DE3852979T2 - Verfahren und Vorrichtung zur Herstellung supraleitender Dünnschichten. - Google Patents

Verfahren und Vorrichtung zur Herstellung supraleitender Dünnschichten.

Info

Publication number
DE3852979T2
DE3852979T2 DE3852979T DE3852979T DE3852979T2 DE 3852979 T2 DE3852979 T2 DE 3852979T2 DE 3852979 T DE3852979 T DE 3852979T DE 3852979 T DE3852979 T DE 3852979T DE 3852979 T2 DE3852979 T2 DE 3852979T2
Authority
DE
Germany
Prior art keywords
thin films
superconducting thin
producing superconducting
producing
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3852979T
Other languages
English (en)
Other versions
DE3852979D1 (de
Inventor
Yukio Okamoto
Toshiyuki Aida
Katsuki Miyauchi
Kazumasa Takagi
Tokuumi Fukazawa
Shinji Takayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62251497A external-priority patent/JP2539458B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3852979D1 publication Critical patent/DE3852979D1/de
Publication of DE3852979T2 publication Critical patent/DE3852979T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
    • C23C14/0031—Bombardment of substrates by reactive ion beams
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0492—Processes for depositing or forming copper oxide superconductor layers by thermal spraying, e.g. plasma deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0548—Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/732—Evaporative coating with superconducting material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/786—Manufacturing system or apparatus for making high temperature, i.e. tc greater than 30 k superconductor product, device, article or stock, i.e. which system or apparatus does not itself contain a superconducting component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
DE3852979T 1987-08-07 1988-08-04 Verfahren und Vorrichtung zur Herstellung supraleitender Dünnschichten. Expired - Fee Related DE3852979T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19618687 1987-08-07
JP62251497A JP2539458B2 (ja) 1987-10-07 1987-10-07 超電導薄膜の製造方法及び装置

Publications (2)

Publication Number Publication Date
DE3852979D1 DE3852979D1 (de) 1995-03-23
DE3852979T2 true DE3852979T2 (de) 1995-05-24

Family

ID=26509600

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3852979T Expired - Fee Related DE3852979T2 (de) 1987-08-07 1988-08-04 Verfahren und Vorrichtung zur Herstellung supraleitender Dünnschichten.

Country Status (4)

Country Link
US (2) US4950642A (de)
EP (1) EP0302506B1 (de)
KR (1) KR910007382B1 (de)
DE (1) DE3852979T2 (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH075435B2 (ja) * 1987-03-31 1995-01-25 住友電気工業株式会社 超電導薄膜の製造方法及び装置
EP0288711B1 (de) * 1987-04-28 1995-02-22 International Business Machines Corporation Schnelle grossflächige Beschichtung aus Supraleitern mit hoher Sprungtemperatur
JP2557486B2 (ja) * 1987-08-20 1996-11-27 住友電気工業株式会社 超電導セラミックス長尺体の製造方法および超電導セラミックス長尺体
EP0431160B1 (de) * 1988-03-16 1995-05-17 Kabushiki Kaisha Toshiba VERFAHREN ZUR HERSTELLUNG EINES DüNNSCHICHTOXYDSUPRALEITERS
JPH04500198A (ja) * 1988-08-19 1992-01-16 リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミネソタ オゾンを用いた超電導セラミック酸化物の調製
DE68909395T2 (de) * 1989-02-10 1994-02-17 Toshiba Kawasaki Kk Verfahren zur Ablagerung eines dünnen Oxydfilms.
DE3923008A1 (de) * 1989-07-12 1991-01-17 Hoechst Ag Verfahren zur herstellung oxidkeramischer formkoerper durch thermisches spritzen
DE3927168A1 (de) * 1989-08-17 1991-02-21 Hoechst Ag Verfahren zum thermischen spritzen von oxidkeramischen supraleitenden materialien
US4987102A (en) * 1989-12-04 1991-01-22 Motorola, Inc. Process for forming high purity thin films
WO1991014028A1 (en) * 1990-03-16 1991-09-19 Conductus, Inc. High temperature superconducting films on aluminum oxide substrates
EP0456600A1 (de) * 1990-05-11 1991-11-13 Plasma-Invent Ag Verfahren zum Herstellen von dünnen Schichten aus supraleitender Mischkeramik
JPH04219301A (ja) * 1990-07-25 1992-08-10 Semiconductor Energy Lab Co Ltd 酸化物超伝導薄膜の作製方法
EP0553295A1 (de) * 1990-10-16 1993-08-04 Superconductor Technologies Inc. In situ wachstum supraleitender filme
US5707692A (en) * 1990-10-23 1998-01-13 Canon Kabushiki Kaisha Apparatus and method for processing a base substance using plasma and a magnetic field
US5779802A (en) * 1990-12-10 1998-07-14 Imec V.Z.W. Thin film deposition chamber with ECR-plasma source
DE4108001C1 (de) * 1991-03-13 1992-07-09 Forschungszentrum Juelich Gmbh, 5170 Juelich, De
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
US7235819B2 (en) * 1991-03-18 2007-06-26 The Trustees Of Boston University Semiconductor device having group III nitride buffer layer and growth layers
JPH0788578B2 (ja) * 1991-07-10 1995-09-27 財団法人国際超電導産業技術研究センター 酸化物薄膜の製造方法および装置
JPH0570931A (ja) * 1991-09-11 1993-03-23 Canon Inc 真空蒸着装置および防着板
JPH069297A (ja) * 1991-12-09 1994-01-18 Sumitomo Electric Ind Ltd 成膜装置
WO1993013240A1 (en) * 1991-12-23 1993-07-08 Prince John H System for depositing superconducting films
ATE171732T1 (de) * 1992-07-02 1998-10-15 Balzers Hochvakuum Verfahren zur herstellung einer metalloxidschicht, vakuumbehandlungsanlage hierfür sowie mit mindestens einer metalloxidschicht beschichteter teil
JP3008970B2 (ja) * 1993-07-27 2000-02-14 財団法人国際超電導産業技術研究センター Ｙ１２３型結晶構造を有する酸化物結晶膜
FR2695944B1 (fr) * 1992-09-24 1994-11-18 Onera (Off Nat Aerospatiale) Appareil de dépôt chimique en phase vapeur activé par un plasma micro-ondes.
AU8070294A (en) * 1993-07-15 1995-02-13 President And Fellows Of Harvard College Extended nitride material comprising beta -c3n4
JPH07133192A (ja) * 1993-11-04 1995-05-23 Sumitomo Electric Ind Ltd 成膜装置および成膜方法
US5399388A (en) * 1994-02-28 1995-03-21 The United States Of America As Represented By The Secretary Of The Navy Method of forming thin films on substrates at low temperatures
US6270861B1 (en) * 1994-07-21 2001-08-07 Ut, Battelle Llc Individually controlled environments for pulsed addition and crystallization
US5458686A (en) * 1995-03-03 1995-10-17 Neocera, Inc. Pulsed laser passive filter deposition system
US5637146A (en) * 1995-03-30 1997-06-10 Saturn Cosmos Co., Ltd. Method for the growth of nitride based semiconductors and its apparatus
DE19540543A1 (de) * 1995-10-31 1997-05-07 Leybold Ag Vorrichtung zum Beschichten eines Substrats mit Hilfe des Chemical-Vapor-Deposition-Verfahrens
IL117657A0 (en) * 1996-03-26 1996-07-23 Technion Res & Dev Foundation Ceramic target for thin film deposition
EP0816292B1 (de) * 1996-06-27 2000-01-05 The Honjo Chemical Corporation Verfahren zur Herstellung von Lithium-Mangan-Oxid mit Spinelstruktur
US5849371A (en) * 1996-07-22 1998-12-15 Beesley; Dwayne Laser and laser-assisted free electron beam deposition apparatus and method
JP2003158308A (ja) * 2001-11-22 2003-05-30 Communication Research Laboratory 超伝導材料の製造方法
FR2840925B1 (fr) * 2002-06-18 2005-04-01 Riber Chambre d'evaporation de materiaux sous vide a pompage differentiel
JP4474506B2 (ja) * 2004-04-12 2010-06-09 財団法人北九州産業学術推進機構 マイクロ波を用いた減圧乾燥方法及びその装置
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
US10060048B2 (en) * 2012-10-25 2018-08-28 Wetling Ip Ccg Ltd Method for preparing high quality crystals by directing ionized gas molecules through and/or over a saturated solution comprising a protein
KR102270772B1 (ko) 2020-06-23 2021-06-28 김의택 근력강화 운동기구
KR102455185B1 (ko) 2021-06-21 2022-10-17 김의택 근력강화 운동기구

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US4268711A (en) * 1979-04-26 1981-05-19 Optical Coating Laboratory, Inc. Method and apparatus for forming films from vapors using a contained plasma source
US4336277A (en) * 1980-09-29 1982-06-22 The Regents Of The University Of California Transparent electrical conducting films by activated reactive evaporation
GB2085482B (en) * 1980-10-06 1985-03-06 Optical Coating Laboratory Inc Forming thin film oxide layers using reactive evaporation techniques
US4483725A (en) * 1982-09-30 1984-11-20 At&T Bell Laboratories Reactive vapor deposition of multiconstituent material
US4514437A (en) * 1984-05-02 1985-04-30 Energy Conversion Devices, Inc. Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
US4888202A (en) * 1986-07-31 1989-12-19 Nippon Telegraph And Telephone Corporation Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
US4793908A (en) * 1986-12-29 1988-12-27 Rockwell International Corporation Multiple ion source method and apparatus for fabricating multilayer optical films
JP2711253B2 (ja) * 1987-03-18 1998-02-10 インターナショナル・ビジネス・マシーンズ・コーポレーション 超伝導膜及びその形成方法
EP0292382B1 (de) * 1987-05-18 1994-09-14 Sumitomo Electric Industries Limited Verfahren zur Herstellung eines supraleitenden Materials des Oxydverbundtyps
EP0292958B1 (de) * 1987-05-26 1993-12-29 Sumitomo Electric Industries Limited Verfahren zur Herstellung einer dünnen Schicht aus supraleitendem Mischoxid
EP0365533A1 (de) * 1987-06-12 1990-05-02 Siemens Aktiengesellschaft Verfahren zur herstellung von leiterbereichen aus einem oxidkeramischen supraleitermaterial hoher sprungtemperatur
FR2617645B1 (fr) * 1987-07-03 1989-10-20 Thomson Csf Dispositif en materiau supraconducteur et procede de realisation

Also Published As

Publication number Publication date
US5316585A (en) 1994-05-31
EP0302506A2 (de) 1989-02-08
US4950642A (en) 1990-08-21
KR910007382B1 (ko) 1991-09-25
EP0302506B1 (de) 1995-02-08
DE3852979D1 (de) 1995-03-23
EP0302506A3 (en) 1990-05-16
KR890004447A (ko) 1989-04-22

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