DE69529017D1 - Spannungserhöhungsschaltung und ihre Verwendung in einer Festkörper-Bildaufnahmevorrichtung - Google Patents

Spannungserhöhungsschaltung und ihre Verwendung in einer Festkörper-Bildaufnahmevorrichtung

Info

Publication number
DE69529017D1
DE69529017D1 DE69529017T DE69529017T DE69529017D1 DE 69529017 D1 DE69529017 D1 DE 69529017D1 DE 69529017 T DE69529017 T DE 69529017T DE 69529017 T DE69529017 T DE 69529017T DE 69529017 D1 DE69529017 D1 DE 69529017D1
Authority
DE
Germany
Prior art keywords
solid
imaging device
state imaging
booster circuit
booster
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69529017T
Other languages
English (en)
Other versions
DE69529017T2 (de
Inventor
Yasuhito Maki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69529017D1 publication Critical patent/DE69529017D1/de
Publication of DE69529017T2 publication Critical patent/DE69529017T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Dc-Dc Converters (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69529017T 1994-05-27 1995-05-26 Spannungserhöhungsschaltung und ihre Verwendung in einer Festkörper-Bildaufnahmevorrichtung Expired - Fee Related DE69529017T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6138150A JPH07322606A (ja) 1994-05-27 1994-05-27 昇圧回路及びこれを用いた固体撮像装置

Publications (2)

Publication Number Publication Date
DE69529017D1 true DE69529017D1 (de) 2003-01-16
DE69529017T2 DE69529017T2 (de) 2003-10-09

Family

ID=15215189

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69529017T Expired - Fee Related DE69529017T2 (de) 1994-05-27 1995-05-26 Spannungserhöhungsschaltung und ihre Verwendung in einer Festkörper-Bildaufnahmevorrichtung

Country Status (6)

Country Link
US (1) US5777317A (de)
EP (1) EP0684686B1 (de)
JP (1) JPH07322606A (de)
KR (1) KR100527606B1 (de)
DE (1) DE69529017T2 (de)
MY (1) MY113172A (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3346273B2 (ja) * 1998-04-24 2002-11-18 日本電気株式会社 ブースト回路および半導体記憶装置
TW503620B (en) * 2000-02-04 2002-09-21 Sanyo Electric Co Drive apparatus for CCD image sensor
EP1158654B1 (de) * 2000-02-15 2006-05-03 STMicroelectronics S.r.l. Ladungspumpenschaltung und Spannungserhöhungsanordnung mit Übertragung und Gewinnung der Ladung
DE10051936B4 (de) 2000-10-19 2004-10-14 Infineon Technologies Ag Spannungspumpe mit Einschaltsteuerung
TW529178B (en) * 2001-02-06 2003-04-21 Sanyo Electric Co Charge pump device
JP5203562B2 (ja) * 2004-11-08 2013-06-05 三星電子株式会社 Ｃｍｏｓイメージセンサー及びその駆動方法
JP2006158157A (ja) * 2004-12-01 2006-06-15 Toshiba Matsushita Display Technology Co Ltd Ｄｃ−ｄｃ変換回路
JP2007060872A (ja) * 2005-08-26 2007-03-08 Rohm Co Ltd 昇圧回路とそれを用いた電気機器
US7884665B2 (en) 2005-12-08 2011-02-08 Rohm Co., Ltd. Charge pump circuit, LCD driver IC, and electronic appliance
JP4837519B2 (ja) * 2006-10-16 2011-12-14 株式会社 日立ディスプレイズ 表示装置の駆動回路
US8030988B2 (en) * 2009-12-31 2011-10-04 Stmicroelectronics Asia Pacific Pte. Ltd. Method for generating multiple incremental output voltages using a single charge pump chain

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH614837B (fr) * 1977-07-08 Ebauches Sa Dispositif pour regler, a une valeur determinee, la tension de seuil de transistors igfet d'un circuit integre par polarisation du substrat d'integration.
JPS62150597A (ja) * 1985-12-25 1987-07-04 Nissan Motor Co Ltd 昇圧回路
JPS62233064A (ja) * 1986-04-02 1987-10-13 Nec Corp Ｃｍｏｓ電圧変換回路
NL8701278A (nl) * 1987-05-29 1988-12-16 Philips Nv Geintegreerde cmos-schakeling met een substraatvoorspanningsgenerator.
JP2805210B2 (ja) * 1989-06-09 1998-09-30 日本テキサス・インスツルメンツ株式会社 昇圧回路
JPH07123163B2 (ja) * 1989-07-21 1995-12-25 日本電気株式会社 電荷転送装置
US5059815A (en) * 1990-04-05 1991-10-22 Advanced Micro Devices, Inc. High voltage charge pumps with series capacitors
KR920006991A (ko) * 1990-09-25 1992-04-28 김광호 반도체메모리 장치의 고전압발생회로
US5081371A (en) * 1990-11-07 1992-01-14 U.S. Philips Corp. Integrated charge pump circuit with back bias voltage reduction
JP2575964B2 (ja) * 1991-03-27 1997-01-29 株式会社東芝 固体撮像装置
EP0620719A1 (de) * 1992-01-11 1994-10-26 TOLEMAN, Paul Tonometer

Also Published As

Publication number Publication date
EP0684686A2 (de) 1995-11-29
MY113172A (en) 2001-12-31
US5777317A (en) 1998-07-07
JPH07322606A (ja) 1995-12-08
KR950034810A (ko) 1995-12-28
KR100527606B1 (ko) 2006-06-07
EP0684686A3 (de) 1997-09-24
DE69529017T2 (de) 2003-10-09
EP0684686B1 (de) 2002-12-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee