DE69601256T2 - Aluminiumnitrrid-sinterkörper und verfahren zu dessen herstellung - Google Patents

Aluminiumnitrrid-sinterkörper und verfahren zu dessen herstellung

Info

Publication number
DE69601256T2
DE69601256T2 DE69601256T DE69601256T DE69601256T2 DE 69601256 T2 DE69601256 T2 DE 69601256T2 DE 69601256 T DE69601256 T DE 69601256T DE 69601256 T DE69601256 T DE 69601256T DE 69601256 T2 DE69601256 T2 DE 69601256T2
Authority
DE
Germany
Prior art keywords
nitrride
aluminum
production
sinter body
sinter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69601256T
Other languages
English (en)
Other versions
DE69601256D1 (de
Inventor
Michiyasu Komatsu
Takao Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69601256D1 publication Critical patent/DE69601256D1/de
Publication of DE69601256T2 publication Critical patent/DE69601256T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Products (AREA)
DE69601256T 1995-07-11 1996-06-28 Aluminiumnitrrid-sinterkörper und verfahren zu dessen herstellung Expired - Lifetime DE69601256T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP07175029A JP3100871B2 (ja) 1995-07-11 1995-07-11 窒化アルミニウム焼結体
PCT/JP1996/001808 WO1997003031A1 (en) 1995-07-11 1996-06-28 Aluminum nitride sinter and process for the production thereof

Publications (2)

Publication Number Publication Date
DE69601256D1 DE69601256D1 (de) 1999-02-11
DE69601256T2 true DE69601256T2 (de) 1999-05-20

Family

ID=15988980

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69601256T Expired - Lifetime DE69601256T2 (de) 1995-07-11 1996-06-28 Aluminiumnitrrid-sinterkörper und verfahren zu dessen herstellung

Country Status (8)

Country Link
US (1) US5767028A (de)
EP (1) EP0780351B1 (de)
JP (1) JP3100871B2 (de)
KR (1) KR0168303B1 (de)
CN (1) CN1079785C (de)
DE (1) DE69601256T2 (de)
TW (1) TW397807B (de)
WO (1) WO1997003031A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4812144B2 (ja) * 1998-07-22 2011-11-09 住友電気工業株式会社 窒化アルミニウム焼結体及びその製造方法
JP4651148B2 (ja) * 2000-02-29 2011-03-16 京セラ株式会社 耐プラズマ部材及びプラズマ装置
JP4702978B2 (ja) * 2000-05-09 2011-06-15 株式会社東芝 窒化アルミニウム焼結体
KR20020004129A (ko) * 2000-07-03 2002-01-16 이종국 시알론 입계상을 갖는 강인화 탄화규소 제조법
JP2002319614A (ja) * 2001-02-13 2002-10-31 Nihon Ceratec Co Ltd 静電チャック
JP4245125B2 (ja) 2001-11-26 2009-03-25 日本碍子株式会社 窒化アルミニウム質セラミックス、半導体製造用部材、耐蝕性部材および導電性部材
JP4493264B2 (ja) * 2001-11-26 2010-06-30 日本碍子株式会社 窒化アルミニウム質セラミックス、半導体製造用部材および耐蝕性部材
JP4615873B2 (ja) * 2003-12-16 2011-01-19 株式会社トクヤマ 窒化アルミニウム焼結体及びその製造方法
JP4533994B2 (ja) * 2004-05-26 2010-09-01 独立行政法人産業技術総合研究所 プラズマ耐食材料、その製造方法及びその部材
US8563869B2 (en) * 2005-08-29 2013-10-22 Hitachi Metals, Ltd. Circuit board and semiconductor module using this, production method for circuit board
JP2007254190A (ja) * 2006-03-22 2007-10-04 Ngk Insulators Ltd 窒化アルミニウム焼結体、窒化アルミニウム焼結体の製造方法、及び部材
TWI449137B (zh) * 2006-03-23 2014-08-11 Ceramtec Ag 構件或電路用的攜帶體
CN102826853B (zh) * 2012-09-04 2014-12-17 福建华清电子材料科技有限公司 一种高强度氮化铝陶瓷基板及其制造方法
EP2894126B1 (de) * 2012-09-07 2018-08-01 Tokuyama Corporation Verfahren zur herstellung von wasserfestem aluminiumnitridpulver
CN103332935B (zh) * 2013-06-20 2014-12-10 绥中伊菲人工晶体科技有限公司 一种氮化铝复合陶瓷
CN103539457A (zh) * 2013-09-29 2014-01-29 合肥工业大学 一种微电子封装用AlN陶瓷基板的制备方法
KR101662803B1 (ko) * 2015-01-30 2016-10-12 (주)코시스산업 착탈 가능한 진공압 키트를 구비한 진공용기
CN107759224A (zh) * 2017-10-26 2018-03-06 广东工业大学 一种AlN复合陶瓷及其制备方法
KR102205085B1 (ko) * 2018-12-31 2021-01-19 한국세라믹기술원 고강도 질화알루미늄 소결용 조성물 및 고강도 질화알루미늄 소결체
KR102500847B1 (ko) * 2019-04-08 2023-02-15 주식회사 엘지화학 리튬 치환된 질화알루미늄 분말 및 이를 제조하기 위한 방법
KR102313589B1 (ko) 2019-11-21 2021-10-19 한국세라믹기술원 질화알루미늄 세라믹스 조성물의 제조방법
CN112250451B (zh) * 2020-09-23 2021-10-12 北京科技大学 一种高炉陶瓷杯用Al2OC-AlN固溶体结合刚玉耐火材料及制备方法
CN112374896B (zh) * 2020-11-12 2022-05-27 广东工业大学 一种高性能氮化铝陶瓷基板的浆料和制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5855377A (ja) * 1981-09-28 1983-04-01 株式会社東芝 窒化アルミニウム焼結体の製造方法
US4672046A (en) * 1984-10-15 1987-06-09 Tdk Corporation Sintered aluminum nitride body
JPS61286267A (ja) * 1985-06-13 1986-12-16 イビデン株式会社 窒化アルミニウム質焼結体の製造方法
US5314850A (en) * 1985-10-31 1994-05-24 Kyocera Corporation Aluminum nitride sintered body and production thereof
JPS62123072A (ja) * 1985-11-21 1987-06-04 京セラ株式会社 窒化アルミニウム質焼結体
JPS6329474A (ja) * 1986-07-23 1988-02-08 ロ−ム株式会社 半導体装置用サ−ジ吸収素子の製造方法
CA1318691C (en) * 1987-08-28 1993-06-01 Akira Yamakawa Sintered body of aluminum nitride and method for producing the same
JPH01242468A (ja) * 1988-03-23 1989-09-27 Japan Steel Works Ltd:The 窒化アルミニウム焼結体の製造方法
US5219803A (en) * 1988-05-16 1993-06-15 Sumitomo Electric Industries, Ltd. Sintered body of aluminum nitride
US5264388A (en) * 1988-05-16 1993-11-23 Sumitomo Electric Industries, Inc. Sintered body of aluminum nitride
US5273700A (en) * 1990-10-29 1993-12-28 Sumitomo Electric Industries Ltd. Aluminum nitride sintered body and process for producing the same
EP0593553B1 (de) * 1991-06-19 1996-09-18 Lanxide Technology Company, Lp Aluminiumnitrid feuerfestmaterialien und verfahren zur herstellung derselben
US5258337A (en) * 1992-06-18 1993-11-02 W. R. Grace & Co.-Conn. Reaction processing of AlN/B4 C composites
JP3742661B2 (ja) * 1993-05-21 2006-02-08 株式会社東芝 窒化アルミニウム焼結体およびその製造方法
EP0626359B1 (de) * 1993-05-21 2001-07-18 Kabushiki Kaisha Toshiba Sinterkörper aus Aluminiumnitriol und Verfahren zu seiner Herstellung
US5541145A (en) * 1993-12-22 1996-07-30 The Carborundum Company/Ibm Corporation Low temperature sintering route for aluminum nitride ceramics
US5424261A (en) * 1993-12-22 1995-06-13 The Carborundum Company Low temperature sintering route for aluminum nitride ceramics

Also Published As

Publication number Publication date
US5767028A (en) 1998-06-16
EP0780351A1 (de) 1997-06-25
DE69601256D1 (de) 1999-02-11
CN1079785C (zh) 2002-02-27
JP3100871B2 (ja) 2000-10-23
KR0168303B1 (ko) 1999-01-15
WO1997003031A1 (en) 1997-01-30
TW397807B (en) 2000-07-11
EP0780351B1 (de) 1998-12-30
CN1152298A (zh) 1997-06-18
JPH0925166A (ja) 1997-01-28
EP0780351A4 (de) 1997-07-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN

8320 Willingness to grant licences declared (paragraph 23)