードの製造方法
CN102024870B (zh) * 2010-04-19 2013-07-24 福建欧德生光电科技有限公司 半导体薄膜太阳能电池的制造***和方法
US9589817B2 (en) 2011-04-15 2017-03-07 Illinois Tool Works Inc. Dryer
CN102260905B (zh) * 2011-07-19 2013-03-13 同济大学 一种制备Ge纳米管的方法
CN102877029B (zh) * 2012-09-11 2014-03-05 中国科学技术大学 一种太阳能电池片用纳米薄膜蒸发套件
US20140109967A1 (en) * 2012-10-24 2014-04-24 Korea Institute Of Science And Technology Thin film solar cells for windows based on low cost solution process and fabrication method thereof
JP2015061062A (ja) * 2013-09-20 2015-03-30 株式会社東芝 光電変換素子の製造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4307681A (en) * 1978-03-15 1981-12-29 Photon Power, Inc. Apparatus for quality film formation
US4335266A (en) * 1980-12-31 1982-06-15 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
JPS592318A (ja) * 1982-06-28 1984-01-07 Toshiba Mach Co Ltd 半導体気相成長装置
US4791261A (en) * 1987-09-23 1988-12-13 International Business Machines Corporation Crucible for evaporation of metallic film
US4915745A (en) * 1988-09-22 1990-04-10 Atlantic Richfield Company Thin film solar cell and method of making
US5034604A (en) * 1989-08-29 1991-07-23 Board Of Regents, The University Of Texas System Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction
US5209182A (en) * 1989-12-01 1993-05-11 Kawasaki Steel Corporation Chemical vapor deposition apparatus for forming thin film
US5711816A (en) * 1990-07-06 1998-01-27 Advanced Technolgy Materials, Inc. Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same
DE69231288T2 (de) * 1991-09-27 2000-11-30 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung einer Verbindungshalbleiter-Dünnschicht
JPH05262504A (ja) * 1991-09-27 1993-10-12 Matsushita Electric Ind Co Ltd 化合物半導体、その薄膜製造方法及びそれを用いた半導体装置
US5286306A (en) * 1992-02-07 1994-02-15 Shalini Menezes Thin film photovoltaic cells from I-III-VI-VII compounds
DE69304143T2 (de) * 1992-05-19 1997-01-30 Matsushita Electric Ind Co Ltd Methode zur Herstellung einer Zusammensetzung des Typs Chalkopyrit
JP3386127B2 (ja) * 1992-09-22 2003-03-17 シーメンス アクチエンゲゼルシヤフト 基板上に黄銅鉱半導体を迅速に作成する方法
JP3064701B2 (ja) * 1992-10-30 2000-07-12 松下電器産業株式会社 カルコパイライト型化合物薄膜の製造方法
US5356839A (en) * 1993-04-12 1994-10-18 Midwest Research Institute Enhanced quality thin film Cu(In,Ga)Se2 for semiconductor device applications by vapor-phase recrystallization
US5441897A (en) * 1993-04-12 1995-08-15 Midwest Research Institute Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells
JP3184000B2 (ja) * 1993-05-10 2001-07-09 株式会社東芝 薄膜の形成方法およびその装置
US5500056A (en) * 1993-07-19 1996-03-19 Matsushita Electric Industrial Co., Ltd. Solar cell containing low melting point glass layer
DK93193D0 (da) * 1993-08-13 1993-08-13 Haldor Topsoe As Alkylering
JP3414814B2 (ja) * 1994-01-24 2003-06-09 松下電器産業株式会社 太陽電池とその製造方法
US5549756A (en) * 1994-02-02 1996-08-27 Applied Materials, Inc. Optical pyrometer for a thin film deposition system
US5633033A (en) * 1994-04-18 1997-05-27 Matsushita Electric Industrial Co., Ltd. Method for manufacturing chalcopyrite film
US5730852A (en) * 1995-09-25 1998-03-24 Davis, Joseph & Negley Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells
US5674555A (en) * 1995-11-30 1997-10-07 University Of Delaware Process for preparing group Ib-IIIa-VIa semiconducting films
US5802856A (en) * 1996-07-31 1998-09-08 Stanford University Multizone bake/chill thermal cycling module

Also Published As

Publication number Publication date
DE69615884D1 (de) 2001-11-22
EP0732752A3 (de) 1996-11-13
US5918111A (en) 1999-06-29
EP0732752A2 (de) 1996-09-18
EP0732752B1 (de) 2001-10-17
US6162296A (en) 2000-12-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP